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What are compound semiconductors?
Compound or III-V semiconductors are materials that contain both Group III and Group V elements from the Periodic Table. Characteristics of III-V semiconductors such as their high electrical mobility, their ability to produce light efficiently, and their ability to function at high speed in microwave equipment or in fast computers, make them particularly suited to the fabrication of opto-electronic devices. Common III-V semiconductors used at Tyndall include gallium arsenide, gallium nitride, and indium phosphide.
What role does CFF Compound Semiconductor fabrication play at Tyndall?
We provide fabrication support in the compound semiconductor area to Tyndall research groups by working with and developing new processes of practical importance for research. We also provide fabrication support to Industry Access and directly to commercial clients.
Case Studies: Imaging for Space and Security Applications using TeraHertz Technology
High frequency Schottky diodes are employed as mixers and multipliers in receivers for space and security applications, such as remote sensing and imaging from space. Higher resolution is needed for effective imaging and this can be achieved by operating in the terahertz (THz) region. John Pike in the Compound Semiconductor Fabrication Laboratory is integrating novel planar Schottky diodes with circuits using thin gallium arsenide (GaAs) membrane substrates. This technology minimises losses in the substrate, and parasitics in the planar diode, enabling higher operating frequencies. The work has been funded by the European Space Agency to establish a European source for THz Schottky diodes.
Case Studies: Nanostructure Fabrication by Polymer Self-assembly
The Compound Semiconductor Fabrication Laboratory has been working with the Science Foundation Ireland funded Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) to develop techniques to produce nanostructures with dimensions less than 30 nm based on self-assembling polymers. CRANN processed polymer films of polystyrene (PS) and poly(methyl methacrylate (PMMA) on silicon substrates, which self-assembled to form nanoscale, cylindrical features. Tyndall then developed a dry etch process which selectively removes the PMMA to produce a polystyrene structure that can be used as a mask for the fabrication of devices with nanoscale features.
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