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IC Re-Engineering (FIB), IC Failure Analysis and Process Measurements
Designs are modified, processing problems are diagnosed and process evaluation test structures characterised using our FIB, SEM, EDX, TEM, Parametric Test Systems, SRP doping profile analysis systems, as well as crystal defect etching and CV measurement. We are highly skilled at IC modifications using FIB and we can also generate very high quality cross-sections using FIB and TEM preparations. Additionally we perform classical IC failure analysis which involves identifying the root cause of failure and specifying appropriate corrective action.
Main evaluation techniques used: |
- Focused Ion Beam analysis (FIB)
- Doping Profile Measurements
- Chemical Mechanical Polishing
- Scanning Electron Microscope (SEM)
- Transmission Electron Microscopy (TEM) (Ext.)
- Energy dispersive x-ray analysis (EDX)
- Parametric Test Systems (PTS)
- Optical Microscopy
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- IC cross sectioning and layer delineation
- SIMS (Ext.)
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Emission Microscopy (EM)
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Electrical Testing
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Analytical Probing
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Device Isolation and Characterisation
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Package Decapsulation/ Package X-Ray
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Logitech Chemical Mechanical Polishing system (CMP).
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