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Developments in the field of information and communication technologies are driven to a large extent by continuing innovations and scaling of silicon-based complementary metaloxide-semiconductor field effect-transistor (CMOS) technologies. The ability to scale the minimum dimensions of MOS based field effect transistors (MOSFETs), without changing the basic materials (Si and SiO2) and the essential device structure has been the main driving force behind the dramatic progress in the performance of integrated circuits.
As minimum dimensions of devices are reducing to 45nm and below, however, the use of classical device architecture ad classical materials is no longer possible. Furthermore, the use of silicon-based devices is expanding from digital circuits to systems that comprise logic gates, analogue functions, sensor, actuators and micromechanical components.
The activities of the Silicon Research Group focus on:
- Silicon Device Architecture: This team develops novel silicon devices, measurement methods and models for a range of applications including memory, power and biosensing. The group also acts as consultants for semiconductor companies in developing new devices for specific applications.
- High-k Materials for Future CMOS [k-MOS]: The research activity is the formation and characterisation of high-k films for future CMOS applications, including the study of origin and passivation of bulk and interface defects in high-k MIS structures, high-k material deposition (HfO2, La2O3), optical and microstructural characterisation of high-k thin films, and high-k dielectrics deposition on III-V semiconductors.
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- Micro ElectroMechanical Systems: This group develops and tests MEMS such as microchannel cooling devices, integrated microsensors for environmental monitoring, a microspectrometer based on Geiger mode photodiodes and RF MEMS capacitive switches.
- RADFET R&D: This group takes care of research, development, and sales of radiation sensing devices and systems. RADFETs are commercial devices that have found application in space, nuclear facilities, and radiotherapy and Tyndall is a world-leading provider in all these areas. We have also developed a stacked RADFET concept that has a potential to substantially increase the sensitivity of the RADFET and bring it to the range needed for personal dosimetry and radiation cancer treatment.
- Ultimate Silicon Devices:
The research in this group focuses on the modeling, fabrication and characterization of nanowire multiple-gate MOS transistors. The multiple-gate structure allows for the shrinking of MOS transistors in the sub-decananometer regime.
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