Simulation of atomic layer deposition
|
|
|
|
|
Atomic layer deposition (ALD) of high-k dielectrics for capacitors and transistors:
- Mechanism of alumina ALD
- Atomic layer deposition of rare earth oxides
- Hafnia and zirconia precursors
- 'Clean-up' of III-V native oxides during ALD
- Multi-scale simulation of HfO2 film growth
Atomic layer deposition of metals:
- Noble metal ALD
- Precursor modelling for ALD of copper
- Reduction of copper oxide surface to copper metal
Contact:
Simon Elliott
Print
Send to friend