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Schottky Barrier Diode Chips

    High performance chips now available commercially from NMRC.

  • Varistor and varactor diode chips
  • Front and side ohmic contacts
  • Cylindrical and cubic chips
  • Sub-femtofarad capacitances
  • Comprehensive range available ex-stock
  • Specials available on request
Schottky Diodes

NMRC has produced high quality Schottky chips for over 20 years. We are now making this capability commercially available.

For technical information, contact:

    Product Sales
    Tel: +353 21 4904372, Fax: +353 21 4270271, Email: admin




Standard Whisker-Contacted Schottky-Diodes

NMRC offers a range of millimeter and sub-millimeter wave Schottky Barrier Diode chips for Multiplier and Mixer applications to meet customer specifications. More complex Schottky structures including discrete microwave transistors and small scale integrated circuits are also available to special order.

Manufactured on in-house MOVPE crystal growth technology and fabrication, the diodes have been supplied to many customers including the European Space Agency for over twenty years.

Varistor and Varactor diodes are supplied with anodes as small as 0.5µm in standard 100µm×100µm square shapes with thickness of 80µm to 100µm. Au/SnNi/Au ohmic contacts are metallised on the back of the diodes. Side ohmic contacts (notch front diodes) are also available. The standard anode metallisation is electroplated Pt/Au which gives the best combination of ideality, cryogenic compatibility and low noise performance.

NMRC is currently developing "beam lead" or "planar" Schottky barrier diodes where the whisker contact is made redundant with an easier to use assembly bonding process.

Varactor Diodes
  • Capacitances from 2fF upwards.
  • RC-product dependant on breakdown voltage specification.
    Typical values:
      VBB=15V, C0=20fF, Rs=10 Ohm
      VBB= 5V, C0=5fF, Rs=6 Ohm
  • Available chip configurations: A, B and C
  • Varactor batches are tested for I-V and C-V characteristics.

Mixer Diodes
  • Capacitances from 1fF upwards.
  • Devices with 0.5fF capacitance to special order.
  • RC-product dependant on epilayer-doping specification.
    Typical values: ND=4.1017 cm-3, C0=1.1fF, Rs=18 Ohm
  • Available chip configurations: A, B and C
  • Mixer-diode batches are tested for C0 value, and I-V characteristics.
  • They can be tested additionally for IF noise as a function of DC - bias current. (77K and 300K ambient, 4GHz).




Micrograph Examples of Schottky Diode Barrier Chips


Array of 30µm diameter cylindrical Schottky Chips

Type A chip in corner cube mixer


Detail of 30µm cylindrical chip, showing array of 1µm junctions.


Detail of Planar Millimeter-Wave Schottky, showing air-bridged junction

Surface detail of honeycomb array of 2µm Schottky junctions.




Chip Configurations

A: H = 100µm
W,L > 100µm
Back Ohmic Contact

B: H = L = W = 100µm
Side Ohmic Contact

C: H = 30µm
D = 30 or 90µm
Side Ohmic Contact
(solderable back)




List of Currently Available Diodes

NMRC Ireland
ID Type C0 (fF) Rs (Ohm) VBB (V) eta Chip Config Size L×W×H (µm) Comments
X55 Varactor 20 10151.11 A 250×250×90 Good results in 105GHz tripler
X56 Varactor 11 15151.10 A 250×250×100 Same batch as of X55
X68 Varactor 19 13131.16 B 100×100×100 Good results in 230GHz multiplier
X78 Varactor 18 13161.09 A Various Same batch as of X79
X79 Varactor 20 12161.09 A 125×125×105 Good results in 230GHz Multiplier
X83 Varactor 18 10161.08 A Various Same batch as of X79
X89 Varactor 5 1191.13 A 125×125×100 Used successfully in 700 GHz tripler
X81 Mixer 2.8 1071.14 A 125×125×110 Used successfully at room temperature
X82 Mixer 3.3 1271.13 A 125×125×110 Mixer same batch as of X81
X98 Varactor 5 781.26 A Various 700GHz varactor diode
X99 Mixer 1.1 1461.26 A 125×125×100 Promising diode - No RF results available
X104 Varactor/ Mixer 6 551.20 C D=30, H=30 v. small physical size
X105 Mixer 9 641.26 C D=30, H=30 v. small physical size
X109 Varactor 5 671.29 C D=90, H=20 Cylindrical shape
Good result in 700 GHz tripler
X110 Mixer 1.0 274.41.38 A 100×100×100 THz mixer diode
Good noise performance
X111 Mixer 0.6 163.51.59 A 100×100×100 THz mixer diode
Good noise performance
X112 Mixer 0.6 192.41.98 C D=30, H=30 THz mixer diode
Very small physical size
Side ohmic contact





Information and Ordering Details

We would be glad to quote to supply your diode requirements and / or to discuss collaborative research with you.

For further information, please contact:
Gabriel Crean
Tel:+353-21-4904094, Fax:+353-21-4270271, e-mail:
Gabriel Crean

 

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