Contents


Introduction

III-V semiconductors are materials such as GaAs, that contain both Group III and Group V elements from the Periodic Table. These III-V semiconductors are particularly suited to the fabrication of opto-electronic devices. The Group has its own facilities for epitaxial growth and device fabrication. Most of these are in Clean Room environments.




Activities

Cylindrical Schottky diode chips manufactured at NMRC
  • Cylinders: 30 µm diameter
  • Diodes: 1 µm diameter



Services and Products




Facilities

Epitaxial Growth

  • Two MOVPE reactors capable of growing GaAs, InP, InGaAs, AlGaAs, InGaAsP and similar materials (Thomas Swan and Cambridge Instruments). Layers are of world-class quality.

Characterisation of Epitaxial Layers

  • Double crystal X-ray diffractometer (Bede model 150). Wafer mapping facility for lattice mismatch.
  • Fourier Transform Photoluminescence to measure bandgap (Bio-Rad). Wafer mapping of peak-wavelength.
  • Hall-mobility measurements (Keithley).
  • Carrier concentration profiler (Bio-Rad).

Lithography

  • Two mask aligners, one for UV, the other for DUV exposures (Karl Suss).
  • Electron beam lithography system (Leica Cambridge). Capable of writing features down to 0.1 micron linewidth.

Deposition

  • Electron beam evaporator for metaldeposition (Airco Temescal BJD - 1800). 6 pockets. Cryo - pumped.
  • PECVD - system for the deposition of silicon nitride and silicon dioxide (IPL) .
  • Sputter deposition system for dielectrics, and laser facet-coatings (NMRC).

Plasma Etching

  • RIE for AlGaAs etching (Plasma Therm).
  • RIE for III-V materials and dielectrics (Oxford Instruments).

Various

  • Wafer thinning, electroplating, quartz furnace, surface-profiling (Tencor), scribing and dicing, electrical and optical testing, plus access to NMRC facilities (SEM, SIMS, etc.).



 

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