The group has considerable experience in the deposition of III-V materials such as GaAs and InP and metal oxides/nitrides, including SiO^₂, TiO^₂, TiO 2-xNx, VO^₂, WO^₃ and MoO^₃. Applications of these materials are wide ranging, extending from semiconductor device fabrication to smart windows and solar cells.

As part of the approach taken, in-situ monitoring features heavily. FTIR spectroscopy, optical interferometry, reflectance anisotropy spectroscopy, and diode laser spectroscopy are all examples of in-situ monitoring methods that have been successfully applied to the study of CVD processes.

At the Tyndall National Institute, we are currently building a state-of-the-art ALD system for the study of thin oxide and nitride layers, produced by surface chemical reaction at selected sites. This system will be equipped with a range of in-situ monitoring equipment including mass spectrometry, FTIR spectroscopy and diode laser spectroscopy. The proposed experiments, which aim to try to measure real reacting species during growth, are aimed at understanding the mechanisms of growth in more detail, so as to then be able to tailor materials properties, e.g. dielectric constant, more effectively. The work also aims to learn how to control growth at the molecular level, such that patterned substrates and novel surface chemistry may be used to grow well-defined target structures such a nanowires and tubes.

As part of the array of CVD systems available, in addition to the ALD system, a simple liquid injection CVD system and a new system designed for low T nitride growth are currently on order. The liquid injection system can accommodate those layer precursors that are not sufficiently volatile to be used under normal CVD growth conditions. In the past it has been used to grow novel mixed metal oxide thin films such as BaSrTiO^₃. The new nitride reactor aims to exploit surface catalysed CVD to grow GaN and related materials at selected points on a substrate surface.