Condensed Matter Theory

Publications

Journal Publications

Non-equilibrium phonon dynamics studied by grazing-incidence femtosecond X-ray crystallography
S. L. Johnson, P. Beaud, E. Vorobeva, C. J. Milne, E. D. Murray, S. Fahy and G. Ingold, ACTA CRYSTALLOGRAPHICA SECTION A, 66, 157-167, (2010)

Comment on ''Directly Observing Squeezed Phonon States with Femtosecond X-Ray Diffraction'' Reply
S. L. Johnson, P. Beaud, E. Vorobeva, C. J. Milne, E. D. Murray, S. Fahy and G. Ingold, Phys. Rev. Lett., 104, 029602, (2010)

Optical transitions in dilute GaN_xAs_1-x nitrides: A comparison between ab initio and empirical pseudopotentials
G. Stenuit and S. Fahy, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 70, 769-777, (2009)

Observation of Insulating Nanoislands in Ferromagnetic GaMnAs
D. M. Wang, Y. H. Ren, P. W. Jacobs, S. Fahy, X. Liu, J. K. Furdyna, V. F. Sapega and R. Merlin, Phys. Rev. Lett., 102, 256401, (2009)

Directly Observing Squeezed Phonon States with Femtosecond X-Ray Diffraction
S. L. Johnson, P. Beaud, E. Vorobeva, C. J. Milne, E. D. Murray, S. Fahy and G. Ingold, Phys. Rev. Lett., 102, 175503, (2009)

Vibrational mode shifts as a measure of local strain in the dilute nitride semiconductor alloy GaN_xAs_1-x
J. Buckeridge, A. M. Teweldeberhan and S. Fahy, Phys. Rev. B 79, 153201 (2009)

First-principles calculation of carrier-phonon scattering in n-type Si_1-xGe_x alloys
F. Murphy-Armando and S. Fahy, Phys. Rev. B 78, 035202 (2008)

Effect of nitrogen interactions on photoluminescence linewidth broadening in dilute nitride semiconductors
I. Bosa, D. McPeake and S. Fahy, Phys. Rev. B, 78, 245206, (2008)

Resonant Raman-active localized vibrational modes in Al_yGa_1-yN_xAs_1-x alloys: Experiment and first-principles calculations
A. M. Teweldeberhan, G. Stenuit, S. Fahy, et al, Phys. Rev. B, 77, 155208, (2008)

Phonon spectra of the high-frequency modes in dilute nitride random GaN_xAs_1-x alloy
A. M. Teweldeberhan and S. Fahy, Phys. Rev. B, 77, 235216, (2008)

Resonant Raman study of local vibration modes in AlGaAsN layers
E. Gallardo, S. Lazic, J. M. Calleja, J. Miguel-Sanchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzman, E. Munoz, A. M. Teweldeberhan and S. Fahy, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40, 2084-2086, (2008)

Phonon dispersion relations and softening in photoexcited bismuth from first principles
E. D. Murray, S. Fahy, D. Prendergast, T. Ogitsu, D. M. Fritz and D. A. Reis, Phys. Rev. B, 75, 184301, (2007)

Ultrafast bond softening in bismuth: Mapping a solid's interatomic potential with X-rays
D. M. Fritz, D. A. Reis, B. Adams, R. A. Akre, J. Arthur, C. Blome, P. H. Bucksbaum, A. L. Cavalieri, S. Engemann, S. Fahy, et al, SCIENCE, 315, 633-636, (2007)

First-principles calculation of p-type alloy scattering in Si_1-xGe_x
S. Joyce, F. Murphy-Armando, and S. Fahy, Phys. Rev. B 75, 155201 (2007)

First-principles calculations of the mechanical and structural properties of GaN_xAs_1-x: Lattice and elastic constants
G. Stenuit and S. Fahy, Phys. Rev. B 76, 035201 (2007)

First-principles calculation of alloy scattering in Ge_xSi_1-x
F. Murphy-Armando and S. Fahy, Phys. Rev. Lett. 97, 096606 (2006)

Simulations of time-resolved x-ray diffraction in Laue geometry
B. Lings, J. S. Wark, M. F. DeCamp, D. A. Reis and S. Fahy, JOURNAL OF PHYSICS-CONDENSED MATTER, 18, 9231-9244, (2006)

Novel Structural Features of CDK Inhibition Revealed by an ab Initio Computational Method Combined with Dynamic Simulations
Lucy Heady, Marivi Fernandez-Serra, Ricardo L. Mancera, Sian Joyce, Ashok R. Venkitaraman, Emilio Artacho, Chris-Kriton Skylaris, Lucio Colombi Ciacchi, and Mike C. Payne, J. Med. Chem., ASAP Article 10.1021/jm060190+ S0022-2623(06)00190-7

Assigning carbon-13 NMR spectra to crystal structures by the INADEQUATE pulse sequence and first principles computation: a case study of two forms of testosterone
Robin K. Harris, Sian A. Joyce, Chris J. Pickard, Sylvian Cadars and Lyndon Emsley, Phys. Chem. Chem. Phys. 8, 137 - 143 (2006)

Alloy scattering of n-type carriers in GaN_xAs_1-x
S. Fahy, A. Lindsay, H. Ouerdane, and E. P. O'Reilly, Phys. Rev. B 74, 035203 (2006)

Effect of indium-nitrogen bonding on the localized vibrational mode in In_yGa_1-yN_xAs_1-x
A. M. Teweldeberhan  and  S. Fahy, Phys. Rev. B 73, 245215 (2006)

Theory Of Electron Effective Mass And Mobility in Dilute Nitride Alloys
A. Lindsay, S. Fahy and E.P. O’Reilly, Physics of Semiconductors: 27^th Int. Conf. on the Physics of Semiconductors, ed. J. Menédez and C.G. Van de Walle,  AIP Conference Proceedings Vol. 772, p.277-278 (2005)

Effect of lattice anharmonicity on high-amplitude phonon dynamics in photoexcited bismuth
É. D. Murray, D. M. Fritz, J. K. Wahlstrand, S. Fahy, and D. A. Reis, Phys. Rev. B 72, 060301 (2005)

Calculated pressure dependence of the localized vibrational mode of nitrogen in GaN_xAs_1-x
A. M. Teweldeberhan  and  S. Fahy, Phys. Rev. B 72, 195203 (2005)

Theory of electron mobility in dilute nitride semiconductors
S. Fahy and E.P. O’Reilly, Physica E 21, 881-885 (2004)

Detection of Rabi oscillations in a two-dimensional electron gas under ultrafast intersubband excitation
D. McPeake, F.T. Vasko and E.P. O’Reilly, Semicond. Sci. Technol., 19, S279-S281, (2004)

Coherent Phonons: electronic softening or anharmonicity?
S. Fahy and D. A. Reis, Phys. Rev. Lett., 93, 109701, (2004)

Intrinsic limits on electron mobility in disordered dilute niride semiconductor alloys
S. Fahy, A. Lindsay and E. P. O'Reilly, IEE Proceedings: Optoelectronics, 151, 352 (2004) 

Supersonic strain front driven by a dense electron-hole plasma
M. F. deCamp, D. A. Reis, A. Cavalieri, P. H. Bucksbaum, R. Clarke, R. Merlin, E. M. Dufresne, D. A. Arms. A. Lindenberg, A. MacPhee, Z. Chang, B. Lings, J. S. Wark, and S. Fahy, Phys. Rev. Lett., 91, 165502 (2003)

Intrinsic Limits on Electron Mobility in Dilute Nitride Semiconductors
S. Fahy and E. P. O'Reilly, Applied Physics Letters 83, 3731-3733 (2003)

G. Stenuit , S. Michotte, J. Govaerts and L. Piraux, "Vortex matter and temperature dependence of the Ginzburg-Landau phenomenological lengths in lead nanowires", to be published in the NATO Science Series (Proceedings of the NATO Advanced Research Workshop " Electron Correlations in New Materials and Nanosystems", Yalta (Ukraine), September 19-23, 2005).

S. Fahy, "Energy minimization methods for Jastrow-Slater wavefunctions", Workshop on "Electronic Structure beyond Density Functional Theory", July 2004 at Lorentz Center, Leiden, Holland.

E.P. O’Reilly, A. Lindsay and S. Fahy, “The electronic structure of dilute nitride alloys: how robust is the band anti-crossing model?”, The 20th General Conference of the Condensed Matter Division, European Physical Society, Prague, July 19-23, 2004

First principles calculations of the scattering cross section of substitutional carbon in silicon
M P Vaughan and S Fahy, J. Phys.: Conf. Ser., 242, 012003, (2010)

E. Murray, "Calculation of the Phonon Lifetime of Photoexcited Bismuth", APS March Meeting, Monday-Friday, March 13-17, 2006; Baltimore, MD.

G. Stenuit, "Electronic transport in dilute GaAs:N", APS March Meeting, March 13-17, 2006; Baltimore, MD.

F. Murphy Armando, "First-principles calculation of phonon scattering of n-type carriers in SiGe alloys", APS March Meeting, March 13-17, 2006; Baltimore, MD.

S. Joyce,"Mobility in SiGe alloys from first principles", APS March Meeting, March 13-17, 2006; Baltimore, MD.

I. Bosa, D. Mc Peake, S. Fahy, "Low temperature photoluminescence in the strongly disordered dilute nitride GaAsN", APS March Meeting, March 13-17, 2006; Baltimore, MD.

A. M. Teweldeberhan, "Effect of indium on the localized vibrational mode of nitrogen in GaN_xAs_1-x. ", APS March Meeting, March 13-17, 2006; Baltimore, MD.

D. Mc Peake, I. Bosa, A. Lindsay, S. Fahy, E. P. O'Reilly,  "Localization and exciton line-width broadening in the dilute nitride, GaNAs",  APS March meeting 05, Los Angeles, USA.

F.Murphy-Amando, S.Fahy,  "First-principles calculation of alloy scattering of n-type carriers in SiGe", APS March meeting 05, Los Angeles, USA.

D. Mc Peake, I. Bosa, A. Lindsay, S. Fahy, E. P. O'Reilly,  "Theory of exciton linewidth broadening and reduced mobility in GaNAs alloys", MSS12 Albuquerque NM, 2005.

S. Fahy, E. P. O'Reilly and A. Lindsay, "Temperature dependence of electron mobility in dilute nitride semiconductors", American Physical Society, March Meeting 2004, Montreal.

E. Murray, S. Fahy and D. A. Reis, "Calculation of coherent phonon frequency and amplitude in photo-excited bismuth" (poster presentation) Ultra-fast X-ray Conference, April 2004, San Diego.

S. Fahy, A. Lindsay and E. P. O'Reilly, "Intrinsic limits on electron mobility in disordered dilute nitride semiconductor alloys",   European Materials Research Society (E-MRS), Spring Meeting 2004, Strasbourg, May 2004.

E. Murray and S. Fahy, "Calculation of coherent phonon frequency and amplitude in photo-excited bismuth", Flagstaff, Arizona, July 26-30, 2004.

S. Fahy, E. P. O'Reilly and A. Lindsay, "Temperature dependence of electron mobility in dilute nitride semiconductors", International Conference on the Physics of Semiconductors. July 2004. Flagstaff, USA.

S. Fahy and E.P. O’Reilly, "Intrinsic limits on electron mobility in dilute nitride semiconductors", IoP Condensed Matter and Material Physics (CMMP) Conference, 6-9 April 2003, Belfast, UK.

E.P. O’Reilly, S. Fahy, A. Lindsay and S. Tomić, "Theory of electronic structure and gain properties of GaInNAs", International Workshop on GaAs-based lasers for 1.3 – 1.5 m m wavelength range, 24-26 April 2003, Wroclaw University of Technology, Poland.

S. Fahy and E.P. O’Reilly, "Theory of Electron Mobility in Dilute Nitride Semiconductors". The 11th International Conference on Modulated Semiconductor Structures (MSS11), 14-18 July 2003, Nara, Japan.