|
The Epitaxy and Physics of Nanostructures
laboratory investigates the epitaxial growth mechanism and the physics of a
variety of semiconductor structures. In particular, we undertake fundamental studies
of the growth mechanism and the optical properties of site controlled quantum
dots (QDs) obtained by growing in pre-patterned GaAs substrates. Our field of
interest spans as far as optoelectronic and electronic devices, with special
attention to light emitting sources at telecom wavelengths.
The group at the moment comprises three PhD
students and a postdoctoral fellow
The group is well equipped to tackle its mission.
 The MOVPE system: Aixtron 200, double reactor: 1x2” and 3x2”.
Carrier gas: Nitrogen.
Sources:
Group III precursors: TMGa, TEGa,
TMAl, TMIn;
Group V precursors AsH3,
PH3, TMSb, U-DMHy
Dopant sources: Si2H6,
CBr4, DEZn
The cryogenic microPl laboratory
Characteristic features: an ARS
low vibration,
low temperature (~7K) closed
cycle cryostat
Two Jobin Yvon 1 metre
spectrometers,
one nitrogen cooled CCD and one InGaAs array .
Photon correlation set-up under
construction,
Timeresolved measurements
capability in the visible and near infrared.
Supercontinuum laser for pulsed
excitation
|
