This state-of-the-art 50 kV production tool has a nominal resolution of 20 nm and can pattern full wafers up to 8" diameter.

The FIB system employs a finely focused beam of energetic (30 keV) gallium ions which can be focused to spot diameters ~ 10 nm. Rastering the beam across the substrate allows local milling or patterning with a resolution better than 50 nm and imaging (through detection of secondary electrons) with resolution on the order of 20 nm. A range of gases can be injected close to the substrate to allow patterned deposition of Pt-based metal or insulator structures and enhanced etching of metals or insulators for nanoscale structure fabrication and editing.

This computer-controlled system enables highly precise moulding of structures in thermoplastic materials, especially microstructures with a large aspect ratio, on substrates up to 100 mm diameter (4" wafer). Its aligned embossing ( ± 3 µm accuracy) and pressurised de-embossing capabilities makes it suitable for a wide range of applications, e.g., microfluidics, micro-optics and nano-imprint lithography.