Metal ALD

Deposition of interconnect metals in downscaled devices is challenging requiring new knowledge in deposition chemistry and behaviour of metals at nm-length scale. We use first principles DFT simulations to (a): devise new plasma atomic level deposition (ALD) processes for metals and (b): discover novel materials to promote metal ALD.

Technological challenges for metal ALD:

• Decreased volume available in devices for metal deposition
• Finding new processes for controlled metal deposition on complex 3D structures

Our simulations are used to extract atomic level understanding of process chemistry, predict new processes and find new materials that will promote conformal and uniform interconnect metal deposition.