Deposition of interconnect metals in downscaled devices is challenging requiring new knowledge in deposition chemistry and behaviour of metals at nm-length scale. We use first principles DFT simulations to (a): devise new plasma atomic level deposition (ALD) processes for metals and (b): discover novel materials to promote metal ALD.
Technological challenges for metal ALD:
Our simulations are used to extract atomic level understanding of process chemistry, predict new processes and find new materials that will promote conformal and uniform interconnect metal deposition.