The photonic epitaxy research programme within Tyndall concentrates on developing and understanding photonic material growth processes and related device fabrication. Specifically, the core activities focus on epitaxy of photonic materials by metalorganic vapour phase epitaxy (often known as MOVPE or MOCVD). The underlying research focuses on the III-V (e.g. GaAs, InP) and III-N (e.g. GaN, INGaN) families. Our programme is organised around frontier research in materials development by metalorganic vapour phase epitaxy associated to proof-of-concept device demonstrations.
Our vision is to enable deep-tech innovation for next-generation and emerging photonic technologies in the field of telecommunication, information processing, quantum technologies and sensing.
Our mission is to deliver state-of-the-art solutions to obtain:
- More efficient light sources from deep UV to near infrared (especially telecom)
- Enhanced photonic on–chip capabilities for signal processing, computation and sensing
- More efficient devices for energy (e.g. specialised solar cells, engineered energy distribution devices for harsh environments, more efficient rectification devices etc.)
- Materials for Quantum Technologies, including zero dimensional structures
- Novel material designs for next generation communication and power applications.
Research Challenge
Developing novel photonic materials and architectures (e.g. material combinations and organization, influence of substrate orientation) is key to developing next generation photonic devices. Technological challenges encompass on the one hand, developing devices with enhanced compatibility for the emerging field of large scale photonic integration, and on the other, broadening the spectral range of applications through developing novel material combinations, allowing efficient deep UV sources, or addressing the >2 micron window for future fiber telecommunication expansions.
Recent Publications
P. Pampili, V.Z. Zubialevich, P. Maaskant, M. Akhter, B. Corbett, PJ,. Parbrook, “InAlN-based LEDs emitting in the near-UV region”, Japanese Journal of Applied Physics 58 (SC), SCCB33, (2019).
M. O’Donovan, P. Farrell, J. Moatti, T. Streckenbach, T. Koprucki and S. Schulz, “Impact of random alloy fluctuations on the carrier distribution in multicolor (In, Ga) N/Ga N quantum well systems”, Physical Review Applied 21, no. 2: 024052, (2024).
E.E Mura, A.M Gocalinska, M. O’Brien, R. Loi, G. Juska, S.T Moroni, J. O’Callaghan, J. Arredondo, B. Corbette and E. Pelucchi, “Importance of overcoming MOVPE surface evolution instabilities for> 1.3 μm metamorphic lasers on GaAs“, Crystal Growth & Design, 21(4), 2068-2075, (2021).
