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Biography
Peter Parbrook was awarded a first class honours degree in Physics from the University of Strathclyde, Scotland in 1987. His Ph.D., also from the University of Strathclyde, was on the study of the growth and characterisation of wide-bandgap II-VI semiconductors. The majority of this work was carried out on secondment to the Royal Signals and Radar Establishment, Malvern, England. In 1991 on completion of his Ph.D. studies he took a Toshiba Fellowship to continue his research in II-VI materials, working at the Toshiba Central Research and Development Center in Japan, continuing as a contract researcher there on completion of the fellowship period.
In 1995 he was appointed to a lectureship in the Department of Electronic and Electrical and Engineering at the University of Sheffield, being promoted to Reader in 2002. During this time he installed and developed a research activity in III-N semiconductors using metalorganic vapour phase epitaxy, with particular interest in the use of these materials for short wavelength light emitting devices.
In 2009 he took up an appointment jointly between the School of Engineering and the Tyndall National Institute as a Stokes Professor, continuing his research into the preparation of III-N materials and devices, where his research focuses on the growth of devices using novel alloys or crystal orientations / nanostructures. In 2016 he was appointed Head of the Electrical and Electronic Engineering Discipline within the School of Engineering.
Prof. Parbrook is the author / co-author of around 250 publications in international journals and of around 10 patents. He is a member of the International Advisory Committee for the International Workshop on Nitride Semiconductors conference series. In 2011 he was co-chair of the International Conference on Nitride Semiconductors (ICNS) held in Glasgow, Scotland.
Research Interests
Research Interests
My research expertise is into the development of group III nitride semiconductors for optoelectronic applications. I am particularly interested in the growth of GaN and related compounds by metalorganic vapour phase epitaxy (MOVPE). Key areas are the development of new methods to get reduced threading dislocations in device structures and improving the performance of lasers and light emitting diodes, especially those emitting below 360 nm, where current efficiencies are extremely poor.
Prior to moving to UCC I was the Nitride Team Leader in the EPSRC National Centre for III-V Technologies at the
Currently I am developing a Nitride Materials Research group within the environment of the Tyndall National Institute. We have programmes funded on novel approached to 300-340 nm LEDs (Science Foundation Ireland), Deep 250 nm UV LEDs (European Space Agency) InAlN based transistor reliability (European Space Agency) and for Yellow LEDs (EU Framework 7)
Research Grants
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Foreign Industry | 01-JAN-12 | 01-OCT-15 | Development of III-Nitride Material, InAIN/GaN HEMTS | Principal Investigator |
| Science Foundation of Ireland | 01-NOV-09 | 31-DEC-15 | UK Nitrides Consortium Winter Conference 2010 | Principal Investigator |
| Irish Research Council for Science, Engineering & Technology (IRCSET) | 05-SEP-11 | 30-APR-15 | Development of High Reliability Microwave Transistors for Space Application. | Principal Investigator |
| Foreign Industry | 01-JAN-12 | 01-APR-15 | Coupled Deep UV-LEDs for Charge Control of proof. | Principal Investigator |
| Irish Research Council for Science, Engineering & Technology (IRCSET) | 29-NOV-10 | 28-NOV-12 | IRCSET EMPOWER Postdoctoral Fellowship Tomas Sadler | Principal Investigator |
| Science Foundation Ireland | 01-MAR-11 | 28-FEB-15 | Advanced Ultraviolet Emitters from InAlN Based Alloy Structures | |
| Science Foundation Ireland | 01-APR-09 | 31-MAY-14 | SFI Stokes – Engineering Professorship – Prof Peter Parbrook | |
| European Framework Programme Seven (FP7) | 01-JUN-11 | 01-JUN-14 | Energy for a Green Society (ERG) | |
| European Framework Programme Seven (FP7) | 01-JUN-12 | 01-JUN-15 | AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications | |
| Science Foundation of Ireland | 01-OCT-13 | 30-DEC-20 | US-Ireland Collaborative Research on Nano-GaN Power Electric Devices. | Principal Investigator |
| Science Foundation of Ireland | 01-DEC-15 | 30-NOV-17 | Ultradense Nanostructured Arrays for Nitride Devices | Principal Investigator |
| SFI Industry | 01-JAN-16 | 31-OCT-20 | IPIC TP1c – Intel portion | Principal Investigator |
| Science Foundation of Ireland | 01-JAN-16 | 31-DEC-17 | IPIC TP1c – SFI portion | Principal Investigator |
| Science Foundation of Ireland | 01-JUN-13 | 31-MAY-19 | IPIC Platform – PP | Principal Investigator |
| Science Foundation of Ireland | 01-JAN-19 | 30-JUN-20 | Spectrally pure high efficiency micro-Light Emitting Diodes (microLEDS) using nanostructures active regions | Principal Investigator |
| Irish Research Council for Science, Engineering & Technology (IRCSET) | 01-MAR-19 | 31-DEC-19 | Ulysses 2018 | Principal Investigator |
| Science Foundation of Ireland | 01-JUL-19 | 29-FEB-24 | PIADS PhD3 | Principal Investigator |
| Science Foundation of Ireland | 01-JUN-19 | 31-DEC-25 | IPIC_Phase 2_Platform_PP | Principal Investigator |
| Horizon 2020 | 01-JUL-20 | 28-NOV-23 | Reversed-polarity III-nitride Sensors for Enhanced UV-detection | Principal Investigator |
| Horizon 2020 | 01-SEP-20 | 31-OCT-22 | 847652-SPARKLE-H2020-MSCA-COFUND-2018 | Principal Investigator |
| Science Foundation of Ireland | 01-SEP-20 | 31-OCT-22 | Sparkle Fellow IPIC2 Spokes Co fund | Principal Investigator |
| SFI Industry | 05-MAR-21 | 04-FEB-24 | R&D of AIPD for data communications, sensing, imaging and biophotonics | Principal Investigator |
| Science Foundation of Ireland | 05-MAR-21 | 04-FEB-24 | R&D of AIPD for data communications, sensing, imaging and biophotonics | Principal Investigator |
| Science Foundation of Ireland | 01-APR-22 | 30-JUN-27 | Boron Containg III-N Alloys for Next Generation Visible and UV light Emitting Devices | Principal Investigator |
| Science Foundation of Ireland | 01-SEP-23 | 31-DEC-26 | Aluminium Rich Nitride Electronics (ARNE) | Principal Investigator |
Publications
Peer Reviewed Journals
| Year | Journal | Publication |
|---|---|---|
| 2024 | Physica Status Solidi B-Basic Solid State Physics | Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth Singh, Sandeep M.,Zubialevich, Vitaly Z.,Parbrook, Peter J. (2024) Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth. : . |
| 2023 | BAlGaN light-emitting diode emitting at 350 nm Milner, Peter and Zubialevich, Vitaly Z. and O’Connor, Thomas and Singh, Sandeep M. and Singh, Davinder and Corbett, Brian and Parbrook, Peter J. (2023) BAlGaN light-emitting diode emitting at 350 nm. : . |
|
| 2021 | Journal of Physics D: Applied Physics | A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content Spasevski, L;Kusch, G;Pampili, P;Zubialevich, VZ;Dinh, DV;Bruckbauer, J;Edwards, PR;Parbrook, PJ;Martin, RW (2021) A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content. : IOP PUBLISHING LTD. |
| 2021 | Microscopy and Microanalysis | Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis Spasevski, L;Buse, B;Edwards, PR;Hunter, DA;Enslin, J;Foronda, HM;Wernicke, T;Mehnke, F;Parbrook, PJ;Kneissl, M;Martin, RW (2021) Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis. : CAMBRIDGE UNIV PRESS. |
| 2021 | Langmuir Journal | Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition Mena, J;Carvajal, JJ;Zubialevich, V;Parbrook, PJ;Diaz, F;Aguilo, M (2021) Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition. : AMER CHEMICAL SOC. |
| 2020 | Journal of Applied Physics | Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD Zubialevich, Vitaly Z.; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J. (2020) Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD. : . |
| 2020 | Applied Physics Letters | Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes Freytag S.;Winkler M.;Goldhahn R.;Wernicke T.;Rychetsky M.;Koslow I.;Kneissl M.;Dinh D.;Corbett B.;Parbrook P.;Feneberg M. (2020) Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes. : . |
| 2020 | Crystal Growth & Design | Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy Zubialevich V.Z.;Pampili P.;Parbrook P.J. (2020) Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy. : . |
| 2020 | Journal of Physics D: Applied Physics | The 2020 UV emitter roadmap Amano, H;Collazo, R;De Santi, C;Einfeldt, S;Funato, M;Glaab, J;Hagedorn, S;Hirano, A;Hirayama, H;Ishii, R;Kashima, Y;Kawakami, Y;Kirste, R;Kneissl, M;Martin, R;Mehnke, F;Meneghini, M;Ougazzaden, A;Parbrook, PJ;Rajan, S;Reddy, P;Romer, F;Ruschel, J;Sarkar, B;Scholz, F;Schowalter, LJ;Shields, P;Sitar, Z;Sulmoni, L;Wang, T;Wernicke, T;Weyers, M;Witzigmann, B;Wu, YR;Wunderer, T;Zhang, YW (2020) The 2020 UV emitter roadmap. : IOP PUBLISHING LTD. |
| 2020 | Semiconductor Science and Technology | Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope Trager-Cowan, C;Alasamari, A;Avis, W;Bruckbauer, J;Edwards, PR;Ferenczi, G;Hourahine, B;Kotzai, A;Kraeusel, S;Kusch, G;Martin, RW;McDermott, R;Naresh-Kumar, G;Nouf-Allehiani, M;Pascal, E;Thomson, D;Vespucci, S;Smith, MD;Parbrook, PJ;Enslin, J;Mehnke, F;Kuhn, C;Wernicke, T;Kneissl, M;Hagedorn, S;Knauer, A;Walde, S;Weyers, M;Coulon, PM;Shields, PA;Bai, J;Gong, Y;Jiu, L;Zhang, Y;Smith, RM;Wang, T;Winkelmann, A (2020) Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. : IOP PUBLISHING LTD. |
| 2020 | ECS Transactions | Photoconductive Solution Processed ZnO Quasi-superlattice Films Buckley, D., Inguva, S., McNulty, D., Zubialevich, V. Z., Parbrook, P. J., Gity, F., Hurley, P. & O’Dwyer, C. (2020) Photoconductive Solution Processed ZnO Quasi-superlattice Films. : . |
| 2020 | Applied Physics Letters | Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells Finot, Sylvain; Grenier, Vincent; Zubialevich, Vitaly; Bougerol, Catherine; Pampili, Pietro; Eymery, Joël; Parbrook, Peter J.; Durand, Christophe; Jacopin, Gwénolé (2020) Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells. : . |
| 2020 | Scientific Reports | Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges Alam, SN;Zubialevich, VZ;Ghafary, B;Parbrook, PJ (2020) Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges. : NATURE RESEARCH. |
| 2019 | Japanese Journal of Applied Physics | InAlN-based LEDs emitting in the near-UV region Pampili P.;Zubialevich V.;Maaskant P.;Akhter M.;Corbett B.;Parbrook P. (2019) InAlN-based LEDs emitting in the near-UV region. : . |
| 2019 | Photonics Research | Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films Trager-Cowan C.;Alasmari A.;Avis W.;Bruckbauer J.;Edwards P.;Hourahine B.;Kraeusel S.;Kusch G.;Johnston R.;Naresh-Kumar G.;Martin R.;Nouf-Allehiani M.;Pascal E.;Spasevski L.;Thomson D.;Vespucci S.;Parbrook P.;Smith M.;Enslin J.;Mehnke F.;Kneissl M.;Kuhn C.;Wernicke T.;Hagedorn S.;Knauer A.;Kueller V.;Walde S.;Weyers M.;Coulon P.;Shields P.;Zhang Y.;Jiu L.;Gong Y.;Smith R.;Wang T.;Winkelmann A. (2019) Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. : . |
| 2019 | Photonics Research | Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films Trager-Cowan, C;Alasmari, A;Avis, W;Bruckbauer, J;Edwards, PR;Hourahine, B;Kraeusel, S;Kusch, G;Johnston, R;Naresh-Kumar, G;Martin, RW;Nouf-Allehiani, M;Pascal, E;Spasevski, L;Thomson, D;Vespucci, S;Parbrook, PJ;Smith, MD;Enslin, J;Mehnke, F;Kneissl, M;Kuhn, C;Wernicke, T;Hagedorn, S;Knauer, A;Kueller, V;Walde, S;Weyers, M;Coulon, PM;Shields, PA;Zhang, Y;Jiu, L;Gong, Y;Smith, RM;Wang, T;Winkelmann, A (2019) Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. : OPTICAL SOC AMER. |
| 2018 | Journal of Luminescence | InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter Zubialevich, VZ; Rzheutski, MV; Li, HN; Sadler, TC; Alam, SN; Bhardwaj, V; Lutsenko, EV; Yablonskii, GP; Parbrook, PJ (2018) InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter. : . |
| 2018 | Physica Status Solidi (B) | Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (2018) Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor. : . |
| 2018 | IEEE Photonics Technology Letters | Size-Dependent Bandwidth of Semipolar (11(2)over-bar2) Light-Emitting-Diodes Haemmer, M;Roycroft, B;Akhter, M;Dinh, DV;Quan, Z;Zhao, J;Parbrook, PJ;Corbett, B (2018) Size-Dependent Bandwidth of Semipolar (11(2)over-bar2) Light-Emitting-Diodes. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2018 | Journal of Crystal Growth | Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si Dinh, Duc V.; Parbrook, Peter J. (2018) Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si. : . |
| 2018 | Journal of Physics D: Applied Physics | Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN Pampili P.;Dinh D.;Zubialevich V.;Parbrook P. (2018) Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN. : . |
| 2018 | Journal of Physics D: Applied Physics | Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN Pampili, Pietro; Dinh, Duc V.; Zubialevich, Vitaly Z.; Parbrook, Peter J. (2018) Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN. : . |
| 2018 | Scientific Reports | Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging Kusch, G;Conroy, M;Li, HN;Edwards, PR;Zhao, C;Ooi, BS;Pugh, J;Cryan, MJ;Parbrook, PJ;Martin, RW (2018) Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging. : NATURE PUBLISHING GROUP. |
| 2017 | ECS Transactions | Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films Buckley, D., McCormack, R., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O’Dwyer, C. (2017) Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films. : . |
| 2017 | Nanotechnology | Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD Mena, J.; Carvajal, J. J.; Martínez, O.; Jiménez, J.; Zubialevich, Vitaly, Z.; Parbrook, Peter, J.; Diaz, F.; Aguiló, M. (2017) Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD. : . |
| 2017 | Nanotechnology | Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD Josué, Mena,Joan, J. Carvajal,Oscar, Martínez,Juan, Jiménez,Vitaly, Z. Zubialevich,Peter, J. Parbrook,Francesc, Diaz,Magdalena, Aguiló (2017) Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD. : . |
| 2017 | Journal of Vacuum Science & Technology A | Solution processed ZnO homogeneous quasisuperlattice materials Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O’Dwyer, C. (2017) Solution processed ZnO homogeneous quasisuperlattice materials. : . |
| 2017 | Nanotechnology | Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise (2017) Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well. : . |
| 2017 | Physica Status Solidi A-Applications and Materials Science | Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation Smith, MD;Thomson, D;Zubialevich, VZ;Li, H;Naresh-Kumar, G;Trager-Cowan, C;Parbrook, PJ (2017) Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation. : WILEY-V C H VERLAG GMBH. |
| 2017 | IEEE Transactions On Electron Devices | GaN nanowire Schottky barrier diodes Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mary; Pampili, Pietro; Parbrook, Peter J.; McLaren, Mathew; Arredondo-Arechavala, Miryam; Shen, Z. John (2017) GaN nanowire Schottky barrier diodes. : . |
| 2017 | Materials Science In Semiconductor Processing | Doping of III-nitride materials Pampili, Pietro; Parbrook, Peter J. (2017) Doping of III-nitride materials. : . |
| 2017 | Journal Of Vacuum Science & Technology A: Vacuum, Surfaces, And Films | Solution processed ZnO homogeneous quasisuperlattice materials Darragh Buckley,David McNulty,Vitaly Zubialevich,Peter Parbrook,Colm O’Dwyer (2017) Solution processed ZnO homogeneous quasisuperlattice materials. : . |
| 2017 | Nanotechnology | Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD Mena, J;Carvajal, JJ;Martinez, O;Jimenez, J;Zubialevich, VZ;Parbrook, PJ;Diaz, F;Aguilo, M (2017) Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD. : IOP PUBLISHING LTD. |
| 2017 | IEEE Transactions On Electron Devices | GaN Nanowire Schottky Barrier Diodes Sabui, G;Zubialevich, VZ;White, M;Pampili, P;Parbrook, PJ;McLaren, M;Arredondo-Arechavala, M;Shen, ZJ (2017) GaN Nanowire Schottky Barrier Diodes. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2017 | ECS Transactions | Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors Sabui, G;Zubialevich, VZ;Pampili, P;White, M;Parbrook, PJ;McLaren, M;Arredondo-Arechavala, M;Shen, ZJ (2017) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors. : . |
| 2017 | ECS Transactions | Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O’Dwyer, C. (2017) Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors. : . |
| 2016 | ACS Nano | Ultra-High density arrays of defect free AlN nanorods: a ‘space filling’ approach Conroy, M.; Zubialevich, V.; Li, H.; Petkov, N.; O’Donoghue, S.; Holmes, J. D.; Parbrook, P. J. (2016) Ultra-High density arrays of defect free AlN nanorods: a ‘space filling’ approach. : . |
| 2016 | Nanoscale | Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods (vol 8, pg 11019, 2016) Conroy, M;Li, H;Kusch, G;Zhao, C;Ooi, B;Edwards, PR;Martin, RW;Holmes, JD;Parbrook, PJ (2016) Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods (vol 8, pg 11019, 2016). : ROYAL SOC CHEMISTRY. |
| 2016 | Semiconductor Science and Technology | Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content Zubialevich, VZ,Dinh, DV,Alam, SN,Schulz, S,O’Reilly, EP,Parbrook, PJ (2016) Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content. : . |
| 2016 | AIP Advances | Modeling and simulation of bulk gallium nitride power semiconductor devices Sabui, G,Parbrook, PJ,Arredondo-Arechavala, M,Shen, ZJ (2016) Modeling and simulation of bulk gallium nitride power semiconductor devices. : . |
| 2016 | Nanoscale | Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods Conroy, M,Li, H,Kusch, G,Zhao, C,Ooi, B,Edwards, PR,Martin, RW,Holmes, JD,Parbrook, PJ (2016) Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. : . |
| 2016 | Optics Letters | GHz bandwidth semipolar (11(2)over-bar2) InGaN/GaN light-emitting diodes Dinh, Duc V.; Quan, Zhiheng; Roycroft, Brendan; Parbrook, Peter J.; Corbett, Brian (2016) GHz bandwidth semipolar (11(2)over-bar2) InGaN/GaN light-emitting diodes. : . |
| 2016 | Nanoscale | Influence of plasmonic array geometry on energy transfer from a quantum well to a quantum dot layer Higgins, LJ;Marocico, CA;Karanikolas, VD;Bell, AP;Gough, JJ;Murphy, GP;Parbrook, PJ;Bradley, AL (2016) Influence of plasmonic array geometry on energy transfer from a quantum well to a quantum dot layer. : ROYAL SOC CHEMISTRY. |
| 2016 | Journal of Physics D: Applied Physics | Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells Zubialevich, VZ;Alam, SN;Li, HN;Parbrook, PJ (2016) Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells. : IOP PUBLISHING LTD. |
| 2016 | Journal of Crystal Growth | Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55) Dinh, DV;Pampili, P;Parbrook, PJ (2016) Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55). : ELSEVIER SCIENCE BV. |
| 2016 | Journal of Applied Physics | Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes Dinh, DV;Corbett, B;Parbrook, PJ;Koslow, IL;Rychetsky, M;Guttmann, M;Wernicke, T;Kneissl, M;Mounir, C;Schwarz, U;Glaab, J;Netzel, C;Brunner, F;Weyers, M (2016) Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes. : AMER INST PHYSICS. |
| 2016 | Semiconductor Science and Technology | A comparison of the Co-60 gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications Smith, MD;O'Mahony, D;Vitobello, F;Muschitiello, M;Costantino, A;Barnes, AR;Parbrook, PJ (2016) A comparison of the Co-60 gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications. : IOP PUBLISHING LTD. |
| 2016 | Semiconductor Science and Technology | Exciton localization in polar and semipolar (11(2)over-bar2) In0.2Ga0.8N/GaN multiple quantum wells Dinh, DV;Presa, S;Maaskant, PP;Corbett, B;Parbrook, PJ (2016) Exciton localization in polar and semipolar (11(2)over-bar2) In0.2Ga0.8N/GaN multiple quantum wells. : IOP PUBLISHING LTD. |
| 2016 | IEEE Photonics Journal | High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes Quan, ZH;Dinh, DV;Presa, S;Roycroft, B;Foley, A;Akhter, M;O'Mahony, D;Maaskant, PP;Caliebe, M;Scholz, F;Parbrook, PJ;Corbett, B (2016) High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2016 | ACS Nano | Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach Conroy, Michele,Zubialevich, Vitaly Z.,Li, Haoning,Petkov, Nikolay,O’Donoghue, Sally,Holmes, Justin D.,Parbrook, Peter J. (2016) Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach. : . |
| 2016 | IET Optoelectronics | Thermal modelling of transfer-bonded thin-film gallium arsenide laser diode Quan Z.;Justice J.;Mooney M.;Gubbins M.;Parbrook P.;Corbett B. (2016) Thermal modelling of transfer-bonded thin-film gallium arsenide laser diode. : . |
| 2016 | Journal of Crystal Growth | Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy Dinh, DV;Alam, SN;Parbrook, PJ (2016) Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy. : ELSEVIER SCIENCE BV. |
| 2016 | Physica Status Solidi B-Basic Solid State Physics | Polar and semipolar (11(2)over-bar2) InAlN layers grown on AlN templates using MOVPE Dinh, DV;Li, HN;Parbrook, PJ (2016) Polar and semipolar (11(2)over-bar2) InAlN layers grown on AlN templates using MOVPE. : WILEY-V C H VERLAG GMBH. |
| 2016 | Nanoscale | Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods Conroy, M.; Li, H.; Kusch, G.; Zhao, C.; Ooi, B.; Martin, R. W.; Holmes, J. D.; Parbrook, P. J. (2016) Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods. : . |
| 2016 | Journal of Applied Physics | Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells Dinh, Duc V.; Brunner, Frank; Weyers, Markus; Corbett, Brian M.; Parbrook, Peter J. (2016) Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells. : . |
| 2016 | Semiconductor Science and Technology | Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content. : . |
| 2015 | Journal of Crystal Growth | Single phase (112= 2) AlN grown on (101= 0) sapphire by metalorganic vapour phase epitaxy Dinh, Duc V and Conroy, M and Zubialevich, VZ and Petkov, N and Holmes, JD and Parbrook, PJ (2015) Single phase (112= 2) AlN grown on (101= 0) sapphire by metalorganic vapour phase epitaxy. : . |
| 2015 | Journal of Crystal Growth | Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy Dinh, D. V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy. : . |
| 2015 | Electronic Letters | Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs Akhter, M. Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B. (2015) Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs. : . |
| 2015 | ECS Transactions | Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V., Parbrook, P., Geaney, H., O’Dwyer, C., Díaz, F. & Aguiló, M. (2015) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs. : . |
| 2015 | Electronics Letters | Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs Akhter, M and Pampili, P and Zubialevich, VZ and Eason, C and Quan, ZH and Maaskant, PP and Parbrook, PJ and Corbett, B (2015) Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs. : . |
| 2015 | Journal of Materials Chemistry C | Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods Conroy, M;Zubialevich, VZ;Li, HN;Petkov, N;Holmes, JD;Parbrook, PJ (2015) Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. : ROYAL SOC CHEMISTRY. |
| 2015 | Semiconductor Science and Technology | Semipolar (20(2)over-bar3) nitrides grown on 3C-SiC/(001)Si substrates Dinh, DV;Presa, S;Akhter, M;Maaskant, PP;Corbett, B;Parbrook, PJ (2015) Semipolar (20(2)over-bar3) nitrides grown on 3C-SiC/(001)Si substrates. : IOP PUBLISHING LTD. |
| 2015 | Electronics Letters | Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs Akhter, M,Pampili, P,Zubialevich, VZ,Eason, C,Quan, ZH,Maaskant, PP,Parbrook, PJ,Corbett, B (2015) Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs. : . |
| 2015 | Optics Express | Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure Higgins, LJ;Karanikolas, VD;Marocico, CA;Bell, AP;Sadler, TC;Parbrook, PJ;Bradley, AL (2015) Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. : OPTICAL SOC AMER. |
| 2015 | Nanoscale | Enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination Zhao, C.; Ng, T. K.; Prabaswara, A.; Conroy, M.; Jahangir, S.; Frost, T.; O’Connell, J.; Holmes, J. D.; Parbrook, P. J.; Bhattacharya, P.; Ooi, B. B. (2015) Enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. : . |
| 2015 | Nanoscale | An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination Zhao, C;Ng, TK;Prabaswara, A;Conroy, M;Jahangir, S;Frost, T;O’Connell, J;Holmes, JD;Parbrook, PJ;Bhattacharya, P;Ooi, BS (2015) An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. : ROYAL SOC CHEMISTRY. |
| 2015 | Physica Status Solidi A-Applications and Materials Science | Semipolar (11(2)over-bar2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates Dinh, DV,Akhter, M,Presa, S,Kozlowski, G,O’Mahony, D,Maaskant, PP,Brunner, F,Caliebe, M,Weyers, M,Scholz, F,Corbett, B,Parbrook, PJ (2015) Semipolar (11(2)over-bar2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates. : . |
| 2015 | Applied Physics Letters | InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy Smith, MD;O'Mahony, D;Conroy, M;Schmidt, M;Parbrook, PJ (2015) InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy. : AMER INST PHYSICS. |
| 2015 | ECS Transactions | Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs Carvajal J.;Mena J.;Bilousov O.;Martínez O.;Jiménez J.;Zubialevich V.;Parbrook P.;Geaney H.;O’Dwyer C.;Díaz F.;Aguiló M. (2015) Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs. : . |
| 2015 | Journal of Materials Chemistry C | Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods Conroy, M.; Zubialevich, V. Z.; Li, H.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. : . |
| 2014 | Applied Physics Letters | Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN Kusch, G,Li, HN,Edwards, PR,Bruckbauer, J,Sadler, TC,Parbrook, PJ,Martin, RW (2014) Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN. : . |
| 2014 | Journal of Luminescence | Enhanced UV luminescence from InAlN quantum well structures using two temperature growth Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) Enhanced UV luminescence from InAlN quantum well structures using two temperature growth. : . |
| 2014 | Microscopy and Microanalysis | Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors Trager-Cowan, C and Naresh-Kumar, G and Allehiani, N and Kraeusel, S and Hourahine, B and Vespucci, S and Thomson, D and Bruckbauer, J and Kusch, G and Edwards, PR and others (2014) Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors. : . |
| 2014 | Journal of Crystal Growth | Structural and optical properties of Ga auto-incorporated InALN epilayers Taylor, E and Smith, MD and Sadler, TC and Lorenz, K and Li, HN and Alves, E and Parbrook, PJ and Martin, RW (2014) Structural and optical properties of Ga auto-incorporated InALN epilayers. : . |
| 2014 | Journal of Crystal Growth | Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy Dinh, Duc V and Conroy, M and Zubialevich, VZ and Petkov, N and Holmes, JD and Parbrook, PJ (2014) Single phase (11-22) AlN grown on (10-10) sapphire by metalorganic vapour phase epitaxy. : . |
| 2014 | Journal of Applied Physics | Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy. : . |
| 2014 | Journal of Applied Physics | Comparative study of polar and semipolar (112= 2) InGaN layers grown by metalorganic vapour phase epitaxy Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) Comparative study of polar and semipolar (112= 2) InGaN layers grown by metalorganic vapour phase epitaxy. : . |
| 2014 | Journal of Materials Chemistry C | Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD Smith, MD;Taylor, E;Sadler, TC;Zubialevich, VZ;Lorenz, K;Li, HN;O’Connell, J;Alves, E;Holmes, JD;Martin, RW;Parbrook, PJ (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. : ROYAL SOC CHEMISTRY. |
| 2014 | Journal of Applied Physics | Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy Dinh, DV;Oehler, F;Zubialevich, VZ;Kappers, MJ;Alam, SN;Caliebe, M;Scholtz, F;Humphreys, CJ;Parbrook, PJ (2014) Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy. : AMER INST PHYSICS. |
| 2014 | Luminescence | Enhanced UV luminescence from InAlN quantum well structures using two temperature growth Zubialevich, VZ;Sadler, TC;Dinh, DV;Alam, SN;Li, HN;Pampili, P;Parbrook, PJ (2014) Enhanced UV luminescence from InAlN quantum well structures using two temperature growth. : ELSEVIER SCIENCE BV. |
| 2014 | Journal of Crystal Growth | Structural and optical properties of Ga auto-incorporated InAlN epilayers Taylor, E;Smith, MD;Sadler, TC;Lorenz, K;Li, HN;Alves, E;Parbrook, PJ;Martin, RW (2014) Structural and optical properties of Ga auto-incorporated InAlN epilayers. : ELSEVIER SCIENCE BV. |
| 2014 | Bulletin Of Materials Science | Optimization of nanocrystalline gamma-alumina coating for direct spray water-cooling of optical devices Alam, SN;Anaraky, M;Shafeizadeh, Z;Parbrook, PJ (2014) Optimization of nanocrystalline gamma-alumina coating for direct spray water-cooling of optical devices. : INDIAN ACAD SCIENCES. |
| 2014 | Acs Applied Materials & Interfaces | Fully Porous GaN p-n Junction Diodes Fabricated by Chemical Vapor Deposition Bilousov, OV,Carvajal, JJ,Geaney, H,Zubiaevich, VZ,Parbrook, PJ,Martinez, O,Jimenez, J,Diaz, F,Aguilo, M,O’Dwyer, C (2014) Fully Porous GaN p-n Junction Diodes Fabricated by Chemical Vapor Deposition. : . |
| 2014 | Bulletin Of Materials Science | Optimization of nanocrystalline γ -alumina coating for direct spray water-cooling of optical devices Alam S.;Anaraky M.;Shafeizadeh Z.;Parbrook P. (2014) Optimization of nanocrystalline γ -alumina coating for direct spray water-cooling of optical devices. : . |
| 2014 | Acs Applied Materials & Interfaces | Fully porous GaN p-n junctions fabricated by chemical vapor deposition. Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. & O’Dwyer, C. (2014) Fully porous GaN p-n junctions fabricated by chemical vapor deposition.. : . |
| 2013 | Applied Physics Letters | Fabrication of p-type porous GaN on silicon and epitaxial GaN Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O’Dwyer, C (2013) Fabrication of p-type porous GaN on silicon and epitaxial GaN. : . |
| 2013 | Applied Physics Express | Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O’Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . |
| 2013 | Physica Status Solidi (C) Current Topics in Solid State Physics | Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping Kachkanov, Vyacheslav and Dolbnya, Igor and O’Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. : . |
| 2013 | ECS Transactions | Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells Conroy, Michele Ann and Petkov, Nikolay and Li, Haoning N and Sadler, Thomas C and Zubialevich, Vitaly and Holmes, Justin D and Parbrook, Peter J (2013) Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells. : . |
| 2013 | Applied Physics Letters | The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures Smith, MD;Sadler, TC;Li, HN;Zubialevich, VZ;Parbrook, PJ (2013) The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures. : AMER INST PHYSICS. |
| 2013 | Physica Status Solidi C – Current Topics In Solid State Physics | Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping Kachkanov V.;Dolbnya I.;O’Donnell K.;Lorenz K.;Pereira S.;Watson I.;Sadler T.;Li H.;Zubialevich V.;Parbrook P. (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. : . |
| 2013 | Applied Physics Letters | Fabrication of p-type porous GaN on silicon and epitaxial GaN O. V. Bilousov, H. Geaney, J. J. Carvajal, V. Z. Zubialevich, P. J. Parbrook, A. Giguère, D. Drouin, F. Díaz, M. Aguiló and C. O’Dwyer (2013) Fabrication of p-type porous GaN on silicon and epitaxial GaN. : . |
| 2013 | Journal of Crystal Growth | AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers Li, HN;Sadler, TC;Parbrook, PJ (2013) AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers. : ELSEVIER SCIENCE BV. |
| 2012 | Physical Review Letters | Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope Gunasekar Naresh, Hourahine Benjamin, Edwards Paul, Day A.P., Winkelmann Aimo, Wilkinson A.J., Parbrook P.J., England G., Trager-Cowan Carol (2012) Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope. : . |
| 2012 | Physica Status Solidi A-Applications and Materials Science | Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope G. Naresh-Kumar, B. Hourahine, A. Vilalta-Clemente, P. Ruterana, P. Gamarra, C. Lacam, M. Tordjman, M. A. di Forte-Poisson3, P. J. Parbrook, A. P. Day, G. England, C. Trager-Cowan (2012) Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. : . |
| 2011 | IEEE Journal of Selected Topics In Quantum Electronics | Light Emitting and Laser Diodes in the Ultraviolet Parbrook, PJ;Wang, T (2011) Light Emitting and Laser Diodes in the Ultraviolet. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2010 | Physica Status Solidi B-Basic Solid State Physics | The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes Lee, KB; Parbrook, PJ; Wang, T; Bai, J; Ranalli, F; Airey, RJ; Hill, G; (2010) The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. : . |
| 2010 | Rapid Communications In Mass Spectrometry | Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1-xN structures using optical conductivity enhancement Morris, RJH; Dowsett, MG; Beanland, R; Parbrook, PJ; McConville, CF; (2010) Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/InxGa1-xN structures using optical conductivity enhancement. : . |
| 2010 | Applied Physics Letters | Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy Gradkowski, K;Sadler, TC;Mereni, LO;Dimastrodonato, V;Parbrook, PJ;Huyet, G;Pelucchi, E (2010) Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy. : AMER INST PHYSICS. |
| 2010 | Journal of Applied Physics | Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe Green, RT; Luxmoore, J; Lee, KB; Houston, PA; Ranalli, F; Wang, T; Parbrook, PJ; Uren, MJ; Wallis, DJ; Martin, T; (2010) Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe. : . |
| 2009 | Journal of Applied Physics | Optical and microstructural study of a single layer of InGaN quantum dots Bai, J. and Wang, Q. and Wang, T. and Cullis, A. G. and Parbrook, P. J.; (2009) Optical and microstructural study of a single layer of InGaN quantum dots. : . |
| 2009 | Journal Of Electronic Materials | Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl-2/Ar-Based Inductively Coupled Plasma Dry Etching Dylewicz, R. and Patela, S. and Hogg, R. A. and Fry, P. W. and Parbrook, P. J. and Airey, R. and Tahraoui, A.; (2009) Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl4/Cl-2/Ar-Based Inductively Coupled Plasma Dry Etching. : . |
| 2009 | Semiconductor Science and Technology | Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes Green, R. T. and Luxmoore, I. J. and Houston, P. A. and Ranalli, F. and Wang, T. and Parbrook, P. J. and Uren, M. J. and JWallis, D. and Martin, T.; (2009) Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes. : . |
| 2009 | Applied Physics Letters | Optical and microstructural studies of InGaN/GaN quantum dot ensembles Davies, S. C. and Mowbray, D. J. and Ranalli, F. and Parbrook, P. J. and Wang, Q. and Wang, T. and Yea, B. S. and Sherliker, B. J. and Halsall, M. P. and Kashtiban, R. J. and Bangert, U.; (2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles. : . |
| 2009 | Journal of Crystal Growth | Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes Lee, KB,Parbrook, PJ,Wang, T,Bai, J,Ranalli, F,Airey, RJ,Hill, G (2009) Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. : . |
| 2009 | IEEE Photonics Technology Letters | In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region Dylewicz, R. and Patela, S. and Hogg, R. A. and Fry, P. W. and Parbrook, P. J. and Airey, R. and Tahraoui, A.; (2009) In-Plane Optical Anisotropy of GaN Refractive Index in Visible Light Region. : . |
| 2008 | Journal Of Physics D-Applied Physics | Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer Airey, R. J. and Lee, K. B. and Parbrook, P. J. and Bai, J. and Ranalli, F. and Wang, T. and Hill, G.; (2008) Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer. : . |
| 2008 | Surface Science | Generation of misfit dislocations in highly mismatched GaN/AlN layers Bai, J. and Wang, T. and Lee, K. B. and Parbrook, P. J. and Wang, Q. and Cullis, A. G.; (2008) Generation of misfit dislocations in highly mismatched GaN/AlN layers. : . |
| 2008 | Applied Physics Letters | Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes Wang, Q. and Wang, T. and Bai, J. and Cullis, A. G. and Parbrook, P. J. and Ranalli, F.; (2008) Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes. : . |
| 2008 | Journal Of Physics D-Applied Physics | The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer Wang, T. and Lee, K. B. and Bai, J. and Parbrook, P. J. and Ranalli, F. and Wang, Q. and Airey, R. J. and Cullis, A. G. and Zhang, H. X. and Massoubre, D. and Gong, Z. and Watson, I. M. and Gu, E. and Dawson, M. D.; (2008) The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer. : . |
| 2008 | Journal of Applied Physics | Excitonic spin lifetimes in InGaN quantum wells and epilayers Brown, J. and Wells, J. -P. R. and Kundys, D. O. and Fox, A. M. and Wang, T. and Parbrook, P. J. and Mowbray, D. J. and Skolnick, M. S.; (2008) Excitonic spin lifetimes in InGaN quantum wells and epilayers. : . |
| 2008 | Journal of Applied Physics | Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer Wang, Q. and Wang, T. and Bai, J. and Cullis, A. G. and Parbrook, P. J. and Ranalli, F.; (2008) Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer. : . |
| 2007 | Physical Review B | Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films Trager-Cowan, C. and Sweeney, F. and Trimby, P. W. and Day, A. P. and Gholinia, A. and Schmidt, N. -H. and Parbrook, P. J. and Wilkinson, A. J. and Watson, I. M.; (2007) Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. : . |
| 2007 | Journal of Applied Physics | Optical investigation of exciton localization in AlxGa1-xN Lee, K. B. and Parbrook, P. J. and Wang, T. and Ranalli, F. and Martin, T. and Balmer, R. S. and Wallis, D. J.; (2007) Optical investigation of exciton localization in AlxGa1-xN. : . |
| 2007 | Applied Physics Letters | Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004) Fan, W. H. and Olaizola, S. M. and Wells, J.-P. R. and Fox, A. M. and Wang, T. and Parbrook, P. J. and Mowbray, D. J. and Skolnick, M. S.; (2007) Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004). : . |
| 2007 | Journal of Applied Physics | The influence of a capping layer on optical properties of self-assembled InGaN quantum dots Wang, Q. and Wang, T. and Parbrook, P. J. and Bai, J. and Cullis, A. G.; (2007) The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. : . |
| 2007 | Journal of Applied Physics | GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates Alyamani, A. and Sanvitto, D. and Khalifa, A. A. and Skolnick, M. S. and Wang, T. and Ranalli, F. and Parbrook, P. J. and Tahraoui, A. and Airey, R.; (2007) GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. : . |
| 2007 | Applied Physics Letters | Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy King, P. D. C. and Veal, T. D. and Jefferson, P. H. and McConville, C. F. and Wang, T. and Parbrook, P. J. and Lu, Hai and Schaff, W. J.; (2007) Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy. : . |
| 2007 | Superlattices And Microstructures | Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells Olaizola, S. M. and Fan, W. H. and Mowbray, D. J. and Skolnick, M. S. and Parbrook, P. J. and Fox, A. M.; (2007) Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells. : . |
| 2007 | Applied Physics Letters | Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer Bai, J. and Wang, T. and Parbrook, P. J. and Wang, Q. and Lee, K. B. and Cullis, A. G.; (2007) Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer. : . |
| 2007 | Journal of Crystal Growth | InGaN/GaN quantum wells with low growth temperature GaN cap layers Pendlebury, S. T. and Parbrook, P. J. and Mowbray, D. J. and Wood, D. A. and Lee, K. B.; (2007) InGaN/GaN quantum wells with low growth temperature GaN cap layers. : . |
| 2007 | Journal Of Electronic Materials | Investigations on electrode-less wet etching of GaN using continuous ultraviolet illumination Green, R. T. and Tan, W. S. and Houston, P. A. and Wang, T. and Parbrook, P. J.; (2007) Investigations on electrode-less wet etching of GaN using continuous ultraviolet illumination. : . |
| 2007 | Semiconductor Science and Technology | Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 mu m wavelength range Sherliker, Ben and Halsall, Matthew and Kasalynas, Irmantas and Seliuta, Dalius and Valusis, Gintaras and Vengris, Mikas and Barkauskas, Martynas and Sirutkaitis, Valdas and Harrison, P. and Jovanovic, V. D. and Indjin, D. and Ikonic, Z. and Parbrook, P. J. and Wang, T. and Buckle, P. D.; (2007) Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 mu m wavelength range. : . |
| 2006 | Materials Science And Technology | Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging Trager-Cowan, C. and Sweeney, F. and Winkelmann, A. and Wilkinson, A. J. and Trimby, P. W. and Day, A. P. and Gholinia, A. and Schmidt, N. H. and Parbrook, P. J. and Watson, I. M.; (2006) Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging. : . |
| 2006 | Physical Review B | Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN Aliev, G. N. and Zeng, S. and Bingham, S. J. and Wolverson, D. and Davies, J. J. and Wang, T. and Parbrook, P. J.; (2006) Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN. : . |
| 2006 | Applied Physics Letters | Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer Bai, J. and Wang, T. and Parbrook, P. J. and Cullis, A. G.; (2006) Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer. : . |
| 2006 | Journal of Crystal Growth | V-shaped pits formed at the GaN/AlN interface Bai, J and Wang, T and Parbrook, PJ and Ross, IM and Cullis, AG; (2006) V-shaped pits formed at the GaN/AlN interface. : . |
| 2006 | Journal of Applied Physics | Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate Bai, J and Wang, T and Comming, P and Parbrook, PJ and David, JPR and Cullis, AG; (2006) Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. : . |
| 2006 | Applied Physics Letters | Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer Wang, T. and Lee, K. B. and Bai, J. and Parbrook, P. J. and Airey, R. J. and Wang, Q. and Hill, G. and Ranalli, F. and Cullis, A. G.; (2006) Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. : . |
| 2006 | Physica Status Solidi B-Basic Solid State Physics | Fast spin relaxation in InGaN/GaN multiple quantum wells Brown, J and Wells, JPR and Hashemizadeh, SA and Parbrook, PJ and Wang, T and Fox, AM and Mowbray, DJ and Skolnick, MS; (2006) Fast spin relaxation in InGaN/GaN multiple quantum wells. : . |
| 2006 | Physical Review B | Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing Kundys, DO and Wells, JPR and Andreev, AD and Hashemizadeh, SA and Wang, T and Parbrook, PJ and Fox, AM and Mowbray, DJ and Skolnick, MS; (2006) Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing. : . |
| 2006 | Applied Physics Letters | Effects of depletion on the emission from individual InGaN dots Sherliker, B and Halsall, MP and Buckle, PD and Parbrook, PJ and Wang, T; (2006) Effects of depletion on the emission from individual InGaN dots. : . |
| 2006 | Applied Physics Letters | Origin of the red luminescence in Mg-doped GaN Zeng, S. and Aliev, G. N. and Wolverson, D. and Davies, J. J. and Bingham, S. J. and Abdulmalik, D. A. and Coleman, P. G. and Wang, T. and Parbrook, P. J.; (2006) Origin of the red luminescence in Mg-doped GaN. : . |
| 2006 | Applied Physics Letters | Time-resolved photoluminescence studies of carrier diffusion in GaN Olaizola, S. M. and Fan, W. H. and Hashemizadeh, S. A. and Wells, J. -P. R. and Mowbray, D. J. and Skolnick, M. S. and Fox, A. M. and Parbrook, P. J.; (2006) Time-resolved photoluminescence studies of carrier diffusion in GaN. : . |
| 2006 | IEEE Journal of Quantum Electronics | Time evolution of the screening of piezoelectric fields in InGaN quantum wells Brown, Iain H. and Blood, Peter and Smowton, Peter M. and Thomson, John D. and Olaizola, Santiago M. and Fox, A. Mark and Parbrook, Peter J. and Chow, Weng W.; (2006) Time evolution of the screening of piezoelectric fields in InGaN quantum wells. : . |
| 2005 | Applied Physics Letters | Fabrication and optical investigation of a high-density GaN nanowire array Wang, T and Ranalli, F and Parbrook, PJ and Airey, R and Bai, J and Rattlidge, R and Hill, G; (2005) Fabrication and optical investigation of a high-density GaN nanowire array. : . |
| 2005 | Physical Review B | Nature of acceptor states in magnesium-doped gallium nitride Aliev, GN and Zeng, S and Davies, JJ and Wolverson, D and Bingham, SJ and Parbrook, PJ and Wang, T; (2005) Nature of acceptor states in magnesium-doped gallium nitride. : . |
| 2005 | Journal of Crystal Growth | A study of dislocations in AIN and GaN films grown on sapphire substrates Bai, J and Wang, T and Parbrook, PJ and Lee, KB and Cullis, AG; (2005) A study of dislocations in AIN and GaN films grown on sapphire substrates. : . |
| 2005 | Applied Physics Letters | Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer Wang, T and Bai, J and Parbrook, PJ and Cullis, AG; (2005) Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer. : . |
| 2005 | Applied Physics Letters | Picosecond carrier dynamics in AllnGaN multiple quantum wells Hashemizadeh, SA and Wells, JPR and Murzyn, P and Brown, J and Jones, BD and Wang, T and Parbrook, PJ and Fox, AM and Mowbray, DJ and Skolnick, MS; (2005) Picosecond carrier dynamics in AllnGaN multiple quantum wells. : . |
| 2005 | Microelectronics Journal | Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN Sherliker, B and Harmer, P and Halsall, MP and Buckle, P and Parbrook, PJ and Wang, T; (2005) Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. : . |
| 2005 | Acta Physica Polonica A | Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors Sherliker, B and Halsall, MP and Harrison, P and Jovanovic, VD and Indjin, D and Ikonic, Z and Parbrook, PJ and Whitehead, MA and Wang, T and Buckle, PD and Phillips, J and Carder, D; (2005) Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors. : . |
| 2005 | Journal of Applied Physics | Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes Wang, T and Raviprakash, G and Ranalli, F and Harrison, CN and Bai, J and David, JPR and Parbrook, PJ and Ao, JP and Ohno, Y; (2005) Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. : . |
| 2004 | Journal of Crystal Growth | Study of stimulated emission from InGaN/GaN multiple quantum well structures Wang, T and Parbrook, PJ and Whitehead, MA and Fan, WH and Fox, AM; (2004) Study of stimulated emission from InGaN/GaN multiple quantum well structures. : . |
| 2004 | Physical Review B | Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN Halsall, MP and Harmer, P and Parbrook, PJ and Henley, SJ; (2004) Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN. : . |
| 2004 | Applied Physics Letters | Optical investigation of InGaN/GaN multiple-quantum wells under high excitation Wang, T and Parbrook, PJ and Fan, WH and Fox, AM; (2004) Optical investigation of InGaN/GaN multiple-quantum wells under high excitation. : . |
| 2004 | Applied Physics Letters | Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells Fan, WH and Olaizola, SM and Wells, JPR and Fox, AM and Wang, T and Parbrook, PJ and Mowbray, DJ and Skolnick, MS; (2004) Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. : . |
| 2004 | Applied Physics Letters | Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003) O’Neill, JP and Ross, IM and Cullis, AG and Wang, T and Parbrook, PJ; (2004) Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003). : . |
| 2004 | Journal of Crystal Growth | Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-y N distributed Bragg reflectors Wang, T and Parbrook, PJ and Harrison, CN and Ao, JP and Ohno, Y; (2004) Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-y N distributed Bragg reflectors. : . |
| 2004 | Applied Physics Letters | High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm Wang, T and Lynch, RJ and Parbrook, PJ and Butte, R and Alyamani, A and Sanvitto, D and Whittaker, DM and Skolnick, MS; (2004) High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm. : . |
| 2003 | Applied Physics Letters | Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1-xN/AlN/GaN heterostructures Lafford, TA and Parbrook, PJ and Tanner , BK; (2003) Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1-xN/AlN/GaN heterostructures. : . |
| 2003 | PHYSICA STATUS SOLIDI B-BASIC RESEARCH | Carrier capture times in InGaN/GaN multiple quantum wells Fan, WH and Olaizola, SM and Wang, T and Parbrook, PJ and Wells, JPR and Mowbray, DJ and Skolnick, MS and Fox, AM; (2003) Carrier capture times in InGaN/GaN multiple quantum wells. : . |
| 2003 | PHILOSOPHICAL MAGAZINE | Crack initiation and termination in III-V epitaxial layers Murray, RT and Hill, G and Hopkinson, M and Parbrook, PJ; (2003) Crack initiation and termination in III-V epitaxial layers. : . |
| 2003 | Applied Physics Letters | Metastable rocksalt phase in epitaxial GaN on sapphire Lada, M and Cullis, AG and Parbrook, PJ and Hopkinson, M; (2003) Metastable rocksalt phase in epitaxial GaN on sapphire. : . |
| 2003 | Journal of Crystal Growth | Effect of anneal temperature on GaN nucleation layer transformation Lada, M and Cullis, AG and Parbrook, PJ; (2003) Effect of anneal temperature on GaN nucleation layer transformation. : . |
| 2003 | Applied Physics Letters | Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells O’Neill, JP and Ross, IM and Cullis, AG and Wang, T and Parbrook, PJ; (2003) Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells. : . |
| 2003 | JOURNAL OF MATERIALS SCIENCE LETTERS | Orientation of cracks in AlGaN epilayers with sapphire substrates Murray, RT and Parbrook, PJ and Wood, DA; (2003) Orientation of cracks in AlGaN epilayers with sapphire substrates. : . |
| 2002 | Applied Physics Letters | Effect of Si doping on the relaxation mechanism of InGaAs on GaAs Parbrook, PJ and Tanner, BK and Lunn, B and Hogg, JHC and Keir, AM and Johnson, AD; (2002) Effect of Si doping on the relaxation mechanism of InGaAs on GaAs. : . |
| 2002 | Journal of Applied Physics | Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts Maffeis, TGG and Simmonds, MC and Clark, SA and Peiro, F and Haines, P and Parbrook, PJ; (2002) Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts. : . |
| 2002 | Journal Of Physics D-Applied Physics | Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors Tan, WS and Houston, PA and Parbrook, PJ and Hill, G and Airey, RJ; (2002) Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors. : . |
| 2002 | Materials Science and Engineering B-Solid State Materials For Advanced Technology | Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs Xia, R and Harrison, I and Larkins, EC and Andrianov, AV and Dods, SRA and Morgan, J and Parbrook, PJ and Button, CC and Hill, G; (2002) Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs. : . |
| 2002 | Applied Physics Letters | Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Tan, WS and Houston, PA and Parbrook, PJ and Wood, DA and Hill, G and Whitehouse, CR; (2002) Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors. : . |
| 2002 | Journal Of Physics D-Applied Physics | Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures Olaizola, SM and Pendlebury, ST and O’Neill, JP and Mowbray, DJ and Cullis, AG and Skolnick, MS and Parbrook, PJ and Fox, AM; (2002) Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures. : . |
| 2001 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | The influence of buffer layer growth parameters on the microstructure and surface morphology of GaN on sapphire substrates correlated with in-situ reflectivity Wood, DA and Parbrook, PJ and Lynch, RJ and Lada, M and Cullis, AG; (2001) The influence of buffer layer growth parameters on the microstructure and surface morphology of GaN on sapphire substrates correlated with in-situ reflectivity. : . |
| 2001 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells Pendlebury, ST and Lynam, P and Mowbray, DJ and Parbrook, PJ and Wood, DA and Lada, M and O’Neill, JP and Cullis, AG and Skolnick, MS; (2001) Optical characterisation of AlGaN epitaxial layers and GaN/AlGaN quantum wells. : . |
| 2001 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | Optimisation of AlGaN/GaN heterostructures for field effect transistors grown by metalorganic vapour phase epitaxy Parbrook, PJ and Wood, DA and Tan, WS and Houston, PA and Hill, G and Whitehouse, CR and Martin, RW and Trager-Cowan, C and Watt, A; (2001) Optimisation of AlGaN/GaN heterostructures for field effect transistors grown by metalorganic vapour phase epitaxy. : . |
| 2000 | Applied Physics Letters | Dependence of the critical thickness on Si doping of InGaAs on GaAs Tanner, BK and Parbrook, PJ and Whitehouse, CR and Keir, AM and Johnson, AD and Jones, J and Wallis, D and Smith, LM and Lunn, B and Hogg, JHC; (2000) Dependence of the critical thickness on Si doping of InGaAs on GaAs. : . |
| 2000 | Thin Solid Films | Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE Ozanyan, KB and Parbrook, PJ and Hopkinson, M and Whitehouse, CR; (2000) Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE. : . |
| 1999 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study Maffeis, TGG and Clark, SA and Dunstan, PR and Wilks, SP and Evans, DA and Peiro, F and Riechert, H and Parbrook, PJ; (1999) GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study. : . |
| 1998 | Journal of Crystal Growth | Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs O’Donnell, CB and Lacey, G and Horsburgh, G and Cullis, AG and Whitehouse, CR and Parbrook, PJ and Meredith, W and Galbraith, I and Mock, P and Prior, KA and Cavenett, BC; (1998) Measurements by X-ray topography of the critical thickness of ZnSe grown on GaAs. : . |
| 1998 | Journal of Crystal Growth | CdSe single quantum wells (SQW): are they dots? O’Donnell, KP and Chinyama, K and Parbrook, PJ and Rosenauer, A and Umlauff, M and Kalt, H and Gerthsen, D; (1998) CdSe single quantum wells (SQW): are they dots?. : . |
| 1998 | Applied Surface Science | Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy Parbrook, PJ and Ozanyan, KB and Hopkinson, M and Whitehouse, CR and Sobiesierski, Z and Westwood, DI; (1998) Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. : . |
| 1998 | Applied Physics Letters | Optical monitoring of InP monolayer growth rates Parbrook, PJ and Ozanyan, KB and Hopkinson, M and Whitehouse, CR and Sobiesierski, Z and Westwood, DI; (1998) Optical monitoring of InP monolayer growth rates. : . |
| 1998 | Applied Surface Science | In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system Lacey, G and Whitehouse, CR and Parbrook, PJ and Cullis, AG and Keir, AM and Mock, P and Johnson, AD and Smith, GW and Clark, GF and Tanner, BK and Martin, T and Lunn, B and Hogg, JHC and Emeny, MT and Murphy, B and Bennett, S; (1998) In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system. : . |
| 1998 | Applied Physics Letters | Topography measurements of the critical thickness of ZnSe grown on GaAs Horsburgh, G and Prior, KA and Meredith, W and Galbraith, I and Cavenett, BC and Whitehouse, CR and Lacey, G and Cullis, AG and Parbrook, PJ and Mock, P and Mizuno, K; (1998) Topography measurements of the critical thickness of ZnSe grown on GaAs. : . |
| 1997 | Journal of Applied Physics | In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy Ozanyan, KB and Parbrook, PJ and Hopkinson, M and Whitehouse, CR and Sobiesierski, Z and Westwood, DI; (1997) In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. : . |
| 1997 | Applied Physics Letters | As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy Sobiesierski, Z and Westwood, DI and Parbrook, PJ and Ozanyan, KB and Hopkinson, M and Whitehouse, CR; (1997) As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. : . |
| 1996 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment Onomura, M and Saito, S and Rennie, J and Nishikawa, Y and ParbrooK, PJ and Ishikawa, M and Hatakoshi, G; (1996) Schottky barrier height reduction for p-ZnSe contacts by sulfur treatment. : . |
| 1995 | Journal of Crystal Growth | DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION PARBROOK, PJ and ISHIKAWA, M and NISHIKAWA, Y and SAITO, S and ONOMURA, M and HATAKOSHI, G; (1995) DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION. : . |
| 1995 | Journal of Crystal Growth | THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY NISHIKAWA, Y and ISHIKAWA, M and PARBROOK, PJ and ONOMURA, M and SAITO, S and HATAKOSHI, GI; (1995) THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY. : . |
| 1994 | Electronics Letters | HIGH-BRIGHTNESS LOW-VOLTAGE MESA STYLE ZNSE LIGHT-EMITTING-DIODES RENNIE, J and ONOMURA, M and NISHIKAWA, Y and SAITO, S and PARBROOK, PJ and NITTA, K and ISHIKAWA, M and HATAKOSHI, G; (1994) HIGH-BRIGHTNESS LOW-VOLTAGE MESA STYLE ZNSE LIGHT-EMITTING-DIODES. : . |
| 1993 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | CDZNSE-ZNSE MULTILAYERS BY METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLSELENIDE PARBROOK, PJ and KAMATA, A and UEMOTO, T; (1993) CDZNSE-ZNSE MULTILAYERS BY METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLSELENIDE. : . |
| 1993 | Electronics Letters | BLUE-GREEN LASER-DIODE OPERATION OF CDZNSE/ZNSE MQW STRUCTURES GROWN ON INGAP BAND-OFFSET REDUCTION LAYERS ONOMURA, M and ISHIKAWA, M and NISHIKAWA, Y and SAITO, S and PARBROOK, PJ and NITTA, K and RENNIE, J and HATAKOSHI, G; (1993) BLUE-GREEN LASER-DIODE OPERATION OF CDZNSE/ZNSE MQW STRUCTURES GROWN ON INGAP BAND-OFFSET REDUCTION LAYERS. : . |
| 1993 | Physica B | GROWTH AND OPTICAL CHARACTERIZATION OF BINARY II-VI SLS ODONNELL, KP and PARBROOK, PJ and YANG, F and CHEN, X and TRAGERCOWAN, C; (1993) GROWTH AND OPTICAL CHARACTERIZATION OF BINARY II-VI SLS. : . |
| 1993 | Journal of Crystal Growth | THE GROWTH AND CHARACTERIZATION OF CADMIUM SELENIDE AND CADMIUM ZINC SELENIDE EPILAYERS BY MOVPE PARBROOK, PJ and KAMATA, A and UEMOTO, T; (1993) THE GROWTH AND CHARACTERIZATION OF CADMIUM SELENIDE AND CADMIUM ZINC SELENIDE EPILAYERS BY MOVPE. : . |
| 1992 | Journal of Crystal Growth | ELECTRON-BEAM EXCITATION AND PROFILING OF STRAINED CDS EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON GAAS(111)A, GAAS(100), ZNSE(100) AND ZNS(100) SUBSTRATES TRAGERCOWAN, C and PARBROOK, PJ and YANG, F and CHEN, X and HENDERSON, B and ODONNELL, KP and COCKAYNE, B and WRIGHT, PJ; (1992) ELECTRON-BEAM EXCITATION AND PROFILING OF STRAINED CDS EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON GAAS(111)A, GAAS(100), ZNSE(100) AND ZNS(100) SUBSTRATES. : . |
| 1992 | Journal of Crystal Growth | CRITICAL THICKNESS OF COMMON-ANION-II-VI STRAINED LAYER SUPERLATTICES (SLSS) PARBROOK, PJ and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B; (1992) CRITICAL THICKNESS OF COMMON-ANION-II-VI STRAINED LAYER SUPERLATTICES (SLSS). : . |
| 1992 | Semiconductor Science and Technology | BAND ALIGNMENTS IN ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES TRAGERCOWAN, C and PARBROOK, PJ and HENDERSON, B and ODONNELL, KP; (1992) BAND ALIGNMENTS IN ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES. : . |
| 1992 | Journal of Luminescence | LUMINESCENCE AND ITS DYNAMICS OF ZNSE/ZNS SUPERLATTICES SACK, W and OBERHAUSER, D and ODONNELL, KP and PARBROOK, PJ and WRIGHT, PJ and COCKAYNE, B and KLINGSHIRN, C; (1992) LUMINESCENCE AND ITS DYNAMICS OF ZNSE/ZNS SUPERLATTICES. : . |
| 1992 | Journal of Crystal Growth | ARE LOCALIZED EXCITONS RESPONSIBLE FOR LASING IN DISORDERED SHORT-PERIOD II-VI STRAINED LAYER SUPERLATTICES ODONNELL, KP and FUJII, Y and PARBROOK, PJ and SUEMUNE, I; (1992) ARE LOCALIZED EXCITONS RESPONSIBLE FOR LASING IN DISORDERED SHORT-PERIOD II-VI STRAINED LAYER SUPERLATTICES. : . |
| 1992 | Journal of Crystal Growth | THE OPTICAL-PROPERTIES OF WIDE BANDGAP BINARY-II-VI SUPERLATTICES ODONNELL, KP and PARBROOK, PJ and YANG, F and CHEN, X and IRVINE, DJ and TRAGERCOWAN, C and HENDERSON, B and WRIGHT, PJ and COCKAYNE, B; (1992) THE OPTICAL-PROPERTIES OF WIDE BANDGAP BINARY-II-VI SUPERLATTICES. : . |
| 1992 | Journal of Luminescence | PHONON-ASSISTED EXCITON LUMINESCENCE IN A CDSE-ZNSE DISORDERED SUPERLATTICE YANG, F and PARBROOK, PJ and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B; (1992) PHONON-ASSISTED EXCITON LUMINESCENCE IN A CDSE-ZNSE DISORDERED SUPERLATTICE. : . |
| 1991 | Semiconductor Science and Technology | INTERDIFFUSION IN WIDE-BANDGAP ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES PARBROOK, PJ and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B; (1991) INTERDIFFUSION IN WIDE-BANDGAP ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES. : . |
| 1991 | Superlattices And Microstructures | EXCITON BINDING-ENERGIES IN II-VI-COMPOUND STRAINED LAYER SUPERLATTICES YANG, F and PARBROOK, PJ and TRAGER, C and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B; (1991) EXCITON BINDING-ENERGIES IN II-VI-COMPOUND STRAINED LAYER SUPERLATTICES. : . |
| 1991 | Institute of Physics Conference Series | ELECTRON-BEAM EXCITATION AND PROFILING OF CDSE-ZNSE MULTIPLE QUANTUM-WELL AND STRAINED LAYER SUPERLATTICE STRUCTURES TRAGERCOWAN, C and PARBROOK, PJ and CLARK, D and HENDERSON, B and ODONNELL, KP and COCKAYNE, B and WRIGHT, PJ; (1991) ELECTRON-BEAM EXCITATION AND PROFILING OF CDSE-ZNSE MULTIPLE QUANTUM-WELL AND STRAINED LAYER SUPERLATTICE STRUCTURES. : . |
| 1991 | Journal of Crystal Growth | CONTROL OF PREREACTION IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZINC-BASED AND CADMIUM-BASED CHALCOGENIDES WRIGHT, PJ and COCKAYNE, B and PARBROOK, PJ and OLIVER, PE and JONES, AC; (1991) CONTROL OF PREREACTION IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ZINC-BASED AND CADMIUM-BASED CHALCOGENIDES. : . |
| 1991 | Superlattices And Microstructures | LUMINESCENCE OF ZNSE/ZNS SUPERLATTICES OBERHAUSER, D and SACK, W and KLINGSHIRN, C and ODONNEL, KP and PARBROOK, PJ and WRIGHT, PJ and COCKAYNE, B; (1991) LUMINESCENCE OF ZNSE/ZNS SUPERLATTICES. : . |
| 1991 | Journal of Luminescence | ELECTRON-BEAM EXCITATION OF II-VI COMPOUND STRAINED LAYER SUPERLATTICES TRAGERCOWAN, C and PARBROOK, PJ and CLARK, D and GREEN, G and WISEMAN, AB and HENDERSON, B and ODONNELL, KP and COCKAYNE, B and WRIGHT, PJ; (1991) ELECTRON-BEAM EXCITATION OF II-VI COMPOUND STRAINED LAYER SUPERLATTICES. : . |
| 1991 | Applied Physics Letters | OPTICAL-ABSORPTION OF ZNSE-ZNS STRAINED LAYER SUPERLATTICES YANG, F and PARBROOK, PJ and HENDERSON, B and ODONNELL, KP and WRIGHT, PJ and COCKAYNE, B; (1991) OPTICAL-ABSORPTION OF ZNSE-ZNS STRAINED LAYER SUPERLATTICES. : . |
| 1990 | Journal of Crystal Growth | MOCVD LAYER GROWTH OF ZNSE AND ZNS/ZNSE MULTIPLE LAYERS USING NITROGEN CONTAINING ADDUCTS OF DIMETHYLZINC WRIGHT, PJ and COCKAYNE, B and PARBROOK, PJ and JONES, AC and OBRIEN, P and WALSH, JR; (1990) MOCVD LAYER GROWTH OF ZNSE AND ZNS/ZNSE MULTIPLE LAYERS USING NITROGEN CONTAINING ADDUCTS OF DIMETHYLZINC. : . |
| 1990 | Journal of Crystal Growth | THE GROWTH OF ZNSE/CDSE AND ZNS/CDS STRAINED LAYER SUPERLATTICES BY MOVPE PARBROOK, PJ and WRIGHT, PJ and COCKAYNE, B and CULLIS, AG and HENDERSON, B and ODONNELL, KP; (1990) THE GROWTH OF ZNSE/CDSE AND ZNS/CDS STRAINED LAYER SUPERLATTICES BY MOVPE. : . |
| 1990 | Journal of Crystal Growth | PHOTOLUMINESCENCE OF WIDE BANDGAP II-VI SUPERLATTICES ODONNELL, KP and PARBROOK, PJ and HENDERSON, B and TRAGERCOWAN, C and CHEN, X and YANG, F and HALSALL, MP and WRIGHT, PJ and COCKAYNE, B; (1990) PHOTOLUMINESCENCE OF WIDE BANDGAP II-VI SUPERLATTICES. : . |
| 1990 | Semiconductor Science and Technology | TIME-RESOLVED OPTICAL STUDIES OF PIEZOELECTRIC EFFECTS IN WURTZITE STRAINED-LAYER SUPERLATTICES CHEN, X and PARBROOK, PJ and TRAGERCOWAN, C and HENDERSON, B and ODONNELL, KP and HALSALL, MP and DAVIES, JJ and NICHOLLS, JE and WRIGHT, PJ and COCKAYNE, B; (1990) TIME-RESOLVED OPTICAL STUDIES OF PIEZOELECTRIC EFFECTS IN WURTZITE STRAINED-LAYER SUPERLATTICES. : . |
| 1989 | Institute of Physics Conference Series | THE CHARACTERIZATION OF CADMIUM-SULFIDE AND CADMIUM SELENIDE EPITAXIAL LAYERS GROWN BY MOCVD ON GALLIUM-ARSENIDE CULLIS, AG and WILLIAMS, GM and COCKAYNE, B and WRIGHT, PJ and SMITH, PW and PARBROOK, PJ and HALSALL, MP; (1989) THE CHARACTERIZATION OF CADMIUM-SULFIDE AND CADMIUM SELENIDE EPITAXIAL LAYERS GROWN BY MOCVD ON GALLIUM-ARSENIDE. : . |
| 1989 | Applied Physics Letters | STRUCTURE OF HEXAGONAL AND CUBIC CDS HETEROEPITAXIAL LAYERS ON GAAS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY CULLIS, AG and SMITH, PW and PARBROOK, PJ and COCKAYNE, B and WRIGHT, PJ and WILLIAMS, GM; (1989) STRUCTURE OF HEXAGONAL AND CUBIC CDS HETEROEPITAXIAL LAYERS ON GAAS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY. : . |
| 1989 | Journal of Crystal Growth | THE MOCVD GROWTH WITHOUT PREREACTION OF ZNSE AND ZNS LAYERS WRIGHT, PJ and PARBROOK, PJ and COCKAYNE, B and JONES, AC and ORRELL, ED and ODONNELL, KP and HENDERSON, B; (1989) THE MOCVD GROWTH WITHOUT PREREACTION OF ZNSE AND ZNS LAYERS. : . |
Reviews
| Year | Publication |
|---|---|
| 2021 | Micro-Light Emitting Diode: From Chips to Applications Parbrook, PJ;Corbett, B;Han, J;Seong, TY;Amano, H (2021) Micro-Light Emitting Diode: From Chips to Applications. : WILEY-V C H VERLAG GMBH. |
| 2017 | Doping of III-nitride materials Pampili P.;Parbrook P. (2017) Doping of III-nitride materials. : . |
Conference Publications
| Year | Publication |
|---|---|
| 2020 | EMAS 2019 WORKSHOP – 16TH EUROPEAN WORKSHOP ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS Trager-Cowan, C;Alasmari, A;Avis, W;Bruckbauer, J;Edwards, PR;Hourahine, B;Kraeusel, S;Kusch, G;Jablon, BM;Johnston, R;Martin, RW;Mcdermott, R;Naresh-Kumar, G;Nouf-Allehiani, M;Pascal, E;Thomson, D;Vespucci, S;Mingard, K;Parbrook, PJ;Smith, MD;Enslin, J;Mehnke, F;Kneissl, M;Kuhn, C;Wernicke, T;Knauer, A;Hagedorn, S;Walde, S;Weyers, M;Coulon, PM;Shields, PA;Zhang, Y;Jiu, L;Gong, Y;Smith, RM;Wang, T;Winkelmann, A (2020) EMAS 2019 WORKSHOP – 16TH EUROPEAN WORKSHOP ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS. : IOP PUBLISHING LTD. |
| 2019 | JAPANESE JOURNAL OF APPLIED PHYSICS Pampili, P;Zubialevich, VZ;Maaskant, P;Akhter, M;Corbett, B;Parbrook, PJ (2019) JAPANESE JOURNAL OF APPLIED PHYSICS. : IOP PUBLISHING LTD. |
| 2018 | JOURNAL OF CRYSTAL GROWTH Dinh, DV;Parbrook, PJ (2018) JOURNAL OF CRYSTAL GROWTH. : ELSEVIER SCIENCE BV. |
| 2018 | 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, M.; Sabui, G.; Shen, Z. J.; Parbrook, Peter J. (2018) 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). : . |
| 2018 | 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) Zubialevich, VZ;Pampili, P;McLaren, M;Arredondo-Arechavala, M;Sabui, G;Shen, ZJ;Parbrook, PJ (2018) 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). : IEEE. |
| 2017 | International Conference on Transparent Optical Networks Higgins L.;Marocico C.;Coindreau J.;Karanikolas V.;Bell A.;Gough J.;Murphy G.;Parbrook P.;Bradley A. (2017) International Conference on Transparent Optical Networks. : . |
| 2017 | ECS Transactions Buckley D.;McCormack R.;McNuIty D.;Zubialevich V.;Parbrook P.;O’Dwyer C. (2017) ECS Transactions. : . |
| 2017 | ECS Transactions Buckley D.;McNulty D.;Zubialevich V.;Parbrook P.;O’Dwyer C. (2017) ECS Transactions. : . |
| 2017 | International Symposium on Power Semiconductor Devices and ICs Sabui G.;Zubialevich V.;White M.;Pampili P.;Parbrook P.;McLaren M.;Arredondo-Arechavala M.;Shen Z. (2017) International Symposium on Power Semiconductor Devices and ICs. : . |
| 2017 | 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) Higgins, LJ;Marocico, CA;Coindreau, JG;Karanikolas, VD;Bell, AP;Gough, JJ;Murphy, GP;Parbrook, PJ;Bradley, AL (2017) 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON). : IEEE. |
| 2016 | SPIE OPTO, Photonics West B Corbett, Z Quan, DV Dinh, G Kozlowski, D O’Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) SPIE OPTO, Photonics West. : . |
| 2016 | Enhancing Forster nonradiative energy transfer via plasmon interaction Higgins, LJ,Zhang, X,Marocico, CA,Murphy, GP,Karanikolas, VK,Gun’ko, YK,Lesnyak, V,Gaponik, N,Susha, AS,Rogach, AL,Parbrook, PJ,Bradley, AL,Andrews, DL,Nunzi, JM,Ostendorf, A (2016) Enhancing Forster nonradiative energy transfer via plasmon interaction. : . |
| 2016 | Development of semipolar (11-22) LEDs on GaN templates Corbett, B,Quan, Z,Dinh, DV,Kozlowski, G,O’Mahony, D,Akhter, M,Schulz, S,Parbrook, P,Maaskant, P,Caliebe, M,Hocker, M,Thonke, K,Scholz, F,Pristovsek, M,Han, Y,Humphreys, CJ,Brunner, F,Weyers, M,Meyer, TM,Lymperakis, L,Jeon, H,Tu, LW,Krames, MR,Strassburg, M (2016) Development of semipolar (11-22) LEDs on GaN templates. : . |
| 2016 | IET OPTOELECTRONICS Quan, ZH;Justice, J;Mooney, MB;Gubbins, MA;Parbrook, PJ;Corbett, B (2016) IET OPTOELECTRONICS. : INST ENGINEERING TECHNOLOGY-IET. |
| 2015 | International Conference on Transparent Optical Networks Higgins L.;Karanikolas V.;Murphy G.;Zhang X.;Marocico C.;Parbrook P.;Bradley A. (2015) International Conference on Transparent Optical Networks. : . |
| 2015 | Summer Topicals Meeting Series (SUM), 2015 Parbrook, Peter J and Pampili, Pietro and Akhter, Mahbub and Eason, Cormac and Zubialevich, Vitaly Z and Maaskant, Pleun P and Quan, Zhiheng and O’Brien, Peter and Corbett, Brian (2015) Summer Topicals Meeting Series (SUM), 2015. : . |
| 2015 | Summer Topicals Meeting Series (SUM), 2015 Pampili, Pietro and Akhter, Mahbub and Eason, Cormac and Zubialevich, Vitaly Z and Maaskant, Pleun P and Quan, Zhiheng and O’Brien, Peter and Corbett, Brian and Parbrook, Peter J (2015) Summer Topicals Meeting Series (SUM), 2015. : . |
| 2015 | 2015 17TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) Higgins, LJ;Karanikolas, VD;Murphy, GP;Zhang, X;Marocico, CA;Parbrook, PJ;Bradley, AL (2015) 2015 17TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON). : IEEE. |
| 2015 | JOURNAL OF CRYSTAL GROWTH Dinh, DV;Conroy, M;Zubialevich, VZ;Petkov, N;Holmes, JD;Parbrook, PJ (2015) JOURNAL OF CRYSTAL GROWTH. : ELSEVIER SCIENCE BV. |
| 2015 | 2015 9th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2015 Higgins L.;Karanikolas V.;Marocico C.;Parbrook P.;Bradley A. (2015) 2015 9th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, METAMATERIALS 2015. : . |
| 2015 | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 Parbrook P.;Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O’Brien P.;Corbett B. (2015) 2015 IEEE Summer Topicals Meeting Series, SUM 2015. : . |
| 2015 | 2015 IEEE Summer Topicals Meeting Series, SUM 2015 Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O’Brien P.;Corbett B.;Parbrook P. (2015) 2015 IEEE Summer Topicals Meeting Series, SUM 2015. : . |
| 2015 | 9TH INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS (METAMATERIALS 2015) Higgins, LJ;Karanikolas, VD;Marocico, CA;Parbrook, PJ;Bradley, AL (2015) 9TH INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS (METAMATERIALS 2015). : IEEE. |
| 2014 | Microscopy and Microanalysis Trager-Cowan C.;Naresh-Kumar G.;Allehiani N.;Kraeusel S.;Hourahine B.;Vespucci S.;Thomson D.;Bruckbauer J.;Kusch G.;Edwards P.;Martin R.;Mauder C.;Day A.;Winkelmann A.;Vilalta-Clemente A.;Wilkinson A.;Parbrook P.;Kappers M.;Moram M.;Oliver R.;Humphreys C.;Shields P.;Le Boulbar E.;Maneuski D.;O’Shea V.;Mingard K. (2014) Microscopy and Microanalysis. : . |
| 2014 | Optics InfoBase Conference Papers Roycroft B.;Quan Z.;Presa S.;Dinh D.;Justice J.;Akhter M.;Maaskant P.;Parbrook P.;Corbett B. (2014) Optics InfoBase Conference Papers. : . |
| 2014 | 2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) O'Mahony, D;Parbrook, PJ;Corbett, B;Kovac, J;Kovac, J;Florovic, M;Vincze, A (2014) 2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM). : IEEE. |
| 2014 | Optics InfoBase Conference Papers Roycroft B.;Quan Z.;Presa S.;Dinh D.;Justice J.;Akhter M.;Maaskant P.;Parbrook P.;Corbett B. (2014) Optics InfoBase Conference Papers. : . |
| 2014 | Optics InfoBase Conference Papers Roycroft B.;Quan Z.;Presa S.;Dinh D.;Justice J.;Akhter M.;Maaskant P.;Parbrook P.;Corbett B. (2014) Optics InfoBase Conference Papers. : . |
| 2014 | Optics InfoBase Conference Papers Roycroft B.;Quan Z.;Presa S.;Dinh D.;Justice J.;Akhter M.;Maaskant P.;Parbrook P.;Corbett B. (2014) Optics InfoBase Conference Papers. : . |
| 2014 | Conference Proceedings – 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 O’Mahony D.;Parbrook P.;Corbett B.;Kovac J.;Florovic M.;Vincze A. (2014) Conference Proceedings – 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014. : . |
| 2013 | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 Kachkanov, V;Dolbnya, I;O'Donnell, K;Lorenz, K;Pereira, S;Watson, I;Sadler, T;Li, HN;Zubialevich, V;Parbrook, P (2013) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3. : WILEY-V C H VERLAG GMBH. |
| 2013 | ECS Transactions Conroy, M. A.; Petkov, N.; Li, H. N.; Sadler, T. C.; Zubialevich, V.; Holmes, J. D.; Parbrook, P. J. (2013) ECS Transactions. : . |
| 2013 | 223rd ECS Meeting (May 12-17, 2013) Conroy, Michele (2013) 223rd ECS Meeting (May 12-17, 2013). : . |
| 2013 | 223rd ECS Meeting (May 12-17, 2013) Conroy, Michele A. and Petkov, Nikolay and Li, Haoning and Sadler, Thomas C. and Zubialevich, Vitaly Z. and Holmes, Justin D. and Parbrook, Peter J. (2013) 223rd ECS Meeting (May 12-17, 2013). : . |
| 2013 | Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells Conroy, MA,Petkov, N,Li, HN,Sadler, TC,Zubialevich, V,Holmes, JD,Parbrook, PJ,Mi, Z,Horng, RH,Karim, Z,Stokes, EB,Bardwell, J,Hunter, GW,ODwyer, C (2013) Preparation of Substrates Intended for the Growth of Lower Threading Dislocation Densities within Nitride Based UV Multiple Quantum Wells. : . |
| 2012 | Built-in field control in nitride nanostructures operating in the UV Caro, MA,Schulz, S,Healy, SB,O’Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) Built-in field control in nitride nanostructures operating in the UV. : . |
| 2011 | UK Nitrides Consortium N. Cordero, D. O’Mahony, B. Corbett, P.J. Parbrook (2011) UK Nitrides Consortium. : . |
| 2010 | IWN2010 – Int. Workshop on Nitride Semiconductors N. Cordero, D. O’Mahony, B. Corbett, P.J. Parbrook (2010) IWN2010 – Int. Workshop on Nitride Semiconductors. : . |
| 2009 | JOURNAL OF CRYSTAL GROWTH Lee, KB;Parbrook, PJ;Wang, T;Bai, J;Ranalli, F;Airey, RJ;Hill, G (2009) JOURNAL OF CRYSTAL GROWTH. : ELSEVIER SCIENCE BV. |
| 2006 | Autumn Meeting of Materials Research Society 2005 Trager-Cowan, Carol and Sweeney, Francis and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A and Schmidt, N.H. and Parbrook, P.J. and Watson, IanTrager-Cowan, Carol and Sweeney, Francis and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A and Schmidt, N.H. and Parbrook, P.J. and Watson, Ian (2006) Autumn Meeting of Materials Research Society 2005. : . |
Other Journals
| Year | Journal | Publication |
|---|---|---|
| 2014 | Applied Physics Letters | Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN Kusch, Gunnar and Li, Haoning and Edwards, Paul R and Bruckbauer, Jochen and Sadler, Thomas C and Parbrook, Peter J and Martin, Robert W (2014) Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN. : . |
| 2014 | Journal of Materials Chemistry C | Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD Smith, Matthew David and Taylor, Elaine and Sadler, Thomas C and Zubialevich, Vitaly Z and Lorenz, Katharina and Li, Haoning N and O’Connell, John and Alves, Eduardo and Holmes, Justin and Martin, Robert and others (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. : . |
| 2013 | Applied Physics Letters | Fabrication of p-type porous GaN on silicon and epitaxial GaN Bilousov, OV and Geaney, H and Carvajal, JJ and Zubialevich, VZ and Parbrook, PJ and Gigu`ere, A and Drouin, D and D’iaz, F and Aguil’o (2013) Fabrication of p-type porous GaN on silicon and epitaxial GaN. : . |
| 2013 | Journal of Crystal Growth | AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers Li, Haoning and Sadler, Thomas C and Parbrook, Peter J (2013) AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers. : . |
| 2013 | Applied Physics Express | Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study Schulz, Stefan and Caro, Miguel A and Tan, Lay-Theng and Parbrook, Peter J and Martin, Robert W and O’Reilly, Eoin P (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . |
| 2012 | Physical review letters | Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope Naresh-Kumar, G and Hourahine, B and Edwards, PR and Day, AP and Winkelmann, A and Wilkinson, AJ and Parbrook, PJ and England, G and Trager-Cowan, C (2012) Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope. : . |
| 2012 | physica status solidi (a) | Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope Naresh-Kumar, G and Hourahine, Benjamin and Vilalta-Clemente, A and Ruterana, P and Gamarra, P and Lacam, C and Tordjman, M and di Forte-Poisson, MA and Parbrook, PJ and Day, AP and others (2012) Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. : . |
| 2012 | Microscopy and Microanalysis | Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films Trager-Cowan, C and Naresh-Kumar, G and Hourahine, B and Edwards, PR and Bruckbauer, J and Martin, RW and Mauder, C and Day, AP and England, G and Winkelmann, A and others (2012) Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films. : . |
| 2012 | physica status solidi (c) | Preface: Phys. Status Solidi C 3–4/2012 Parbrook, Peter J and Martin, Robert W and Halsall, Matthew P (2012) Preface: Phys. Status Solidi C 3–4/2012. : . |
| 2011 | Selected Topics in Quantum Electronics, IEEE Journal of | Light emitting and laser diodes in the ultraviolet Parbrook, Peter James and Wang, Tao (2011) Light emitting and laser diodes in the ultraviolet. : . |
| 2010 | Applied Physics Letters | Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy Gradkowski, K. and Sadler, T. C. and Mereni, L. O. and Dimastrodonato, V. and Parbrook, P. J. and Huyet, G. and Pelucchi, E. (2010) Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy. : . |
Conference Contributions
| Year | Publication |
|---|---|
| 2013 | UK Nitrides Consortium Winter Meeting 2013 N. Allehiani, N. Kumar, P. R. Edwards, B. Hourahine, H. Li, P. J. Parbrook, C. Trager-Cowan (2013) UK Nitrides Consortium Winter Meeting 2013. : . |
| 2013 | UK Nitrides Consortium Winter Meeting 2013 P J Parbrook (2013) UK Nitrides Consortium Winter Meeting 2013. : . |
| 2013 | UK Nitrides Consortium Winter Meeting 2013 M. Smith, L. Floyd, D. O’Mahony and P. J. Parbrook (2013) UK Nitrides Consortium Winter Meeting 2013. : . |
| 2013 | UK Nitrides Consortium Winter Meeting 2013 H N Li, T C Sadler, V Z Zubialevich, M Conroy, S Norouzian and P J Parbrook (2013) UK Nitrides Consortium Winter Meeting 2013. : . |
| 2013 | UK Nitrides Consortium Winter Meeting 2013 D. O’Mahony, M. Smith, T. Sadler, P. Maaskant, B. Corbett and P. J. Parbrook (2013) UK Nitrides Consortium Winter Meeting 2013. : . |
| 2012 | UK Nitrides Consortium Winter Meeting 2012 Haoning Li, Thomas Sadler and Peter Parbrook (2012) UK Nitrides Consortium Winter Meeting 2012. : . |
| 2012 | 6th Space Agency-MOD Workshop on Wide Bandgap Semiconductors and Components M D Smith, D O’Mahony, L Floyd, P J Parbrook (2012) 6th Space Agency-MOD Workshop on Wide Bandgap Semiconductors and Components. : . |
| 2012 | 7th International Conference on Nitride Semiconductors P J Parbrook (2012) 7th International Conference on Nitride Semiconductors. : . |
| 2012 | 4th International Symposium on Growth of III-Nitrides T C Sadler, H N Li, V Zubialevich, M Conroy, Z Quan, P J Parbrook (2012) 4th International Symposium on Growth of III-Nitrides. : . |
| 2012 | 7th International Workshop on Nitride Semiconductors Naresh Kumar Gunasekar, Ben Hourahine, Paul R Edwards, Jochen Bruckbauer, Robert W Martin, Christof Mauder, Austin Day, Aimo Winkelmann, Peter Parbrook, Angus J Wilkinson, Carol Trager Cowan (2012) 7th International Workshop on Nitride Semiconductors . : . |
| 2012 | 7th International Workshop on Nitride Semiconductors Thomas C Sadler, Haoning Li, Zhiheng Quan, Michele A Conroy, Vitaly Zubialevich, Justin D Holmes, and Peter J Parbrook (2012) 7th International Workshop on Nitride Semiconductors. : . |
| 2012 | 7th International Workshop on Nitride Semiconductors Thomas C Sadler, Elaine Taylor, Zhiheng Quan, Miguel Caro, Haoning Li, Michele A Conroy, Vitaly Zubialevich, Robert W Martin, Peter J Parbrook (2012) 7th International Workshop on Nitride Semiconductors. : . |
| 2012 | 9th International Symposium on Semiconductor Light Emitting Devices T C Sadler, H N Li, V Zubialevich, M Conroy, Z Quan, P J Parbrook (2012) 9th International Symposium on Semiconductor Light Emitting Devices. : . |
| 2012 | 4th International Symposium on Growth of III-Nitrides V Zubialevich, T C Sadler, H N Li, Z Quan, P J Parbrook (2012) 4th International Symposium on Growth of III-Nitrides. : . |
| 2012 | UK Nitrides Consortium Winter Meeting 2012 Thomas Sadler, Haoning Li and Peter Parbrook (2012) UK Nitrides Consortium Winter Meeting 2012. : . |
| 2012 | UK Nitrides Consortium Winter Meeting 2012 Matthew Smith, Thomas Sadler, Haoning Li and Peter Parbrook (2012) UK Nitrides Consortium Winter Meeting 2012. : . |
| 2012 | UK Nitrides Consortium Winter Meeting 2012 Donagh O‟Mahony, Peter Parbrook, Thomas Sadler and Brian Corbett (2012) UK Nitrides Consortium Winter Meeting 2012. : . |
| 2012 | Uk Nitrides Consortium Winter Meeting 2012 P J Parbrook (2012) Uk Nitrides Consortium Winter Meeting 2012. : . |
| 2012 | U K Semiconductors 2012 M Smith, T C Sadler, H N Li, V Z Zubialevich, P J Parbrook (2012) U K Semiconductors 2012. : . |
| 2012 | UK Semiconductors 2012 G Naresh-Kumar, B Hourahine, P R Edwards, J Brickbauer, R W Martin, C Mauder, A P Day, A Winkelmann, P J Parbrook, A J Wilkinson, C Trager-Cowan (2012) UK Semiconductors 2012. : . |
| 2012 | UK Semiconductors 2012 M A Conroy, T C Sadler, H N Li, V Z Zubialevich, J D Holmes, P J Parbrook (2012) UK Semiconductors 2012. : . |
| 2012 | UK Semiconductors 2012 H N Li, T C Sadler, Z Quan, V Z Zubialevich, M Conroy, P J Parbrook (2012) UK Semiconductors 2012. : . |
| 2012 | 6th Space Agency – MOD Workshop on Wideband Gap Semiconductors and Components M D Smith, T C Sadler, H N Li, V Z Zubialevich, P J Parbrook (2012) 6th Space Agency – MOD Workshop on Wideband Gap Semiconductors and Components. : . |
| 2011 | 9th International Conference on Nitride Semiconductors D. O’Mahony, N. Cordero, I. Mathews, B. Corbett, A. P. Morrison, P. Parbrook (2011) 9th International Conference on Nitride Semiconductors. : . |
| 2011 | 9th International Conference on Nitride Semiconductors P J Parbrook (2011) 9th International Conference on Nitride Semiconductors. : . |
| 2011 | 9th International Conference on Nitride Semiconductors P J Parbrook (2011) 9th International Conference on Nitride Semiconductors. : . |
| 2011 | My Fab Users Meeting 2011 P J Parbrook (2011) My Fab Users Meeting 2011. : . |
| 2010 | UK Nitrides Consortium Winter Conference 2010 Parbrook P.J. (2010) UK Nitrides Consortium Winter Conference 2010. : . |
| 2010 | 6th International Workshop on Nitride Semiconductors Donagh O’Mahony, Nicolas Cordero, Brian Corbett, Peter Parbrook (2010) 6th International Workshop on Nitride Semiconductors. : . |
| 2009 | Toshiba Fellowship Alumni Meeting 2009 P J Parbrook (2009) Toshiba Fellowship Alumni Meeting 2009. : . |
| 2005 | UK Nitrides Consortium Winter Meeting 2005 I H Brown, P Blood, P M Smowton, J D Thompson, A M Fox, S M Olaizola, P J Parbrook and W W Chow ; (2005) UK Nitrides Consortium Winter Meeting 2005. : . |
| 2005 | UK Nitrides Consortium Winter Meeting 2005 J J Toriz-Garcia, P J Parbrook, T Wang, J P R David, R J Airey and G Hill; (2005) UK Nitrides Consortium Winter Meeting 2005. : . |
| 2005 | UK Nitrides Consortium Winter Meeting 2005 F Ranalli, J Bai, T Wang, P J Parbrook, G Hill and A Tahraoui (2005) UK Nitrides Consortium Winter Meeting 2005. : . |
| 2005 | UK Nitrides Consortium Summer Meeting 2005 T Wang, P J Parbrook, F Ranalli, J Bai, K B Lee, A Tahraoui, R J Airey, G Hill and A G Cullis; (2005) UK Nitrides Consortium Summer Meeting 2005. : . |
| 2005 | UK Nitrides Consortium Summer Meeting 2005 D O Kundys, J-P R Wells, A Hashemizadeh, T Wang, P J Parbrook, M S Skolnick, A M Fox and D J Mowbray; (2005) UK Nitrides Consortium Summer Meeting 2005. : . |
| 2005 | 6th International Conference on Nitride Semiconductors A Hashemizadeh, J-P R Wells, J Brown, B D Jones, P Murzyn, T Wang, P J Parbrook, D J Mowbray, D O Kundys, A M Fox and M S Skolnick; (2005) 6th International Conference on Nitride Semiconductors. : . |
| 2005 | UK Nitrides Consortium Winter Meeting 2005 W S Tan, M W Low, R T Green, P J Parbrook, T Wang, P A Houston, M J Uren, R S Balmer, T Martin, P McGovern and P J Tasker; (2005) UK Nitrides Consortium Winter Meeting 2005 . : . |
| 2005 | UK Nitrides Consortium Winter Meeting 2005 C Trager-Cowan, F Sweeny, P Trimby, A Day, A Gholinia, N-H Schmidt, P J Parbrook, A J Wilkinson and I M Watson ; (2005) UK Nitrides Consortium Winter Meeting 2005. : . |
| 2004 | Conf. Lasers and Electro-Optics W H Fan, S M Olaizola, J-P R Wells, D J Mowbray, M S Skolnick, A M Fox, T Wang and P J Parbrook; (2004) Conf. Lasers and Electro-Optics . : . |
| 2004 | 5th International Conference on Low Dimensional Structures and Superlattices B Sherliker, M P Halsall, P J Parbrook and T Wang; (2004) 5th International Conference on Low Dimensional Structures and Superlattices . : . |
| 2004 | UK Nitrides Consortium Summer Meeting 2004 P J Parbrook, T Wang, F Ranalli, C N Harrison, J S Ng, J P R David, A Tahraoui, G Hill, W C Hung and A G Cullis; (2004) UK Nitrides Consortium Summer Meeting 2004. : . |
| 2004 | UK Nitrides Consortium Summer Meeting 2004 J Toriz, P J Parbrook, T Wang, J P R David, J S Ng, and R J Airey ; (2004) UK Nitrides Consortium Summer Meeting 2004. : . |
| 2004 | UK Nitrides Consortium Summer Meeting 2004 A Alyamani, D Sanvitto, T Wang, P J Parbrook and M S Skolnick; (2004) UK Nitrides Consortium Summer Meeting 2004. : . |
| 2004 | 3rd International Workshop on Nitride Semiconductors P J Parbrook, T Wang, M P Halsall, B Sherliker, P Harmer; (2004) 3rd International Workshop on Nitride Semiconductors . : . |
| 2004 | 3rd International Workshop on Nitride Semiconductors P J Parbrook, T Wang, R J Lynch, C N Harrison, D Sanvitto and M S Skolnick; (2004) 3rd International Workshop on Nitride Semiconductors . : . |
| 2004 | 3rd International Workshop on Nitride Semiconductors C Trager-Cowan, F Sweeney, P R Edwards, A J Wilkinson, R W Martin, P Trimby, N-H Schmidt, P J Parbrook and D Zubia; (2004) 3rd International Workshop on Nitride Semiconductors . : . |
| 2004 | International Conference on Physics Education and Frontier Research, 4th joint meeting of overseas Chinese physicists T Wang and P J Parbrook ; (2004) International Conference on Physics Education and Frontier Research, 4th joint meeting of overseas Chinese physicists. : . |
| 2004 | UK Nitrides Consortium Winter Meeting 2004 M P Halsall, B Sherliker, P Harrsion, V D Jovanovic, D Injin, Z Ikonic, P D Buckle, T Wang, M A Whitehead, and P J Parbrook; (2004) UK Nitrides Consortium Winter Meeting 2004. : . |
| 2004 | UK Nitrides Consortium Winter Meeting 2004 G N Aliev, S Zeng, D Wolverson, S J Bingham, J J Davies and P J Parbrook; (2004) UK Nitrides Consortium Winter Meeting 2004. : . |
| 2004 | UK Nitrides Consortium Winter Meeting 2004 P J Parbrook, T Wang, M S Skolnick, D Sanvitto and C N Harrison; (2004) UK Nitrides Consortium Winter Meeting 2004. : . |
| 2004 | UK Nitrides Consortium Winter Meeting 2004 M Lada, A G Cullis, P J Parbrook and M A Whitehead (2004) UK Nitrides Consortium Winter Meeting 2004 . : . |
Books
| Year | Publication |
|---|---|
| 1996 | Gaijin Scientist P J Parbrook; (1996) Gaijin Scientist. : British Chamber of Commerce in Japan . |
Book Chapters
| Year | Publication |
|---|---|
| 1993 | Optical properties of wide bandgap II-VI superlattices P J Parbrook and K P O’Donnell ; (1993) Optical properties of wide bandgap II-VI superlattices. : World Scientific. |
Professional Activities
Education
- [1987] University of Strathclyde – BSC
- [1991] University of Strathclyde – PHD
Employment
- [2009] UCC – Stokes Professor of Nitride Materials and Devices
- [1995] Department of Electronic and Electrical Engineering, University of Sheffield, UK – Lecturer, Senior Lecturer, Reader in Electronic Engineering
- [1991] Toshiba Central Research Laboratories, Toshiba Corporation, Kawasaki, Japan – Research Fellow
- [1987] Department of Physics, University of Strathclyde – Postgraduate Research Associate
Professional Associations
- [2007] Member
- [2010] Member
- [2002] Member
- [1999] Member (Reviewer, Panel Assessor, Interviewer)
- [1999] Member
- [2011] Conference Co-chair
- [2008] Reviewer
- [2003] Reviewer
- [2012] Member
- [2013] Programme Committee Member
- [2014] Programme Committee Member
- [2014] Progamme Committee Member
- [2012] Member
Other Professional Activities
-
Selected Research Grants, prior to coming to UCC.
• EPSRC (UK) Support for the EPSRC National Centre for III-V Technologies at Sheffield (2006-10) £4,631,647 Co-investigator, PI responsibility for III-N activity worth around £600,000
• Research Councils UK, Basic Technology: UV-LEDs for Microemitters (2004-8) £448,947, Principal Investigator at Sheffield (part of collaboration led by Strathclyde University.)
• QinetiQ Ltd: Characterisation of UV Materials for Light Emitting Diodes (2004-7), £19,500, Prinicipal Investigator
• EPSRC (UK) Support for EPSRC Central Facility for III-V Materials at Sheffield, (2002-6) £6,475,939. Co-investigator. PI responsibility for III-N activity worth around £600,000 - External Examiner for Many PhD and MSc students
- Asked on two occasions to act as expert witness in patent disputes relating to GaN based LED technology
- Authored Commerical Report on use of GaN as photocathode material (2002)
Journal Activities
- Applied Physics Letters – Referee
- J Appl Phys – Referee
- Opt Express – Referee
- Journal of Crystal Growth – Referee
Languages
- German
- French
- English
- Japanese
Committees
- [2011] Electrical and Electronic Engineering Strategy Committee, Examine overall Departmental Strategy.
- [2011] Electrical and Electronic Engineering Postgraduate Committee, Maintenance and Development of PG courses in Dept.
- [2012] Promotion to Professor (Scale 2) Board,
- [2013] School of Engineering Examinations Committee, Chair
- [2013] School of Engineering Postgraduate Committee,
Consultancy
- [2010] University of Strathclyde – External Examiner to Undergraduate Physics Progammes
- [2011] University of Strathclyde – External Examiner to Postgraduate Taught Masters Physics Related Programmes.
Honours and Awards
- [1991] – Toshiba Fellow