Lida Ansari

MicroNano Systems

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Biography

Dr Ansari is a senior staff research scientist at the Micro-Nano Systems (MNS) Centre, Tyndall National Institute, University College Cork (UCC), Ireland. She has received her PhD in Microelectronics from Tyndall, UCC in 2013 and awarded best PhD student BOC bursary for her PhD research work in 2012. Her doctoral research work was focused on atomic-scale simulation of nanoelectronic devices. She was then awarded Irish Research Council (IRC) fellowship on developing semimetal-based nanosensors.

Dr Ansari was on the Technical Program Committee and one of the local organisers of the IEEE NANO conference held at UCC in July 2018.

Dr. Ansari’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. She has gained a wealth of experience in nano-scale material simulations and design of electronic devices through collaborative projects with industry, and by delivering industry-level, high-standard and high-impact research. In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts.

Dr Ansari has had collaborative research projects or technical engagements with international industrial multinationals, including Intel and TSMC. She is the lead inventor of a US patent (US 10658460 B2) and an invention disclosure on “semimetal-based devices”. 

Over the past 10 years she has been a technical reviewer for peer-reviewed journals including ACS Applied Materials and Interfaces, IEEE Transactions on Electron Devices, Applied Physics Letters, and Journal of Applied Physics among others.

Her role involves:
– project management,
– budget management and purchasing,
– PhD student supervision and mentoring,
– dissemination of results in peer-reviewed articles.

Research Interests

Research Interests

Dr. Ansari’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT and spintronics applications, including simulation of emerging device concepts. Dr Ansari’s research focus is on addressing key technological challenges that are essential to the future evolution of Integrated Circuits (ICs) beyond Moore’s Law, needed for the future Trillion Sensor economy of the Internet of Things (IoT), and smart systems/cities. 

In particular, her research interest is low dimensional semiconductors and semimetals for beyond classical CMOS integration, surface effects in nanowires and other low-dimensional systems, atomic scale models for nanowire transistors and emerging device concepts.

Research Grants

Funder Start Date End Date Title Role
Irish Research Council 01-OCT-18 30-JAN-21 Ultra high sensitive nanowire sensors for biomedical applications by harnessing quantum confinement in semimetals

Research Collaborators

Company Country Name
Tyndall/UCC IRELAND Dr Farzan Gity
Tyndall/UCC IRELAND Prof Paul Hurley
Tyndall/UCC IRELAND Dr Ray Duffy
Forschungszentrum Juelich GERMANY Dr Gregor Mussler
Trinity College Dublin IRELAND Dr Niall McEvoy
CEA-LETI FRANCE Dr Thierry Baron
Newcastle University UNITED KINGDOM Dr Toby Hallam
Forschungszentrum Juelich GERMANY Dr Peter Schüffelgen
Universität der Bundeswehr München GERMANY Prof Georg S. Düsberg
CEA-LETI FRANCE Prof Jean-Pierre Colinge
Synopsys U.S.A. Dr Anders Blom
Georgia Tech (Georgia Institute of Technology) U.S.A. Dr Davoud Dastan

Publications

Peer Reviewed Journals

Year Journal Publication
2021 Npj 2d Materials And Applications Imaging and identification of point defects in PtTe2 (* joint first authorship)
K. Zhussupbekov*, L. Ansari*, J. B. McManus, A. Zhussupbekova, I. V. Shvets, G. S. Duesberg, P. K. Hurley, F. Gity, C. Ó Coileáin, and N. McEvoy (* joint first authorship) (2021) Imaging and identification of point defects in PtTe2 (* joint first authorship). : .
2021 Journal of Applied Physics Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics)
Farzan Gity; Fintan Meaney; Anya Curran; Paul Hurley; Stephen Fahy; Ray Duffy; and Lida Ansari (2021) Doping of Ultra-Thin Si Films: Combined First-Principles Calculations and Experimental Study (This paper has been featured on the cover of Journal of Applied Physics). : .
2020 Acs Applied Materials & Interfaces Insights into Multilevel Resistive Switching in Monolayer MoS2.
Bhattacharjee S;Caruso E;McEvoy N;Ó Coileáin C;O’Neill K;Ansari L;Duesberg GS;Nagle R;Cherkaoui K;Gity F;Hurley PK; (2020) Insights into Multilevel Resistive Switching in Monolayer MoS2.. : .
2019 Npj 2d Materials And Applications Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C. : .
2019 Journal of Applied Physics Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm
MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm. : .
2018 Microelectronic Engineering Metal-semimetal Schottky diode relying on quantum confinement
Gity, F.; Ansari, L.; König⁠, C.; Verni, G. A.; Holmes, J. D.; Long, B.; Lanius, M.; Schüffelgen, P.; Mussler, G.; Grützmacher, D.; Greer, J. C. (2018) Metal-semimetal Schottky diode relying on quantum confinement. : .
2018 Journal of Physics-Condensed Matter Properties of homo- and hetero-Schottky junctions from first principle calculations
Greer, JC;Blom, A;Ansari, L (2018) Properties of homo- and hetero-Schottky junctions from first principle calculations. : IOP PUBLISHING LTD.
2017 Applied Physics Letters Rhenium-doped MoS2 films
Hallam, Toby; Monaghan, Scott; Gity, Farzan; Ansari, Lida; Schmidt, Michael; Downing, Clive; Cullen, Conor P.; Nicolosi, Valeria; Hurley, Paul K.; Duesberg, Georg S. (2017) Rhenium-doped MoS2 films. : .
2017 Applied Physics Letters Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, James C. (2017) Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films. : .
2017 Journal of Physics: Condensed Matter Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires
Ansari, Lida; Gity, Farzan; Greer, James, C. (2017) Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires. : .
2016 Applied Physics Letters A sub k(B)T/q semimetal nanowire field effect transistor
Ansari, Lida; Fagas, Gíorgos; Gity, Farzan; Greer, James C. (2016) A sub k(B)T/q semimetal nanowire field effect transistor. : .
2014 Applied Physics Letters Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires
Ansari, L,Fagas, G,Greer, JC (2014) Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires. : .
2013 Journal of Applied Physics Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires
Sharma, D;Ansari, L;Feldman, B;Iakovidis, M;Greer, JC;Fagas, G (2013) Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires. : AMER INST PHYSICS.
2013 IEEE Transactions On Nanotechnology First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Ansari, L,Feldman, B,Fagas, G,Lacambra, CM,Haverty, MG,Kuhn, KJ,Shankar, S,Greer, JC (2013) First Principle-Based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors. : .
2012 Nano Letters A proposed confinement modulated gap nanowire transistor based on a metal (tin).
Ansari L, Fagas G, Colinge JP, Greer JC (2012) A proposed confinement modulated gap nanowire transistor based on a metal (tin).. : .
2010 Applied Physics Letters Simulation of junctionless Si nanowire transistors with 3 nm gate length
Ansari, L;Feldman, B;Fagas, G;Colinge, JP;Greer, JC (2010) Simulation of junctionless Si nanowire transistors with 3 nm gate length. : AMER INST PHYSICS.
2009 Fiber And Integrated Optics An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects
Zarifkar A.;Ansari L.;Moravvej-Farshi M. (2009) An equivalent circuit model for analyzing separate confinement heterostructure quantum well laser diodes including chirp and carrier transport effects. : .

Conference Publications

Year Publication
2018 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017. : .
2016 16th International Conference on Nanotechnology – IEEE NANO 2016
Ansari L.;Gity F.;Greer J. (2016) 16th International Conference on Nanotechnology – IEEE NANO 2016. : .
2015 IEEE-NANO 2015 – 15th International Conference on Nanotechnology
Ansari L.;Fagas G.;Greer J. (2015) IEEE-NANO 2015 – 15th International Conference on Nanotechnology. : .
2013 GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5
Ansari, L;Fagas, G;Greer, JC (2013) GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5. : ELECTROCHEMICAL SOC INC.
2012 SOLID-STATE ELECTRONICS
Ansari, L;Feldman, B;Fagas, G;Colinge, JP;Greer, JC (2012) SOLID-STATE ELECTRONICS. : PERGAMON-ELSEVIER SCIENCE LTD.
2009 ICICS 2009 – Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing
Gity F.;Ansari L. (2009) ICICS 2009 – Conference Proceedings of the 7th International Conference on Information, Communications and Signal Processing. : .
2008 Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers
Ansari L.;Gity F. (2008) Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. : .
2008 LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING
Gity, F;Moghaddasi, MN;Ansari, L (2008) LFNM 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON LASER AND FIBER-OPTICAL NETWORK MODELING. : IEEE.
2008 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008
Gity F.;Moghaddasi M.;Ansari L. (2008) 2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008. : .
2007 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007
Gity F.;Mirzakuchaki S.;Zarifkar A.;Ansari L. (2007) 4th IEEE and IFIP International Conference on Wireless and Optical Communications Networks, WOCN 2007. : .
2007 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Gity F.;Naser Moghaddasi M.;Ansari L. (2007) 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE. : .

Professional Activities

Honours and Awards

  • [2012] – BOC best PhD student bursary

Patents

  • [2020] US10658460B2 – Semi-metal tunnel field effect transistor

Committees

  • IEEE NANO 2018,
  • Irish Centre for High-End Computing Science Council ,
  • MSc and PhD theses committee,

Outreach Activities

  • Science week – Science festival Cork

Journal Activities

  • Acs Appl Mater Interfaces – Referee
  • IEEE Transactions on Electron Devices – Referee
  • Applied Physics Letters – Referee
  • J Appl Phys – Referee
  • Crystals – Guest Editor
  • Phys Chem Chem Phys – Referee
  • Acs Applied Nano Materials – Referee

Other Professional Activities

  • Supervision 
    Experienced in supervising/co-supervising (mentoring) two research assistances, two PhD students and one MSc student, as well as few intern/visiting students and researchers
  • Professional training
    • Professional Skills for Research Leaders (PSRL)
    • Teaching and Learning Skill for Researchers
    • Postgraduate Research Supervision Training – (recipient of digital badge from National Forum for the Enhancement of Teaching and Learning in Higher Education)
  • Completed full Epigeum training – Research Integrity and Ethics

Teaching Activities

Teaching Interests

“Nanoelectronics”
Semiconductor Materials and Devices

2006-2009
Lectured courses on:

  • physics of semiconductor devices, and
  • electronics I and II