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Leader in Integrated ICT Hardware & Systems

Ian Povey -

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  • MicroNano Systems
Dr Ian Povey is a Principal Researcher and the Head of the Advanced Materials and Surfaces Group at the Tyndall National Institute, University College Cork. He was awarded a B.Sc. (1989) in Chemistry (UMIST) and a  PhD for his work on Spectroscopic studies of semiconductor growth mechanisms (University of Manchester). Prior to his appointment at Tyndall in 2004, he held research positions at the Universities of Leicester, Zürich and Cambridge studying aspects of materials chemistry and spectroscopy. Ian’s  research group are exploring materials solutions to a wide range of problems including next generation logic switches, energy materials (solar cells, water splitting and scavenging), medical devices, sensors, and photonics. The research is focussed on the understanding of fundamental material’s properties, how these maybe controlled during growth processes and their optimization for the targeted application space.   Google Scholar

Current  research focuses on the chemical vapour and atomic layer deposition of materials  for a range of applications from electronic and medical devices to protective and photoactive coatings. The research focuses on instrument development and process control, materials properties, and elucidation of the mechanisms of growth. Particular areas of materials expertise include -

  • Development of atomic layer processes, growth (ALD) and etching (ALE).
    • 2D materials
    • Transparent conducting oxides
    • Ferroelectric and insulating dielectric materials.
    • Metals and contact materials
  • Chemical vapour deposition of multicomponent metal oxides.
  • Spectroscopic studies of  materials growth processes.

Research Grants

Funder Start Date End Date Title Role
Horizon 2020 01-FEB-16 31-JAN-19 EU H2020 - CHEOPS - Production technology to achieve low Cost and Highly Efficient phOtovoltaic Perovskite Solar cells Principal Investigator
Science Foundation of Ireland 01-OCT-15 28-FEB-16 TCD AMBER Infrastructure award (allocation to Tyndall) Principal Investigator
European Space Agency 31-MAR-10 31-MAR-15 Uniiform coatings on high aspect ratio structures
Science Foundation Ireland 02-JAN-17 31-DEC-18 AMBER TP32 ALD of 2D Materials
Enterprise Irl 01-MAR-18 30-JUN-19 MLD of lubricous coating on medical guidewires Principal Investigator
Industry/EI Projects 01-MAR-18 31-DEC-19 MLD of lubricous coating on medical guidewires Principal Investigator
Science Foundation of Ireland 01-DEC-18 31-MAY-23 Emerging Materials for Energy Storage and Environmental Research enable through Atomic Layer Deposition Principal Investigator
Industry 01-JUL-19 31-DEC-22 Wafer Services (FB) Principal Investigator
Horizon 2020 01-OCT-20 31-MAR-24 SYmbiosis for eNERGY harversting concepts for smart platforms on foils’ — ‘SYNERGY Principal Investigator
HEACOVID19 01-DEC-21 31-MAR-22 HEA Costed Extensions_2 Principal Investigator

Peer Reviewed Journals

YearJournalPublication
20212d MaterialsLarge-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality
Lin, Jun; Monaghan, Scott; Sakhuja, Neha; Gity, Farzan; Kumar Jha, Ravindra; Coleman, Emma M.; Connolly, James; Cullen, Conor P.; Walsh, Lee A.; Mannarino, Teresa (2021) Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality. : . [Details]
2021Waste ManagementRecycling of aluminium laminated pouches and Tetra Pak cartons by molten metal pyrolysis – Pilot-scale experiments and economic analysis
Riedewald, Frank; Wilson, Edward; Patel, Yunus; Vogt, Daniel; Povey, Ian; Barton, Killian; Lewis, Liam; Caris, Tom; Santos, Silvia; O’Mahoney, Maria; Sousa-Gallagher, Maria (2021) Recycling of aluminium laminated pouches and Tetra Pak cartons by molten metal pyrolysis – Pilot-scale experiments and economic analysis. : . [Details]
2021Applied Materials TodayStructural and electrical characterisation of PtS from H2S-converted Pt
Monaghan, Scott and Coleman, Emma M and Ansari, Lida and Lin, Jun and Buttimer, Alexandra and Coleman, Patrick A and Connolly, James and Povey, Ian M and Kelleher, Bryan and Coile'ain, Cormac 'O and others (2021) Structural and electrical characterisation of PtS from H2S-converted Pt. : .
2021CrystalsStructural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500c
Curran A.;Gocalinska A.;Pescaglini A.;Secco E.;Mura E.;Thomas K.;Nagle R.E.;Sheehan B.;Povey I.M.;Pelucchi E.;O’dwyer C.;Hurley P.K.;Gity F. (2021) Structural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500c. : . [Details]
2020Journal Of Electrochemical Science And EngineeringAtomic layer deposited V2O5 coatings: a promising cathode for Li-ion batteries
Pemble, M;Povey, I;Vernardou, D (2020) Atomic layer deposited V2O5 coatings: a promising cathode for Li-ion batteries. : INT ASSOC PHYSICAL CHEMISTS-IAPC. [Details]
2020Journal Of Physics-PhotonicsNext generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates
Gocalinska, Agnieszka;Pescaglini, Andrea;Secco, Eleonora;Mura, Enrica E.;Thomas, Kevin;Curran, Anya;Gity, Farzan;Nagle, Roger;Schmidt, Michael;Michalowski, Pawel P.;Hurley, Paul K.;Povey, Ian;Pelucchi, Emanuele; (2020) Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates. : . [Details]
2020Journal Of Physics-PhotonicsNext generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates
Gocalinska, A;Pescaglini, A;Secco, E;Mura, EE;Thomas, K;Curran, A;Gity, F;Nagle, R;Schmidt, M;Michalowski, PP;Hurley, PK;Povey, I;Pelucchi, E (2020) Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III-V metalorganic vapour phase epitaxy thin films on amorphous substrates. : IOP PUBLISHING LTD. [Details]
2020Physica E-Low-Dimensional Systems & NanostructuresMultifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector
Dragoman, Mircea; Aldrigo, Martino; Dragoman, Daniela; Povey, Ian M.; Iordanescu, Sergiu; Dinescu, Adrian; Di Donato, Andrea; Modreanu, Mircea (2020) Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector. : . [Details]
2019NanotechnologyMoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor
Dragoman, Mircea; Aldrigo, Martino; Connolly, James; Povey, Ian M.; Iordanescu, Sergiu; Dinescu, Adrian; Vasilache, Dan; Modreanu, Mircea (2019) MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor. : . [Details]
2019NanotechnologyReconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors
Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Dinescu, Adrian; Dragoman, Daniela (2019) Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors. : . [Details]
2018Journal of the Electrochemical SocietyZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations
Kegel, Jan; Povey, Ian M.; Pemble, Martyn E. (2018) ZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations. : . [Details]
2018IEEE Transactions On Electron DevicesHarvesting Electromagnetic Energy in the V-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal-Insulator-Metal Diode
Aldrigo, Martino; Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Iordanescu, Sergiu; Vasilache, Dan; Dinescu, Adrian; Shanawani, Mazen; Masotti, Diego (2018) Harvesting Electromagnetic Energy in the V-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal-Insulator-Metal Diode. : . [Details]
2018NanotechnologyWafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors
Dragoman, Mircea; Modreanu, Mircea; Povey, Ian M.; Dinescu, Adrian; Dragoman, Daniela; Di Donato, Andreea; Pavoni, Eleonora; Farina, Marco (2018) Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors. : . [Details]
2018Electronics Letters2.55 GHz miniaturised phased antenna array based on 7 nm-thick HfxZr1-xO2 ferroelectrics
Dragoman, M;Modreanu, M;Povey, I;Iordanescu, S;Aldrigo, M;Dinescu, A;Vasilache, D;Romanitan, C (2018) 2.55 GHz miniaturised phased antenna array based on 7 nm-thick HfxZr1-xO2 ferroelectrics. : INST ENGINEERING TECHNOLOGY-IET. [Details]
2018MRS AdvancesAtomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
McCarthy, Melissa M.; Walter, Arnaud; Moon, Soo-Jin; Noel, Nakita K.; O’Brien, Shane; Pemble, Martyn E.; Nicolay, Sylvain; Wenger, Bernard; Snaith, Henry J.; Povey, Ian M. (2018) Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices. : . [Details]
2018ACS Applied Energy MaterialsAluminum Interdiffusion into LiCoO2 Using Atomic Layer Deposition for High Rate Lithium Ion Batteries
Teranishi, Takashi; Yoshikawa, Yumi; Yoneda, Mika; Kishimoto, Akira; Halpin, Jennifer; O’Brien, Shane; Modreanu, Mircea; Povey, Ian M. (2018) Aluminum Interdiffusion into LiCoO2 Using Atomic Layer Deposition for High Rate Lithium Ion Batteries. : . [Details]
2018Acs Applied Materials & InterfacesEffect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays
Kegel, Jan; Zubialevich, Vitaly Z.; Schmidt, Michael; Povey, Ian M.; Pemble, Martyn E. (2018) Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays. : . [Details]
2018NanotechnologyElectromagnetic energy harvesting based on HfZrO tunneling junctions
Dragoman, Mircea L.; Modreanu, Mircea; Povey, Ian M.; Aldrigo, Martino; Dinescu, Adrian; Dragoman, Daniela (2018) Electromagnetic energy harvesting based on HfZrO tunneling junctions. : . [Details]
2017Applied Physics LettersThe impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors
Fu, Yen-Chun; Peralagu, Uthayasankaran; Millar, David A. J.; Lin, Jun; Povey, Ian; Li, Xu; Monaghan, Scott; Droopad, Ravi; Hurley, Paul K.; Thayne, Iain G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. : . [Details]
2017Applied Physics LettersInversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration
O'Connor, Éamon; Cherkaoui, Karim; Monaghan, Scott; Sheehan, Brendan; Povey, Ian M.; Hurley, Paul K. (2017) Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration. : . [Details]
2017Microelectronic EngineeringExamining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Povey, Ian M.; Sheehan, Brendan; Hurley, Paul K. (2017) Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing. : . [Details]
2017NanotechnologyVery large phase shift of microwave signals in a 6 nm Hf x Zr 1- x O 2 ferroelectric at ±3 V
Dragoman, Mircea; Modreanu, Mircea; Povey, Ian, M.; Iordanescu, Sergiu; Aldrigo, Martino; Romanitan, Cosmin; Vasilache, Dan; Dinescu, Adrian; Dragoman, Daniela (2017) Very large phase shift of microwave signals in a 6 nm Hf x Zr 1- x O 2 ferroelectric at ±3 V. : . [Details]
2017Applied Physics LettersThe impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors
Fu, Yen-Chun and Peralagu, Uthayasankaran and Millar, David AJ and Lin, Jun and Povey, Ian and Li, Xu and Monaghan, Scott and Droopad, Ravi and Hurley, Paul K and Thayne, Iain G (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors. : .
2017Microelectronic EngineeringExamining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and Sheehan, Brendan and Hurley, Paul K (2017) Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing. : .
2017Microelectronic EngineeringExamining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
Lin J.;Monaghan S.;Cherkaoui K.;Povey I.;Sheehan B.;Hurley P. (2017) Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing. : . [Details]
2017Applied Physics LettersInversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration
O'Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and Sheehan, Brendan and Povey, Ian M and Hurley, Paul K (2017) Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration. : .
2016Electrochimica ActaCapacitive behavior of Ag doped V2O5 grown by aerosol assisted chemical vapour deposition
Vernardou, D. and Marathianou, I. and Katsarakis, N. and Koudoumas, E. and Kazadojev, I. I. and O'Brien, S. and Pemble, M. E. and Povey, I. M. (2016) Capacitive behavior of Ag doped V2O5 grown by aerosol assisted chemical vapour deposition. : . [Details]
2016POLYMER CHEMISTRYThe role of local chemical hardness and van der Waals interactions in the anionic polymerization of alkyl cyanoacrylates
Ablat, Hayrensa and Povey, Ian and O'Kane, Ruairi and Cahill, Sabine and Elliott, Simon D. (2016) The role of local chemical hardness and van der Waals interactions in the anionic polymerization of alkyl cyanoacrylates. : . [Details]
2016NanolettersLithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers
Liu, N. and Gocalinska, A. and Justice, J. and Gity, F. and Povey, I. and McCarthy, B. and Pemble, M. and Pelucchi, E. and Wei, H. and Silien, C. and Xu, H. X. and Corbett, B. (2016) Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers. : .
2016Nano LettersLithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers
Liu, Ning; Gocalinska, Agnieszka M.; Justice, John; Gity, Farzan; Povey, Ian M.; McCarthy, Brendan; Pemble, Martyn E.; Pelucchi, Emanuele; Wei, Hong; Silien, Christophe; Xu, Hongxing; Corbett, Brian M. (2016) Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers. : . [Details]
2016Journal of Applied PhysicsBand offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
Chou, H. Y.; O'Connor, E.; O'Mahony, A.; Povey, Ian M.; Hurley P. K.; Dong, L.; Ye, P. D.; Afanas'ev, V. V.; Houssa, M.; Stesmans, A. (2016) Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3. : . [Details]
2016NanolettersLithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers
Liu, N.;Gocalinska, A.;Justice, J.;Gity, F.;Povey, I.;McCarthy, B.;Pemble, M.;Pelucchi, E.;Wei, H.;Silien, C.;Xu, H. X.;Corbett, B.; (2016) Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers. : . [Details]
2016AIP AdvancesBack-gated Nb-doped MoS2 junctionless field-effect-transistors
Mirabelli, Gioele and Schmidt, Michael and Sheehan, Brendan and Cherkaoui, Karim and Monaghan, Scott and Povey, Ian and McCarthy, Melissa and Bell, Alan P and Nagle, Roger and Crupi, Felice and others (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : .
2016Journal of Applied PhysicsAir sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Mirabelli, Gioele and McGeough, Conor and Schmidt, Michael and McCarthy, Eoin K and Monaghan, Scott and Povey, Ian M and McCarthy, Melissa and Gity, Farzan and Nagle, Roger and Hughes, Greg and others (2016) Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2. : .
2016AIP AdvancesBack-gated Nb-doped MoS2 junctionless field-effect-transistors
Mirabelli, G. and Schmidt, M. and Sheehan, B. and Cherkaoui, K. and Monaghan, S. and Povey, I. and McCarthy, M. and Bell, A.P. and Nagle, R. and Crupi, F. and Hurley, P.K. and Duffy, R. (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : . [Details]
2015Journal of Vacuum Science Technology A: Vacuums, SurfacHigh aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition
Burke, Micheal, Blake, Alan, Djara, Vladimir, O'Connell, Dan, Povey, Ian M, Cherkaoui, Karim, Monaghan, Scott, Scully, Jim, Murphy, Richard and Hurley, Paul K, Pemble, Martyn E and others (2015) High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition. : .
2015Journal of Vacuum Science & Technology AHigh aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
Burke, M., Blake, A., Djara, V., O'Connell, D., Povey, I.M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P.K., Pemble, M.E., Quinn, A.J. (2015) High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition. : . [Details]
2015Microelectronic EngineeringEffect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS capacitors
O'Connor;Cherkaoui K.;Monaghan S.;Sheehan B.;Povey I.;Hurley P. (2015) Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS capacitors. : . [Details]
2015Microelectronic EngineeringA study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system
Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian and O’Connor, 'Eamon and Sheehan, Brendan and Hurley, Paul (2015) A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system. : .
2015Microelectronic EngineeringA study of capacitance-voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system
Lin, J;Monaghan, S;Cherkaoui, K;Povey, I;O'Connor, E;Sheehan, B;Hurley, P (2015) A study of capacitance-voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system. : ELSEVIER SCIENCE BV. [Details]
2014Physica Status Solidi-Rapid Research LettersJunctionless nanowire Transistor fabricated with high mobility Ge channel
Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R. (2014) Junctionless nanowire Transistor fabricated with high mobility Ge channel. : . [Details]
2014Journal Of Vacuum Science & Technology A: Vacuum, Surfaces, And FilmsHigh aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition
Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J. (2014) High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition. : . [Details]
2014Physica Status Solidi - Rapid Research LettersJunctionless nanowire transistor fabricated with high mobility Ge channel
Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O'Connell, D., Holmes, J.D., Duffy, R. (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : .
2014Journal of Materials Chemistry CAtomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide
Hagen, Dirk J and Povey, Ian M and Rushworth, Simon and Wrench, Jacqueline S and Keeney, Lynette and Schmidt, Michael and Petkov, Nikolay and Barry, Se'an T and Coyle, Jason P and Pemble, Martyn E (2014) Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide. : . [Details]
2014Applied Physics LettersDiffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
Cabrera, W and Brennan, B and Dong, H and O'Regan, TP and Povey, IM and Monaghan, S and O'Connor, 'E and Hurley, PK and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : .
2014Journal of Applied PhysicsA combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0. 53Ga0. 47As capacitor structures
Lin, Jun and Walsh, Lee and Hughes, Greg and Woicik, Joseph C and Povey, Ian M and O'Regan, Terrance P and Hurley, Paul K (2014) A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0. 53Ga0. 47As capacitor structures. : .
2014Journal of Physical Chemistry CSurface Oxide Characterization and Interface Evolution in Atomic Layer Deposition of Al2O3 on InP (100) Studied by in Situ Infrared Spectroscopy
Cabrera, Wilfredo and Halls, Mathew D and Povey, Ian M and Chabal, Yves J (2014) Surface Oxide Characterization and Interface Evolution in Atomic Layer Deposition of Al2O3 on InP (100) Studied by in Situ Infrared Spectroscopy. : .
2014Journal of Vacuum Science & Technology ALow sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
Burke, Micheal and Blake, Alan and Povey, Ian M and Schmidt, Michael and Petkov, Nikolay and Carolan, Patrick and Quinn, Aidan J (2014) Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology. : .
2014The Journal of Physical Chemistry CRole of Interfacial Aluminum Silicate and Silicon as Barrier Layers for Atomic Layer Deposition of Al2O3 Films on Chemically Cleaned InP (100) Surfaces
Cabrera, Wilfredo and Halls, Mathew D and Povey, Ian M and Chabal, Yves J (2014) Role of Interfacial Aluminum Silicate and Silicon as Barrier Layers for Atomic Layer Deposition of Al2O3 Films on Chemically Cleaned InP (100) Surfaces. : .
2014Journal of Materials Chemistry CA bottom-up fabrication method for the production of visible light active photonic crystals
Padmanabhan, SC;Linehan, K;O'Brien, S;Kassim, S;Doyle, H;Povey, IM;Schmidt, M;Pemble, ME (2014) A bottom-up fabrication method for the production of visible light active photonic crystals. : ROYAL SOC CHEMISTRY. [Details]
2014Applied Physics LettersDiffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
Cabrera, W and Brennan, B and Dong, H and O'Regan, Terrance P and Povey, Ian M and Monaghan, Scott and O'Connor, 'Eamon and Hurley, Paul K and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : .
2014IEEE Transactions on Electron DevicesCapacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions
Monaghan, Scott and O’Connor, 'Eamon and Rios, Rafael and Ferdousi, Fahmida and Floyd, Liam and Ryan, Eimear and Cherkaoui, Karim and Povey, Ian M and Kuhn, Kelin J and Hurley, Paul K (2014) Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions. : .
2014Applied Physics LettersDiffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing. : . [Details]
2013Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : .
2013Journal of Vacuum Science & Technology BNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E;Jimenez, D;Sune, J;O'Connor, E;Monaghan, S;Povey, I;Cherkaoui, K;Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : A V S AMER INST PHYSICS. [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013Microelectronic EngineeringElectrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : . [Details]
2013The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Paul K. Hurley, Éamon O’Connor, Vladimir Djara, Scott Monaghan, Ian M. Povey, Rathnait D. Long, Brendan Sheehan, Jun Lin, Paul C. McIntyre, Barry Brennan, Robert M. Wallace, Martyn E. Pemble, and Karim Cherkaoui (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013IEEE Transactions on Device and Materials ReliabilityThe Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Paul K. Hurley, Éamon O’Connor, Vladimir Djara, Scott Monaghan, Ian M. Povey, Rathnait D. Long, Brendan Sheehan, Jun Lin, Paul C. McIntyre, Barry Brennan, Robert M. Wallace, Martyn E. Pemble, and Karim Cherkaoui (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013IEEE Transactions on Device and Materials ReliabilityThe Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013Physica Status Solidi A-Applications and Materials ScienceSilicon nanocrystals: Novel synthesis routes for photovoltaic applications
Perraud, S,Quesnel, E,Parola, S,Barbe, J,Muffato, V,Faucherand, P,Morin, C,Jarolimek, K,Van Swaaij, RACMM,Zeman, M,Richards, S,Kingsley, A,Doyle, H,Linehan, K,O'Brien, S,Povey, IM,Pemble, ME,Xie, L,Leifer, K,Makasheva, K,Despax, B (2013) Silicon nanocrystals: Novel synthesis routes for photovoltaic applications. : . [Details]
2013Solid-State ElectronicsInvestigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : . [Details]
2013physica status solidi (a)Silicon nanocrystals: Novel synthesis routes for photovoltaic applications
Perraud, Simon and Quesnel, Etienne and Parola, St'ephanie and Barb'e (2013) Silicon nanocrystals: Novel synthesis routes for photovoltaic applications. : .
2013Surface & Coatings TechnologyPlasma enhanced atomic layer deposition of copper: A comparison of precursors
Hagen, DJ,Connolly, J,Nagle, R,Povey, IM,Rushworth, S,Carolan, P,Ma, P,Pemble, ME (2013) Plasma enhanced atomic layer deposition of copper: A comparison of precursors. : . [Details]
2013Phys. Status Solidi AAdvanced Concepts for Silicon Based Photovoltaics
Faucherand, Pascal and Morin, Christine and Jarolimek, Karol and Van Swaaij, Ren'e ACMM and Zeman, Miro and Richards, Stephen and Kingsley, Andrew and Doyle, Hugh and Linehan, Keith and O’Brien, Shane and others (2013) Advanced Concepts for Silicon Based Photovoltaics. : .
2013Surface and Coatings TechnologyPlasma enhanced atomic layer deposition of copper: A comparison of precursors
Hagen, DJ and Connolly, J and Nagle, R and Povey, IM and Rushworth, S and Carolan, P and Ma, P and Pemble, ME (2013) Plasma enhanced atomic layer deposition of copper: A comparison of precursors. : .
2013Journal of Vacuum Science & Technology BNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, Enrique and Jim'enez, David and Su~n'e (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : .
2013Journal of Vacuum Science & Technology BEffects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors
Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and Sheehan, Brendan J and Cherkaoui, Karim and Hutchinson, Barry JA and Hurley, Paul K and Ferdousi, Fahmida and Rios, Rafael and Kuhn, Kelin J and others (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors. : .
2013Solid-State ElectronicsInvestigation of electron mobility in surface-channel Al< sub> 2 O< sub> 3/In< sub> 0.53 Ga< sub> 0.47 As MOSFETs
Negara, MA and Djara, V and O’Regan, TP and Cherkaoui, K and Burke, M and Gomeniuk, YY and Schmidt, M and O’Connor, E and Povey, IM and Quinn, AJ and others (2013) Investigation of electron mobility in surface-channel Al< sub> 2 O< sub> 3/In< sub> 0.53 Ga< sub> 0.47 As MOSFETs. : .
2013Journal of Vacuum Science & Technology BEffects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors
Monaghan, S;O'Connor, E;Povey, IM;Sheehan, BJ;Cherkaoui, K;Hutchinson, BJA;Hurley, PK;Ferdousi, F;Rios, R;Kuhn, KJ;Rahman, A (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors. : A V S AMER INST PHYSICS. [Details]
2013Microelectronic EngineeringElectrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V;O'Regan, TP;Cherkaoui, K;Schmidt, M;Monaghan, S;O'Connor, E;Povey, IM;O'Connell, D;Pemble, ME;Hurley, PK (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : ELSEVIER SCIENCE BV. [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
Lin, Jun and Gomeniuk, Yuri Y and Monaghan, Scott and Povey, Ian M and Cherkaoui, Karim and O'Connor, 'Eamon and Power, Maire and Hurley, Paul K (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors. : .
2013Physica Status Solidi A-Applications and Materials ScienceSilicon nanocrystals: Novel synthesis routes for photovoltaic applications
Perraud, S.,Quesnel, E.,Parola, S.,Barbe, J.,Muffato, V.,Faucherand, P.,Morin, C.,Jarolimek, K.,Van Swaaij, Racmm,Zeman, M.,Richards, S.,Kingsley, A.,Doyle, H.,Linehan, K.,O'Brien, S.,Povey, I. M.,Pemble, M. E.,Xie, L.,Leifer, K.,Makasheva, K.,Despax, B. (2013) Silicon nanocrystals: Novel synthesis routes for photovoltaic applications. : .
2012Advanced Functional MaterialsNon-Covalent Functionalization of Graphene Using Self-Assembly of Alkane-Amines
Long, B,Manning, M,Burke, M,Szafranek, BN,Visimberga, G,Thompson, D,Greer, JC,Povey, IM,MacHale, J,Lejosne, G,Neumaier, D,Quinn, AJ (2012) Non-Covalent Functionalization of Graphene Using Self-Assembly of Alkane-Amines. : . [Details]
2012Journal of Applied PhysicsObservation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
O'Connor, E;Cherkaoui, K;Monaghan, S;O'Connell, D;Povey, I;Casey, P;Newcomb, SB;Gomeniuk, YY;Provenzano, G;Crupi, F;Hughes, G;Hurley, PK (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : AMER INST PHYSICS. [Details]
2012IEEE Transactions On Electron DevicesImpact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : .
2012Electrochemical Society TransactionsCan metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : . [Details]
2012Electron Devices, IEEE Transactions onImpact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric. : .
2012IEEE Transactions on Electron DevicesImpact of Forming Gas Annealing on the Performance of Surface-Channel hbox In 0. 53 hbox Ga 0. 47 hbox As MOSFETs With an ALD hbox Al 2 hbox O 3 Gate Dielectric
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) Impact of Forming Gas Annealing on the Performance of Surface-Channel hbox In 0. 53 hbox Ga 0. 47 hbox As MOSFETs With an ALD hbox Al 2 hbox O 3 Gate Dielectric. : .
2012Advanced Functional MaterialsNon-Covalent Functionalization of Graphene Using Self-Assembly of Alkane-Amines
Long, Brenda and Manning, Mary and Burke, Micheal and Szafranek, Bartholomaeus N and Visimberga, Giuseppe and Thompson, Damien and Greer, James C and Povey, Ian M and MacHale, John and Lejosne, Guaylord and others (2012) Non-Covalent Functionalization of Graphene Using Self-Assembly of Alkane-Amines. : .
2012Electronics lettersScalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity
Monaghan, S and Povey, IM (2012) Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity. : .
2012Electronics LettersORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity
Monaghan, S and Povey, IM (2012) ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity. : .
2012ECS Transactions(Invited) Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET Characteristics
Cherkaoui, Karim and Djara, Vladimir and O'Connor, 'Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) (Invited) Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET Characteristics. : .
2012Journal of Applied PhysicsObservation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
O’Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and O’Connell, D and Povey, I and Casey, P and Newcomb, Simon B and Gomeniuk, Yuri Y and Provenzano, G and Crupi, Felice and others (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : .
2012ECS TransactionsCan Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET Characteristics
Cherkaoui, Karim and Djara, Vladimir and O'Connor, 'Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET Characteristics. : .
2012IEEE transactions on electron devicesImpact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric. : .
2012Electronics LettersScalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity
Monaghan, S,Povey, IM (2012) Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity. : . [Details]
2011Journal of Photochemistry and Photobiology A, ChemistryThe Characterisation of Aerosol Assisted CVD Conducting, Photocatalytic Indium Doped Zinc Oxide Films
Mark G Nolan, Jeff A Hamilton, Shane O'Brien, Giuseppe Bruno, Luis Pereira, Elvira Fortunato, Rodrigo Martins, Ian M Povey, Martyn E Pemble; (2011) The Characterisation of Aerosol Assisted CVD Conducting, Photocatalytic Indium Doped Zinc Oxide Films. : .
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment
O’Connor, 'Eamon and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and Hurley, Paul K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment. : .
2011Chemical Vapor DepositionNucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition
Salaun, A,Newcomb, SB,Povey, IM,Salaun, M,Keeney, L,O'Mahony, A,Pemble, ME; (2011) Nucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition. : . [Details]
2011EnergyA study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition
Vernardou, D,Paterakis, P,Drosos, H,Spanakis, E,Povey, IM,Pemble, ME,Koudoumas, E,Katsarakis, N; (2011) A study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition. : . [Details]
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details]
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : . [Details]
2011Solar Energy Materials And Solar CellsA study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition
Vernardou, D.,Paterakis, P.,Drosos, H.,Spanakis, E.,Povey, I. M.,Pemble, M. E.,Koudoumas, E.,Katsarakis, N. (2011) A study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition. : .
2011Thin Solid FilmsThe effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method
O'Brien, S,Copuroglu, M,Tassie, P,Nolan, MG,Hamilton, JA,Povey, I,Pereira, L,Martins, R,Fortunato, E,Pemble, ME (2011) The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method. : . [Details]
2011Journal of nanoscience and nanotechnologyThe Effects of Using ALD-Grown ZnO Buffer Layers on the Properties of Indium Tin Oxide Grown by Chemical Solution Deposition
O'brien, Shane and Povey, Ian M and Hamilton, Jeff A and Kingsley, Andrew and Thony, Philippe and Perraud, Simon and Pemble, Martyn E (2011) The Effects of Using ALD-Grown ZnO Buffer Layers on the Properties of Indium Tin Oxide Grown by Chemical Solution Deposition. : .
2011Thin Solid FilmsThe effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method
O'Brien, S.,Copuroglu, M.,Tassie, P.,Nolan, M. G.,Hamilton, J. A.,Povey, I.,Pereira, L.,Martins, R.,Fortunato, E.,Pemble, M. E. (2011) The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method. : .
2011Journal of Nanoscience and NanotechnologyThe Effects of Using ALD-Grown ZnO Buffer Layers on the Properties of Indium Tin Oxide Grown by Chemical Solution Deposition
O'Brien, S.,Povey, I. M.,Hamilton, J. A.,Kingsley, A.,Thony, P.,Perraud, S.,Pemble, M. E. (2011) The Effects of Using ALD-Grown ZnO Buffer Layers on the Properties of Indium Tin Oxide Grown by Chemical Solution Deposition. : .
2011Microelectronic EngineeringThe structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : .
2011Thin Solid FilmsThe incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition (vol 518, pg 3921, 2010)
Salaun, A.,Hamilton, J. A.,Iacopino, D.,Newcomb, S. B.,Nolan, M. G.,Padmanabhan, S. C.,Povey, I. M.,Salaun, M.,Pemble, M. E. (2011) The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition (vol 518, pg 3921, 2010). : .
2011Solar Energy Materials And Solar CellsA study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition
Vernardou, D and Paterakis, P and Drosos, H and Spanakis, E and Povey, IM and Pemble, ME and Koudoumas, E and Katsarakis, N (2011) A study of the electrochemical performance of vanadium oxide thin films grown by atmospheric pressure chemical vapour deposition. : .
2011Journal of Photochemistry and Photobiology A, ChemistryThe characterisation of aerosol assisted CVD conducting, photocatalytic indium doped zinc oxide films
Nolan, MG and Hamilton, JA and O’Brien, S and Bruno, G and Pereira, L and Fortunato, E and Martins, R and Povey, IM and Pemble, ME (2011) The characterisation of aerosol assisted CVD conducting, photocatalytic indium doped zinc oxide films. : .
2011Microelectronic EngineeringThe structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system
Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others (2011) The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system. : .
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S and O’Mahony, A and Cherkaoui, K and O’Connor, 'E and Povey, IM and Nolan, MG and O’Connell, D and Pemble, ME and Hurley, PK and Provenzano, G and others (2011) Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : .
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment
O'Connor, E;Monaghan, S;Cherkaoui, K;Povey, IM;Hurley, PK (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment. : AMER INST PHYSICS. [Details]
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M. and Monaghan, S. and Povey, I.M. and Cherkaoui, K. and Hurley, P.K. and Androulidaki, M. (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details]
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . [Details]
2010Thin Solid FilmsThe incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition
Salaun, A; Hamilton, JA; Iacopino, D; Newcomb, SB; Nolan, MG; Padmanabhan, SC; Povey, IM; Salaun, M; Pemble, ME; (2010) The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition. : .
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer
O’Mahony, Aileen and Monaghan, Scott and Provenzano, G and Povey, Ian M and Nolan, MG and O’Connor, 'Eamon and Cherkaoui, Karim and Newcomb, Simon B and Crupi, Felice and Hurley, Paul K and others (2010) Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer. : .
2010Advanced MaterialsThe Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals
Bardosova, Maria; Pemble, Martyn E; Povey, Ian M; Tredgold, Richard H; (2010) The Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals. : .
2010Electrochemical Society TransactionsStructural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
Aileen O'Mahony, Scott Monaghan, Rosario Chiodo, Ian Povey, Karim Cherkaoui, Roger Nagle, Eamon O'Connor, Rathnait Long, Vladimir Djara, Dan O'Connell, Felice Crupi, Martyn Pemble, and Paul K. Hurley; (2010) Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks. : . [Details]
2010Electrochemical Society TransactionsEquivalent Oxide Thickness Correction in the High-k/In[sub 0.53]Ga[sub 0.47]As/InP System
Paul K. Hurley; Rathnait Long; Terrance O'Regan; Eamon O'Connor; Scott Monaghan; Vladimir Djara; M. Adi Negara; Aileen O'Mahony; Ian Povey; Alan Blake; Roger Nagle; Dan O'Connell; Martyn Pemble; Karim Cherkaoui; (2010) Equivalent Oxide Thickness Correction in the High-k/In[sub 0.53]Ga[sub 0.47]As/InP System. : . [Details]
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2010Thin Solid FilmsZinc oxide thin films: Characterization and potential applications
O'Brien, S.,Nolan, M. G.,Copuroglu, M.,Hamilton, J. A.,Povey, I.,Pereira, L.,Martins, R.,Fortunato, E.,Pemble, M. (2010) Zinc oxide thin films: Characterization and potential applications. : .
2010Advanced MaterialsThe Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres
Bardosova, M.,Pemble, M. E.,Povey, I. M.,Tredgold, R. H. (2010) The Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres. : .
2010Journal of Molecular StructureInfrared and near-infrared spectroscopic probing of atomic layer deposition processes
O'Mahony, A.,Pemble, M. E.,Povey, I. M. (2010) Infrared and near-infrared spectroscopic probing of atomic layer deposition processes. : .
2010Advanced Functional MaterialsEngineered Light Scattering in Colloidal Photonic Heterocrystals
Ding, B. Y.,Bardosova, M.,Povey, I.,Pemble, M. E.,Romanov, S. G. (2010) Engineered Light Scattering in Colloidal Photonic Heterocrystals. : .
2010Advanced Functional MaterialsEngineered Light Scattering in Colloidal Photonic Heterocrystals
Ding, BY,Bardosova, M,Povey, I,Pemble, ME,Romanov, SG (2010) Engineered Light Scattering in Colloidal Photonic Heterocrystals. : . [Details]
2010Advanced MaterialsThe Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres
Bardosova, M,Pemble, ME,Povey, IM,Tredgold, RH (2010) The Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres. : . [Details]
2010Thin Solid FilmsZinc oxide thin films: Characterization and potential applications
O'Brien, S,Nolan, MG,Copuroglu, M,Hamilton, JA,Povey, I,Pereira, L,Martins, R,Fortunato, E,Pemble, M (2010) Zinc oxide thin films: Characterization and potential applications. : . [Details]
2010ECS TransactionsStructural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and O'Connell, Dan and others (2010) Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks. : .
2010Advanced Functional MaterialsEngineered light scattering in colloidal photonic heterocrystals
Ding, Boyang and Bardosova, Maria and Povey, Ian and Pemble, Martyn E and Romanov, Sergei G (2010) Engineered light scattering in colloidal photonic heterocrystals. : .
2010ECS Transactions(Invited) Equivalent Oxide Thickness Correction in the High-k/In0. 53Ga0. 47As/InP System
Hurley, Paul K and Long, Rathnait and O'Regan, Terrance and O'Connor, Eamon and Monaghan, Scott and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) (Invited) Equivalent Oxide Thickness Correction in the High-k/In0. 53Ga0. 47As/InP System. : .
2010Advanced Functional MaterialsENGINEERED LIGHT SCATTERING IN COLLOIDAL PHOTONIC HETEROCRYSTALS
Romanov, SG and Ding, B and Bardosova, M and Povey, L and Pemble, ME (2010) ENGINEERED LIGHT SCATTERING IN COLLOIDAL PHOTONIC HETEROCRYSTALS. : .
2010Thin Solid FilmsThe incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition
Salaun, A;Hamilton, JA;Iacopino, D;Newcomb, SB;Nolan, MG;Padmanabhan, SC;Povey, IM;Salaun, M;Pemble, ME (2010) The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition. : ELSEVIER SCIENCE SA. [Details]
2010SmallGallium Arsenide Infiltration of Nanoporous Multi layers: A Route to High-Dielectric-Contrast One-Dimensional Photonic Crystals
Sanchez-Sobrado, O;Thomas, K;Povey, I;Pemble, ME;Miguez, H (2010) Gallium Arsenide Infiltration of Nanoporous Multi layers: A Route to High-Dielectric-Contrast One-Dimensional Photonic Crystals. : WILEY-V C H VERLAG GMBH. [Details]
2010ECS TransactionsEquivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system
Hurley, Paul K and Long, Rathnait and O'Regan, Terrance and O'Connor, Eamon and Monaghan, Scott and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system. : .
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2009Journal of Colloid and Interface ScienceLangmuir-Blodgett Assembly of Colloidal Photonic Crystals Using Silica Particles Prepared Without The Use of Surfactant Molecules
Bardosova, M, Dillon, FC, Pemble, ME, Povey, IM, Tredgold, RH; (2009) Langmuir-Blodgett Assembly of Colloidal Photonic Crystals Using Silica Particles Prepared Without The Use of Surfactant Molecules. : . [Details]
2009Applied Physics LettersTemperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : . [Details]
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : . [Details]
2009Journal of Colloid and Interface ScienceLangmuir-Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules
Bardosova, M,Dillon, FC,Pemble, ME,Povey, IM,Tredgold, RH; (2009) Langmuir-Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules. : . [Details]
2009Applied Physics LettersTemperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : . [Details]
2009Electrochemical Society TransactionsStructural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
Paul K. Hurley; Eamon O'Connor; Scott Monaghan; Rathnait Long; Aileen O'Mahony; Ian M. Povey; Karim Cherkaoui; John MacHale; Aidan Quinn; Guy Brammertz; Marc M. Heyns; Simon Newcomb; Valeri V. Afanas'ev; Arif Sonnet; Rohit Galatage; Naqi Jivani; Eric Vogel; Robert M. Wallace; Martyn Pemble; (2009) Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53). : . [Details]
2009Microelectronic EngineeringBand offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : .
2009Applied Physics LettersEnergy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : .
2009Journal of Colloid and Interface ScienceLangmuir-Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules
Bardosova, M.,Dillon, F. C.,Pemble, M. E.,Povey, I. M.,Tredgold, R. H. (2009) Langmuir-Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules. : .
2009Applied Physics LettersEnergy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2. : .
2009ECS TransactionsStructural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
Paul K. Hurley, Eamon O'Connor, Scott Monaghan, Rathnait Long, Aileen O'Mahony, Ian M. Povey, Karim Cherkaoui, John MacHale, Aidan Quinn, Guy Brammertz, Marc M. Heyns, Simon Newcomb, Valeri V. Afanas'ev, Arif Sonnet, Rohit Galatage, Naqi Jivani, Eric Vogel, Robert M. Wallace and Martyn Pemble (2009) Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53). : . [Details]
2009Thin Solid FilmsA comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films
Garnier, J.,Bouteville, A.,Hamilton, J.,Pemble, M. E.,Povey, I. M. (2009) A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films. : .
2009Microelectronic EngineeringBand offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2. : .
2009Thin Solid FilmsA comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films
Garnier J.;Bouteville A.;Hamilton J.;Pemble M.;Povey I. (2009) A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films. : . [Details]
2009Microelectronic EngineeringBand offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2
Afanas'ev V.;Stesmans A.;Brammertz G.;Delabie A.;Sionke S.;O'Mahony A.;Povey I.;Pemble M.;O'Connor E.;Hurley P.;Newcomb S. (2009) Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2. : . [Details]
2009Applied Physics LettersTemperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods
O’Connor, 'Eamon and Monaghan, Scott and Long, Rathnait D and O’Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn E and Brammertz, Guy and Heyns, Marc and Newcomb, Simon B and others (2009) Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods. : .
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition
Long, Rathnait D and O’Connor, 'Eamon and Newcomb, Simon B and Monaghan, Scott and Cherkaoui, Karim and Casey, P and Hughes, Gregory and Thomas, Kevin K and Chalvet, F and Povey, Ian M and others (2009) Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition. : .
2008Journal of Applied PhysicsModification of Emission of Cdte Nanocrystals By The Local Field of Langmuir-Blodgett Colloidal Photonic Crystals
Romanov, SG, Bardosova, M, Povey, IM, Torres, CMS, Pemble, ME, Gaponik, N, Eychmuller, A; (2008) Modification of Emission of Cdte Nanocrystals By The Local Field of Langmuir-Blodgett Colloidal Photonic Crystals. : . [Details]
2008Thin Solid FilmsA comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods
Povey, IM;Bardosova, M;Dillon, FC;Chalvet, F;Pemble, ME;Thomas, K (2008) A comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods. : ELSEVIER SCIENCE SA. [Details]
2008Journal of Optics A: Pure and Applied OpticsBleaching-induced evolution of directional emission from dye-loaded opals
Khunsin, W;Romanov, SG;Bardosova, M;Whitehead, D;Pemble, M;Povey, IM;Torres, CMS (2008) Bleaching-induced evolution of directional emission from dye-loaded opals. : IOP PUBLISHING LTD. [Details]
2008Applied Physics LettersLASERS, OPTICS, AND OPTOELECTRONICS
Ilan, Har’el and Gumennik, Alexander and Perepelitsa, Galina and Israel, Abraham and Lu, Ruibo and Ge, Zhibing and Kiraz, A and Karadaug (2008) LASERS, OPTICS, AND OPTOELECTRONICS. : .
2008Journal of Optics A: Pure and Applied OpticsBleaching-induced evolution of directional emission from dye-loaded opals
Khunsin, W and Romanov, SG and Bardosova, M and Whitehead, D and Pemble, M and Povey, IM and Torres, CM Sotomayor (2008) Bleaching-induced evolution of directional emission from dye-loaded opals. : .
2008Applied Physics LettersIn Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : . [Details]
2008The Journal of the Acoustical Society of AmericaOpto-acousto-optic evaluation of the physical properties of nanoporous materials
Mechri, Charfeddine and Ruello, Pascal and Nsenkoue, M and Mounier, Denis and Breteau, Jean-Marc and Edely, Mathieu and Minhao, Y and Gibaud, Alain and Povey, I and Pemble, M and others (2008) Opto-acousto-optic evaluation of the physical properties of nanoporous materials. : .
2008Applied Physics LettersEnergy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2
Afanasev, VV and Badylevich, Mikhail and Stesmans, Andre and Brammertz, Guy and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and others (2008) Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2. : .
2008Applied Physics LettersIn situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : .
2008Applied Physics LettersUnderstanding of transmission in the range of high-order photonic bands in thin opal film
Romanov, S. G.,Bardosova, M.,Povey, I. M.,Pemble, M. E.,Torres, C. M. S. (2008) Understanding of transmission in the range of high-order photonic bands in thin opal film. : .
2008Journal of Applied PhysicsModification of emission of CdTe nanocrystals by the local field of Langmuir-Blodgett colloidal photonic crystals
Romanov, S. G.,Bardosova, M.,Povey, I. M.,Torres, C. M. S.,Pemble, M. E.,Gaponik, N.,Eychmuller, A. (2008) Modification of emission of CdTe nanocrystals by the local field of Langmuir-Blodgett colloidal photonic crystals. : .
2008Thin Solid FilmsA comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods
Povey, I. M.,Bardosova, M.,Dillon, F. C.,Chalvet, F.,Pemble, M. E.,Thomas, K. (2008) A comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir-Blodgett methods. : .
2008Applied Physics LettersIn situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : . [Details]
2008Applied Physics LettersUnderstanding of transmission in the range of high-order photonic bands in thin opal film
Romanov, SG,Bardosova, M,Povey, IM,Pemble, ME,Torres, CMS; (2008) Understanding of transmission in the range of high-order photonic bands in thin opal film. : . [Details]
2008Journal of Applied PhysicsModification of emission of CdTe nanocrystals by the local field of Langmuir-Blodgett colloidal photonic crystals
Romanov, SG,Bardosova, M,Povey, IM,Torres, CMS,Pemble, ME,Gaponik, N,Eychmuller, A; (2008) Modification of emission of CdTe nanocrystals by the local field of Langmuir-Blodgett colloidal photonic crystals. : . [Details]
2008Electrochemical Society TransactionsInfrared and near-infrared spectroscopic probing of atomic layer deposition processes
O'Mahony, A,Pemble, ME,Povey, IM; (2008) Infrared and near-infrared spectroscopic probing of atomic layer deposition processes. : . [Details]
2008Applied Physics LettersUnderstanding of Transmission In The Range of High-Order Photonic Bands In Thin Opal Film
Romanov, SG, Bardosova, M, Povey, IM, Pemble, ME, Torres, CMS; (2008) Understanding of Transmission In The Range of High-Order Photonic Bands In Thin Opal Film. : . [Details]
2008Thin Solid FilmsA Comparison of The Gaas Atomic Layer Deposition Infiltration of Photonic Crystals Engineered By The Controlled Evaporation and Langmuir-Blodgett Methods
Povey, IM, Bardosova, M, Dillon, FC, Chalvet, F, Pemble, ME, Thomas, K; (2008) A Comparison of The Gaas Atomic Layer Deposition Infiltration of Photonic Crystals Engineered By The Controlled Evaporation and Langmuir-Blodgett Methods. : . [Details]
2008Applied Physics LettersEnergy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2
Afanas'ev, VV, Badylevich, M, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2008) Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2. : . [Details]
2007Photonics and Nanostructures-Fundamentals and ApplicationsPhotonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality
Dillon, FC,O'Mahony, A,Deeney, FA,Povey, IM,Bardosova, M,Pemble, ME; (2007) Photonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality. : . [Details]
2007Applied Physics LettersErasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals
Romanov, S. G.,Bardosova, M.,Whitehead, D. E.,Povey, I. M.,Pemble, M.,Torres, C. M. S. (2007) Erasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals. : .
2007Surface & Coatings TechnologyAtomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems
Povey I.;Bardosova M.;Chalvet F.;Pemble M.;Yates H. (2007) Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems. : . [Details]
2007Applied Physics LettersErasing Diffraction Orders: Opal Versus Langmuir-Blodgett Colloidal Crystals
Romanov, SG, Bardosova, M, Whitehead, DE, Povey, IM, Pemble, M, Torres, CMS; (2007) Erasing Diffraction Orders: Opal Versus Langmuir-Blodgett Colloidal Crystals. : . [Details]
2007Physica B-Condensed MatterNovel photonic crystal thin films using the Langmuir-Blodgett approach
Pemble, M. E.,Bardosova, M.,Povey, I. M.,Tredgold, R. H.,Whitehead, D. (2007) Novel photonic crystal thin films using the Langmuir-Blodgett approach. : .
2007Surface & Coatings TechnologyAtomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems
Povey, I. M.,Bardosova, M.,Chalvet, F.,Pemble, M. E.,Yates, H. M. (2007) Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems. : .
2007Photonics and Nanostructures-Fundamentals and ApplicationsPhotonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality
Dillon, F. C.,O'Mahony, A.,Deeney, F. A.,Povey, I. M.,Bardosova, M.,Pemble, M. E. (2007) Photonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality. : .
2006Applied Physics LettersPhotonic crystal thin films of GaAs prepared by atomic layer deposition
Povey, IM,Whitehead, D,Thomas, K,Pemble, ME,Bardosova, M,Renard, J; (2006) Photonic crystal thin films of GaAs prepared by atomic layer deposition. : . [Details]
2006Applied Physics LettersEnhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method
Bardosova, M.,Pemble, M. E.,Povey, I. M.,Tredgold, R. H.,Whitehead, D. E. (2006) Enhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method. : .
1998Chemical Vapor DepositionThe kinetics and mechanism of the pyrolysis of manganese and manganese silicide CVD precursors
Russell, Douglas K and Davidson, Iain MT and Ellis, Andrew M and Mills, Graham P and Pennington, Mark and Povey, Ian M and Raynor, J Barrie and Saydam, Sinan (1998) The kinetics and mechanism of the pyrolysis of manganese and manganese silicide CVD precursors. : .
1995OrganometallicsMechanisms of Pyrolysis of Tricarbonylcyclopentadienylmanganese and Tricarbonyl (methylcyclopentadienyl) manganese
Russell, Douglas K and Davidson, Iain MT and Ellis, Andrew M and Mills, Graham P and Pennington, Mark and Povey, Ian M and Raynor, J Barrie and Saydam, Sinan and Workman, Andrew D (1995) Mechanisms of Pyrolysis of Tricarbonylcyclopentadienylmanganese and Tricarbonyl (methylcyclopentadienyl) manganese. : .
1994Journal of Crystal GrowthThe Use of Hex-Enylarsine as a Chemically Designed Precursor to Probe the Mechanisms of the Metalorganic Vapor-Phase Epitaxy Growth of Gallium-Arsenide - Consequences for Reactor Design
Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Williams, J. O.,Foster, D. F.,Glidewell, C.,Colehamilton, D. J. (1994) The Use of Hex-Enylarsine as a Chemically Designed Precursor to Probe the Mechanisms of the Metalorganic Vapor-Phase Epitaxy Growth of Gallium-Arsenide - Consequences for Reactor Design. : .
1994Journal of the Electrochemical SocietyDecomposition of Cyanoethylphosphine, Benzylphosphine, and Cyclopentylphosphine during Inp Mocvd Growth Studied by Ftir Spectroscopy - Criteria for the Design of Organophosphine Precursors
Abdulridha, H. H.,Bateman, J. E.,Fan, G. H.,Pemble, M. E.,Povey, I. M. (1994) Decomposition of Cyanoethylphosphine, Benzylphosphine, and Cyclopentylphosphine during Inp Mocvd Growth Studied by Ftir Spectroscopy - Criteria for the Design of Organophosphine Precursors. : .
1994Journal of Materials ChemistryChemical-Vapor-Deposition of Zro2 Thin-Films Monitored by Ir Spectroscopy
Gould, B. J.,Povey, I. M.,Pemble, M. E.,Flavell, W. R. (1994) Chemical-Vapor-Deposition of Zro2 Thin-Films Monitored by Ir Spectroscopy. : .
1994Journal of Crystal GrowthDo Gas-Phase Adducts Form during Metalorganic Vapor-Phase Epitaxial-Growth of Gallium-Arsenide
Foster, D. F.,Glidewell, C.,Colehamilton, D. J.,Povey, I. M.,Hoare, R. D.,Pemble, M. E. (1994) Do Gas-Phase Adducts Form during Metalorganic Vapor-Phase Epitaxial-Growth of Gallium-Arsenide. : .
1994The Journal of Physical ChemistrySpectroscopic Investigation of Zinc-Containing Organometallic Radicals Prepared Using a Pulsed Electrical Discharge Nozzle
Povey, Ian M and Bezant, Andrew J and Corlett, Gary K and Ellis, Andrew M (1994) Spectroscopic Investigation of Zinc-Containing Organometallic Radicals Prepared Using a Pulsed Electrical Discharge Nozzle. : .
1993Applied Surface ScienceReflectance Anisotropy from (001) Gaas-Surfaces during Pseudo-Ale Growth of Gaas
Armstrong, S. R.,Hoare, R. D.,Povey, I. M.,Pemble, M. E.,Stafford, A.,Taylor, A. G.,Klug, D. R. (1993) Reflectance Anisotropy from (001) Gaas-Surfaces during Pseudo-Ale Growth of Gaas. : .
1993Journal of Crystal GrowthOptical 2nd-Harmonic Generation Studies of the Nature of the Gaas (100) Surface in the Air - Reply
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G. (1993) Optical 2nd-Harmonic Generation Studies of the Nature of the Gaas (100) Surface in the Air - Reply. : .
1993Faraday DiscussionsProbing Surface Chemical Processes during Epitaxial Semiconductor Crystal-Growth at near-Atmospheric Pressures Using Photon-Based Techniques
Pemble, M. E.,Armstrong, S. R.,Curry, S. M.,Hoare, R. D.,Logothetis, G.,Povey, I. M.,Stafford, A.,Taylor, A. G. (1993) Probing Surface Chemical Processes during Epitaxial Semiconductor Crystal-Growth at near-Atmospheric Pressures Using Photon-Based Techniques. : .
1993Surface ScienceOptical 2nd-Harmonic Generation Studies of the Nature of the Oxide-Covered and Clean C(4x4) and (2x4) Reconstructed Gaas(001) Surfaces
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G.,Joyce, B. A.,Neave, J. H.,Zhang, J. (1993) Optical 2nd-Harmonic Generation Studies of the Nature of the Oxide-Covered and Clean C(4x4) and (2x4) Reconstructed Gaas(001) Surfaces. : .
1992Journal of Crystal GrowthOptical Monitoring of Deposition and Decomposition Processes in Mocvd and Mbe Using Reflectance Anisotropy
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G.,Fawcette, P.,Joyce, B. A.,Klug, D. R.,Neave, J.,Zhang, J. (1992) Optical Monitoring of Deposition and Decomposition Processes in Mocvd and Mbe Using Reflectance Anisotropy. : .
1992Surface ScienceA Rheed and Reflectance Anisotropy Study of the Mbe Growth of Gaas, Alas and Inas on Gaas(001)
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G.,Joyce, B. A.,Neave, J. H.,Klug, D. R.,Zhang, J. (1992) A Rheed and Reflectance Anisotropy Study of the Mbe Growth of Gaas, Alas and Inas on Gaas(001). : .
1992Journal of Crystal GrowthGas-Phase Monitoring of Reactions under Inp Movpe Growth-Conditions for the Decomposition of Tertiarybutyl Phosphine and Related Precursors
Fan, G. H.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Taylor, A. G. (1992) Gas-Phase Monitoring of Reactions under Inp Movpe Growth-Conditions for the Decomposition of Tertiarybutyl Phosphine and Related Precursors. : .
1992Journal of Crystal GrowthThe Pyrolysis of Precursors for Gaas Mocvd Studied by Insitu and Exsitu Fourier-Transform Infrared-Spectroscopy
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G.,Williams, J. O. (1992) The Pyrolysis of Precursors for Gaas Mocvd Studied by Insitu and Exsitu Fourier-Transform Infrared-Spectroscopy. : .
1992Journal of Crystal GrowthOptical 2nd Harmonic-Generation Studies of the Nature of the Gaas(100) Surface in Air
Armstrong, S. R.,Hoare, R. D.,Pemble, M. E.,Povey, I. M.,Stafford, A.,Taylor, A. G. (1992) Optical 2nd Harmonic-Generation Studies of the Nature of the Gaas(100) Surface in Air. : .

Other Journals

YearJournalPublication
2014physica status solidi (RRL)-Rapid Research LettersJunctionless nanowire transistor fabricated with high mobility Ge channel
Yu, Ran and Georgiev, Yordan M and Das, Samaresh and Hobbs, Richard G and Povey, Ian M and Petkov, Nikolay and Shayesteh, Maryam and O'Connell, Dan and Holmes, Justin D and Duffy, Ray (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : .
2014Applied Physics LettersElectrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22%(NH4) 2S surface treatments
Peralagu, Uthayasankaran and Povey, Ian M and Carolan, Patrick and Lin, Jun and Contreras-Guerrero, Rocio and Droopad, Ravi and Hurley, Paul K and Thayne, Iain G (2014) Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22%(NH4) 2S surface treatments. : .
2012Meeting AbstractsCan Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to In0. 53Ga0. 47As MOSFET Characteristics
Cherkaoui, Karim and Djara, Vladimir and O'Connor, Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to In0. 53Ga0. 47As MOSFET Characteristics. : .
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO< sub> 2 thin films
Modreanu, M and Monaghan, S and Povey, IM and Cherkaoui, K and Hurley, PK and Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO< sub> 2 thin films. : .
2011Thin Solid FilmsThe effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method
O'Brien, Shane and cCopuroglu, Mehmet and Tassie, Paul and Nolan, Mark G and Hamilton, Jeff A and Povey, Ian and Pereira, Luis and Martins, Rodrigo and Fortunato, Elvira and Pemble, Martyn E (2011) The effect of dopants on the morphology, microstructure and electrical properties of transparent zinc oxide films prepared by the sol-gel method. : .
2011Chemical Vapor DepositionNucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition
Sala"un, Amelie and Newcomb, Simon B and Povey, Ian M and Sala"un, Mathieu and Keeney, Lynette and O'Mahony, Aileen and Pemble, Martyn E (2011) Nucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition. : .
2011Journal of Nanoscience and NanotechnologySelected Peer-Reviewed Articles from The EuroCVD-18 Conference (EuroCVD 2011)
Pemble, Martyn E and Elliott, Simon D and Povey, Ian M and O'Regan, Mary-Claire (2011) Selected Peer-Reviewed Articles from The EuroCVD-18 Conference (EuroCVD 2011). : .
2010Meeting AbstractsFixed Charge, Interface States and Equivalent Oxide Thickness Correction in the High-k/In0. 53Ga0. 47As System
Hurley, Paul K and O'Connor, Eamon and O'Regan, Terrance and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) Fixed Charge, Interface States and Equivalent Oxide Thickness Correction in the High-k/In0. 53Ga0. 47As System. : .
2010Advanced materialsThe Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres
Bardosova, Maria and Pemble, Martyn E and Povey, Ian M and Tredgold, Richard H (2010) The Langmuir-Blodgett Approach to Making Colloidal Photonic Crystals from Silica Spheres. : .
2010Thin Solid FilmsZinc oxide thin films: Characterization and potential applications
O'Brien, Shane and Nolan, Mark G and cCopuroglu, Mehmet and Hamilton, Jeff A and Povey, Ian and Pereira, Luis and Martins, Rodrigo and Fortunato, Elvira and Pemble, Martyn (2010) Zinc oxide thin films: Characterization and potential applications. : .
2010Thin Solid FilmsThe incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition
Sala"un, A and Hamilton, JA and Iacopino, D and Newcomb, SB and Nolan, MG and Padmanabhan, SC and Povey, IM and Sala"un, M and Pemble, ME (2010) The incorporation of preformed metal nanoparticles in zinc oxide thin films using aerosol assisted chemical vapour deposition. : .
2010Meeting AbstractsStructural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Blake, Alan and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and others (2010) Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate in Metal-Oxide-Semiconductor Capacitors. : .
2009Meeting AbstractsGrowth and Characterisation of Zinc Oxide Thin Films Containing Directly Incorporated Silicon Nanoparticles by Aerosol Assisted Chemical Vapour Deposition
Hamilton, Jeff and Iacopino, Daniela and Nolan, Mark and O'Brien, Shane and Povey, Ian M and Pemble, Martyn and Licitra, Christophe and Rochat, N'evine and Florin, Brigitte and Lafond, Dominique and others (2009) Growth and Characterisation of Zinc Oxide Thin Films Containing Directly Incorporated Silicon Nanoparticles by Aerosol Assisted Chemical Vapour Deposition. : .
2009Meeting AbstractsAtomic layer deposition of magnesium oxide on GaAs
O'Mahony, Aileen and Chiodo, Rosario and Nolan, Mark and Hamilton, Jeff and Povey, Ian M and Pemble, Martyn (2009) Atomic layer deposition of magnesium oxide on GaAs. : .
2009Meeting AbstractsCapacitance-Voltage and Conductance Analysis of High-k/InxGa1-xAs Structures (x=0, 0.15, 0.3, and 0.53)
Hurley, Paul K and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and O'Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn and MacHale, John and Quinn, Aidan and others (2009) Capacitance-Voltage and Conductance Analysis of High-k/InxGa1-xAs Structures (x=0, 0.15, 0.3, and 0.53). : .
2009Applied physics lettersEnergy barriers at interfaces between (100) In x Ga 1-x As (0≤ x≤ 0.53) and atomic-layer deposited Al 2 O 3 and HfO 2
Afanasev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) In x Ga 1-x As (0≤ x≤ 0.53) and atomic-layer deposited Al 2 O 3 and HfO 2. : .
2009Microelectronic EngineeringBand offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0⩽< i> x⩽ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0⩽< i> x⩽ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2. : .
2009Thin Solid FilmsA comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films
Garnier, J'er^ome and Bouteville, Anne and Hamilton, Jeff and Pemble, Martyn E and Povey, Ian M (2009) A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films. : .
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0. 53Ga0. 47As surfaces by atomic layer deposition
Long, RD and O’Connor, 'E and Newcomb, SB and Monaghan, S and Cherkaoui, K and Casey, P and Hughes, G and Thomas, KK and Chalvet, F and Povey, IM and others (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0. 53Ga0. 47As surfaces by atomic layer deposition. : .
2009Journal of colloid and interface scienceLangmuir--Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules
Bardosova, Maria and Dillon, Frank C and Pemble, Martyn E and Povey, Ian M and Tredgold, Richard H (2009) Langmuir--Blodgett assembly of colloidal photonic crystals using silica particles prepared without the use of surfactant molecules. : .
2008Thin Solid FilmsA comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir--Blodgett methods
Povey, IM and Bardosova, M and Dillon, FC and Chalvet, F and Pemble, ME and Thomas, K (2008) A comparison of the GaAs atomic layer deposition infiltration of photonic crystals engineered by the controlled evaporation and Langmuir--Blodgett methods. : .
2008Journal of Applied PhysicsModification of emission of CdTe nanocrystals by the local field of Langmuir--Blodgett colloidal photonic crystals
Romanov, Sergei G and Bardosova, Maria and Povey, Ian M and Torres, CM Sotomayor and Pemble, Martyn E and Gaponik, Nikolai and Eychm"uller, Alexander (2008) Modification of emission of CdTe nanocrystals by the local field of Langmuir--Blodgett colloidal photonic crystals. : .
2008Meeting AbstractsAtomic Layer Deposition of Metal and Metal Oxide Nanostructures
Povey, Ian M and O'Mahony, Aileen and Dillon, Frank and Bardosova, Maria and Pemble, Martyn E (2008) Atomic Layer Deposition of Metal and Metal Oxide Nanostructures. : .
2008status: publishedTemperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2
O'Connor, E and Long, RD and Monaghan, S and Brammertz, Guy and Cherkaoui, K and O'Mahony, A and Povey, IM and Pemble, ME and Heyns, Marc and Afanasiev, Valeri and others (2008) Temperature dependent capacitance-voltage and conductance-voltage characterisation of the HfO2. : .
2008ECS TransactionsIn-situ probing of atomic layer deposition processes using infrared and near infrared spectroscopy
O'Mahony, Aileen and Povey, Ian M and Pemble, Martyn E (2008) In-situ probing of atomic layer deposition processes using infrared and near infrared spectroscopy. : .
2008Meeting AbstractsReal Time In-Situ Probing of Atomic Layer Deposition Processes using Infrared and Near Infrared Spectroscopy
O'Mahony, Aileen and Povey, Ian M and Pemble, Martyn E (2008) Real Time In-Situ Probing of Atomic Layer Deposition Processes using Infrared and Near Infrared Spectroscopy. : .
2007ECS TransactionsDevelopments in the Understanding of ALD Processes and Applications of ALD in Critical Technologies
Pemble, Martyn and Povey, Ian and Chalvet, Francis (2007) Developments in the Understanding of ALD Processes and Applications of ALD in Critical Technologies. : .
2007Photonics and Nanostructures-Fundamentals and ApplicationsPhotonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality
Dillon, FC and O’Mahony, A and Deeney, FA and Povey, IM and Bardosova, M and Pemble, ME (2007) Photonic band gap thin films from mesoporous silica spheres acting as receptacles for species yielding added functionality. : .
2007Surface & coatings technologyAtomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of AlOo3 and VO2 photonic crystal systems
Povey, IM and Bardosova, M and Chalvet, F and Pemble, ME and Yates, HM (2007) Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of AlOo3 and VO2 photonic crystal systems. : .
2007Physica B: Condensed MatterNovel photonic crystal thin films using the Langmuir--Blodgett approach
Pemble, Martyn E and Bardosova, Maria and Povey, Ian M and Tredgold, Richard H and Whitehead, Debra (2007) Novel photonic crystal thin films using the Langmuir--Blodgett approach. : .
2007Applied physics lettersErasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals
Romanov, SG and Bardosova, M and Whitehead, DE and Povey, IM and Pemble, M and Torres, CM Sotomayor (2007) Erasing diffraction orders: Opal versus Langmuir-Blodgett colloidal crystals. : .
2007Surface and Coatings TechnologyAtomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al< sub> 2 O< sub> 3 and VO< sub> 2 photonic crystal systems
Povey, IM and Bardosova, M and Chalvet, F and Pemble, ME and Yates, HM (2007) Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al< sub> 2 O< sub> 3 and VO< sub> 2 photonic crystal systems. : .
2006Atmospheric Chemistry and PhysicsThe North Atlantic marine boundary layer experiment (NAMBLEX). Overview of the campaign held at Mace Head, Ireland, in summer 2002
Heard, DE and Read, KA and Methven, J and Al-Haider, S and Bloss, WJ and Johnson, GP and Pilling, MJ and Seakins, PW and Smith, SC and Sommariva, R and others (2006) The North Atlantic marine boundary layer experiment (NAMBLEX). Overview of the campaign held at Mace Head, Ireland, in summer 2002. : .
2006Applied physics lettersEnhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method
Bardosova, MPME and Pemble, ME and Povey, IM and Tredgold, RH and Whitehead, DE (2006) Enhanced Bragg reflections from size-matched heterostructure photonic crystal thin films prepared by the Langmuir-Blodgett method. : .
2006Applied physics lettersPhotonic crystal thin films of GaAs prepared by atomic layer deposition
Povey, IM and Whitehead, Debra and Thomas, K and Pemble, ME and Bardosova, M and Renard, J (2006) Photonic crystal thin films of GaAs prepared by atomic layer deposition. : .
2005Atmospheric Chemistry and PhysicsA broadband cavity ringdown spectrometer for in-situ measurements of atmospheric trace gases
Bitter, M and Ball, SM and Povey, IM and Jones, RL (2005) A broadband cavity ringdown spectrometer for in-situ measurements of atmospheric trace gases. : .
2005Atmospheric Chemistry and Physics DiscussionsThe North Atlantic Marine Boundary Layer Experiment (NAMBLEX). Overview of the campaign held at Mace Head, Ireland, in summer 2002
Heard, DE and Read, KA and Methven, J and Al-Haider, S and Bloss, WJ and Johnson, GP and Pilling, MJ and Seakins, PW and Smith, SC and Sommariva, R and others (2005) The North Atlantic Marine Boundary Layer Experiment (NAMBLEX). Overview of the campaign held at Mace Head, Ireland, in summer 2002. : .
2002Harrison, RM, Donovan, RJ, Heal, M. R., Jennings, SG, Noone, C., and Spain, G.: The North Atlantic Marine Boundary Layer Experiment (NAMBLEX). Overview of the campaign held at Mace Head, Ireland, in summerCS, Dall’Osto, M
Heard, DE and Read, KA and Methven, J and Al-Haider, S and Bloss, WJ and Johnson, GP and Pilling, MJ and Seakins, PW and Smith, SC and Sommariva, R and others (2002) CS, Dall’Osto, M. : .
2001PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERINGBroadband CCD detection system for rotational Raman lidar studies of the troposphere [4153-104]
Norton, EG and Povey, IM and South, AM and Jones, RL (2001) Broadband CCD detection system for rotational Raman lidar studies of the troposphere [4153-104]. : .
2001Chemical Physics LettersAshok, V., see Rosa, A. 342 (2001) 536 Asirvatham, PS, see Subramanian, V. 342 (2001) 603 Ausman, KD, see O'Connell, MJ 342 (2001) 265
Ball, SM and Povey, IM and Norton, EG and Jones, RL (2001) Ashok, V., see Rosa, A. 342 (2001) 536 Asirvatham, PS, see Subramanian, V. 342 (2001) 603 Ausman, KD, see O'Connell, MJ 342 (2001) 265. : .
2001Chemical physics lettersBroadband cavity ringdown spectroscopy of the NO< sub> 3 radical
Ball, Stephen M and Povey, Ian M and Norton, Emily G and Jones, Roderic L (2001) Broadband cavity ringdown spectroscopy of the NO< sub> 3 radical. : .
1998Journal of Geophysical Research: Atmospheres (1984--2012)A broadband lidar for the measurement of tropospheric constituent profiles from the ground
Povey, IM and South, AM and Roodenbeke, A and Hill, C and Freshwater, RA and Jones, RL (1998) A broadband lidar for the measurement of tropospheric constituent profiles from the ground. : .
1998NASABroadband lidar measurements of tropospheric constituent profiles
Povey, IM and South, AM and Hill, C and Jones, RL (1998) Broadband lidar measurements of tropospheric constituent profiles. : .
1998Journal of Geophysical Research: Atmospheres (1984--2012)Broadband lidar measurements of tropospheric water vapor profiles
South, AM and Povey, IM and Jones, RL (1998) Broadband lidar measurements of tropospheric water vapor profiles. : .
1996The Journal of chemical physicsQuantum beat study of the nuclear hyperfine structure of OD and Ar⋅ OD in their A 2$Sigma$+ electronic states
Carter, Robert T and Povey, Ian M and Bitto, H and Huber, J Robert (1996) Quantum beat study of the nuclear hyperfine structure of OD and Ar⋅ OD in their A 2$Sigma$+ electronic states. : .
1996Chemical physics lettersQuantum beat spectroscopy of jet-cooled transient radicals generated by a pulsed electrical discharge
Povey, Ian M and Carter, Robert T and Bitto, H and Robert Huber, J (1996) Quantum beat spectroscopy of jet-cooled transient radicals generated by a pulsed electrical discharge. : .
1994Journal of Materials ChemistryMechanisms of pyrolysis of organometallic deposition precursors
Iain, MT and Barrie'aRaynor, J and others (1994) Mechanisms of pyrolysis of organometallic deposition precursors. : .
1994Journal of crystal growthThe use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide; consequences for reactor design
Hoare, RD and Pemble, ME and Povey, IM and Williams, JO and Foster, DF and Glidewell, C and Cole-Hamilton, DJ (1994) The use of hex-5-enylarsine as a chemically designed precursor to probe the mechanisms of the metalorganic vapour phase epitaxy growth of gallium arsenide; consequences for reactor design. : .
1994Journal of crystal growthDo gas phase adducts form during metalorganic vapour phase epitaxial growth of gallium arsenide?
Foster, Douglas F and Glidewell, Christopher and Cole-Hamilton, David J and Povey, Ian M and Hoare, Richard D and Pemble, Martyn E (1994) Do gas phase adducts form during metalorganic vapour phase epitaxial growth of gallium arsenide?. : .
1994Journal of the Electrochemical SocietyDecomposition of Cyanoethylphosphine, Benzylphosphine, and Cyclopentylphosphine during InP MOCVD Growth Studied by FTIR Spectroscopy Criteria for the Design of Organophosphine Precursors
Abdul-Ridha, HH and Bateman, JE and Fan, GH and Pemble, ME and Povey, IM (1994) Decomposition of Cyanoethylphosphine, Benzylphosphine, and Cyclopentylphosphine during InP MOCVD Growth Studied by FTIR Spectroscopy Criteria for the Design of Organophosphine Precursors. : .
1994Journal of Materials ChemistryChemical vapour deposition of ZrO2 thin films monitored by IR spectroscopy
Gould, Benjamin J and Povey, Ian M and Pemble, Martyn E and Flavell, Wendy R (1994) Chemical vapour deposition of ZrO2 thin films monitored by IR spectroscopy. : .
1993Surface ScienceAckermann, L., see Chesters Adnot, A., see Shu Aebi, P., see Hitchcock Alfonso, C., JC Heyraud and JJ M6tois, About the sublimation of Si surfaces vicinal of $$111$$
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and Joyce, BA and Neave, JH and Zhang, J and others (1993) Ackermann, L., see Chesters Adnot, A., see Shu Aebi, P., see Hitchcock Alfonso, C., JC Heyraud and JJ M6tois, About the sublimation of Si surfaces vicinal of $$111$$. : .
1993Faraday Discuss.Probing surface chemical processes during epitaxial semiconductor crystal growth at near-atmospheric pressures using photon-based techniques
Pemble, Martyn E and Armstrong, Stephen R and Curry, Suzanne M and Hoare, Richard D and Logothetis, George and Povey, Ian M and Stafford, Andrew and Taylor, Alan G (1993) Probing surface chemical processes during epitaxial semiconductor crystal growth at near-atmospheric pressures using photon-based techniques. : .
1993Applied surface scienceReflectance anisotropy from (001) GaAs surfaces during pseudo-ALE growth of GaAs
Armstrong, SR and Hoare, RD and Povey, IM and Pemble, ME and Stafford, A and Taylor, AG and Klug, DR (1993) Reflectance anisotropy from (001) GaAs surfaces during pseudo-ALE growth of GaAs. : .
1993Journal of crystal growthReply to comments on “optical second harmonic generation studies of the nature of the GaAs (100) surface in the air”
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG (1993) Reply to comments on “optical second harmonic generation studies of the nature of the GaAs (100) surface in the air”. : .
1992Journal of crystal growthOptical second harmonic generation studies of the nature of the GaAs (100) surface in air
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG (1992) Optical second harmonic generation studies of the nature of the GaAs (100) surface in air. : .
1992Surface scienceA RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs (001)
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and Joyce, BA and Neave, JH and Klug, DR and Zhang, J (1992) A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs (001). : .
1992Journal of crystal growthGas phase monitoring of reactions under InP MOVPE growth conditions for the decomposition of tertiarybutyl phosphine and related precursors
Fan, GH and Hoare, RD and Pemble, ME and Povey, IM and Taylor, AG and Williams, JO (1992) Gas phase monitoring of reactions under InP MOVPE growth conditions for the decomposition of tertiarybutyl phosphine and related precursors. : .
1992Journal of crystal growthThe pyrolysis of precursors for GaAs MOCVD studied by in-situ and ex-situ Fourier transform infrared spectroscopy
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and Williams, JO (1992) The pyrolysis of precursors for GaAs MOCVD studied by in-situ and ex-situ Fourier transform infrared spectroscopy. : .
1992Surface ScienceAbdelmoula, M., T. Ceva, B. Croset and N. DuPont-Pavlovsky, Thermodynamic and structural properties of Ccl, adsorbed on (0001) graphite Ahmed, N., see Yaldram Ai, R., H.-J. Fan and LD Marks, Electron-stimulated surface reactions in ReO, Alameh, R., see Borensztein
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG (1992) Abdelmoula, M., T. Ceva, B. Croset and N. DuPont-Pavlovsky, Thermodynamic and structural properties of Ccl, adsorbed on (0001) graphite Ahmed, N., see Yaldram Ai, R., H.-J. Fan and LD Marks, Electron-stimulated surface reactions in ReO, Alameh, R., see Borensztein. : .
1992Journal of crystal growthOptical monitoring of deposition and decomposition processes in MOCVD and MBE using reflectance anisotropy
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and Fawcette, P and Joyce, BA and Klug, DR and Neave, J and others (1992) Optical monitoring of deposition and decomposition processes in MOCVD and MBE using reflectance anisotropy. : .
1992Journal of Crystal GrowthNorth-Holland OROWTH
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and others (1992) North-Holland OROWTH. : .

Conference Publications

YearPublication
2014American Association of Pharmaceutical Scientists (AAPS)
Ryan K. B., Wright E., Culligan E., Povey I., Pemble M., O' Driscoll C. (2014) American Association of Pharmaceutical Scientists (AAPS). : .
2014Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and O'Connor, Eamon and Sheehan, Brendan and Hurley, Paul K (2014) Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International. : .
201418th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland
Fu, Y.-C., Peralagu, U., Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I. (2014) 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland. : .
2013Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M. (2013) Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. : . [Details]
2013Device Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Device Research Conference (DRC), 2013 71st Annual. : .
2013Power in Unity: a Whole System Approach, IET Conference on
Williamson, GE and Emin, Z and Povey, I (2013) Power in Unity: a Whole System Approach, IET Conference on. : .
201213th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349. : . [Details]
20125th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682. : . [Details]
2012Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : .
2011Selected Peer-Reviewed Articles from The EuroCVD-18 Conference (EuroCVD 2011)
Pemble, M. E.,Elliott, S. D.,Povey, I. M.,O'Regan, M. C. (2011) Selected Peer-Reviewed Articles from The EuroCVD-18 Conference (EuroCVD 2011). : .
2009WOMEN IN PHYSICS: Third IUPAP International Conference on Women in Physics
Bardosova, M and Dillon, FC and Pemble, ME and Povey, IM and Romanov, SG and Tredgold, RH (2009) WOMEN IN PHYSICS: Third IUPAP International Conference on Women in Physics. : .
2009Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on
Wilson, Simon and Gosden, Mark and Povey, Ian (2009) Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on. : .
2009Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on
Levi, Victor and Peacock, Rob and Costa, Marc and Povey, Ian and Kay, Mike (2009) Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on. : .
2009Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on
Levi, Victor and Nedic, Dusko and Povey, Ian and Kay, Mike (2009) Electricity Distribution-Part 1, 2009. CIRED 2009. 20th International Conference and Exhibition on. : .
2008Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Ding, Boyang and Bardosova, Maria and Povey, Ian and Pemble, Martyn E and Romanov, Sergei G (2008) Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on. : .
2008Photonics Europe
Ding, Boyang and Bardosova, Maria and Povey, Ian and Pemble, Martyn E and Romanov, Sergei G (2008) Photonics Europe. : .
2007Transparent Optical Networks, 2007. ICTON'07. 9th International Conference on
Romanov, SG and Szachowicz, M and Bardosova, M and Povey, I and Pemble, M and Torres, Sotomayor (2007) Transparent Optical Networks, 2007. ICTON'07. 9th International Conference on. : .
2005Electricity Distribution, 2005. CIRED 2005. 18th International Conference and Exhibition on
Levi, Victor and Kay, Mike and Povey, Ian (2005) Electricity Distribution, 2005. CIRED 2005. 18th International Conference and Exhibition on. : .
200514th International Workshop on Heterostructured Technology (HETECH 05)
Chalvet, F.; Bardosova, M.; Pemble, M. E.; Povey, I. M.; Whitehead, D. E.; Kulkarni, J. S.; Holmes, J. D.; (2005) 14th International Workshop on Heterostructured Technology (HETECH 05). : .
2005Electricity Distribution, 2005. CIRED 2005. 18th International Conference and Exhibition on
Levi, Victor and Kay, Mike and Attree, Mike and Povey, Ian (2005) Electricity Distribution, 2005. CIRED 2005. 18th International Conference and Exhibition on. : .
2001Second International Asia-Pacific Symposium on Remote Sensing of the Atmosphere, Environment, and Space
Norton, Emily G and Povey, Ian M and South, AM and Jones, Roderic L (2001) Second International Asia-Pacific Symposium on Remote Sensing of the Atmosphere, Environment, and Space. : .
1992Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Fan, GH and Hoare, RD and Pemble, ME and Povey, IM and Williams, JO (1992) Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference. : .
1992Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Armstrong, SR and Hoare, RD and Pemble, ME and Povey, IM and Stafford, A and Taylor, AG and Fawcett, P and Joyce, BA and Neave, JH and Klug, D and others (1992) Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference. : .

Honours and Awards

  • [2011] - UCC Invention of the Year

Patents

  • [2013] WO2013057321 - A Single Crystal High Dielectric Constant Material,

Employment

  • [1992] University of Leicester - Post Doctoral Researcher
  • [1994] University of Zurich - Researcher
  • [1994] IBM Zurich - Researcher
  • [1996] University of Cambridge - Research Fellow
  • [2004] University College Cork - Tyndall - Senior Researcher
  • [2008] University College Cork - Tyndall - Staff Researcher
  • [2012] University College Cork - Tyndall - Principal Researcher

Education

  • [1989] University of Manchester - BSc (Hons)
  • [1992] University of Manchester - PhD
  • [2004] University of Southampton - MSc
  • [2012] University College Cork - PG Cert T&L

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Melissa McCarthy PHD DOCTOR OF PHYSICAL SCIENCES University College Cork Atomic layer deposition of photovoltaics
Louise Ryan PHD DOCTOR OF PHYSICAL SCIENCES University College Cork Atomic Layer Deposition of Metal Oxides for Photovoltaic Applications
Adrian Walsh PHD DOCTOR OF PHYSICAL SCIENCES UCC Electrical characterisation of emerging photo anodes suited to water dissociation with an applied bias 
Abulaiti Hairisha PHD UCC Synthesis, Modelling and Deposition of Organic Thin Films
Barry Hutchinson PHD UCC An investiagtion of high-k materials in metal insulator metal capacitors
John Mullins PHD UCC Atomic Layer Depostion and Charcaterisation of Advanced CMOS Strucutres on III-V Substrates
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