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Research Interests
Research Grants
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Enterprise Irl | 01-JAN-09 | 30-SEP-12 | EI – Epitaxial Nanostructured GaAs on Si for Next Generation Electronics | Principal Investigator |
Publications
Peer Reviewed Journals
| Year | Journal | Publication |
|---|---|---|
| 2014 | Functional Nanomaterials And Devices Viifunctional Nanomaterials And Devices Vii | On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs Rudenko, T.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G.,Nazarov, A. N. (2014) On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs. : . |
| 2013 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors Miranda, E. and Jiménez, D. and Suñé, J. and O’Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . |
| 2013 | Solid-State Electronics | Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara, MA,Djara, V,O’Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O’Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : . |
| 2013 | Microelectronic Engineeringmicroelectronic Engineering | Electron mobility in heavily doped junctionless nanowire SOI MOSFETs Rudenko, T.,Nazarov, A.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G. (2013) Electron mobility in heavily doped junctionless nanowire SOI MOSFETs. : . |
| 2013 | Microelectronic Engineering | Electrically active interface defects in the In0.53Ga0.47As MOS system Djara, V., O’Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O’Connor, É., Povey, I.M., O’Connell, D., Pemble, M.E., Hurley, P.K. (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : . |
| 2013 | Journal of Applied Physics | An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O’Connor, É., Power, M., Hurley, P.K. (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . |
| 2013 | Journal of Applied Physics | An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O’Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . |
| 2013 | IEEE Transactions on Device and Materials Reliability | The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System Hurley, PK,O’Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . |
| 2013 | Microelectronic Engineering | Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, ‘E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system. : . |
| 2013 | ECS Transactions | Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O’Connor, ‘E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : . |
| 2013 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors Monaghan, S. and O’Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : . |
| 2013 | Journal of Vacuum Science & Technology B | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors Miranda, E,Jimenez, D,Sune, J,O’Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . |
| 2012 | Microelectronic Engineering | The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O’Connor, E. and O’Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : . |
| 2012 | Semiconductor Science and Technology | On the activation of implanted silicon ions in p-In0.53Ga0.47As Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O’Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . |
| 2012 | Journal of the Electrochemical Society | Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : . |
| 2012 | Semiconductor Science and Technology | On the activation of implanted silicon ions in p-In0.53Ga0.47As Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O’Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . |
| 2012 | Applied Physics Letters | Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B (2012) Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation. : . |
| 2012 | Journal of the Electrochemical Society | Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)) Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : . |
| 2012 | Electrochemical Society Transactions | Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics? Cherkaoui, K., Djara, V., O’Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : . |
| 2012 | IEEE Transactions On Electron Devices | Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O’Connor, É. and Povey, I.M. and O’Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : . |
| 2011 | Journal of Vacuum Science & Technology B | Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer Monaghan, S. and O’Mahony, A. and Cherkaoui, K. and O’Connor, E. and Povey, I. M. and Nolan, M. G. and O’Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : . |
| 2011 | Electrochemical Society Transactions | Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric O’Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : . |
| 2011 | Microelectronic Engineering | The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O’Connor, E.,Petkov, N.,Schmidt, M.,O’Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : . |
| 2011 | Microelectronic Engineering | Transport and interface states in high-κ LaSiO x dielectric Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) Transport and interface states in high-κ LaSiO x dielectric. : . |
| 2011 | Journal of Applied Physics | A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers O’Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : . |
| 2011 | Journal of Vacuum Science & Technology B | Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer Monaghan, S,O’Mahony, A,Cherkaoui, K,O’Connor, E,Povey, IM,Nolan, MG,O’Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . |
| 2011 | Microelectronic Engineering | The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others (2011) The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system. : . |
| 2011 | Advanced Materials Research | Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : . |
| 2011 | Applied Physics Letters | Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment O’Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : . |
| 2011 | Microelectronic Engineering | Multi-technique characterisation of MOVPE-grown GaAs on Si Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . |
| 2011 | Microelectronic Engineering | Investigation of bulk defects in amorphous and crystalline HfO2 thin films Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . |
| 2011 | Journal of Applied Physics | A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers O’Connor, ‘E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : . |
| 2010 | Applied Physics Letters | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer O’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . |
| 2010 | Applied Physics Letters | Electron energy band alignment at the (100)Si/MgO interface Afanas’ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) Electron energy band alignment at the (100)Si/MgO interface. : . |
| 2010 | Applied Physics Letters | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer O’Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O’Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . |
| 2010 | Electrochemical Society Transactions | Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : . |
| 2009 | Microelectronic Engineering | Degradation Dynamics and Breakdown of MgO Gate Oxides Miranda, E, O’Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O’Connell, D, Hurley, PK; (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : . |
| 2009 | Applied Physics Letters | Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers Miranda, E, O’Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O’Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : . |
| 2009 | Journal of Vacuum Science & Technology B | Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : . |
| 2009 | Applied Physics Letters | Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods O’Connor, E, Monaghan, S, Long, RD, O’Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas’ev, VV, Hurley, PK; (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : . |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications Monaghan, S, Cherkaoui, K, O’Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : . |
| 2009 | Journal of Applied Physics | Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : . |
| 2009 | Solid-State Electronics | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . |
| 2009 | Journal of Applied Physics | Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition Long, RD, O’Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : . |
| 2009 | Applied Physics Letters | Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods O’Connor, E,Monaghan, S,Long, RD,O’Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas’ev, VV,Hurley, PK; (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : . |
| 2009 | Journal of Applied Physics | Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : . |
| 2009 | Applied Physics Letters | Electrical characterization of the soft breakdown failure mode in MgO layers Miranda, E, O’Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O’Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : . |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications Monaghan, S,Cherkaoui, K,O’Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : . |
| 2009 | Microelectronics Reliability | Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks Miranda, E, Martin-Martinez, J, O’Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O’Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : . |
| 2009 | Electrochemical Society Transactions | Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers Miranda, E., O’Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O’Connell, D., Hurley, P.K. (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : . |
| 2009 | Microelectronic Engineering | Degradation dynamics and breakdown of MgO gate oxides Miranda, E. and O’Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O’Connell, D. and Hurley, P.K. (2009) Degradation dynamics and breakdown of MgO gate oxides. : . |
| 2009 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : . |
| 2009 | IEEE Electron Device Letters | TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications Monaghan, S. and Cherkaoui, K. and O’Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : . |
| 2009 | Solid-State Electronics | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . |
| 2008 | Solid-State Electronics | High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : . |
| 2008 | Journal Of Applied Physicsjournal Of Applied Physics | Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O’Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : . |
| 2008 | Applied Physics Letters | In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : . |
| 2008 | Applied Physics Letters | In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric O’Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : . |
| 2008 | Applied Physics Letters | In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric O’Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : . |
| 2008 | Journal of the Electrochemical Society | Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon Hurley, PK,Cherkaoui, K,O’Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : . |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.. : . |
| 2008 | Chem. Phys. Chem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . |
| 2008 | Journal of Material Chemistry | Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : . |
| 2008 | Chemphyschem | Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . |
| 2008 | Journal of the Electrochemical Society | Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon Hurley, PK, Cherkaoui, K, O’Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : . |
| 2008 | Journal of Applied Physics | Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O’Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : . |
| 2008 | Chemphyschem | Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : . |
| 2008 | Applied Physics Letters | In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric O’Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : . |
| 2007 | Microelectronics Reliability | Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : . |
| 2007 | Microelectronics Reliability | Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : . |
| 2004 | Journal of Applied Physics | High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications Ginige, R,Cherkaoui, K,Kwan, VW,Kelleher, C,Corbett, B; (2004) High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications. : . |
| 2002 | Journal of Applied Physics | Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer Cherkaoui, K,Murtagh, ME,Kelly, PV,Crean, GM,Cassette, S,Delage, SL,Bland, SW (2002) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer. : . |
Conference Publications
| Year | Publication |
|---|---|
| 2013 | Device Research Conference (DRC), 2013 71st Annual Djara, V and Cherkaoui, K and Lopez, T and O’Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Device Research Conference (DRC), 2013 71st Annual. : . |
| 2012 | 221st Electrochemical Society Meeting Gity, F; Byun, K; Lee, K; Cherkaoui, K; Hayes, J; Morrison, A. P.; Colinge, C; Corbett, B; (2012) 221st Electrochemical Society Meeting. : . |
| 2012 | 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349 Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O’Connor, É. , Povey, I.M. , O’Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349. : . |
| 2012 | 28th International Conference on Microelectronics – Proceedings (MIEL) 2012, art. no. 6222790 Miranda, E. , Jiménez, D. , Suñé, J. , O’Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) 28th International Conference on Microelectronics – Proceedings (MIEL) 2012, art. no. 6222790. : . |
| 2012 | Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O’Connor, E and Povey, IM and O’Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : . |
| 2012 | 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing – 221st ECS Meeting; Code93682 Cherkaoui, K., Djara, V., O’Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing – 221st ECS Meeting; Code93682. : . |
| 2009 | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695 Miranda, E. , O’connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O’Connell, D. , Hurley, P.K. (2009) Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695. : . |
| 2009 | IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330 Miranda, E. , O’Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O’Connell, D. , Hurley, P.K. (2009) IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330. : . |
| 2008 | 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151 Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151. : . |
| 2006 | 25th International Conference on Microelectronics Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) 25th International Conference on Microelectronics. : . |
Book Chapters
| Year | Publication |
|---|---|
| 2010 | Gate Stacks O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) Gate Stacks. : John Wiley & Sons, Inc.. |
Professional Activities
Committees
- [2008] Technical Committee of the Workshop on Dielectrics in Microelectronics,
Patents
- [2014] WO2014162018-A1 – Three dimensional (3D) complementary metal oxide semiconductor (CMOS) inverter
Education
- [1998] Institut des Sciences Appliquées, Lyon, France – Doctor of Science
Languages
- French
Journal Activities
- J Appl Phys – Referee
- Thin Solid Films – Referee
- Appl Surf Sci – Referee
- IEEE Electron Device Letters – Referee
- IEEE Transactions on Electron Devices – Referee
- J Vac Sci Technol B – Referee
Teaching Activities
Recent Postgraduates
| Student | Degree | Graduation Year | Institution | Thesis |
|---|---|---|---|---|
| Brian Toomey | MSc | 2012 | NUI (UCC) | Erbium doped Hafnium oxide MIM capacitors for DRAM application |
| Eamon O’Connor | PHD | 2015 | UCC | Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors |
| Vladimir Djara | PHD | 2014 | UCC | Development of Inversion-Mode and Junctionless Indium-Gallium-Arsenide MOSFETs |