This website uses cookies Read More Ok

Leader in Integrated ICT Hardware & Systems

Karim Cherkaoui - Senior Staff Researcher

Karim Cherkaoui

Contact

+353 (0)21 2346404
karim.cherkaoui (at) tyndall (dot) ie

  • MNS (Materials and Devices)

Research Grants

  • EI - Epitaxial Nanostructured GaAs on Si for Next Generation Electronics (Enterprise Irl) €372,156.00 (01-JAN-09 / 30-SEP-12)

Books

YearPublication

Peer Reviewed Journals

YearPublication
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
2013 Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : Journal of Vacuum Science & Technology B. [Details]
2013 Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors
Monaghan, S,O'Connor, E,Povey, IM,Sheehan, BJ,Cherkaoui, K,Hutchinson, BJA,Hurley, PK,Ferdousi, F,Rios, R,Kuhn, KJ,Rahman, A (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors. : Journal of Vacuum Science & Technology B. [Details]
2012 Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric
Djara, V,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2012) Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric. : IEEE Transactions On Electron Devices. [Details]
2012 Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation
Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B (2012) Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation. : Applied Physics Letters. [Details]
2012 Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
O'Connor, E,Cherkaoui, K,Monaghan, S,O'Connell, D,Povey, I,Casey, P,Newcomb, SB,Gomeniuk, YY,Provenzano, G,Crupi, F,Hughes, G,Hurley, PK (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : Journal of Applied Physics. [Details]
2012 On the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : Semiconductor Science and Technology. [Details]
2012 Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : Journal of the Electrochemical Society. [Details]
2011 Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : Journal of Vacuum Science & Technology B. [Details]
2011 Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : Journal of Vacuum Science & Technology B. [Details]
2011 A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
O'Connor, E, Brennan, B, Djara, V, Cherkaoui, K, Monaghan, S, Newcomb, SB, Contreras, R, Milojevic, M, Hughes, G, Pemble, ME, Wallace, RM, Hurley, PK (2011) A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers. : Journal of Applied Physics. [Details]
2011 Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors
Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P.K (2011) Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors. : Journal of the Electrochemical Society. [Details]
2011 Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
Benedicto, M, Galiana, B, Molina-Aldareguia, JM, Monaghan, S, Hurley, PK, Cherkaoui, K, Vazquez, L, Tejedor, P (2011) Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application. : Nanoscale Research Letters. [Details]
2011 Transport and interface states in high-kappa LaSiOx dielectric
Gomeniuk, YY,Gomeniuk, YV,Tyagulskii, IP,Tyagulskii, SI,Nazarov, AN,Lysenko, VS,Cherkaoui, K,Monaghan, S,Hurley, PK (2011) Transport and interface states in high-kappa LaSiOx dielectric. : Microelectronic Engineering. [Details]
2011 Investigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : Microelectronic Engineering. [Details]
2011 Investigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : Microelectronic Engineering. [Details]
2011 Multi-technique characterisation of MOVPE-grown GaAs on Si
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : Microelectronic Engineering. [Details]
2010 Electron energy band alignment at the (100)Si/MgO interface
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK (2010) Electron energy band alignment at the (100)Si/MgO interface. : Applied Physics Letters. [Details]
2010 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : Applied Physics Letters. [Details]
2009 Degradation Dynamics and Breakdown of MgO Gate Oxides
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : Microelectronic Engineering. [Details]
2009 Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : Applied Physics Letters. [Details]
2009 Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : Journal of Vacuum Science & Technology B. [Details]
2009 Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : Applied Physics Letters. [Details]
2009 TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : IEEE Electron Device Letters. [Details]
2009 Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : Journal of Applied Physics. [Details]
2009 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : Solid-State Electronics. [Details]
2009 Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : Journal of Applied Physics. [Details]
2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : Applied Physics Letters. [Details]
2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : Applied Physics Letters. [Details]
2009 Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : Journal of Applied Physics. [Details]
2009 TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : IEEE Electron Device Letters. [Details]
2009 Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : Microelectronics Reliability. [Details]
2008 High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : Solid-State Electronics. [Details]
2008 Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : Journal of Applied Physics. [Details]
2008 Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : Chemphyschem. [Details]
2008 In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : Applied Physics Letters. [Details]
2008 Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : Journal of the Electrochemical Society. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
2008 High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi, B,Piscator, J,Engstrom, O,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K,Osten, HJ (2008) High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. : Solid-State Electronics. [Details]
2008 Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : Journal of the Electrochemical Society. [Details]
2008 In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : Applied Physics Letters. [Details]
2007 Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : Microelectronics Reliability. [Details]
2007 Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks
Hurley, PK,Cherkaoui, K,McDonnell, S,Hughes, G,Groenland, AW (2007) Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks. : Microelectronics Reliability. [Details]
2004 High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications
Ginige, R,Cherkaoui, K,Kwan, VW,Kelleher, C,Corbett, B (2004) High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications. : Journal of Applied Physics. [Details]
2009 Electrical characterization of the soft breakdown failure mode in MgO layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : Applied Physics Letters. [Details]
2011 The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : Microelectronic Engineering. [Details]
2007 Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : Microelectronics Reliability. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
2013 Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2013 Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2013 An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : Journal of Applied Physics. [Details]
2013 Electrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : Microelectronic Engineering. [Details]
2012 Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : IEEE Transactions on Electron Devices. [Details]
2012 The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : Microelectronic Engineering. [Details]
2012 Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : Electrochemical Society Transactions. [Details]
2012 Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : Journal of the Electrochemical Society. [Details]
2011 Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : Advanced Materials Research. [Details]
2011 Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : Electrochemical Society Transactions. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : Applied Physics Letters. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : Applied Physics Letters. [Details]
2011 Transport and interface states in high-κ LaSiO x dielectric
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K (2011) Transport and interface states in high-κ LaSiO x dielectric. : Microelectronic Engineering. [Details]
2010 Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : Electrochemical Society Transactions. [Details]
2010 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : Applied Physics Letters. [Details]
2010 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : Applied Physics Letters. [Details]
2009 TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : IEEE Electron Device Letters. [Details]
2009 Degradation dynamics and breakdown of MgO gate oxides
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K (2009) Degradation dynamics and breakdown of MgO gate oxides. : Microelectronic Engineering. [Details]
2009 Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2009 Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : Electrochemical Society Transactions. [Details]
2008 In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : Applied Physics Letters. [Details]
2008 Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : J. Mat. Chem. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chem. Phys. Chem. [Details]
2012 On the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : Semiconductor Science and Technology. [Details]
2011 Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : Journal of Vacuum Science & Technology B. [Details]
2011 A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : Journal of Applied Physics. [Details]
2002 Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
Cherkaoui, K,Murtagh, ME,Kelly, PV,Crean, GM,Cassette, S,Delage, SL,Bland, SW (2002) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer. : Journal of Applied Physics. [Details]
2013 Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : Solid-State Electronics. [Details]
2013 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : IEEE Transactions on Device and Materials Reliability. [Details]
2013 Electrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V,O'Regan, TP,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : Microelectronic Engineering. [Details]
2013 Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects
Rudenko, T,Yu, R,Barraud, S,Cherkaoui, K,Nazarov, A (2013) Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects. : IEEE Electron Device Letters. [Details]
2013 An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : Journal of Applied Physics. [Details]
2013 Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures
Das, S,Yu, R,Cherkaoui, K,Razavi, P,Barraud, S (2013) Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures. : Ecs Solid State Letters. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment
O'Connor, E,Monaghan, S,Cherkaoui, K,Povey, IM,Hurley, PK (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment. : Applied Physics Letters. [Details]
2009 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : Solid-State Electronics. [Details]
2014 On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs
Rudenko, T.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G.,Nazarov, A. N (2014) On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs. : Functional Nanomaterials and Devices Vii. [Details]
2008 In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : Applied Physics Letters. [Details]
2013 Electrically active interface defects in the In< sub> 0.53
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, \'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53. : Microelectronic Engineering. [Details]
2013 Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
Rudenko, T.,Nazarov, A.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G (2013) Electron mobility in heavily doped junctionless nanowire SOI MOSFETs. : Microelectronic Engineering. [Details]
2011 A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
O’Connor, \'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : Journal of Applied Physics. [Details]
2011 The structural and electrical properties of the SrTa< sub> 2
Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others (2011) The structural and electrical properties of the SrTa< sub> 2. : Microelectronic Engineering. [Details]
2008 Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : Journal of Applied Physics. [Details]
2013 Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : ECS Transactions. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication
Year2012 Publication28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K (2012) Spatial statistics for micro/nanoelectronics and materials science. : . [Details]
Year2012 Publication13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K (2012) Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs. : . [Details]
Year2012 Publication221st Electrochemical Society Meeting
Gity, F; Byun, K; Lee, K; Cherkaoui, K; Hayes, J; Morrison, A. P.; Colinge, C; Corbett, B (2012) Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation. : . [Details]
Year2012 Publication5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K (2012) Can metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSFET characteristics? . In: Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS) eds. : . [Details]
Year2006 Publication25th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee (2006) Electrical properties of HfO(2) films formed by ion assisted deposition. 2006. : . [Details]
Year2009 PublicationIEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K (2009) Soft breakdown in MgO dielectric layers. : . [Details]
Year2008 Publication9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A (2008) Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling. : . [Details]
Year2012 PublicationUltimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs. : . [Details]
Year2013 PublicationDevice Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching. : . [Details]
Year2009 PublicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K (2009) Post-breakdown conduction in metal gate/MgO/InP structures. : . [Details]

Patents

  • WO2014162018-A1

Committees

  • Conference organisation, topics/papers selection and reviewing, Technical Committee of the Workshop on Dielectrics in Microelectronics (2008 /)

Education

  • Institut des Sciences Appliquées, Lyon, France , Doctor of Science, Semiconductor Physics (1998)

Journal Activities

  • Referee, J Vac Sci Technol B (-)
  • Referee, Thin Solid Films (-)
  • Referee, Ieee Electron Device Letters (-)
  • Referee, J Appl Phys (-)
  • Referee, Appl Surf Sci (-)
  • Referee, Ieee Transactions On Electron Devices (-)

Recent Postgraduates

  • Brian Toomey (NUI (UCC) MSc) "Erbium doped Hafnium oxide MIM capacitors for DRAM application" (2012)
  • Eamon O'Connor (UCC PHD) "Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors" (2015)
  • Vladimir Djara (UCC PHD) "Development of Inversion-Mode and Junctionless Indium-Gallium-Arsenide MOSFETs" (2014)
Back to top