Leader in Integrated ICT Hardware & Systems
Felipe Murphy-Armando received his primary degree and MSc in Physics from Instituto Balseiro, in Bariloche, Argentina. He completed his PhD in 2007 at Tyndall Institute under the supervision of Prof. Stephen Fahy, and continued there as a post-doc in both the Condensed Matter Theory and Electronics Theory Groups.
He is now a Staff Researcher at Tyndall National Insitute, UCC
| Year | Publication |
|---|---|
| Year | Publication |
|---|---|
| 2015 | Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : ACS applied materials & interfaces. [Details] |
| 2015 | Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Clavel, M,Saladukha, D,Goley, PS,Ochalski, TJ,Murphy-Armando, F,Bodnar, RJ,Hudait, MK (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : Acs Applied Materials & Interfaces. [Details] |
| 2014 | Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current 1. M. Shayesteh, D.O. Connell, F. Gity, P. Murphy-Armando, R. Yu, K. Huet, I. Toque-Tresonne, F. Cristiano, S. Boninelli, H.H. Henrichsen, P.F. Nielsen, D.H. Petersen, R. Duffy (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : IEEE Transactions On Electron Devices. [Details] |
| 2013 | Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers Pavarelli, N and Ochalski, TJ and Murphy-Armando, F and Huo, Y and Schmidt, M and Huyet, G and Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical review letters. [Details] |
| 2013 | Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details] |
| 2013 | Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers pavarelli, n, murphy-armando,f (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details] |
| 2013 | Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers N. Pavarelli, T. J. Ochalski, F. Murphy-Armando, Y. Huo, M. Schmidt, G. Huyet and J. S. Harris (2013) Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers. : Physical Review Letters. [Details] |
| 2012 | First-principles investigation of the alloy scattering potential in dilute Si1-xCx Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : Physical Review B. [Details] |
| 2012 | First-principles investigation of the alloy scattering potential in dilute Si1?xCx Vaughan, MP; F. Murphy-Armando, F; Fahy S (2012) First-principles investigation of the alloy scattering potential in dilute Si1?xCx. : Physical Review B. [Details] |
| 2012 | Giant piezoresistance in silicon-germanium alloys Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : Physical Review B. [Details] |
| 2012 | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011) Murphy-Armando, F,Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : Journal of Applied Physics. [Details] |
| 2011 | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures Murphy-Armando, F,Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details] |
| 2011 | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures Murphy-Armando, F. and Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details] |
| 2011 | First principles calculation of electron-phonon and alloy scattering in strained SiGe Murphy-Armando, F. and Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : Journal of Applied Physics. [Details] |
| 2011 | Effect of strain on the deformation potentials in Ge-like SiGe Murphy-Armando, F,Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : Rna-A Publication of The Rna Society. [Details] |
| 2010 | Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires Murphy-Armando, F,Fagas, G,Greer, JC (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nanoletters. [Details] |
| 2010 | Deformation potentials and electron-phonon coupling in silicon nanowires Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires. : Nanoletters. [Details] |
| 2010 | Deformation Potentials and Electron- Phonon Coupling in Silicon Nanowires Murphy-Armando, F. and Fagas, G. and Greer, JC (2010) Deformation Potentials and Electron- Phonon Coupling in Silicon Nanowires. : Nano letters. [Details] |
| 2010 | Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires Murphy-Armando, F;Fagas, G;Greer, JC (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nanoletters. [Details] |
| 2010 | Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires Murphy-Armando, F.,Fagas, G.,Greer, J. C (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nano Letters. [Details] |
| 2008 | First-Principles Calculation of Carrier-Phonon Scattering In N-Type Si1-Xgex Alloys Murphy-Armando, F, Fahy, S (2008) First-Principles Calculation of Carrier-Phonon Scattering In N-Type Si1-Xgex Alloys. : Physical Review B. [Details] |
| 2007 | First-Principles Calculation of P-Type Alloy Scattering In Si1-Xgex Joyce, S, Murphy-Armando, F, Fahy, S (2007) First-Principles Calculation of P-Type Alloy Scattering In Si1-Xgex. : Physical Review B. [Details] |
| 2006 | First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x Murphy-Armando, F. and Fahy, S (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : Physical Review Letters. [Details] |
| 2004 | Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K (2004) Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : Journal of Physics: Condensed Matter. [Details] |
| Year | Publication |
|---|
| Year | Publication |
|---|---|
| Year2012 | PublicationPiezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain Murphy-Armando, F. and Fahy, S (2012) APS. [Oral Presentation]. : Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain. [Details] |
| Year2008 | PublicationFirst principles calculation of carrier-phonon scattering in Si nanowires Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D (2008) . : First principles calculation of carrier-phonon scattering in Si nanowires. [Details] |
| Year2006 | PublicationHole mobility in SiGe alloys from first principles Joyce, S. and Murphy-Armando, F. and Fahy, S (2006) . : Hole mobility in SiGe alloys from first principles. [Details] |
| Year2006 | PublicationFirst-principles calculation of phonon scattering of n-type carriers in SiGe alloys Murphy Armando, F. and Fahy, S (2006) . : First-principles calculation of phonon scattering of n-type carriers in SiGe alloys. [Details] |
| Year2005 | PublicationFirst-principles calculation of alloy scattering of n-type carriers in SiGe Murphy-Armando, F. and Fahy, S (2005) . : First-principles calculation of alloy scattering of n-type carriers in SiGe. [Details] |