Leader in Integrated ICT Hardware & Systems
Felipe Murphy-Armando is Senior Researcher at the Quantum Modelling Team in the Materials Theory Group in Tyndall National Institute, UCC.
| Year | Publication |
|---|---|
| Year | Publication |
|---|---|
| 2019 | Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces O'Mahony S.;Murphy-Armando F.;Murray É.;Querales-Flores J.;Savic I.;Fahy S (2019) Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces. : Physical Review Letters. [Details] |
| 2019 | Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations Murphy-Armando, F (2019) Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations. : Journal of Applied Physics. [Details] |
| 2018 | Acoustic deformation potentials of n-type PbTe from first principles Murphy, AR;Murphy-Armando, F;Fahy, S;Savic, I (2018) Acoustic deformation potentials of n-type PbTe from first principles. : Physical Review B. [Details] |
| 2018 | Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies Saladukha, Dzianis; Clavel, M. B.; Murphy-Armando, Felipe; Greene-Diniz, Gabriel; Grüning, M.; Hudait, Mantu; Ochalski, Tomasz J (2018) Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies. : Physical Review B. [Details] |
| 2015 | Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : ACS applied materials & interfaces. [Details] |
| 2014 | Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : IEEE Transactions On Electron Devices. [Details] |
| 2013 | Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details] |
| 2012 | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011) Murphy-Armando, F;Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : Journal of Applied Physics. [Details] |
| 2012 | Giant piezoresistance in silicon-germanium alloys Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : Physical Review B. [Details] |
| 2012 | First-principles investigation of the alloy scattering potential in dilute Si1-xCx Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : Physical Review B. [Details] |
| 2011 | Effect of strain on the deformation potentials in Ge-like SiGe Murphy-Armando, F;Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : Chinese Journal Of Physics. [Details] |
| 2011 | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures Murphy-Armando, F;Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details] |
| 2011 | First principles calculation of electron-phonon and alloy scattering in strained SiGe Murphy-Armando, F;Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : Journal of Applied Physics. [Details] |
| 2010 | Deformation potentials and electron-phonon coupling in silicon nanowires Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires. : Nanoletters. [Details] |
| 2008 | First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys Murphy-Armando, F;Fahy, S (2008) First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys. : Physical Review B. [Details] |
| 2007 | First-principles calculation of p-type alloy scattering in Si1-xGex Joyce, S;Murphy-Armando, F;Fahy, S (2007) First-principles calculation of p-type alloy scattering in Si1-xGex. : Physical Review B. [Details] |
| 2006 | First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x Murphy-Armando, F. and Fahy, S (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : Physical Review Letters. [Details] |
| 2004 | Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K (2004) Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : Journal of Physics: Condensed Matter. [Details] |
| Year | Publication |
|---|
| Year | Publication |
|---|---|
| Year2016 | PublicationProc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII Hudait, Mantu; Clavel, M.; Lester, L.; Saladukha, Dzianis; Ochalski, Tomasz.Murphy-Armando, Felipe (2016) Heterogeneously grown tunable group-IV laser on silicon . In: Razeghi, Manijeh eds. : . [Details] |
| Year2016 | PublicationPushing the limits of silicon transistors Saladukha, D,Ochalski, TJ,Murphy-Armando, F,Clavel, MB,Hudait, MK,Witzigmann, B,Osinski, M,Arakawa, Y (2016) PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIV. : . [Details] |
| Year2016 | Publication2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) Mind the drain from strain: effects of strain on the leakage current of Si diodes. : . [Details] |
| Year2014 | PublicationProceedings of the International Conference on Ion Implantation Technology Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios. : . [Details] |
| Year2014 | Publication2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios. : . [Details] |
| Year2014 | PublicationLaser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014). : . [Details] |
| Year2012 | PublicationUltimate Integration on Silicon (ULIS), 2012 13th International Conference on Murphy-Armando, F. and Fahy, S (2012) Very large piezoresistance in Si 1- x Ge x alloys. : . [Details] |
| Year2012 | Publication2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 Murphy-Armando F.;Fahy S (2012) Very large piezoresistance in Si 1-xGe x alloys. : . [Details] |
| Year2011 | Publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Vaughan M.;Murphy-Armando F.;Fahy S (2011) Alloy scattering of substitutional carbon in silicon: A first principles approach. : . [Details] |
| Year2011 | Publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Murphy-Armando F.;Fahy S (2011) Giant mobility enhancement in highly strained, direct gap Ge. : . [Details] |
| Year2011 | PublicationUltimate Integration on Silicon (ULIS), 2011 12th International Conference on Vaughan, MP and Murphy-Armando, F. and Fahy, S (2011) Alloy scattering of substitutional carbon in silicon: a first principles approach. : . [Details] |
| Year2011 | PublicationUltimate Integration on Silicon (ULIS), 2011 12th International Conference on Murphy-Armando, F. and Fahy, S (2011) Giant mobility enhancement in highly strained, direct gap Ge. : . [Details] |
| Year2012 | PublicationPiezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain Murphy-Armando, F. and Fahy, S (2012) APS. [Oral Presentation]. : Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain. [Details] |
| Year2008 | PublicationFirst principles calculation of carrier-phonon scattering in Si nanowires Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D (2008) . : First principles calculation of carrier-phonon scattering in Si nanowires. [Details] |
| Year2006 | PublicationHole mobility in SiGe alloys from first principles Joyce, S. and Murphy-Armando, F. and Fahy, S (2006) . : Hole mobility in SiGe alloys from first principles. [Details] |
| Year2006 | PublicationFirst-principles calculation of phonon scattering of n-type carriers in SiGe alloys Murphy Armando, F. and Fahy, S (2006) . : First-principles calculation of phonon scattering of n-type carriers in SiGe alloys. [Details] |
| Year2005 | PublicationFirst-principles calculation of alloy scattering of n-type carriers in SiGe Murphy-Armando, F. and Fahy, S (2005) . : First-principles calculation of alloy scattering of n-type carriers in SiGe. [Details] |