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Leader in Integrated ICT Hardware & Systems

Philip Murphy -

  • MNS (Materials and Devices)

Felipe Murphy-Armando is Senior Researcher at the Quantum Modelling Team in the Materials Theory Group in Tyndall National Institute, UCC.

  • I am interested on the effects of electron scattering on the transport, thermoelectric and optical properties of materials.
  • Felipe's research interests are

Research Grants

  • Orbitron: Spin, charge and light polarisation control and characterisation of CMOS compatible light sources - Leaner Future Networks. (Science Foundation of Ireland) €519,202.00 (31-MAY-20 / 31-MAY-24)

Books

YearPublication

Peer Reviewed Journals

YearPublication
2019 Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces
O'Mahony S.;Murphy-Armando F.;Murray É.;Querales-Flores J.;Savic I.;Fahy S (2019) Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces. : Physical Review Letters. [Details]
2019 Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations
Murphy-Armando, F (2019) Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations. : Journal of Applied Physics. [Details]
2018 Acoustic deformation potentials of n-type PbTe from first principles
Murphy, AR;Murphy-Armando, F;Fahy, S;Savic, I (2018) Acoustic deformation potentials of n-type PbTe from first principles. : Physical Review B. [Details]
2018 Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies
Saladukha, Dzianis; Clavel, M. B.; Murphy-Armando, Felipe; Greene-Diniz, Gabriel; Grüning, M.; Hudait, Mantu; Ochalski, Tomasz J (2018) Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies. : Physical Review B. [Details]
2015 Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices
Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : ACS applied materials & interfaces. [Details]
2014 Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : IEEE Transactions On Electron Devices. [Details]
2013 Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers
Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details]
2012 Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011)
Murphy-Armando, F;Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : Journal of Applied Physics. [Details]
2012 Giant piezoresistance in silicon-germanium alloys
Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : Physical Review B. [Details]
2012 First-principles investigation of the alloy scattering potential in dilute Si1-xCx
Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : Physical Review B. [Details]
2011 Effect of strain on the deformation potentials in Ge-like SiGe
Murphy-Armando, F;Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : Chinese Journal Of Physics. [Details]
2011 Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures
Murphy-Armando, F;Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details]
2011 First principles calculation of electron-phonon and alloy scattering in strained SiGe
Murphy-Armando, F;Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : Journal of Applied Physics. [Details]
2010 Deformation potentials and electron-phonon coupling in silicon nanowires
Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires. : Nanoletters. [Details]
2008 First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys
Murphy-Armando, F;Fahy, S (2008) First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys. : Physical Review B. [Details]
2007 First-principles calculation of p-type alloy scattering in Si1-xGex
Joyce, S;Murphy-Armando, F;Fahy, S (2007) First-principles calculation of p-type alloy scattering in Si1-xGex. : Physical Review B. [Details]
2006 First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x
Murphy-Armando, F. and Fahy, S (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : Physical Review Letters. [Details]
2004 Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes
De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K (2004) Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : Journal of Physics: Condensed Matter. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication
Year2016 PublicationProc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
Hudait, Mantu; Clavel, M.; Lester, L.; Saladukha, Dzianis; Ochalski, Tomasz.Murphy-Armando, Felipe (2016) Heterogeneously grown tunable group-IV laser on silicon . In: Razeghi, Manijeh eds. : . [Details]
Year2016 PublicationPushing the limits of silicon transistors
Saladukha, D,Ochalski, TJ,Murphy-Armando, F,Clavel, MB,Hudait, MK,Witzigmann, B,Osinski, M,Arakawa, Y (2016) PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIV. : . [Details]
Year2016 Publication2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) Mind the drain from strain: effects of strain on the leakage current of Si diodes. : . [Details]
Year2014 PublicationProceedings of the International Conference on Ion Implantation Technology
Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios. : . [Details]
Year2014 Publication2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014)
Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios. : . [Details]
Year2014 PublicationLaser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios
Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014). : . [Details]
Year2012 PublicationUltimate Integration on Silicon (ULIS), 2012 13th International Conference on
Murphy-Armando, F. and Fahy, S (2012) Very large piezoresistance in Si 1- x Ge x alloys. : . [Details]
Year2012 Publication2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Murphy-Armando F.;Fahy S (2012) Very large piezoresistance in Si 1-xGe x alloys. : . [Details]
Year2011 Publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Vaughan M.;Murphy-Armando F.;Fahy S (2011) Alloy scattering of substitutional carbon in silicon: A first principles approach. : . [Details]
Year2011 Publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Murphy-Armando F.;Fahy S (2011) Giant mobility enhancement in highly strained, direct gap Ge. : . [Details]
Year2011 PublicationUltimate Integration on Silicon (ULIS), 2011 12th International Conference on
Vaughan, MP and Murphy-Armando, F. and Fahy, S (2011) Alloy scattering of substitutional carbon in silicon: a first principles approach. : . [Details]
Year2011 PublicationUltimate Integration on Silicon (ULIS), 2011 12th International Conference on
Murphy-Armando, F. and Fahy, S (2011) Giant mobility enhancement in highly strained, direct gap Ge. : . [Details]
Year2012 PublicationPiezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain
Murphy-Armando, F. and Fahy, S (2012) APS. [Oral Presentation]. : Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain. [Details]
Year2008 PublicationFirst principles calculation of carrier-phonon scattering in Si nanowires
Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D (2008) . : First principles calculation of carrier-phonon scattering in Si nanowires. [Details]
Year2006 PublicationHole mobility in SiGe alloys from first principles
Joyce, S. and Murphy-Armando, F. and Fahy, S (2006) . : Hole mobility in SiGe alloys from first principles. [Details]
Year2006 PublicationFirst-principles calculation of phonon scattering of n-type carriers in SiGe alloys
Murphy Armando, F. and Fahy, S (2006) . : First-principles calculation of phonon scattering of n-type carriers in SiGe alloys. [Details]
Year2005 PublicationFirst-principles calculation of alloy scattering of n-type carriers in SiGe
Murphy-Armando, F. and Fahy, S (2005) . : First-principles calculation of alloy scattering of n-type carriers in SiGe. [Details]

Committees

  • Representative for TMD centre, Safety Committee (/)

Teaching Interests

  • 2015 - Present, Condensed Matter Physics (PY3105)
  • 2014-  Present, Nanoelectronics (UE6005)

Internal Collaborators

  • Tomasz Ochalski , Tyndall National Insitute (IRELAND )
  • Ray Duffy , Tyndall National Insitute (IRELAND )
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