2019 |
Journal of Applied Physics |
Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations Murphy-Armando, F (2019) Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations. : . |
2019 |
Physical Review Letters |
Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces O’Mahony S.;Murphy-Armando F.;Murray É.;Querales-Flores J.;Savić I.;Fahy S. (2019) Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces. : . |
2018 |
Physical Review B |
Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies Saladukha, Dzianis; Clavel, M. B.; Murphy-Armando, Felipe; Greene-Diniz, Gabriel; Grüning, M.; Hudait, Mantu; Ochalski, Tomasz J. (2018) Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies. : . |
2018 |
Physical Review B |
Acoustic deformation potentials of n-type PbTe from first principles Murphy, AR;Murphy-Armando, F;Fahy, S;Savic, I (2018) Acoustic deformation potentials of n-type PbTe from first principles. : AMER PHYSICAL SOC. |
2015 |
ACS applied materials & interfaces |
Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : . |
2014 |
IEEE Transactions On Electron Devices |
Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Shayesteh, M,O’ Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : . |
2013 |
Physical Review Letters |
Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : . |
2012 |
Journal of Applied Physics |
Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011) Murphy-Armando, F;Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : AMER INST PHYSICS. |
2012 |
Physical Review B |
Giant piezoresistance in silicon-germanium alloys Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : . |
2012 |
Physical Review B |
First-principles investigation of the alloy scattering potential in dilute Si1-xCx Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : . |
2011 |
Journal of Applied Physics |
First principles calculation of electron-phonon and alloy scattering in strained SiGe Murphy-Armando, F;Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : AMER INST PHYSICS. |
2011 |
Chinese Journal Of Physics |
Effect of strain on the deformation potentials in Ge-like SiGe Murphy-Armando, F;Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : PHYSICAL SOC REPUBLIC CHINA. |
2011 |
Journal of Applied Physics |
Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures Murphy-Armando, F;Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : AMER INST PHYSICS. |
2010 |
Nanoletters |
Deformation potentials and electron-phonon coupling in silicon nanowires. Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires.. : . |
2008 |
Physical Review B |
First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys Murphy-Armando, F;Fahy, S (2008) First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys. : AMER PHYSICAL SOC. |
2007 |
Physical Review B |
First-principles calculation of p-type alloy scattering in Si1-xGex Joyce, S;Murphy-Armando, F;Fahy, S (2007) First-principles calculation of p-type alloy scattering in Si1-xGex. : AMERICAN PHYSICAL SOC. |
2006 |
Physical Review Letters |
First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x Murphy-Armando, F. and Fahy, S.; (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : . |
2004 |
Journal of Physics: Condensed Matter |
Spin–orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K. (2004) Spin–orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : . |