Leader in Integrated ICT Hardware & Systems
I am interested on the effects of electron scattering on the transport, thermoelectric and optical properties of materials.
Felipe's research interests are
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Science Foundation of Ireland | 31-MAY-20 | 31-MAY-24 | Orbitron: Spin, charge and light polarisation control and characterisation of CMOS compatible light sources - Leaner Future Networks. | Principal Investigator |
| Company | Country | Name |
|---|---|---|
| Tyndall National Insitute | IRELAND | Ray Duffy |
| Tyndall National Insitute | IRELAND | Tomasz Ochalski |
| Year | Journal | Publication |
|---|---|---|
| 2019 | Physical Review Letters | Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces O'Mahony S.;Murphy-Armando F.;Murray É.;Querales-Flores J.;Savić I.;Fahy S. (2019) Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces. : . [Details] |
| 2019 | Journal of Applied Physics | Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations Murphy-Armando, F (2019) Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations. : . [Details] |
| 2018 | Physical Review B | Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies Saladukha, Dzianis; Clavel, M. B.; Murphy-Armando, Felipe; Greene-Diniz, Gabriel; Grüning, M.; Hudait, Mantu; Ochalski, Tomasz J. (2018) Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies. : . [Details] |
| 2018 | Physical Review B | Acoustic deformation potentials of n-type PbTe from first principles Murphy, AR;Murphy-Armando, F;Fahy, S;Savic, I (2018) Acoustic deformation potentials of n-type PbTe from first principles. : AMER PHYSICAL SOC. [Details] |
| 2015 | ACS applied materials & interfaces | Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : . [Details] |
| 2014 | IEEE Transactions On Electron Devices | Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : . [Details] |
| 2013 | Physical Review Letters | Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : . [Details] |
| 2012 | Physical Review B | Giant piezoresistance in silicon-germanium alloys Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : . [Details] |
| 2012 | Physical Review B | First-principles investigation of the alloy scattering potential in dilute Si1-xCx Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : . [Details] |
| 2012 | Journal of Applied Physics | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011) Murphy-Armando, F;Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : AMER INST PHYSICS. [Details] |
| 2011 | Journal of Applied Physics | Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures Murphy-Armando, F;Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : AMER INST PHYSICS. [Details] |
| 2011 | Journal of Applied Physics | First principles calculation of electron-phonon and alloy scattering in strained SiGe Murphy-Armando, F;Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : AMER INST PHYSICS. [Details] |
| 2011 | Chinese Journal Of Physics | Effect of strain on the deformation potentials in Ge-like SiGe Murphy-Armando, F;Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : PHYSICAL SOC REPUBLIC CHINA. |
| 2010 | Nanoletters | Deformation potentials and electron-phonon coupling in silicon nanowires. Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires.. : . [Details] |
| 2008 | Physical Review B | First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys Murphy-Armando, F;Fahy, S (2008) First-principles calculation of carrier-phonon scattering in n-type Si1-xGex alloys. : AMER PHYSICAL SOC. [Details] |
| 2007 | Physical Review B | First-principles calculation of p-type alloy scattering in Si1-xGex Joyce, S;Murphy-Armando, F;Fahy, S (2007) First-principles calculation of p-type alloy scattering in Si1-xGex. : AMERICAN PHYSICAL SOC. [Details] |
| 2006 | Physical Review Letters | First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x Murphy-Armando, F. and Fahy, S.; (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : . [Details] |
| 2004 | Journal of Physics: Condensed Matter | Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K. (2004) Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : . |
| Year | Publication |
|---|---|
| 2016 | Pushing the limits of silicon transistors Saladukha, D,Ochalski, TJ,Murphy-Armando, F,Clavel, MB,Hudait, MK,Witzigmann, B,Osinski, M,Arakawa, Y (2016) Pushing the limits of silicon transistors. : . [Details] |
| 2016 | Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII Hudait, Mantu; Clavel, M.; Lester, L.; Saladukha, Dzianis; Ochalski, Tomasz.Murphy-Armando, Felipe. (2016) Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII. : . [Details] |
| 2016 | 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). : IEEE. |
| 2014 | 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014). : IEEE. |
| 2014 | Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R, (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios. : . |
| 2014 | Proceedings of the International Conference on Ion Implantation Technology Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Proceedings of the International Conference on Ion Implantation Technology. : . [Details] |
| 2012 | Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on Murphy-Armando, F. and Fahy, S. (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : . |
| 2012 | 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 Murphy-Armando F.;Fahy S. (2012) 2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012. : . [Details] |
| 2011 | 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Vaughan M.;Murphy-Armando F.;Fahy S. (2011) 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011. : . [Details] |
| 2011 | 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 Murphy-Armando F.;Fahy S. (2011) 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011. : . [Details] |
| 2011 | Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on Murphy-Armando, F. and Fahy, S. (2011) Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on. : . |
| 2011 | Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on Vaughan, MP and Murphy-Armando, F. and Fahy, S. (2011) Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on. : . |
| Year | Publication |
|---|---|
| 2012 | Piezo-resistance in $ n $-type Si $ _ $$1-x$$ $ Ge $ _x $ alloys as a function of alloy composition and strain Murphy-Armando, F. and Fahy, S. (2012) Piezo-resistance in $ n $-type Si $ _ $$1-x$$ $ Ge $ _x $ alloys as a function of alloy composition and strain. : . |
| 2008 | First principles calculation of carrier-phonon scattering in Si nanowires Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D. (2008) First principles calculation of carrier-phonon scattering in Si nanowires. : . |
| 2006 | Hole mobility in SiGe alloys from first principles. Joyce, S. and Murphy-Armando, F. and Fahy, S. (2006) Hole mobility in SiGe alloys from first principles.. : . |
| 2006 | First-principles calculation of phonon scattering of n-type carriers in SiGe alloys Murphy Armando, F. and Fahy, S. (2006) First-principles calculation of phonon scattering of n-type carriers in SiGe alloys. : . |
| 2005 | First-principles calculation of alloy scattering of n-type carriers in SiGe Murphy-Armando, F. and Fahy, S. (2005) First-principles calculation of alloy scattering of n-type carriers in SiGe. : . |
2015 - Present, Condensed Matter Physics (PY3105)
2014- Present, Nanoelectronics (UE6005)