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Philip Murphy - Staff Researcher

  • MNS (Materials and Devices)

Felipe Murphy-Armando received his primary degree and MSc in Physics from Instituto Balseiro, in Bariloche, Argentina. He completed his PhD in 2007 at Tyndall Institute under the supervision of Prof. Stephen Fahy, and continued there as a post-doc in both the Condensed Matter Theory and Electronics Theory Groups.

He is now a Staff Researcher at Tyndall National Insitute, UCC

  • I am interested on the effects of electron scattering on the transport, thermoelectric and optical properties of materials.
  • Felipe's research interests are

Books

YearPublication

Peer Reviewed Journals

YearPublication
2015 Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices
Michael Clavel, Dzianis Saladukha, Patrick S Goley, Tomasz J Ochalski, Felipe Murphy-Armando, Robert J Bodnar, Mantu K Hudait (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : ACS applied materials & interfaces. [Details]
2015 Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices
Clavel, M,Saladukha, D,Goley, PS,Ochalski, TJ,Murphy-Armando, F,Bodnar, RJ,Hudait, MK (2015) Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices. : Acs Applied Materials & Interfaces. [Details]
2014 Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
1. M. Shayesteh, D.O. Connell, F. Gity, P. Murphy-Armando, R. Yu, K. Huet, I. Toque-Tresonne, F. Cristiano, S. Boninelli, H.H. Henrichsen, P.F. Nielsen, D.H. Petersen, R. Duffy (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : IEEE Transactions On Electron Devices. [Details]
2013 Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers
Pavarelli, N and Ochalski, TJ and Murphy-Armando, F and Huo, Y and Schmidt, M and Huyet, G and Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical review letters. [Details]
2013 Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers
Pavarelli, N,Ochalski, TJ,Murphy-Armando, F,Huo, Y,Schmidt, M,Huyet, G,Harris, JS (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details]
2013 Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers
pavarelli, n, murphy-armando,f (2013) Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers. : Physical Review Letters. [Details]
2013 Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers
N. Pavarelli, T. J. Ochalski, F. Murphy-Armando, Y. Huo, M. Schmidt, G. Huyet and J. S. Harris (2013) Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers. : Physical Review Letters. [Details]
2012 First-principles investigation of the alloy scattering potential in dilute Si1-xCx
Vaughan, MP,Murphy-Armando, F,Fahy, S (2012) First-principles investigation of the alloy scattering potential in dilute Si1-xCx. : Physical Review B. [Details]
2012 First-principles investigation of the alloy scattering potential in dilute Si1?xCx
Vaughan, MP; F. Murphy-Armando, F; Fahy S (2012) First-principles investigation of the alloy scattering potential in dilute Si1?xCx. : Physical Review B. [Details]
2012 Giant piezoresistance in silicon-germanium alloys
Murphy-Armando, F,Fahy, S (2012) Giant piezoresistance in silicon-germanium alloys. : Physical Review B. [Details]
2012 Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011)
Murphy-Armando, F,Fahy, S (2012) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures (vol 109, 113703, 2011). : Journal of Applied Physics. [Details]
2011 Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures
Murphy-Armando, F,Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details]
2011 Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures
Murphy-Armando, F. and Fahy, S (2011) Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures. : Journal of Applied Physics. [Details]
2011 First principles calculation of electron-phonon and alloy scattering in strained SiGe
Murphy-Armando, F. and Fahy, S (2011) First principles calculation of electron-phonon and alloy scattering in strained SiGe. : Journal of Applied Physics. [Details]
2011 Effect of strain on the deformation potentials in Ge-like SiGe
Murphy-Armando, F,Fahy, S (2011) Effect of strain on the deformation potentials in Ge-like SiGe. : Rna-A Publication of The Rna Society. [Details]
2010 Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
Murphy-Armando, F,Fagas, G,Greer, JC (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nanoletters. [Details]
2010 Deformation potentials and electron-phonon coupling in silicon nanowires
Murphy-Armando F, Fagas G, Greer JC (2010) Deformation potentials and electron-phonon coupling in silicon nanowires. : Nanoletters. [Details]
2010 Deformation Potentials and Electron- Phonon Coupling in Silicon Nanowires
Murphy-Armando, F. and Fagas, G. and Greer, JC (2010) Deformation Potentials and Electron- Phonon Coupling in Silicon Nanowires. : Nano letters. [Details]
2010 Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
Murphy-Armando, F;Fagas, G;Greer, JC (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nanoletters. [Details]
2010 Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
Murphy-Armando, F.,Fagas, G.,Greer, J. C (2010) Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires. : Nano Letters. [Details]
2008 First-Principles Calculation of Carrier-Phonon Scattering In N-Type Si1-Xgex Alloys
Murphy-Armando, F, Fahy, S (2008) First-Principles Calculation of Carrier-Phonon Scattering In N-Type Si1-Xgex Alloys. : Physical Review B. [Details]
2007 First-Principles Calculation of P-Type Alloy Scattering In Si1-Xgex
Joyce, S, Murphy-Armando, F, Fahy, S (2007) First-Principles Calculation of P-Type Alloy Scattering In Si1-Xgex. : Physical Review B. [Details]
2006 First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x
Murphy-Armando, F. and Fahy, S (2006) First-Principles Calculation of Alloy Scattering in Ge_xSi_1-x. : Physical Review Letters. [Details]
2004 Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes
De Martino, A. and Egger, R. and Murphy-Armando, F. and Hallberg, K (2004) Spin--orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes. : Journal of Physics: Condensed Matter. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication
Year2012 PublicationPiezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain
Murphy-Armando, F. and Fahy, S (2012) APS. [Oral Presentation]. : Piezo-resistance in $ n $-type Si $ \_ $$1-x$\$ $ Ge $ \_x $ alloys as a function of alloy composition and strain. [Details]
Year2008 PublicationFirst principles calculation of carrier-phonon scattering in Si nanowires
Murphy-Armando, F. and McEniry, E.J. and Todorov, T.N. and Dundas, D (2008) . : First principles calculation of carrier-phonon scattering in Si nanowires. [Details]
Year2006 PublicationHole mobility in SiGe alloys from first principles
Joyce, S. and Murphy-Armando, F. and Fahy, S (2006) . : Hole mobility in SiGe alloys from first principles. [Details]
Year2006 PublicationFirst-principles calculation of phonon scattering of n-type carriers in SiGe alloys
Murphy Armando, F. and Fahy, S (2006) . : First-principles calculation of phonon scattering of n-type carriers in SiGe alloys. [Details]
Year2005 PublicationFirst-principles calculation of alloy scattering of n-type carriers in SiGe
Murphy-Armando, F. and Fahy, S (2005) . : First-principles calculation of alloy scattering of n-type carriers in SiGe. [Details]

Teaching Interests

  • Condensed Matter Physics (PY3105)
  • Nanoelectronics (UE6005)

Internal Collaborators

  • Tomasz Ochalski , Tyndall National Insitute (IRELAND )
  • Ray Duffy , Tyndall National Insitute (IRELAND )
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