Stefan Schulz

Photonics

Stefan is Lecturer in the School of Physics, University College, and leading the Photonics Theory Group at the Tyndall National Institute. He obtained is Diploma and PhD (Dr. rer. nat.) from the University of Bremen, Germany. His research interests are in the realm of condensed matter theory.

Contact Us

"*" indicates required fields

This field is hidden when viewing the form

Research Interests

Research Grants

Funder Start Date End Date Title Role
Alexander Von Humboldt Foundation 01-MAY-08 30-NOV-08 Feodor-Lynen Postdoctoral Research Fellowship
Irish Research Council 01-DEC-08 30-NOV-10 IRCSET Embark Initiative Postdoctoral Fellowship
Science Foundation Ireland 01-SEP-14 31-AUG-18 SFI Starting Investigator Research Grant
Royal Irish Academy (RIA) 01-APR-16 30-MAR-18 Royal Irish Academy/Royal Society International Exchange Cost Share Agreement 2016 Principal Investigator

Research Collaborators

Company Country Name
University of Cambridge ENGLAND Rachel A. Oliver
University of Cambridge ENGLAND Colin J. Humphreys
Tyndall National Institute IRELAND Eoin P. O’Reilly
Tyndall National Institute IRELAND Brian Corbett
Tyndall National Institute IRELAND Peter J. Parbrook
University of Strathclyde SCOTLAND Robert W. Martin
University of Bremen GERMANY Gerd Czycholl
University of Bremen GERMANY Frank Jahnke
The University of Manchester ENGLAND Philip Dawson
Paul Drude Institute GERMANY Oliver Marquardt
University of Oxford ENGLAND Robert Taylor

Publications

Book Chapters

Year Publication
2017 Electronic Band Structure
S. Schulz, E. P. O’Reilly (2017) Electronic Band Structure. : Taylor & Francis Books.
2014 Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
Eoin P O’Reilly, Oliver Marquardt, Stefan Schulz and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing.
2014 Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules
S. Schulz and E. P. O’Reilly (2014) Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules. : Springer.

Conference Contributions

Year Publication
2016 Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures
Stefan Schulz (2016) Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures. : .
2016 Research Seminar at Technical University Berlin
Stefan Schulz (2016) Research Seminar at Technical University Berlin. : .
2016 International Workshop on Nitride Semiconductors
Stefan Schulz (2016) International Workshop on Nitride Semiconductors. : .
2016 Graduate Lecture
Stefan Schulz (2016) Graduate Lecture. : .
2016 Research Seminar at Aalto University
Stefan Schulz (2016) Research Seminar at Aalto University . : .
2015 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O’Reilly (2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : .
2014 The International Workshop on Nitride Semiconductors (IWN 2014)
Schulz S.; M. A. Caro; O’Reilly E. P. (2014) The International Workshop on Nitride Semiconductors (IWN 2014). : .
2013 GaN Workshop
Schulz S (2013) GaN Workshop. : .
2012 INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF)
Schulz, S.; Caro M. A., O’Reilly E. P. (2012) INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF). : .
2009 Workshop on “Physics of nitride-based, nanostructured, light emitting devices”
Schulz S (2009) Workshop on “Physics of nitride-based, nanostructured, light emitting devices”. : .

Peer Reviewed Journals

Year Journal Publication
2016 Physica Status Solidi (B) Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations
Daniel P Tanner, Miguel A Caro, Eoin P O’Reilly, Stefan Schulz (2016) Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. : .
2016 RSC Advances Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states
Daniel SP Tanner, Miguel A Caro, Eoin P O’Reilly, Stefan Schulz (2016) Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states. : .
2016 Journal of Applied Physics The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. : .
2016 Physical Review B: Condensed Matter Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
R Benchamekh, S Schulz, EP O’Reilly (2016) Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots. : .
2016 Optical and Quantum Electronics Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties
Patra, S Kanta and Marquardt, O and Schulz, S (2016) Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties. : .
2016 Semiconductor Science and Technology Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content
Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content. : .
2015 Physical Review B Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
Caro, MA;Schulz, S;O’Reilly, EP (2015) Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory. : AMER PHYSICAL SOC.
2015 Semiconductor Science and Technology Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation
Grzegorz Kozlowski, Brian Corbett, Stefan Schulz (2015) Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation. : .
2015 Physical Review B Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Schulz, S;Tanner, DP;O’Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P (2015) Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. : AMER PHYSICAL SOC.
2015 Physica Status Solidi (B) Band gap bowing and optical polarization switching in Al1−xGaxN alloys
Conor Coughlan, Stefan Schulz, Miguel A. Caro, and Eoin P. O’Reilly (2015) Band gap bowing and optical polarization switching in Al1−xGaxN alloys. : .
2015 Physical Review B: Condensed Matter Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
Stefan Schulz, Miguel A. Caro, Conor Coughlan, and Eoin P. O’reilly (2015) Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. : .
2015 Physical Review Aphysical Review A Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems
S Schulz, O Marquardt (2015) Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems. : .
2014 Journal of Physics-Condensed Matter Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Marquardt, O,O’Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : .
2014 Journal of Applied Physics Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. : .
2014 Applied Physics Letters Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
Kozlowski, G,Schulz, S,Corbett, B (2014) Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation. : .
2014 Computational Materials Science A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
Oliver Marquardt, Sixten Boeck, Christoph Freysoldt, Tilmann Hickel, Stefan Schulz, Jörg Neugebauer, Eoin P. O’Reilly (2014) A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. : .
2014 Physica Status Solidi (C) Current Topics in Solid State Physics Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
Schulz S.; M. A. Caro; O’Reilly E. P. (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : .
2013 Applied Physics Express Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O’Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : .
2013 Semiconductor Science and Technology Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O’Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : .
2013 Physical Review B Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
Caro, MA,Schulz, S,O’Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : .
2012 Optical and Quantum Electronics A flexible, plane-wave based multiband k center dot p model
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O’Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : .
2012 Physica Status Solidi (C) Current Topics in Solid State Physics Built-in field control in nitride nanostructures operating in the UV
Caro, M. A.; Schulz, S.; Healy, S. B.; O’Reilly, E. P. (2012) Built-in field control in nitride nanostructures operating in the UV. : .
2012 Physica Status Solidi B-Basic Solid State Physics Effect of alloy fluctuations on the local polarization in nitride nanostructures
Caro, MA,Schulz, S,O’Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : .
2012 Physica Status Solidi B-Basic Solid State Physics Ground state switching in InGaN/GaN quantum dot molecules
Schulz, S,O’Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : .
2011 Physica Status Solidi B-Basic Solid State Physics Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects
Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F (2011) Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects. : .
2011 Physical Review B: Condensed Matter Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
Schulz, S,Caro, MA,O’Reilly, EP,Marquardt, O; (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : .
2011 Physica Status Solidi A-Applications and Materials Science Built-in fields in stacked InGaN/GaN quantum dots
Schulz, S,O’Reilly, EP; (2011) Built-in fields in stacked InGaN/GaN quantum dots. : .
2011 Journal of Applied Physics Built-in field control in alloyed c-plane III-N quantum dots and wells
Caro, MA,Schulz, S,Healy, SB,O’Reilly, EP; (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : .
2010 Physica Status Solidi (C) Current Topics in Solid State Physics Excitonic binding energies in non-polar GaN quantum wells
Schulz, S.; O’Reilly, E. P. (2010) Excitonic binding energies in non-polar GaN quantum wells. : .
2010 Physica Status Solidi (C) Current Topics in Solid State Physics Characterising the degree of polarisation anisotropy in an a-plane GaN film
Badcock, T. J.; Schulz, S.; Moram, M. A.; Kappers, M. J.; Dawson, P.; O’Reilly, E. P.; Humphreys, C. J. (2010) Characterising the degree of polarisation anisotropy in an a-plane GaN film. : .
2010 Physica Status Solidi (C) Current Topics in Solid State Physics Built-in fields in non-polar In(x)Ga(1-x)N quantum dots
Schulz, S.; O’Reilly, E. P. (2010) Built-in fields in non-polar In(x)Ga(1-x)N quantum dots. : .
2010 Physical Review B: Condensed Matter Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O’Reilly, EP; (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : .
2009 Physical Review B: Rapid Communications Polarization fields in nitride-based quantum dots grown on nonpolar substrates
Schulz, S,Berube, A,O’Reilly, EP (2009) Polarization fields in nitride-based quantum dots grown on nonpolar substrates. : .
2009 IEEE Journal of Selected Topics In Quantum Electronics Theory of Gan Quantum Dots For Optical Applications
Williams, DP, Schulz, S, Andreev, AD, O’Reilly, EP; (2009) Theory of Gan Quantum Dots For Optical Applications. : .
2009 Applied Physics Letters Excitation-induced energy shifts in the optical gain spectra of InN quantum dots
Lorke, M,Seebeck, J,Gartner, P,Jahnke, F,Schulz, S (2009) Excitation-induced energy shifts in the optical gain spectra of InN quantum dots. : .
2008 The European Physical Journal B Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
Schulz, S.; Schumacher, S.; Czycholl, G. (2008) Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure. : .
2008 Physical Review B: Condensed Matter Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J. (2008) Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. : .
2007 Physica Status Solidi B-Basic Solid State Physics Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
Schulz, S.; Schumacher, S.; Czycholl, G. (2007) Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties. : .
2007 Physical Review B: Condensed Matter Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
Baer, N.; Schulz, S.; Gartner, P.; Schumacher, S.; Czycholl, G.; Jahnke, F. (2007) Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. : .
2006 Physica Status Solidi (C) Current Topics in Solid State Physics Electronic states in nitride semiconductor quantum dots: A tight-binding approach
Schulz, S. ; Czycholl, G. (2006) Electronic states in nitride semiconductor quantum dots: A tight-binding approach. : .
2006 Physica Status Solidi (C) Current Topics in Solid State Physics Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots
Schulz, S. ;Baer, N. ;Schumacher, S. ;Gartner, P. ;Jahnke, F. ;Czycholl, G. (2006) Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots. : .
2006 Physical Review B: Condensed Matter Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra. : .
2005 Applied Physics Letters Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
Baer, N ; Schulz, S ; Schumacher, S ; Gartner, P ; Czycholl, G ; Jahnke, F (2005) Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation. : .
2005 Physical Review B: Condensed Matter Tight-binding model for semiconductor nanostructures
Schulz, S. ;Czycholl, G (2005) Tight-binding model for semiconductor nanostructures. : .

Conference Publications

Year Publication
2016 SPIE OPTO, Photonics West
B Corbett, Z Quan, DV Dinh, G Kozlowski, D O’Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) SPIE OPTO, Photonics West. : .
2015 SPIE OPTO, Photonics West
S Schulz, O Marquardt, C Coughlan, MA Caro, O Brandt, EP O’Reilly (2015) SPIE OPTO, Photonics West. : .
2015 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
EP O’Reilly, S Schulz, D Tanner, C Coughlan, Miguel A Caro (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : .
2015 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Oliver Marquardt (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : .
2012 Built-in field control in nitride nanostructures operating in the UV
Caro, MA,Schulz, S,Healy, SB,O’Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) Built-in field control in nitride nanostructures operating in the UV. : .
2009 29th International Conference on Physics of Semiconductors
Mourad, D.; Schulz S.; Czycholl G. (2009) 29th International Conference on Physics of Semiconductors. : .
2006 28th International Conference on the Physics of Semiconductors (ICPS-28)
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) 28th International Conference on the Physics of Semiconductors (ICPS-28). : .

Professional Activities

Journal Activities

  • Physical Review B: Condensed Matter – Referee
  • Applied Physics Letters – Referee
  • Phys Status Solidi B – Referee
  • IEEE J Sel Top Quant – Referee
  • Semiconductor Science and Technology – Referee
  • Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & Nanostructures – Referee
  • Superlattice Microst – Referee
  • J Phys D Appl Phys – Referee

Professional Associations

  • Member
  • Member

Honours and Awards

  • [2007] – YACHT TECCON doctoral thesis award
  • [2008] – Bremer Studienpreis 2008
  • [2008] – IRCSET Embark Initiative Postdoctoral Fellowship
  • [2008] – Feodor-Lynen Postdoctoral Research Fellowship
  • [2013] – Starting Investigator Research Grant
  • [2016] – Royal Irish Academy – Royal Society International Exchange Cost Share Programme
  • [2015] – Best Poster Award at 11th International Conference on Nitride Semiconductors, Beijing, China

Teaching Activities

Teaching Interests

  • From Janunary 2017 Module Lecturer at the Department of Physics, UCC
  • From 2013 – 2016 Module Lecturer at the School of Mathematical Sciences, UCC.

Teaching Resources:

  • PY2102: Introduction to Quantum Physics
  • AM2006 & AM6014: Mathematical Modelling for Biological and Environmental Sciences

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Miguel A. Caro Bayo PhD 2013 University College Cork Theory of elasticity and electronic polarization effects in the group-III nitrides