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Leader in Integrated ICT Hardware & Systems

Stefan Schulz -

Contact

+353 (0)21 2346175
stefan.schulz (at) tyndall (dot) ie

  • Photonics

Research Grants

  • SFI Starting Investigator Research Grant (Science Foundation Ireland) €448,328.00 (01-SEP-14 / 31-AUG-18)
  • Royal Irish Academy/Royal Society International Exchange Cost Share Agreement 2016 (Royal Irish Academy (RIA)) €4,344.00 (01-APR-16 / 30-MAR-18)
  • IRCSET Embark Initiative Postdoctoral Fellowship (Irish Research Council) €83,100.00 (01-DEC-08 / 30-NOV-10)
  • Feodor-Lynen Postdoctoral Research Fellowship (Alexander Von Humboldt Foundation) €18,000.00 (01-MAY-08 / 30-NOV-08)

Books

YearPublication
2017 Electronic Band Structure
S. Schulz, E. P. O'Reilly (2017) Electronic Band Structure. : Taylor & Francis Books. [Details]
2014 Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules
S. Schulz and E. P. O'Reilly (2014) Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules. : Springer. [Details]
2014 Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
Eoin P O’Reilly, Oliver Marquardt, Stefan Schulz and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. [Details]

Peer Reviewed Journals

YearPublication
2016 Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
R Benchamekh, S Schulz, EP O'Reilly (2016) Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots. : Physical Review B: Condensed Matter. [Details]
2016 The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. : Journal of Applied Physics. [Details]
2016 Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1?xN quantum wells: theory of ground and excited electron and hole states
Daniel SP Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1?xN quantum wells: theory of ground and excited electron and hole states. : RSC Advances. [Details]
2016 Strongly nonparabolic variation of the band gap in In x Al1? x N with low indium content
Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) Strongly nonparabolic variation of the band gap in In x Al1? x N with low indium content. : Semiconductor Science and Technology. [Details]
2016 Atomistic analysis of the electronic structure of m?plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations
Daniel P Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Atomistic analysis of the electronic structure of m?plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. : Physica Status Solidi (B). [Details]
2016 Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties
Patra, S Kanta and Marquardt, O and Schulz, S (2016) Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties. : Optical and Quantum Electronics. [Details]
2015 Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
Caro, MA;Schulz, S;O'Reilly, EP (2015) Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory. : Physical Review B. [Details]
2015 Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Schulz, S;Tanner, DP;O'Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P (2015) Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. : Physical Review B. [Details]
2015 Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
Stefan Schulz, Miguel A. Caro, Conor Coughlan, and Eoin P. O'reilly (2015) Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. : Physical Review B: Condensed Matter. [Details]
2015 Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems
S Schulz, O Marquardt (2015) Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems. : Physical Review Aphysical Review A. [Details]
2015 Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation
Grzegorz Kozlowski, Brian Corbett, Stefan Schulz (2015) Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation. : Semiconductor Science and Technology. [Details]
2015 Band gap bowing and optical polarization switching in Al1?xGaxN alloys
Conor Coughlan, Stefan Schulz, Miguel A. Caro, and Eoin P. O'Reilly (2015) Band gap bowing and optical polarization switching in Al1?xGaxN alloys. : Physica Status Solidi (B). [Details]
2014 Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
Kozlowski, G,Schulz, S,Corbett, B (2014) Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation. : Applied Physics Letters. [Details]
2014 Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
Schulz S.; M. A. Caro; O'Reilly E. P (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2014 Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : Journal of Physics-Condensed Matter. [Details]
2014 Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys
Schulz, S,Caro, MA,O'Reilly, EP (2014) Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys. : Applied Physics Letters. [Details]
2014 A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
Oliver Marquardt, Sixten Boeck, Christoph Freysoldt, Tilmann Hickel, Stefan Schulz, Jörg Neugebauer, Eoin P. O’Reilly (2014) A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. : Computational Materials Science. [Details]
2014 Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. : Journal of Applied Physics. [Details]
2013 Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : Semiconductor Science and Technology. [Details]
2013 Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : Physical Review B. [Details]
2013 Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : Applied Physics Express. [Details]
2013 Comparison of stress and total energy methods for calculation of elastic properties of semiconductors
Caro, MA,Schulz, S,O'Reilly, EP (2013) Comparison of stress and total energy methods for calculation of elastic properties of semiconductors. : Journal of Physics-Condensed Matter. [Details]
2012 Ground state switching in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2012) Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides. : Physical Review B. [Details]
2012 Piezoelectric properties of zinc blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2012) Piezoelectric properties of zinc blende quantum dots. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 Built-in field control in nitride nanostructures operating in the UV
Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P (2012) Built-in field control in nitride nanostructures operating in the UV. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2012 Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots
Schulz, S,Caro, MA,O'Reilly, EP (2012) Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots. : Applied Physics Letters. [Details]
2012 Effect of alloy fluctuations on the local polarization in nitride nanostructures
Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 A flexible, plane-wave based multiband k center dot p model
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : Optical and Quantum Electronics. [Details]
2011 Built-in field reduction in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2011) Built-in field reduction in InGaN/GaN quantum dot molecules. : Applied Physics Letters. [Details]
2011 Built-in fields in stacked InGaN/GaN quantum dots
Schulz, S,O'Reilly, EP (2011) Built-in fields in stacked InGaN/GaN quantum dots. : Physica Status Solidi A-Applications and Materials Science. [Details]
2011 Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : Physical Review B: Condensed Matter. [Details]
2011 Built-in field control in alloyed c-plane III-N quantum dots and wells
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : Journal of Applied Physics. [Details]
2011 Tight-binding model for the electronic and optical properties of nitride-based quantum dots
Schulz, S,Mourad, D,Schumacher, S,Czycholl, G (2011) Tight-binding model for the electronic and optical properties of nitride-based quantum dots. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2011 Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects
Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F (2011) Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2010 Built-in fields in non-polar In(x)Ga(1-x)N quantum dots
Schulz, S.; O'Reilly, E. P (2010) Built-in fields in non-polar In(x)Ga(1-x)N quantum dots. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2010 Characterising the degree of polarisation anisotropy in an a-plane GaN film
Badcock, T. J.; Schulz, S.; Moram, M. A.; Kappers, M. J.; Dawson, P.; O'Reilly, E. P.; Humphreys, C. J (2010) Characterising the degree of polarisation anisotropy in an a-plane GaN film. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2010 Excitonic binding energies in non-polar GaN quantum wells
Schulz, S.; O'Reilly, E. P (2010) Excitonic binding energies in non-polar GaN quantum wells. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2010 Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : Physical Review B: Condensed Matter. [Details]
2010 Theory of reduced built-in polarization field in nitride-based quantum dots
Schulz, S,O'Reilly, EP (2010) Theory of reduced built-in polarization field in nitride-based quantum dots. : Physical Review B: Condensed Matter. [Details]
2009 Multiband description of the optical properties of zincblende nitride quantum dots
Schulz, S,Mourad, D,Czycholl, G (2009) Multiband description of the optical properties of zincblende nitride quantum dots. : Physical Review B. [Details]
2009 Polarization fields in nitride-based quantum dots grown on nonpolar substrates
Schulz, S,Berube, A,O'Reilly, EP (2009) Polarization fields in nitride-based quantum dots grown on nonpolar substrates. : Physical Review B: Rapid Communications. [Details]
2009 Theory of Gan Quantum Dots For Optical Applications
Williams, DP, Schulz, S, Andreev, AD, O'Reilly, EP (2009) Theory of Gan Quantum Dots For Optical Applications. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2009 Excitation-induced energy shifts in the optical gain spectra of InN quantum dots
Lorke, M,Seebeck, J,Gartner, P,Jahnke, F,Schulz, S (2009) Excitation-induced energy shifts in the optical gain spectra of InN quantum dots. : Applied Physics Letters. [Details]
2009 Theory of GaN Quantum Dots for Optical Applications
Williams, DP,Schulz, S,Andreev, AD,O'Reilly, EP (2009) Theory of GaN Quantum Dots for Optical Applications. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2008 Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
Schulz, S.; Schumacher, S.; Czycholl, G (2008) Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure. : The European Physical Journal B. [Details]
2008 Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J (2008) Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. : Physical Review B: Condensed Matter. [Details]
2007 Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
Schulz, S.; Schumacher, S.; Czycholl, G (2007) Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2007 Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
Baer, N.; Schulz, S.; Gartner, P.; Schumacher, S.; Czycholl, G.; Jahnke, F (2007) Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. : Physical Review B: Condensed Matter. [Details]
2006 Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
Schulz, S.; Schumacher, S.; Czycholl, G (2006) Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra. : Physical Review B: Condensed Matter. [Details]
2006 Electronic states in nitride semiconductor quantum dots: A tight-binding approach
Schulz, S. ; Czycholl, G (2006) Electronic states in nitride semiconductor quantum dots: A tight-binding approach. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2006 Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots
Schulz, S. ;Baer, N. ;Schumacher, S. ;Gartner, P. ;Jahnke, F. ;Czycholl, G (2006) Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2005 Tight-binding model for semiconductor nanostructures
Schulz, S. ;Czycholl, G (2005) Tight-binding model for semiconductor nanostructures. : Physical Review B: Condensed Matter. [Details]
2005 Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
Baer, N ; Schulz, S ; Schumacher, S ; Gartner, P ; Czycholl, G ; Jahnke, F (2005) Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation. : Applied Physics Letters. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication
Year2016 PublicationSPIE OPTO, Photonics West
B Corbett, Z Quan, DV Dinh, G Kozlowski, D O'Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) Development of semipolar (11-22) LEDs on GaN templates . In: Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg eds. : . [Details]
Year2015 Publication2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
EP O'Reilly, S Schulz, D Tanner, C Coughlan, Miguel A Caro (2015) Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. : . [Details]
Year2015 Publication2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Oliver Marquardt (2015) Electronic properties of polar and semi-polar dot-in-a-well heterostructures. : . [Details]
Year2015 PublicationSPIE OPTO, Photonics West
S Schulz, O Marquardt, C Coughlan, MA Caro, O Brandt, EP O'Reilly (2015) Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells . In: Bernd Witzigmann; Marek Osi?ski; Fritz Henneberger; Yasuhiko Arakawa eds. : . [Details]
Year2012 PublicationBuilt-in field control in nitride nanostructures operating in the UV
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4. : . [Details]
Year2009 Publication29th International Conference on Physics of Semiconductors
Mourad, D.; Schulz S.; Czycholl G (2009) Electronic and Optical Properties of Group-III-Nitride Semiconductor Quantum Dots . In: Caldas, MJ; Studart, N eds. : . [Details]
Year2006 Publication28th International Conference on the Physics of Semiconductors (ICPS-28)
Schulz, S.; Schumacher, S.; Czycholl, G (2006) InN/GaN quantum dots: Electronic and optical properties. : . [Details]
Year2016 PublicationInternational Workshop on Nitride Semiconductors
Stefan Schulz (2016) Electronic and Optical Properties of c? and m?Plane InGaN Quantum Wells—Influence of Structural Inhomogeneities and Random Alloy Fluctuations. [Invited Oral Presentation]. : International Workshop on Nitride Semiconductors. [Details]
Year2016 PublicationResearch Seminar at Technical University Berlin
Stefan Schulz (2016) Electronic and optical properties of polar & m-plane InGaN/GaN quantum wells: Influence of indium content, random alloy and well width fluctuations. [Invited Seminars/Guest Lectures]. : Research Seminar at Technical University Berlin. [Details]
Year2016 PublicationGraduate Lecture
Stefan Schulz (2016) Carrier localization effects in wurtzite InGaN and InAlN systems: Impact of random alloy fluctuations and structural inhomogeneities. [Invited Seminars/Guest Lectures]. : Graduate Lecture. [Details]
Year2016 PublicationWorkshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures
Stefan Schulz (2016) Lectures, including a hands-on sessions, on tight binding theory and practical implementation for nanostructures. [Invited Lectures (Workshops)]. : Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures. [Details]
Year2015 Publication15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O'Reilly (2015) Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys and heterostructures. [Invited Lectures (Conference)]. : 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). [Details]
Year2016 PublicationResearch Seminar at Aalto University
Stefan Schulz (2016) Random alloy fluctuations in InAlN and InGaN alloys and heterostructures: Consequences for electronic & optical properties. [Invited Seminars/Guest Lectures]. : Research Seminar at Aalto University. [Details]
Year2014 PublicationThe International Workshop on Nitride Semiconductors (IWN 2014)
Schulz S.; M. A. Caro; O'Reilly E. P (2014) Impact of alloy fluctuations on the electronic and optical properties of InAlN and InGaN systems: Insights from atomistic calculations. [Invited Oral Presentation]. : The International Workshop on Nitride Semiconductors (IWN 2014). [Details]
Year2013 PublicationGaN Workshop
Schulz S (2013) Insights into built-in polarization fields, electronic structure and optical properties of nitride-based nanostructures. [Invited Lectures (Workshops)]. : GaN Workshop. [Details]
Year2012 PublicationINTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF)
Schulz, S.; Caro M. A., O'Reilly E. P (2012) Control and Engineering of Spontaneous and Piezoelectric Polarisation in Nitride-based Nanostructures. [Invited Oral Presentation]. : INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF). [Details]
Year2009 PublicationWorkshop on Physics of nitride-based, nanostructured, light emitting devices
Schulz S (2009) Built-in fields in polar and non-polar nitride-based nanostructures. [Invited Oral Presentation]. : Workshop on Physics of nitride-based, nanostructured, light emitting devices. [Details]

Honours and Awards

  • Royal Irish Acadamy (RIA) & Royal Society (RS): Royal Irish Academy - Royal Society International Exchange Cost Share Programme (2016)
  • International Conference on Nitride Semiconductors: Best Poster Award at 11th International Conference on Nitride Semiconductors, Beijing, China (2015)
  • Science Foundation Ireland: Starting Investigator Research Grant (2013)
  • Irish Research Council: IRCSET Embark Initiative Postdoctoral Fellowship (2008)
  • Alexander von Humboldt Foundation: Feodor-Lynen Postdoctoral Research Fellowship (2008)
  • University of Bremen: Bremer Studienpreis 2008 (2008)
  • University of Bremen: YACHT TECCON doctoral thesis award (2007)

Professional Associations

  • Member, German Physical Society (DPG) (/)
  • Member, Material Research Society (MRS) (/)

Journal Activities

  • Referee, Physical Review B: Condensed Matter (-)
  • Referee, Applied Physics Letters (-)
  • Referee, Journal Of Physics D-Applied Physics (-)
  • Referee, Physica Status Solidi B-Basic Solid State Physics (-)
  • Referee, Ieee Journal Of Selected Topics In Quantum Electronics (-)
  • Referee, Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & Nanostructures (-)
  • Referee, Superlattices And Microstructures (-)
  • Referee, Semiconductor Science And Technology (-)

Teaching Interests

  • From Janunary 2017 Module Lecturer at the Department of Physics, UCC
  • From 2013 - 2016 Module Lecturer at the School of Mathematical Sciences, UCC.
  • PY2102: Introduction to Quantum Physics
  • AM2006 & AM6014: Mathematical Modelling for Biological and Environmental Sciences

Recent Postgraduates

  • Miguel A. Caro Bayo (University College Cork PhD) "Theory of elasticity and electronic polarization effects in the group-III nitrides" (2013)

Internal Collaborators

  • Eoin P. O'Reilly , Tyndall National Institute (IRELAND )
  • Peter J. Parbrook , Tyndall National Institute (IRELAND )
  • Brian Corbett , Tyndall National Institute (IRELAND )

External Collaborators

  • Philip Dawson , The University of Manchester (ENGLAND )
  • Colin J. Humphreys , University of Cambridge (ENGLAND )
  • Rachel A. Oliver , University of Cambridge (ENGLAND )
  • Robert Taylor , University of Oxford (ENGLAND )
  • Robert W. Martin , University of Strathclyde (SCOTLAND )
  • Frank Jahnke , University of Bremen (GERMANY )
  • Gerd Czycholl , University of Bremen (GERMANY )
  • Oliver Marquardt , Paul Drude Institute (GERMANY )
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