Leader in Integrated ICT Hardware & Systems
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Alexander Von Humboldt Foundation | 01-MAY-08 | 30-NOV-08 | Feodor-Lynen Postdoctoral Research Fellowship | |
| Irish Research Council | 01-DEC-08 | 30-NOV-10 | IRCSET Embark Initiative Postdoctoral Fellowship | |
| Science Foundation Ireland | 01-SEP-14 | 31-AUG-18 | SFI Starting Investigator Research Grant | |
| Royal Irish Academy (RIA) | 01-APR-16 | 30-MAR-18 | Royal Irish Academy/Royal Society International Exchange Cost Share Agreement 2016 | Principal Investigator |
| Company | Country | Name |
|---|---|---|
| University of Cambridge | ENGLAND | Rachel A. Oliver |
| University of Cambridge | ENGLAND | Colin J. Humphreys |
| Tyndall National Institute | IRELAND | Eoin P. O'Reilly |
| Tyndall National Institute | IRELAND | Brian Corbett |
| Tyndall National Institute | IRELAND | Peter J. Parbrook |
| University of Strathclyde | SCOTLAND | Robert W. Martin |
| University of Bremen | GERMANY | Gerd Czycholl |
| University of Bremen | GERMANY | Frank Jahnke |
| The University of Manchester | ENGLAND | Philip Dawson |
| Paul Drude Institute | GERMANY | Oliver Marquardt |
| University of Oxford | ENGLAND | Robert Taylor |
| Year | Publication |
|---|---|
| 2017 | Electronic Band Structure S. Schulz, E. P. O'Reilly (2017) Electronic Band Structure. : Taylor & Francis Books. |
| 2014 | Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures Eoin P O’Reilly, Oliver Marquardt, Stefan Schulz and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. |
| 2014 | Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules S. Schulz and E. P. O'Reilly (2014) Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules. : Springer. [Details] |
| Year | Journal | Publication |
|---|---|---|
| 2016 | Physica Status Solidi (B) | Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations Daniel P Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. : . [Details] |
| 2016 | RSC Advances | Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states Daniel SP Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states. : . [Details] |
| 2016 | Journal of Applied Physics | The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. : . [Details] |
| 2016 | Physical Review B: Condensed Matter | Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots R Benchamekh, S Schulz, EP O'Reilly (2016) Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots. : . [Details] |
| 2016 | Optical and Quantum Electronics | Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties Patra, S Kanta and Marquardt, O and Schulz, S (2016) Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties. : . |
| 2016 | Semiconductor Science and Technology | Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content. : . |
| 2015 | Physical Review B | Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory Caro, MA;Schulz, S;O'Reilly, EP (2015) Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory. : AMER PHYSICAL SOC. [Details] |
| 2015 | Semiconductor Science and Technology | Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation Grzegorz Kozlowski, Brian Corbett, Stefan Schulz (2015) Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation. : . |
| 2015 | Physical Review B | Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory Schulz, S;Tanner, DP;O'Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P (2015) Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. : AMER PHYSICAL SOC. [Details] |
| 2015 | Physica Status Solidi (B) | Band gap bowing and optical polarization switching in Al1−xGaxN alloys Conor Coughlan, Stefan Schulz, Miguel A. Caro, and Eoin P. O'Reilly (2015) Band gap bowing and optical polarization switching in Al1−xGaxN alloys. : . [Details] |
| 2015 | Physical Review B: Condensed Matter | Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells Stefan Schulz, Miguel A. Caro, Conor Coughlan, and Eoin P. O'reilly (2015) Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. : . [Details] |
| 2015 | Physical Review Aphysical Review A | Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems S Schulz, O Marquardt (2015) Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems. : . [Details] |
| 2014 | Journal of Physics-Condensed Matter | Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : . [Details] |
| 2014 | Journal of Applied Physics | Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. : . [Details] |
| 2014 | Applied Physics Letters | Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation Kozlowski, G,Schulz, S,Corbett, B (2014) Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation. : . [Details] |
| 2014 | Computational Materials Science | A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures Oliver Marquardt, Sixten Boeck, Christoph Freysoldt, Tilmann Hickel, Stefan Schulz, Jörg Neugebauer, Eoin P. O’Reilly (2014) A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. : . [Details] |
| 2014 | Physica Status Solidi (C) Current Topics in Solid State Physics | Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap Schulz S.; M. A. Caro; O'Reilly E. P. (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : . [Details] |
| 2013 | Applied Physics Express | Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . [Details] |
| 2013 | Semiconductor Science and Technology | Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : . [Details] |
| 2013 | Physical Review B | Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : . [Details] |
| 2012 | Optical and Quantum Electronics | A flexible, plane-wave based multiband k center dot p model Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : . [Details] |
| 2012 | Physica Status Solidi (C) Current Topics in Solid State Physics | Built-in field control in nitride nanostructures operating in the UV Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P. (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details] |
| 2012 | Physica Status Solidi B-Basic Solid State Physics | Effect of alloy fluctuations on the local polarization in nitride nanostructures Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : . [Details] |
| 2012 | Physica Status Solidi B-Basic Solid State Physics | Ground state switching in InGaN/GaN quantum dot molecules Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : . [Details] |
| 2011 | Physica Status Solidi B-Basic Solid State Physics | Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F (2011) Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects. : . [Details] |
| 2011 | Physical Review B: Condensed Matter | Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O; (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : . [Details] |
| 2011 | Physica Status Solidi A-Applications and Materials Science | Built-in fields in stacked InGaN/GaN quantum dots Schulz, S,O'Reilly, EP; (2011) Built-in fields in stacked InGaN/GaN quantum dots. : . [Details] |
| 2011 | Journal of Applied Physics | Built-in field control in alloyed c-plane III-N quantum dots and wells Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP; (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : . [Details] |
| 2010 | Physica Status Solidi (C) Current Topics in Solid State Physics | Excitonic binding energies in non-polar GaN quantum wells Schulz, S.; O'Reilly, E. P. (2010) Excitonic binding energies in non-polar GaN quantum wells. : . [Details] |
| 2010 | Physica Status Solidi (C) Current Topics in Solid State Physics | Characterising the degree of polarisation anisotropy in an a-plane GaN film Badcock, T. J.; Schulz, S.; Moram, M. A.; Kappers, M. J.; Dawson, P.; O'Reilly, E. P.; Humphreys, C. J. (2010) Characterising the degree of polarisation anisotropy in an a-plane GaN film. : . [Details] |
| 2010 | Physica Status Solidi (C) Current Topics in Solid State Physics | Built-in fields in non-polar In(x)Ga(1-x)N quantum dots Schulz, S.; O'Reilly, E. P. (2010) Built-in fields in non-polar In(x)Ga(1-x)N quantum dots. : . [Details] |
| 2010 | Physical Review B: Condensed Matter | Electronic and optical properties of nonpolar a-plane GaN quantum wells Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP; (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : . [Details] |
| 2009 | Physical Review B: Rapid Communications | Polarization fields in nitride-based quantum dots grown on nonpolar substrates Schulz, S,Berube, A,O'Reilly, EP (2009) Polarization fields in nitride-based quantum dots grown on nonpolar substrates. : . [Details] |
| 2009 | IEEE Journal of Selected Topics In Quantum Electronics | Theory of Gan Quantum Dots For Optical Applications Williams, DP, Schulz, S, Andreev, AD, O'Reilly, EP; (2009) Theory of Gan Quantum Dots For Optical Applications. : . [Details] |
| 2009 | Applied Physics Letters | Excitation-induced energy shifts in the optical gain spectra of InN quantum dots Lorke, M,Seebeck, J,Gartner, P,Jahnke, F,Schulz, S (2009) Excitation-induced energy shifts in the optical gain spectra of InN quantum dots. : . [Details] |
| 2008 | The European Physical Journal B | Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure Schulz, S.; Schumacher, S.; Czycholl, G. (2008) Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure. : . [Details] |
| 2008 | Physical Review B: Condensed Matter | Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J. (2008) Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. : . [Details] |
| 2007 | Physica Status Solidi B-Basic Solid State Physics | Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties Schulz, S.; Schumacher, S.; Czycholl, G. (2007) Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties. : . [Details] |
| 2007 | Physical Review B: Condensed Matter | Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots Baer, N.; Schulz, S.; Gartner, P.; Schumacher, S.; Czycholl, G.; Jahnke, F. (2007) Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. : . [Details] |
| 2006 | Physica Status Solidi (C) Current Topics in Solid State Physics | Electronic states in nitride semiconductor quantum dots: A tight-binding approach Schulz, S. ; Czycholl, G. (2006) Electronic states in nitride semiconductor quantum dots: A tight-binding approach. : . [Details] |
| 2006 | Physica Status Solidi (C) Current Topics in Solid State Physics | Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots Schulz, S. ;Baer, N. ;Schumacher, S. ;Gartner, P. ;Jahnke, F. ;Czycholl, G. (2006) Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots. : . [Details] |
| 2006 | Physical Review B: Condensed Matter | Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra Schulz, S.; Schumacher, S.; Czycholl, G. (2006) Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra. : . [Details] |
| 2005 | Applied Physics Letters | Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation Baer, N ; Schulz, S ; Schumacher, S ; Gartner, P ; Czycholl, G ; Jahnke, F (2005) Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation. : . [Details] |
| 2005 | Physical Review B: Condensed Matter | Tight-binding model for semiconductor nanostructures Schulz, S. ;Czycholl, G (2005) Tight-binding model for semiconductor nanostructures. : . |
| Year | Publication |
|---|---|
| 2016 | SPIE OPTO, Photonics West B Corbett, Z Quan, DV Dinh, G Kozlowski, D O'Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) SPIE OPTO, Photonics West. : . [Details] |
| 2015 | SPIE OPTO, Photonics West S Schulz, O Marquardt, C Coughlan, MA Caro, O Brandt, EP O'Reilly (2015) SPIE OPTO, Photonics West. : . [Details] |
| 2015 | 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) EP O'Reilly, S Schulz, D Tanner, C Coughlan, Miguel A Caro (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
| 2015 | 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Stefan Schulz, Oliver Marquardt (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
| 2012 | Built-in field control in nitride nanostructures operating in the UV Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details] |
| 2009 | 29th International Conference on Physics of Semiconductors Mourad, D.; Schulz S.; Czycholl G. (2009) 29th International Conference on Physics of Semiconductors. : . |
| 2006 | 28th International Conference on the Physics of Semiconductors (ICPS-28) Schulz, S.; Schumacher, S.; Czycholl, G. (2006) 28th International Conference on the Physics of Semiconductors (ICPS-28). : . |
| Year | Publication |
|---|---|
| 2016 | Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures Stefan Schulz (2016) Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures. : . |
| 2016 | Research Seminar at Technical University Berlin Stefan Schulz (2016) Research Seminar at Technical University Berlin. : . |
| 2016 | International Workshop on Nitride Semiconductors Stefan Schulz (2016) International Workshop on Nitride Semiconductors. : . |
| 2016 | Graduate Lecture Stefan Schulz (2016) Graduate Lecture. : . |
| 2016 | Research Seminar at Aalto University Stefan Schulz (2016) Research Seminar at Aalto University . : . |
| 2015 | 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O'Reilly (2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . |
| 2014 | The International Workshop on Nitride Semiconductors (IWN 2014) Schulz S.; M. A. Caro; O'Reilly E. P. (2014) The International Workshop on Nitride Semiconductors (IWN 2014). : . |
| 2013 | GaN Workshop Schulz S (2013) GaN Workshop. : . |
| 2012 | INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF) Schulz, S.; Caro M. A., O'Reilly E. P. (2012) INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF). : . |
| 2009 | Workshop on "Physics of nitride-based, nanostructured, light emitting devices" Schulz S (2009) Workshop on "Physics of nitride-based, nanostructured, light emitting devices". : . |
| Student | Degree | Graduation Year | Institution | Thesis |
|---|---|---|---|---|
| Miguel A. Caro Bayo | PhD | University College Cork | Theory of elasticity and electronic polarization effects in the group-III nitrides |