Senior Postdoctoral Researcher in the electro-optical characterisation of InGaP microLED structures. Supported by META

Senior Postdoctoral Researcher in the electro-optical characterisation of InGaP microLED structures. Supported by META.
Contract: Full Time/Fixed Term

The Tyndall National Institute at University College Cork invite applications for a senior postdoctoral position focussed on the electro-optical characterisation InGaP metal-oxide-semiconductor (MOS) structures. The senior research position is supported by Meta- and is related to an increased understanding of non-radiative recombination centres in InGaP based microLED structures.

Background
The ability to form displays comprised of microscale light emitting diodes (LEDs), where the LED lateral dimensions are around 2um, is central to the realisation of Augmented Reality Head-Mounted Displays. Such head-mounted displays, which augment our surroundings, will open the door to a vast range of new applications in areas such as:  surgery, manufacturing, training, entertainment and education.

The current research challenge in terms of the practical realisation of such displays, is the properties of the semiconductor/oxide interface at, or near, the periphery of the light emitting diodes. The semiconductor materials which are used for light emission are called compound semiconductors and are typically comprised of two or three elements from groups III and V of the periodic table (e.g., GaAs, InGaP, GaN, InGaN). As the lateral dimensions of the LEDs drop below around 10um, which is required for a high-resolution display, crystalline defects at the periphery of the device, or within the surrounding passivation oxide, can play an increasing role, and act as non-radiative recombination centres, reducing the internal quantum efficiency. The problem is particularly challenging in the case of the red microLED, typically formed using the compound semiconductor InGaP. The ability to characterise these non-radiative defects is the basis for the placement.

The circa 2-year senior postdoctoral research position will be focussed on the electrical characterisation of MOS structures formed on InGaP. The experimental measurements will be based primarily on impedance spectroscopy of the InGaP MOS system. This will include the variation of the admittance and phase angle with voltage, ac signal frequency and temperature and analysis of the transient capacitance relaxation to investigate defects located close to the mid-gap energy of the InGaP. The work will also involve the development of MOS impedance spectroscopy during illumination over the wavelength range from the Infrared to Ultraviolet.  The experimental data will be analysed to determine the spatial and energetic distribution of non-radiative recombination centres near the InGaP/oxide interface. The experimental results and analysis will be used to guide process development aimed at increasing the internal quantum efficiency of red InGaP based microLEDs.
The successful candidate will have completed PhD in the physics related discipline and have 2 years relevant postdoctoral experience analysing III-V MOS structures with admittance spectroscopy.

Responsibilities

• The development of mask sets to form structures for electrical characterisation of the InGaP MOS structures
• Interacting with Tyndall and Meta to form the relevant MOS structures.
• The candidate will need to take a management role in the electrical characterisation of InGaP MOS structures using impedance spectroscopy,  the development of the novel electro-optic MOS characterisation, and the application of transient capacitance relaxation measurements.
• The scrutiny of the experimental data using the Ginestra TCAD software.
• Participate in Education and Public Engagement activities, as required.
• Ensure all activities are compliant with the Tyndall Quality Management system.
• Ensure all activities are compliant with the required Health and Safety standards.
• Carry out any additional duties as may reasonably be required within the general scope and level of the post.

Essential Criteria

• The candidate should have a PhD in Engineering or Physics.
• Typically 2 years relevant senior post-doctoral experience in examining III-V MOS structures with admittance spectroscopy.
• A proven track record in the design fabrication and characterisation of electronic and/or electro-optic devices.

Desirable  Criteria

• Experience in the fabrication of semiconductor devices (e.g., lithography, sputtering, etching, oxide deposition…)
• Experience of on-wafter electrical characterisation of semiconductor  devices in a probe station.
• Experience in the device modelling (e.g., Ginestra, Synopsis, Comsol..etc)
• Excellent verbal and written communication skills
• Strong leadership skills
• Experience in the growth of III-V devices is also an asset.

For further information on this position, please contact Prof Paul Hurley, Nanoelectronic Materials and Devices Photonics Group, Tyndall National Institute

Appointment may be made on the IUA Senior Postdoctoral Researcher Scale € 54,307- € 59,064 per annum. Salary placement on appointment will be in accordance with public sector pay policy. 

Closing date of application is 1pm  26th August 2025

Application Instructions:
Please make sure to attach an up-to-date CV/Resume AND a brief motivation letter outlining how you meet the ‘Essential Criteria’ for this role.

Please note that Garda vetting and/or an international police clearance check may form part of the selection process.
The University, at its discretion, may undertake to make an additional appointment(s) from this competition following the conclusion of the process.

Please note that an appointment to posts advertised will be dependent on University approval, together with the terms of the employment control framework for the higher education sector.

At this time, Tyndall National Institute does not require the assistance of recruitment agencies.
Tyndall National Institute at University College, Cork is an Equal Opportunities Employer.