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Leader in Integrated ICT Hardware & Systems

Paul Hurley -

researcher

Contact

+353 (0)21 2346080
paul.hurley (at) tyndall (dot) ie

  • MicroNano Systems

Professor Hurley received his Ph.D. (1990) and B.Eng. (1985, 1st class honors) in Electronic Engineering at the University of Liverpool. Paul is the Head of the Nanoelectronic Materials and Devices Group at the Tyndall National Institute and a Research Professor in Depertment of Chemistry at University College Cork.  

Paul’s  research group are exploring alternative semiconductor materials and device structures aimed at improving energy efficiency in the next generation of logic switches which will be used in applications, covering: nanoelectronics, flexible electronics, mobile communications and low power sensor technologies. Paul leads a research team of around ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform research into alternative semiconductor materials and device structures aimed at improving the energy efficiency in the next generation of logic devices. In particular the group are working on III-V and 2D (e.g., MoS2, WSe2) semiconductors and their interfaces with metals and oxides which will form the heart of logic devices incorporating these materials.  The group are also exploring the use of metal-oxide-semiconductor (MOS) systems for the creation of solar fuels through water splitting reactions

Paul leads a research team of ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform basic research on high dielectric constant (high-k) thin films for applications in nanoelectronics. The current research work covers use of high-k oxides in conjunction with III-V and 2D semiconductor materials for future energy efficient logic devices and the use of high-k films in integrated capacitors. The groups are also exploring the use of MOS systems in energy applications as well as investigating the electrical properties of emerging phase change materials. Paul received an Intel Outstanding Researcher award for his work in high-k/III-V interface defect studies in 2012. Paul is a member of the Technical Committee of the Insulating Films on Semiconductors (INFOS) conference and the International Workshop on Dielectrics in Microelectronics (WoDiM). In addition to research activities, he is a part time lecturer in the Department of Electrical Engineering at University College Cork. He has published over one hundred papers in the field of micro and nanoelectronics, and has given over 25 invited presentations and seminars in the high-k area from 2006 to 2014.

Research Grants

Funder Start Date End Date Title Role
Science Foundation of Ireland 05-JUN-07 28-AUG-07 SFI-Summer Student David Kohen Principal Investigator
Science Foundation of Ireland 05-JUN-06 28-AUG-06 Summer Student - David Hondagneu Principal Investigator
Science Foundation of Ireland 01-MAY-08 31-OCT-08 SFI"Future Oxides & Channel Materials for Ultimate Scaling" FOCUS Principal Investigator
European Union 01-JAN-08 31-DEC-15 EU 'Silicon-based Nanostructures & Nanodevices for Long Term Nanoelectronics Applications' Principal Investigator
Science Foundation of Ireland 01-JAN-12 31-DEC-12 Fabrication and characterisation of Schottky contacts and capacitor structures on Chalcogenide passivated germanium. Principal Investigator
Science Foundation of Ireland 01-OCT-09 31-DEC-15 Future Oxides and Channel Materials for Ultimate Scaling (FOCUS) Principal Investigator
Science Foundation of Ireland 01-JAN-12 01-FEB-14 The junctionless InGaAs MOSFET - The platform and the process. Principal Investigator
Science Foundation of Ireland 01-AUG-05 30-JUN-12 SFI "High Dielectric Constant Materials for Future ICT" Principal Investigator
Irish Research Council for Science, Engineering & Technology (IRCSET) 01-OCT-06 28-FEB-10 IRCSET Scholarship - Rathnait Long Principal Investigator
Science Foundation of Ireland 01-DEC-07 30-MAY-08 Total External Reflection X-ray Fluorescence Spectrometer for Compositional Analysis of Thin Films Principal Investigator
Irish Research Council for Science, Engineering & Technology (IRCSET) 01-OCT-09 30-SEP-12 IRCSET-Marie Curie International Mobility Fellowships in Science Engineering and Technology Principal Investigator
European Union 01-DEC-12 30-NOV-15 SYnthesis and functionality of chalcogenide NAnostructure for PhasSE change memories. Principal Investigator
Industry 01-DEC-13 31-DEC-21 Hopkins Communicaqtions WoDIM Conference 2014 Principal Investigator
European Union 01-NOV-13 30-APR-17 Compound Semiconductors for 3D integration. Principal Investigator
Science Foundation of Ireland 01-DEC-14 31-JUL-18 Understanding the nature of Interfaces in two dimensional Electronic Devices. Principal Investigator
Science Foundation of Ireland 01-SEP-14 31-MAY-18 Copper diffusion barrier layers for advanced interconnect integration. Principal Investigator
Science Foundation Ireland 01-APR-10 31-AUG-15 "Investigating Emerging Non-Silicon Transistors (INVENT)"
Science Foundation Ireland 01-DEC-07 31-MAY-13 FORME
Other: Not Listed 01-AUG-10 31-JUL-12 Fieldeffect controllable antifuse structures based on dielectric breakdown
Intel Corporation 02-APR-12 29-MAR-13 Dit extractions and interpretation on III-V device related structures
Intel Corporation 01-APR-11 30-MAR-12 Development of measurement capability for high-k/InGaAs systems and CV and GV analysis of samples from INTEL CR
Science Foundation Ireland 01-DEC-13 30-NOV-16 “Research into Emerging Nano-structured Electrodes for the splitting of Water (RENEW)
Intel Corporation 01-MAR-14 28-FEB-15 Characteristaion of 2D Materials
Intel Corporation 01-APR-13 28-MAR-14 Investigating the capacitance and conductance of narrow band gap MOS systems and its possible application to Cox extraction
European Commission 01-JUN-06 30-SEP-09 Pulling the Limits of NanoCMOS electronics (PULLNANO) EU Integrated Project
European Commission 01-JAN-08 30-DEC-10 Silicon-based nanostructures and nanodevices for nanoelectronics (NANOSIL) EU Network of Excellence
Enterprise Ireland 03-FEB-09 31-AUG-12 Epitaxial Nanostructured GaAs on silicon for next generation Electronics (ENGAGE)
Irish Research Council 01-OCT-09 28-SEP-12 An investigation of carrier transport in compound semiconductor MOSFETs
European Commission 03-SEP-01 25-AUG-04 Ferroelectrics for Europe (FLEUR)
Irish Research Council 02-OCT-06 25-SEP-09 ‘Deposition of High-k Dielectrics on III-V Substrates’
European Commission 01-JUN-00 30-JUN-03 Tantalum pentoxide photodeposition on silicon (TOPS)

Research Collaborators

Company Country Name
Stanford University U.S.A. Prof Paul C McIntyre
University of Texas at Dallas U.S.A. Prof Robert Wallace
INTEL Corporation U.S.A. Dr Kelin Kuhn Intel Fellow
IBM Yorktown U.S.A. Dr. Richard Haight
Glasgow University SCOTLAND Prof Iain Thayne
IBM Zurich SWITZERLAND Dr Jean Fompeyrine
Universitat Autonoma de Barcelona SPAIN Prof Enrique Miranda
University of Siegen GERMANY Prof Max Lemme
Liverpool Univeristy UNITED KINGDOM Prof Steve Hall
Trinity College Dublin IRELAND Prof Georg Duesberg
Trinity College Dublin IRELAND Prof John Boland
IMEP Grenoble FRANCE Prof Gerard Ghibaudo
Catholic University of Leuven BELGIUM Prof Valery Afanasev
Tyndall IRELAND Prof Martyn Pemble
Tyndall IRELAND Dr Ian Povey
Tyndall IRELAND Prof Jim Greer
Dublin City University IRELAND Prog Greg Hughes
Queens University Belfast UNITED KINGDOM Dr David McNeill
Trinity College Dublin IRELAND Dr Robert Barklie
University of Texas at Dallas U.S.A. Prof Masimmo Fischetti
Chalmers University SWEDEN Prof Olof Engstrom

Book Chapters

YearPublication
2010Chapter 2: Gate Stacks
O. Engström, I. Z. Mitrovic, S. Hall, P. K. Hurley, K. Cherkaoui, S. Monaghan, H. D. B. Gottlob and M. C. Lemme (2010) Chapter 2: Gate Stacks. : John Wiley & Sons, Inc..
2010Gate Stacks
O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) Gate Stacks. : John Wiley & Sons, Inc..
2003Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2
Modreanu, M.,Hurley, P. K.,O'Sullivan, B. J.,O'Looney, B.,Senateur, J. P.,Rousell, H.,Rousell, F.,Audier, M.,Dubourdieu, C.,Boyd, I. W.,Fang, Q.,Leedham, T. L.,Rushworth, S.,Jones, A. C.,Davies, H.,Jimenez, C.,Blau, W. J.,Donegan, J. F.,Duke, A. F.,MacCraith, J. A.,McMillan, N. D.,Oconnor, G. M.,Omongain, E.,Toal, V.,McLaughlin, J. A. (2003) Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2. : .

Peer Reviewed Journals

YearJournalPublication
2014Applied Physics LettersDiffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing. : . [Details]
2014Applied Physics LettersDiffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
Cabrera, W and Brennan, B and Dong, H and O'Regan, TP and Povey, IM and Monaghan, S and O'Connor, 'E and Hurley, PK and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : .
2014Applied Physics LettersFermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W. (2014) Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers. : .
2014Journal of Applied PhysicsA combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures
Lin, J,Walsh, L,Hughes, G,Woicik, JC,Povey, IM,O'Regan, TP,Hurley, PK (2014) A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures. : . [Details]
2013Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : .
2013Physical Review BHard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures
Walsh, LA,Hughes, G,Lin, J,Hurley, PK,O'Regan, TP,Cockayne, E,Woicik, JC (2013) Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures. : . [Details]
2013Journal of Vacuum Science & Technology BNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . [Details]
2013Journal of Applied PhysicsAnalysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E. (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013Microelectronic EngineeringElectrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : . [Details]
2013Journal of Applied PhysicsAnalysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
Saura, X,Sune, J,Monaghan, S,Hurley, PK,Miranda, E (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : . [Details]
2013Journal of Applied PhysicsChemical and electrical characterization of the HfO2/InAlAs interface
Brennan, B,Galatage, RV,Thomas, K,Pelucchi, E,Hurley, PK,Kim, J,Hinkle, CL,Vogel, EM,Wallace, RM (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : . [Details]
2013IEEE Transactions on Device and Materials ReliabilityThe Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013Solid-State ElectronicsInvestigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : . [Details]
2013Microelectronics ReliabilityDirect observation of the generation of breakdown spots in MIM structures under constant voltage stress
Saura, X,Moix, D,Sune, J,Hurley, PK,Miranda, E (2013) Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. : . [Details]
2013Microelectronic EngineeringElectrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, 'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system. : .
2013Journal of Applied PhysicsChemical and electrical characterization of the HfO2/InAlAs interface
Brennan, B. and Galatage, R. V. and Thomas, K. and Pelucchi, E. and Hurley, P. K. and Kim, J. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : . [Details]
2013ECS TransactionsElectrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, 'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : .
2013Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresEffects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : .
2012Applied Physics LettersInterface barriers at the interfaces of polar GaAs(111) faces with Al2O3
Chou, HY,O'Connor, E,Hurley, PK,Afanas'ev, VV,Houssa, M,Stesmans, A,Ye, PD,Newcomb, SB (2012) Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3. : . [Details]
2012Semiconductor Science and TechnologyOn the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . [Details]
2012Journal of the Electrochemical SocietyErratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : . [Details]
2012Semiconductor Science and TechnologyOn the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : .
2012Microelectronic EngineeringThe structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : . [Details]
2012Applied Physics LettersA combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures
Walsh, LA,Hughes, G,Hurley, PK,Lin, J,Woicik, JC (2012) A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures. : . [Details]
2012Journal of the Electrochemical SocietyErratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : . [Details]
2012IEEE Transactions On Electron DevicesImpact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : .
2012Electrochemical Society TransactionsCan metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : . [Details]
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
S. Monaghan, A. O'Mahony, K. Cherkaoui, É. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : .
2011Applied Physics LettersIn-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition
Milojevic, M,Contreras-Guerrero, R,O'Connor, E,Brennan, B,Hurley, PK,Kim, J,Hinkle, CL,Wallace, RM; (2011) In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition. : . [Details]
2011Applied Physics LettersCalculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures
O'Regan, TP,Hurley, PK (2011) Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures. : . [Details]
2011Applied Physics LettersAnalysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
Negara, MA,Veksler, D,Huang, J,Ghibaudo, G,Hurley, PK,Bersuker, G,Goel, N,Kirsch, P (2011) Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors. : . [Details]
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details]
2011Microelectronic EngineeringMulti-technique characterisation of MOVPE-grown GaAs on Si
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . [Details]
2011Applied Physics LettersOn the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
Sonnet, A. M. and Galatage, R. V. and Hurley, P. K. and Pelucchi, E. and Thomas, K. K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Wallace, R. M. and Vogel, E. M. (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : .
2011Microelectronic EngineeringRemote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs
Sonnet, A. M. and Galatage, R. V. and Hurley, P. M. and Pelucchi, E. and Thomas, K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Vogel, E. M. (2011) Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs. : .
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : . [Details]
2011Advanced Materials ResearchElectrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : .
2011Electrochemical Society TransactionsCapacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : . [Details]
2011Microelectronic EngineeringTransport and interface states in high-κ LaSiO x dielectric
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) Transport and interface states in high-κ LaSiO x dielectric. : .
2011Journal of Applied PhysicsA systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : .
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : .
2011Microelectronic EngineeringThe structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : .
2011Applied Physics LettersOn the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
Sonnet, AM,Galatage, RV,Hurley, PK,Pelucchi, E,Thomas, KK,Gocalinska, A,Huang, J,Goel, N,Bersuker, G,Kirk, WP,Hinkle, CL,Wallace, RM,Vogel, EM (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : . [Details]
2011Journal of Applied PhysicsA systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
O’Connor, 'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : .
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . [Details]
2010Journal of Crystal GrowthLow-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
Young, RJ,Mereni, LO,Petkov, N,Knight, GR,Dimastrodonato, V,Hurley, PK,Hughes, G,Pelucchi, E; (2010) Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. : . [Details]
2010Applied Physics LettersOrigin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Shin, B,Weber, JR,Long, RD,Hurley, PK,Van de Walle, CG,McIntyre, PC; (2010) Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates. : . [Details]
2010Applied Physics LettersElectron energy band alignment at the (100)Si/MgO interface
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) Electron energy band alignment at the (100)Si/MgO interface. : . [Details]
2010Journal of Applied PhysicsA systematic study of NH42S passivation '22%, 10%, 5%, or 1%'
É. O'Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley; (2010) A systematic study of NH42S passivation '22%, 10%, 5%, or 1%'. : .
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2010Applied Physics LettersModeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
O'Regan, TP,Hurley, PK,Soree, B,Fischetti, MV; (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. : . [Details]
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2010Electrochemical Society TransactionsElectrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : .
2010Applied Physics LettersElectron band alignment between (100)InP and atomic-layer deposited Al2O3
Chou, HY,Afanas'ev, VV,Stesmans, A,Lin, HC,Hurley, PK,Newcomb, SB; (2010) Electron band alignment between (100)InP and atomic-layer deposited Al2O3. : . [Details]
2009Solid-State ElectronicsDetermination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details]
2009Microelectronic EngineeringDegradation Dynamics and Breakdown of MgO Gate Oxides
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK; (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : . [Details]
2009Applied Physics LettersElectrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : . [Details]
2009Microelectronic EngineeringBand Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) Band Offsets At Interfaces of (100)Inxga1-Xas (0 ≪= X ≪= 0.53) With Al2o3 and Hfo2. : . [Details]
2009Electrochemical and Solid State LettersUnpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001)
Shin, B, Cagnon, J, Long, RD, Hurley, PK, Stemmer, S, McIntyre, PC; (2009) Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001). : . [Details]
2009Applied Physics LettersEnergy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2009) Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2. : . [Details]
2009Journal of Vacuum Science & Technology BLeakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : . [Details]
2009Electrochemical and Solid State LettersHalf-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as
Brennan, B, Milojevic, M, Kim, HC, Hurley, PK, Kim, J, Hughes, G, Wallace, RM; (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as. : . [Details]
2009Applied Physics LettersTemperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : . [Details]
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : . [Details]
2009Journal of Applied PhysicsAnalysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : . [Details]
2009Solid-State ElectronicsDetermination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details]
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : . [Details]
2009Electrochemical and Solid State LettersHalf-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As
Brennan, B,Milojevic, M,Kim, HC,Hurley, PK,Kim, J,Hughes, G,Wallace, RM; (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As. : . [Details]
2009Applied Physics LettersTemperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : . [Details]
2009Electrochemical and Solid State LettersUnpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)
Shin, B,Cagnon, J,Long, RD,Hurley, PK,Stemmer, S,McIntyre, PC; (2009) Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001). : . [Details]
2009Journal of Applied PhysicsAnalysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : . [Details]
2009Applied Physics LettersEnergy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : . [Details]
2009Applied Physics LettersElectrical characterization of the soft breakdown failure mode in MgO layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : . [Details]
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : . [Details]
2009Microelectronics ReliabilityEffects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : . [Details]
2009Electrochemical Society TransactionsEffects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K. (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : . [Details]
2009Microelectronic EngineeringDegradation dynamics and breakdown of MgO gate oxides
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K. (2009) Degradation dynamics and breakdown of MgO gate oxides. : .
2009Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresLeakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : .
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : .
2009Microelectronic EngineeringBand offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : .
2009Applied Physics LettersEnergy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : .
2009Applied Physics LettersEnergy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2. : .
2009Microelectronic EngineeringBand offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Band offsets at interfaces of (100) In< i> x Ga< sub> 1-< i> x As (0¿< i> x¿ 0.53) with Al< sub> 2 O< sub> 3 and HfO< sub> 2. : .
2008Applied Physics LettersEnergy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2
Afanas'ev, VV, Badylevich, M, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB; (2008) Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2. : . [Details]
2008Journal of Applied PhysicsElectrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : . [Details]
2008ChemphyschemFacile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : . [Details]
2008Applied Physics LettersEnergy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy
Dobaczewski, L, Bernardini, S, Kruszewski, P, Hurley, PK, Markevich, VP, Hawkins, ID, Peaker, AR; (2008) Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy. : . [Details]
2008Applied Physics LettersIn Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : . [Details]
2008Journal of the Electrochemical SocietyInterface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : . [Details]
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : .
2008Journal of Material ChemistryThin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : .
2008Chem. Phys. ChemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : .
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.. : . [Details]
2008Applied Physics LettersEnergy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
Afanas'ev, VV,Badylevich, M,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB; (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2. : . [Details]
2008Journal of Applied PhysicsElectrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
Cherkaoui, K,Monaghan, S,Negara, MA,Modreanu, M,Hurley, PK,O'Connell, D,McDonnell, S,Hughes, G,Wright, S,Barklie, RC,Bailey, P,Noakes, TCQ; (2008) Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation. : . [Details]
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . [Details]
2008Applied Physics LettersEnergy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy
Dobaczewski, L,Bernardini, S,Kruszewski, P,Hurley, PK,Markevich, VP,Hawkins, ID,Peaker, AR; (2008) Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy. : . [Details]
2008Journal of the Electrochemical SocietyInterface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : . [Details]
2008Applied Physics LettersIn situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : . [Details]
2008Applied Physics LettersEnergy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2)
Afanas'ev, V. V.,Badylevich, M.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B. (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2). : .
2008Applied Physics LettersIn situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : .
2008Applied Physics LettersIn situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : .
2008Applied Physics LettersEnergy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2
Afanasev, VV and Badylevich, Mikhail and Stesmans, Andre and Brammertz, Guy and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and others (2008) Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2. : .
2008Journal Of Applied Physicsjournal Of Applied PhysicsElectrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : .
2008Solid-State ElectronicsHigh-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : . [Details]
2007Microelectronics ReliabilityCharacterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : . [Details]
2007Microelectronics ReliabilityPhysical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : .
2005Microelectronics Reliabilitymicroelectronics ReliabilityElectrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Decams, J. M.,Guillon, H.,Jimenez, C.,Audier, M.,Senateur, J. P.,Dubourdieu, C.,Cadix, O.,O'Sullivan, B. J.,Modreanu, M.,Hurley, P. K.,Rusworth, S.,Leedham, T. J.,Davies, H.,Fang, Q.,Boyd, I. (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : .
2005Materials Science and Engineering B-Solid State Materials For Advanced TechnologyPulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
Dubourdieu, C,Roussel, H,Jimenez, C,Audier, M,Senateur, JP,Lhostis, S,Auvray, L,Ducroquet, F,O'Sullivan, BJ,Hurley, PK,Rushworth, S,Hubert-Pfalzgraf, L (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : . [Details]
2005Electrochemical and Solid State LettersInterface states and Pb defects at the Si(100)/HfO2 interface
Hurley, PK,O'Sullivan, BJ,Afanas'ev, VV,Stesmans, A; (2005) Interface states and Pb defects at the Si(100)/HfO2 interface. : . [Details]
2005Microelectronics Reliabilitymicroelectronics ReliabilityPost deposition UV-induced O(2) annealing of HfO(2) thin films
Fang, Q.,Liaw, I.,Modreanu, M.,Hurley, P. K.,Boyd, I. W. (2005) Post deposition UV-induced O(2) annealing of HfO(2) thin films. : .
2004Thin Solid FilmsInterface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q,Zhang, JY,Wang, Z,Modreanu, M,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Hywel, D,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : . [Details]
2004IEEE Transactions On Electron DevicesAvalanche photodiode-based active pixel imager
Marshall, GF,Jackson, JC,Denton, J,Hurley, PK,Braddell, O,Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : . [Details]
2004Journal of the Electrochemical SocietyElectrical evaluation of defects at the Si(100)/HfO2 interface
O'Sullivan, BJ,Hurley, PK,O'Connor, E,Modreanu, M,Roussel, H,Jimenez, C,Dubourdieu, C,Audier, M,Senateur, JP (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : . [Details]
2004Thin Solid Filmsthin Solid FilmsInterface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q.,Zhang, J. Y.,Wang, Z.,Modreanu, M.,O'Sullivan, B. J.,Hurley, P. K.,Leedham, T. L.,Hywel, D.,Audier, M. A.,Jimenez, C.,Senateur, J. P.,Boyd, I. W. (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : .
2004Journal Of The Electrochemical Societyjournal Of The Electrochemical SocietyElectrical evaluation of defects at the Si(100)/HfO2 interface
O'Sullivan, B. J.,Hurley, P. K.,O'Connor, E.,Modreanu, M.,Roussel, H.,Jimenez, C.,Dubourdieu, C.,Audier, M.,Senateur, J. P. (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : .
2003IEEE Transactions on Semiconductor ManufacturingImproving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Duane,R.; Hurley, P.; Power, J.A.; Kelly, S.C.; Mathewson, A.; (2003) Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size. : .
2003IEEE Transactions on Semiconductor ManufacturingImproving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size
MacSweeney, D,McCarthy, KG,Floyd, L,Duane, R,Hurley, P,Power, JA,Kelly, SC,Mathewson, A (2003) Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size. : . [Details]
2003Thin Solid FilmsInterface of tantalum oxide films on silicon by UV annealing at low temperature
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Interface of tantalum oxide films on silicon by UV annealing at low temperature. : .
2003Journal of Applied PhysicsAnalysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing
Hurley, PK,Stesmans, A,Afanas'ev, VV,O'Sullivan, BJ,O'Callaghan, E (2003) Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing. : . [Details]
2003Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & NanostructuresInvestigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
Modreanu, M.,Gartner, A.,Aperathitis, E.,Tomozeiu, N.,Androulidaki, M.,Cristea, D.,Hurley, P. (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : .
2003IEEE Transactions on Semiconductor ManufacturingSPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization
MacSweeney, D and McCarthy, KG and Floyd, L and Duane, R and Hurley, P and Power, JA and Kelly, SC and Mathewson, A (2003) SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization. : .
2002Applied Physics LettersComparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Jackson, JC,Hurley, PK,Lane, B,Mathewson, A,Morrison, AP; (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : . [Details]
2002Journal of the Electrochemical SocietyExamination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing
Hurley, PK,O'Sullivan, BJ,Cubaynes, FN,Stolk, PA,Widdershoven, FP,Das, JH; (2002) Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing. : . [Details]
2002Applied Physics LettersComparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes
J. C. Jackson, P. K. Hurley, A. P. Morrison, B. Lane, and A. Mathewson.; (2002) Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes. : .
2001Journal of Applied PhysicsSi(100)-SiO2 interface properties following rapid thermal processing
O'Sullivan, BJ,Hurley, PK,Leveugle, C,Das, JH (2001) Si(100)-SiO2 interface properties following rapid thermal processing. : .
2001Journal De Physique IvEffects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD
O'Sullivan, BJ,O'Connor, E,Howley, R,Hurley, PK,Zhang, JY,Kaliwoh, N,Fang, Q,Boyd, IW,Dubourdieu, C,Audier, MA,Senateur, JP,Davies, HO,Leedham, TJ,Jones, AC,Semmache, B (2001) Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD. : .
2001Journal De Physique IvPhoto-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy
Zhang, JY,Fang, Q,Wu, JX,Xu, CY,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy. : .
1999Microelectronic EngineeringCharacteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source.
Mooney, MB,Hurley, PK,O'Sullivan, BJ,Beechinor, JT,Zhang, JY,Boyd, IW,Kelly, PV,Senateur, JP,Crean, GM,Jimenez, C,Paillous, M (1999) Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source.. : .
1997Journal of the Electrochemical SocietyDopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation
Kalnitsky, A,Hurley, PK,Lepert, A; (1997) Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation. : .
1996IEEE Electron Device LettersEffects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping
Yuan, XJ,Kivi, M,Taylor, S,Hurley, P; (1996) Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping. : .
1996Microelectronics and ReliabilityImpact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]
Hurley, P. K.; Sheehan, E.; Moran, S.; Mathewson, A.; (1996) Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]. : .
1995Quality and Reliability Engineering InternationalHOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A (1995) HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL. : .
1995Semiconductor Science and TechnologyCapacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]
Hurley, P. K.; Wall, L.; Moran, S.; Mathewson, A.; (1995) Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]. : .
1994Microelectronics JournalEVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A; (1994) EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS. : .

Other Journals

YearJournalPublication
2007Solid-State ElectronicsNavigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends
Engstr"om, Olof and Raeissi, Bahman and Hall, Steve and Buiu, Octavian and Lemme, Max C and Gottlob, HDB and Hurley, PK and Cherkaoui, Karim (2007) Navigation aids in the search for future high-< i> k dielectrics: Physical and electrical trends. : .
2005Microelectronics ReliabilityElectrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Decams, J.M. and Guillon, H. and Jiménez, C. and Audier, M. and Sénateur, J.P. and Dubourdieu, C. and Cadix, O. and O'Sullivan, B.J. and Modreanu, M. and Hurley, P.K. and Rusworth, S. and Leedham, T.J. and Davies, H. and Fang, Q. and Boyd, I. (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : .
2005Microelectronics ReliabilityPost deposition UV-induced O2 annealing of HfO2 thin films
Fang, Q. and Liaw, I. and Modreanu, M. and Hurley, P.K. and Boyd, I.W. (2005) Post deposition UV-induced O2 annealing of HfO2 thin films. : .
2005Materials Science and Engineering: BPulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
Dubourdieu, C and Roussel, H and Jimenez, C and Audier, M and S'enateur, JP and Lhostis, S and Auvray, L and Ducroquet, F and O'sullivan, BJ and Hurley, PK and others (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : .
2004Thin Solid FilmsInterface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD
Fang, Q and Zhang, J-Y and Wang, Z and Modreanu, M and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Hywel, D and Audier, MA and Jimenez, C and others (2004) Interface of ultrathin HfO< sub> 2 films deposited by UV-photo-CVD. : .
2004Thin Solid FilmsInterface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q. and Zhang, J.-Y. and Wang, Z. and Modreanu, M. and O'Sullivan, B.J. and Hurley, P.K. and Leedham, T.L. and Hywel, D. and Audier, M.A. and Jimenez, C. and Senateur, J.-P. and Boyd, I.W. (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : .
2004Electron Devices, IEEE Transactions onAvalanche photodiode-based active pixel imager
Marshall, GF and Jackson, JC and Denton, J and Hurley, PK and Braddell, O and Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : .
2003Physica E: Low-dimensional Systems and NanostructuresInvestigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices
Modreanu, M and Gartner, M and Aperathitis, E and Tomozeiu, N and Androulidaki, M and Cristea, D and Hurley, Paul (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2 superlattices for Si-based light-emitting devices. : .
2003Physica E: Low-Dimensional Systems and NanostructuresInvestigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
Modreanu, M. and Gartner, M. and Aperathitis, E. and Tomozeiu, N. and Androulidaki, M. and Cristea, D. and Hurley, P. (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : .
2003Thin Solid FilmsInvestigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Investigation of TiO< sub> 2-doped HfO< sub> 2 thin films deposited by photo-CVD. : .
2003Thin Solid FilmsCharacterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Characterisation of HfO< sub> 2 deposited by photo-induced chemical vapour deposition. : .
2002Journal of non-crystalline solidsNanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy
Zhang, Jun-Ying and Boyd, Ian W and O'Sullivan, BJ and Hurley, PK and Kelly, PV and Senateur, J-P (2002) Nanocrystalline TiO< sub> 2 films studied by optical, XRD and FTIR spectroscopy. : .
2002Applied physics lettersComparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Jackson, JC and Hurley, PK and Lane, B and Mathewson, A and Morrison, AP (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : .
2001Journal of Applied PhysicsSi (100)--SiO 2 interface properties following rapid thermal processing
OSullivan, BJ and Hurley, PK and Leveugle, C and Das, JH (2001) Si (100)--SiO 2 interface properties following rapid thermal processing. : .
2000Microelectronics ReliabilityInterface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation
O’Sullivan, BJ and Hurley, PK and Mathewson, A and Das, JH and Daniel, AD (2000) Interface properties of the Si (100)--SiO< sub> 2 system formed by rapid thermal oxidation. : .
1998MRS ProceedingsThe Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface
Hurley, PK and Leveugle, C and Mathewson, A and Doyle, D and Whiston, S and Prendergast, J and Lundgren, P (1998) The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface. : .
1998Microelectronics ReliabilityObservation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. : .
1998Microelectronics ReliabilityHot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour
Sheehan, E and Hurley, PK and Mathewson, A (1998) Hot carrier degradation mechanisms in sub-micron< i> p channel MOSFETs: Impact on low frequency (1/f) noise behaviour. : .
1997Microelectronic engineeringImpact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A and Lepert, A and Beinglass, I and Venkatesan, M (1997) Impact of the polysilicon doping level on the properties of the< i> silicon/oxide interface in polysilicon/oxide/silicon capacitor structures. : .
1996Microelectronics ReliabilityInvestigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions
Duane, R and Martin, A and O'Donovan, P and Hurley, P and O'Sullivan, P and Mathewson, A (1996) Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions. : .

Conference Publications

YearPublication
2013Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M. (2013) Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. : . [Details]
2013Device Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Device Research Conference (DRC), 2013 71st Annual. : .
201228th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790. : . [Details]
20125th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682. : . [Details]
2012Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : .
201213th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349. : . [Details]
2009Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695. : . [Details]
2009IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330. : . [Details]
20089th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151. : . [Details]
200625th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) 25th International Conference on Microelectronics. : .
2003International Reliability Physics Symposium (IRPS03)
J. C. Jackson, G. Healy, A-M. Kelleher, J. Alderman, J. Donnelly, P. K. Hurley, A. P. Morrison, and A. Mathewson.; (2003) International Reliability Physics Symposium (IRPS03). : .
2003Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Jackson, JC and Healy, G and Kelleher, AM and Alderman, J and Donnelly, J and Hurley, PK and Morrison, AP and Mathewson, A (2003) Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International. : .
2002Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
MacSweeney, D and McCarthy, KG and Floyd, L and Mathewson, A and Hurley, P and Power, JA and Kelly, SC (2002) Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on. : .
2002International Conference on Microelectronic Test Structures (ICMTS 2002)
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Mathewson,A.; Hurley,P.; Power,S.; Kelly,S.; (2002) International Conference on Microelectronic Test Structures (ICMTS 2002). : .
2001Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Jackson, JC and Morrison, AP and Hurley, P and Harrell, WR and Damjanovic, D and Lane, B and Mathewson, A (2001) Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on. : .
1999Plasma Process-Induced Damage, 1999 4th International Symposium on
Hurley, PK and Rodrigues, R and Kay, P and Thakur, RPS and Clarke, D and Sheehan, E and Mathewson, A (1999) Plasma Process-Induced Damage, 1999 4th International Symposium on. : .
1999Solid-State Device Research Conference, 1999. Proceeding of the 29th European
OSullivan, BJ and Hurley, PK and Mathewson, A and Beanland, R and Rodrigues, R and Kay, P (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : .
1996Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Moran, S and Hurley, PK and Mathewson, A (1996) Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on. : .
1995Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European
Kalnitsky, Alex and Hurley, P and Lepert, Arnaud and Mallardeau, C and Sheehan, Eoin and Mathewson, A (1995) Solid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European. : .
1994Solid State Device Research Conference, 1994. ESSDERC'94. 24th European
Hurley, PK and Moran, S and Wall, L and Mathewson, A and Mason, B (1994) Solid State Device Research Conference, 1994. ESSDERC'94. 24th European. : .
1993Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European
Hurley, PK and Wall, L and Mathewson, A (1993) Solid State Device Research Conference, 1993. ESSDERC'93. 23rd European. : .

Conference Contributions

YearPublication
2011AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA.
Eric Vogel , A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace (2011) AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA.. : .
2003Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September)
Hurley, P. K.; Moran, S.; Wall, L.; Mathewson, A.; Mason, B.; (2003) Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September). : .
2003Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA
Hurley, P. K.; Kalnitsky, A.; Lepert, A.; Moran, S.; Mathewson, A.; (2003) Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA. : .
2003Proceeding. ESSDERC 95, The Hague
Sheehan, E.; Mathewson, A.; Kalnitsky, A.; Hurley, P. K.; Lepert, A.; Mallardeau, C.; (2003) Proceeding. ESSDERC 95, The Hague. : .
2003Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble
Hurley, P. K.; Wall, L.; Mathewson, A.; (2003) Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble. : .

More Publications

YearPublication
2011The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : . [Details]
2011Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
Negara, MA,Goel, N,Bauza, D,Ghibaudo, G,Hurley, PK (2011) Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric. : . [Details]
2011Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures
Miranda, E,O'Connor, E,Hurley, PK (2011) Application of the quadrat counts method to the analysis of the spatial breakdown spots pattern in metal gate/MgO/InP structures. : . [Details]
2009Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics
Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics. : . [Details]
2009Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing
Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing. : . [Details]
2009Gd silicate: A high-k dielectric compatible with high temperature annealing
Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Gd silicate: A high-k dielectric compatible with high temperature annealing. : . [Details]
2009Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. : . [Details]
2009Degradation dynamics and breakdown of MgO gate oxides
Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. : . [Details]
2009Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2
Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : . [Details]
2009Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. : . [Details]
2009Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
Casey, P,O'Connor, E,Long, R,Brennan, B,Krasnikov, SA,O'Connell, D,Hurley, PK,Hughes, G (2009) Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces. : . [Details]
2009Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces
Casey, P, O'Connor, E, Long, R, Brennan, B, Krasnikov, SA, O'Connell, D, Hurley, PK, Hughes, G; (2009) Growth, Ambient Stability and Electrical Characterisation of Mgo Thin Films On Silicon Surfaces. : . [Details]
2008Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening
Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB; (2008) Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening. : . [Details]
2008Gentle FUSI NiSi metal gate process for high-k dielectric screening
Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB (2008) Gentle FUSI NiSi metal gate process for high-k dielectric screening. : . [Details]
2007Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation
Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K; (2007) Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation. : . [Details]
2007Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films
Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2007) Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films. : . [Details]
2007Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate
Volkos, SN, Bernardinia, S, Rigopoulos, N, Efthymiou, ES, Hawkins, ID, Hamilton, B, Dobaczewski, L, Hall, S, Hurley, PK, Delabie, A, Peaker, AR; (2007) Extrinsic Stacking Fault Generation Related to High-K Dielectric Growth On A Si Substrate. : . [Details]
2007Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation
Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K (2007) Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation. : . [Details]
2007Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate
Volkos, SN,Bernardinia, S,Rigopoulos, N,Efthymiou, ES,Hawkins, ID,Hamilton, B,Dobaczewski, L,Hall, S,Hurley, PK,Delabie, A,Peaker, AR (2007) Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate. : . [Details]
2007The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets
Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK; (2007) The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets. : . [Details]
2007Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends
Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K; (2007) Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends. : . [Details]
2006Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface
Dabrowski, J, Hurley, PK, Murota, J, Weber, ER; (2006) Special Issue - Proceedings of E-Mrs Spring Meeting Symposium L On Characterization of High-K Dielectric Materials, Nice, France, 29 May-2 June 2006 - Preface. : . [Details]
2006Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition
Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK; (2006) Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition. : .
2006Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films
Hurley, PK, Cherkaoui, K; (2006) Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films. : .
2005Optical and electrical characterization of hafnium oxide deposited by MOCVD
Lu, Y,Buiu, O,Hall, S,Hurley, PK (2005) Optical and electrical characterization of hafnium oxide deposited by MOCVD. : . [Details]
2005Post deposition UV-induced O-2 annealing of HfO2 thin films
Fang, Q,Liaw, I,Modreanu, M,Hurley, PK,Boyd, IW (2005) Post deposition UV-induced O-2 annealing of HfO2 thin films. : . [Details]
2005Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Decams, JM,Guillon, H,Jimenez, C,Audier, M,Senateur, JP,Dubourdieu, C,Cadix, O,O'Sullivan, BJ,Modreanu, M,Hurley, PK,Rusworth, S,Leedham, TJ,Davies, H,Fang, Q,Boyd, I (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : . [Details]
2005Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK (2005) Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. : . [Details]
2003Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD. : . [Details]
2002Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
Zhang, JY,Boyd, IW,O'Sullivan, BJ,Hurley, PK,Kelly, PV,Senateur, JP (2002) Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy. : . [Details]
1998Strategies for MilliRad sensitivity in PMOS dosimeters
Conneely, C,O'Connell, B,Hurley, P,Lane, W,Adams, L (1998) Strategies for MilliRad sensitivity in PMOS dosimeters. : .
1998Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
Leveugle, C,Hurley, PK,Mathewson, A,Moran, S,Sheehan, E,Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. : .
1996The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs
Hurley, PK,Sheehan, E,Moran, S,Mathewson, A (1996) The impact of oxide degradation on the low frequency (1/F) noise behaviour of P channel MOSFETs. : .

Honours and Awards

  • [2012] - Intel Outstanding Researcher Award
  • [2009] - Best Presentation Award 216th ECS Meeting
  • [1985] - IEE Departmental Prize (1985).
  • [1985] - William Henry McMenemey Engineering Faculty Prize (1985).
  • [2014] - Cork Conference Ambassador Award

Professional Associations

  • [2013] Member

Patents

  • [2014] P10945EP - Junctionless Transistors for 3D Monolithic Integration of CMOS Inverters

Committees

  • [2004] Insulating Films on Semiconductors (INFOS), Scientific Committee
  • [2002] Workshop on Dielectrics in Microelectronics (WODIM), General Chair in 2014 and 2004 Scientific Committee: 2003 to 2014
  • [2013] IEEE International Integrated Reliability Workshop (IIRW) , Scientific Committee
  • [2014] European Mamterials Research Society, Scientific Committee

Outreach Activities

  • Hosting Transition Year students at Tyndall

    Discovery Science Exhibition Cork


Employment

  • [1989] Liverpool University - Research Associate
  • [1992] University College Cork - Research Scientist
  • [1994] University College Cork - Senior Research Scientist
  • [2012] University College Cork - Senior Research Scientist and Head of Group

Education

  • [1985] Unversity of Liverpool - B.Eng.
  • [1990] University of Liverpool - PhD

Journal Activities

  • J Appl Phys - Referee
  • Applied Physics Letters - Referee
  • Microelectronics Reliability - Guest Editor
  • IEEE Electron Device Letters - Referee
  • IEEE Transactions on Electron Devices - Referee
  • J. Electrochem. Soc. - Referee
  • Semiconductor Science and Technology - Referee
  • J Vac Sci Technol - Referee
  • Microelectronic Engineering - Referee

Other Professional Activities

I am a member of the technical committee of the international conference “Insulating Films on Semiconductors (INFOS)” and the International “Workshop on Dielectrics in Microelectronics (WoDiM). INFOS and WoDiM are the two main oxide conferences in Europe. Acted as Chair of the 2004 and 2014 WoDiM events in Kinsale, Co. Cork and Co-Chair of the “Characterization of High-k Materials” Symposium L at the 2006 EMRS. I have acted as the external examiner for PhD students from, Dublin City University, Trinity College Dublin, Liverpool University (x4), Manchester University (x2), University Autonoma de Barcelona and the Catholic University of Leuven. I have also acted as the internal examiner for a number of UCC PhD and MSc students Reviewer of National and EU proposals

Teaching Interests

Semiconductor materials and devices for information and communication technologies

Specialist guest lectures covering recent technology challenges and developments for state of the art transistors

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Adi Negara PHD UCC A STUDY OF ELECTRON MOBILITY IN HFO2/TIN GATE MOSFETS
Rathnait Long PHD UCC A Study of the Electronic and Structural Properties of the High-κ/In0.53Ga0.47As System
Vladimir Djara PHD UCC Development of Inversion-Mode and Junctiolness InGaAs MOSFETs
Eamon O'Connor PHD UCC Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
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