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Leader in Integrated ICT Hardware & Systems

Paul Hurley - Head of Group - Nanoelectronic Materials & Devices

Paul Hurley

Contact

+353 (0)21 2346080
ucc.ie (at) ucc (dot) ie

  • MNS (Materials and Devices)

Dr. Hurley received his Ph.D. (1990) and B.Eng. (1985, 1st class honors) in Electronic Engineering at the University of Liverpool. Paul is a currently Senior Research Scientist and Head of the Nanoelectronic Materials and Devices Group at the Tyndall National Institute at University College Cork.  

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Research Grants

  • Understanding the nature of Interfaces in two dimensional Electronic Devices. (Science Foundation of Ireland) €435,610.00 (01-NOV-14 / 30-NOV-17)
  • Compound Semiconductors for 3D integration. (European Union) €482,628.00 (01-NOV-13 / 31-OCT-16)
  • Characteristaion of 2D Materials (Intel Corporation) €100,000.00 (01-MAR-14 / 28-FEB-15)
  • Copper diffusion barrier layers for advanced interconnect integration. (Science Foundation of Ireland) €262,243.00 (01-SEP-14 / 31-AUG-18)
  • Hopkins Communicaqtions WoDIM Conference 2014 (Industry) €51,150.00 (01-DEC-13 / 01-MAY-14)
  • Investigating the capacitance and conductance of narrow band gap MOS systems and its possible application to Cox extraction (Intel Corporation) €40,000.00 (01-APR-13 / 28-MAR-14)
  • "Investigating Emerging Non-Silicon Transistors (INVENT)" (Science Foundation Ireland) €851,853.00 (01-APR-10 / 31-AUG-15)
  • “Research into Emerging Nano-structured Electrodes for the splitting of Water (RENEW) (Science Foundation Ireland) €302,000.00 (01-DEC-13 / 30-NOV-16)
  • SYnthesis and functionality of chalcogenide NAnostructure for PhasSE change memories. (European Union) €306,686.00 (01-DEC-12 / 30-NOV-15)
  • The junctionless InGaAs MOSFET - The platform and the process. (Science Foundation of Ireland) €123,650.00 (01-JAN-12 / 01-FEB-14)
  • Dit extractions and interpretation on III-V device related structures (Intel Corporation) €40,000.00 (02-APR-12 / 29-MAR-13)
  • Fabrication and characterisation of Schottky contacts and capacitor structures on Chalcogenide passivated germanium. (Science Foundation of Ireland) €6,655.00 (01-JAN-12 / 31-DEC-12)
  • Future Oxides and Channel Materials for Ultimate Scaling (FOCUS) (Science Foundation of Ireland) €286,538.00 (01-OCT-09 / 31-DEC-15)
  • Epitaxial Nanostructured GaAs on silicon for next generation Electronics (ENGAGE) (Enterprise Ireland) €372,000.00 (03-FEB-09 / 31-AUG-12)
  • IRCSET-Marie Curie International Mobility Fellowships in Science Engineering and Technology (Irish Research Council for Science, Engineering & Technology (IRCSET)) €228,948.00 (01-OCT-09 / 30-SEP-12)
  • An investigation of carrier transport in compound semiconductor MOSFETs (Irish Research Council) €255,000.00 (01-OCT-09 / 28-SEP-12)
  • Total External Reflection X-ray Fluorescence Spectrometer for Compositional Analysis of Thin Films (Science Foundation of Ireland) €129,204.00 (01-DEC-07 / 30-MAY-08)
  • SFI "High Dielectric Constant Materials for Future ICT" (Science Foundation of Ireland) €729,850.00 (01-AUG-05 / 30-JUN-12)
  • SFI-Summer Student David Kohen (Science Foundation of Ireland) €5,795.00 (05-JUN-07 / 28-AUG-07)
  • EU 'Silicon-based Nanostructures & Nanodevices for Long Term Nanoelectronics Applications' (European Union) €128,925.00 (01-JAN-08 / 31-DEC-15)
  • SFI"Future Oxides & Channel Materials for Ultimate Scaling" FOCUS (Science Foundation of Ireland) €3,800.00 (01-MAY-08 / 31-OCT-08)
  • Fieldeffect controllable antifuse structures based on dielectric breakdown (Other: Not Listed) €15,000.00 (01-AUG-10 / 31-JUL-12)
  • Development of measurement capability for high-k/InGaAs systems and CV and GV analysis of samples from INTEL CR (Intel Corporation) €110,000.00 (01-APR-11 / 30-MAR-12)
  • FORME (Science Foundation Ireland) €618,512.00 (01-DEC-07 / 31-MAY-13)
  • Summer Student - David Hondagneu (Science Foundation of Ireland) €5,794.00 (05-JUN-06 / 28-AUG-06)
  • IRCSET Scholarship - Rathnait Long (Irish Research Council for Science, Engineering & Technology (IRCSET)) €48,006.00 (01-OCT-06 / 28-FEB-10)
  • ‘Deposition of High-k Dielectrics on III-V Substrates’ (Irish Research Council) €80,000.00 (02-OCT-06 / 25-SEP-09)
  • Pulling the Limits of NanoCMOS electronics (PULLNANO) EU Integrated Project (European Commission) €140,000.00 (01-JUN-06 / 30-SEP-09)
  • Silicon-based nanostructures and nanodevices for nanoelectronics (NANOSIL) EU Network of Excellence (European Commission) €130,000.00 (01-JAN-08 / 30-DEC-10)
  • Ferroelectrics for Europe (FLEUR) (European Commission) €285,000.00 (03-SEP-01 / 25-AUG-04)
  • Tantalum pentoxide photodeposition on silicon (TOPS) (European Commission) €345,000.00 (01-JUN-00 / 30-JUN-03)

Books

YearPublication
2010 Chapter 2: Gate Stacks
O. Engström, I. Z. Mitrovic, S. Hall, P. K. Hurley, K. Cherkaoui, S. Monaghan, H. D. B. Gottlob and M. C. Lemme (2010) Chapter 2: Gate Stacks. : John Wiley & Sons, Inc. [Details]
2003 Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2
Modreanu, M.,Hurley, P. K.,O'Sullivan, B. J.,O'Looney, B.,Senateur, J. P.,Rousell, H.,Rousell, F.,Audier, M.,Dubourdieu, C.,Boyd, I. W.,Fang, Q.,Leedham, T. L.,Rushworth, S.,Jones, A. C.,Davies, H.,Jimenez, C.,Blau, W. J.,Donegan, J. F.,Duke, A. F.,MacCraith, J. A.,McMillan, N. D.,Oconnor, G. M.,Omongain, E.,Toal, V.,McLaughlin, J. A (2003) Optical characterization of high-k dielectrics HfO(2) thin films obtained by MOCVD. Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Pts 1 and 2. : . [Details]
2010 Gate Stacks
O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) Gate Stacks. : John Wiley & Sons, Inc. [Details]

Peer Reviewed Journals

YearPublication
2002 Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes
J. C. Jackson, P. K. Hurley, A. P. Morrison, B. Lane, and A. Mathewson (2002) Comparing leakage currents and dark count rates in Geiger-Mode avalanche photodiodes. : Applied Physics Letters. [Details]
2011 Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
S. Monaghan, A. O'Mahony, K. Cherkaoui, É. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : Journal of Vacuum Science &Amp; Technology B. [Details]
2010 A systematic study of NH42S passivation '22%, 10%, 5%, or 1%
É. O'Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley (2010) A systematic study of NH42S passivation '22%, 10%, 5%, or 1%. : Journal of Applied Physics. [Details]
2003 Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
Modreanu, M,Gartner, A,Aperathitis, E,Tomozeiu, N,Androulidaki, M,Cristea, D,Hurley, P (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : Physica E-Low-Dimensional Systems & Nanostructures. [Details]
2011 The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : Microelectronic Engineering. [Details]
2012 Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : Journal of the Electrochemical Society. [Details]
2009 Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2009 Degradation dynamics and breakdown of MgO gate oxides
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K (2009) Degradation dynamics and breakdown of MgO gate oxides. : Microelectronic Engineering. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : Applied Physics Letters. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : Applied Physics Letters. [Details]
2011 Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors
Long, R. D., Shin, B., Monaghan, S., Cherkaoui, K., Cagnon, J., Stemmer, S., McIntyre, P. C., Hurley, P.K (2011) Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors. : Journal of the Electrochemical Society. [Details]
2012 The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : Microelectronic Engineering. [Details]
2011 On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
Sonnet, A. M. and Galatage, R. V. and Hurley, P. K. and Pelucchi, E. and Thomas, K. K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Wallace, R. M. and Vogel, E. M (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : Applied Physics Letters. [Details]
2011 Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs
Sonnet, A. M. and Galatage, R. V. and Hurley, P. M. and Pelucchi, E. and Thomas, K. and Gocalinska, A. and Huang, J. and Goel, N. and Bersuker, G. and Kirk, W. P. and Hinkle, C. L. and Vogel, E. M (2011) Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs. : Microelectronic Engineering. [Details]
2003 Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size
MacSweeney, D,McCarthy, KG,Floyd, L,Duane, R,Hurley, P,Power, JA,Kelly, SC,Mathewson, A (2003) Improving the accuracy and efficiency of junction capacitance characterization: Strategies for probing configuration and data set size. : IEEE Transactions on Semiconductor Manufacturing. [Details]
1994 EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A (1994) EVALUATION OF HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS AT LOW GATE BIAS. : Microelectronics Journal. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chem. Phys. Chem. [Details]
2008 Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : J. Mat. Chem. [Details]
2007 Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : Microelectronics Reliability. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
1995 Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]
Hurley, P. K.; Wall, L.; Moran, S.; Mathewson, A (1995) Capacitance-Voltage Characteristics of Heavily Doped Silicon-Insulator-Silicon Capacitors [B2669]. : Semiconductor Science and Technology. [Details]
1996 Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]
Hurley, P. K.; Sheehan, E.; Moran, S.; Mathewson, A (1996) Impact of Oxide Degradation on the Low Frequency (1/f) Noise Behaviour of p Channel MO'SFETs [B2671]. : Microelectronics and Reliability. [Details]
2003 Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Duane,R.; Hurley, P.; Power, J.A.; Kelly, S.C.; Mathewson, A (2003) Improving the Accuracy and Efficiency of Junction Capacitance Characterization: Strategies for Probing Configuration and Data Set Size. : IEEE Transactions on Semiconductor Manufacturing. [Details]
1995 HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL
MEEHAN, A,OSULLIVAN, P,HURLEY, P,MATHEWSON, A (1995) HOT-CARRIER RELIABILITY LIFETIMES AS PREDICTED BY BERKELEYS MODEL. : Quality and Reliability Engineering International. [Details]
2012 Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : Electrochemical Society Transactions. [Details]
2013 An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : Journal of Applied Physics. [Details]
2008 Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2)
Afanas'ev, V. V.,Badylevich, M.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al(2)O(3) and HfO(2). : Applied Physics Letters. [Details]
2013 Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2013 Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. [Details]
2011 Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : Advanced Materials Research. [Details]
1996 Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping
Yuan, XJ,Kivi, M,Taylor, S,Hurley, P (1996) Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFET's studied by three-level charge pumping. : IEEE Electron Device Letters. [Details]
2013 Chemical and electrical characterization of the HfO2/InAlAs interface
Brennan, B. and Galatage, R. V. and Thomas, K. and Pelucchi, E. and Hurley, P. K. and Kim, J. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : Journal of Applied Physics. [Details]
2013 Electrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : Microelectronic Engineering. [Details]
2013 Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
Saura, X., Suñé, J., Monaghan, S., Hurley, P.K., Miranda, E (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : Journal of Applied Physics. [Details]
2008 In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : Applied Physics Letters. [Details]
2009 Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B (2009) Band offsets at interfaces of (100)InxGa1-xAs (0 <= x <= 0.53) with Al2O3 and HfO2. : Microelectronic Engineering. [Details]
2009 Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas'ev, V. V.,Stesmans, A.,Brammertz, G.,Delabie, A.,Sionke, S.,O'Mahony, A.,Povey, I. M.,Pemble, M. E.,O'Connor, E.,Hurley, P. K.,Newcomb, S. B (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : Applied Physics Letters. [Details]
2011 Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : Journal of Vacuum Science & Technology B. [Details]
2012 Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : IEEE Transactions on Electron Devices. [Details]
2009 TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : IEEE Electron Device Letters. [Details]
2011 Transport and interface states in high-κ LaSiO x dielectric
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K (2011) Transport and interface states in high-κ LaSiO x dielectric. : Microelectronic Engineering. [Details]
2011 A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : Journal of Applied Physics. [Details]
2011 Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : Electrochemical Society Transactions. [Details]
2010 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : Applied Physics Letters. [Details]
2009 Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : Electrochemical Society Transactions. [Details]
2010 Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : Electrochemical Society Transactions. [Details]
2012 On the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : Semiconductor Science and Technology. [Details]
2014 Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
Cabrera, W and Brennan, B and Dong, H and O'Regan, TP and Povey, IM and Monaghan, S and O'Connor, \'E and Hurley, PK and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : Applied Physics Letters. [Details]
2009 Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2. : Applied Physics Letters. [Details]
2009 Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Energy barriers at interfaces between (100) InxGa1- xAs (0= x= 0.53) and atomic-layer deposited Al2O3 and HfO2. : Applied Physics Letters. [Details]
2009 Band offsets at interfaces of (100) In< i> x
Afanas’ev, VV and Stesmans, Andre and Brammertz, G and Delabie, Annelies and Sionke, S and O’Mahony, A and Povey, IM and Pemble, ME and O’Connor, E and Hurley, PK and others (2009) Band offsets at interfaces of (100) In< i> x. : Microelectronic Engineering. [Details]
2004 Electrical evaluation of defects at the Si(100)/HfO2 interface
O'Sullivan, B. J.,Hurley, P. K.,O'Connor, E.,Modreanu, M.,Roussel, H.,Jimenez, C.,Dubourdieu, C.,Audier, M.,Senateur, J. P (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : Journal of the Electrochemical Society. [Details]
2009 TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : IEEE Electron Device Letters. [Details]
2000 Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) of tantalum pentoxide
Kelly, PV,Mooney, MB,Beechinor, JT,O'Sullivan, BJ,Hurley, PK,Crean, GM,Zhang, JY,Boyd, IW,Paillous, M,Jimenez, C,Senateur, JP (2000) Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) of tantalum pentoxide. : Advanced Materials. [Details]
2005 Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Decams, J. M.,Guillon, H.,Jimenez, C.,Audier, M.,Senateur, J. P.,Dubourdieu, C.,Cadix, O.,O'Sullivan, B. J.,Modreanu, M.,Hurley, P. K.,Rusworth, S.,Leedham, T. J.,Davies, H.,Fang, Q.,Boyd, I (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : Microelectronics Reliability. [Details]
2008 Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : Journal of Applied Physics. [Details]
2011 A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
O’Connor, \'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : Journal of Applied Physics. [Details]
2008 Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2
Afanasev, VV and Badylevich, Mikhail and Stesmans, Andre and Brammertz, Guy and Delabie, Annelies and Sionke, S and OMahony, A and Povey, IM and Pemble, ME and OConnor, E and others (2008) Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al 2 O 3 and HfO 2. : Applied Physics Letters. [Details]
2014 Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Cabrera, W,Brennan, B,Dong, H,O'Regan, TP,Povey, IM,Monaghan, S,O'Connor, E,Hurley, PK,Wallace, RM,Chabal, YJ (2014) Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing. : Applied Physics Letters. [Details]
2013 An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : Journal of Applied Physics. [Details]
2013 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : IEEE Transactions on Device and Materials Reliability. [Details]
2012 Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric
Djara, V,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2012) Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric. : IEEE Transactions On Electron Devices. [Details]
2012 A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures
Walsh, LA,Hughes, G,Hurley, PK,Lin, J,Woicik, JC (2012) A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures. : Applied Physics Letters. [Details]
2011 Investigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : Microelectronic Engineering. [Details]
2011 Investigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : Microelectronic Engineering. [Details]
2010 Electron energy band alignment at the (100)Si/MgO interface
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK (2010) Electron energy band alignment at the (100)Si/MgO interface. : Applied Physics Letters. [Details]
2010 Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
O'Regan, TP,Hurley, PK,Soree, B,Fischetti, MV (2010) Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections. : Applied Physics Letters. [Details]
2010 Electron band alignment between (100)InP and atomic-layer deposited Al2O3
Chou, HY,Afanas'ev, VV,Stesmans, A,Lin, HC,Hurley, PK,Newcomb, SB (2010) Electron band alignment between (100)InP and atomic-layer deposited Al2O3. : Applied Physics Letters. [Details]
2009 Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as
Brennan, B, Milojevic, M, Kim, HC, Hurley, PK, Kim, J, Hughes, G, Wallace, RM (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2o Oxidation of Al2o3 On In0.53ga0.47as. : Electrochemical and Solid State Letters. [Details]
2009 Electrical characterization of the soft breakdown failure mode in MgO layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : Applied Physics Letters. [Details]
2009 Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : Applied Physics Letters. [Details]
2009 TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : IEEE Electron Device Letters. [Details]
2009 Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As
Brennan, B,Milojevic, M,Kim, HC,Hurley, PK,Kim, J,Hughes, G,Wallace, RM (2009) Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As. : Electrochemical and Solid State Letters. [Details]
2009 Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : Journal of Applied Physics. [Details]
2009 Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : Applied Physics Letters. [Details]
2008 Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2
Afanas'ev, VV, Badylevich, M, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB (2008) Energy Barriers At Interfaces of (100)Gaas With Atomic Layer Deposited Al2o3 and Hfo2. : Applied Physics Letters. [Details]
2008 In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : Applied Physics Letters. [Details]
2008 High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Raeissi, B,Piscator, J,Engstrom, O,Hall, S,Buiu, O,Lemme, MC,Gottlob, HDB,Hurley, PK,Cherkaoui, K,Osten, HJ (2008) High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. : Solid-State Electronics. [Details]
2008 Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : Chemphyschem. [Details]
2008 Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy
Dobaczewski, L, Bernardini, S, Kruszewski, P, Hurley, PK, Markevich, VP, Hawkins, ID, Peaker, AR (2008) Energy State Distributions of The P-B Centers At The (100), (110), and (111) Si/Sio2 Interfaces Investigated By Laplace Deep Level Transient Spectroscopy. : Applied Physics Letters. [Details]
2001 XPS investigation of UV-annealed ultrathin Ta(2)O(5) films on silicon
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) XPS investigation of UV-annealed ultrathin Ta(2)O(5) films on silicon. : Journal De Physique Iv. [Details]
2001 Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy
Zhang, JY,Fang, Q,Wu, JX,Xu, CY,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Audier, MA,Senateur, JP,Boyd, IW (2001) Photo-CVD deposited TiO(2) films studied by Raman and XPS spectroscopy. : Journal De Physique Iv. [Details]
2000 Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source
Zhang, JY,Boyd, IW,Mooney, MB,Hurley, PK,Beechinor, JT,O'Sullivan, BJ,Kelly, PV,Crean, GM,Senateur, JP,Jimenez, C,Paillous, M (2000) Thin tantalum pentoxide films deposited by photo-induced chemical vapor deposition using an injection liquid source. : Applied Physics Part A: Materials Science & Processing. [Details]
2013 Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, \'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : ECS Transactions. [Details]
2008 In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : Applied Physics Letters. [Details]
2003 SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization
MacSweeney, D and McCarthy, KG and Floyd, L and Duane, R and Hurley, P and Power, JA and Kelly, SC and Mathewson, A (2003) SPECIAL SECTION ON THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS TEST STRUCTURES-SPECIAL SECTION PAPERS-Improving the Accuracy and Efficiency of Junction Capacitance Characterization. : IEEE Transactions on Semiconductor Manufacturing. [Details]
2014 Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W (2014) Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers. : Applied Physics Letters. [Details]
2014 Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Gajula, D.R. and Baine, P. and Modreanu, M. and Hurley, P.K. and Armstrong, B.M. and McNeill, D.W (2014) Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers. : Applied Physics Letters. [Details]
2014 A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures
Walsh, LA,Hurley, PK,Lin, J,Cockayne, E,O'Regan, TP,Woicik, JC,Hughes, G (2014) A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures. : Applied Surface Science. [Details]
2013 Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors
Monaghan, S,O'Connor, E,Povey, IM,Sheehan, BJ,Cherkaoui, K,Hutchinson, BJA,Hurley, PK,Ferdousi, F,Rios, R,Kuhn, KJ,Rahman, A (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors. : Journal of Vacuum Science & Technology B. [Details]
2013 Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
Saura, X,Sune, J,Monaghan, S,Hurley, PK,Miranda, E (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : Journal of Applied Physics. [Details]
2010 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : Applied Physics Letters. [Details]
2003 Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
Modreanu, M.,Gartner, A.,Aperathitis, E.,Tomozeiu, N.,Androulidaki, M.,Cristea, D.,Hurley, P (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : Physica E-Low-Dimensional Systems & Nanostructures. [Details]
2005 Post deposition UV-induced O(2) annealing of HfO(2) thin films
Fang, Q.,Liaw, I.,Modreanu, M.,Hurley, P. K.,Boyd, I. W (2005) Post deposition UV-induced O(2) annealing of HfO(2) thin films. : Microelectronics Reliability. [Details]
2004 Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q.,Zhang, J. Y.,Wang, Z.,Modreanu, M.,O'Sullivan, B. J.,Hurley, P. K.,Leedham, T. L.,Hywel, D.,Audier, M. A.,Jimenez, C.,Senateur, J. P.,Boyd, I. W (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : Thin Solid Films. [Details]
2014 A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures
Lin, J,Walsh, L,Hughes, G,Woicik, JC,Povey, IM,O'Regan, TP,Hurley, PK (2014) A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures. : Journal of Applied Physics. [Details]
2013 Electrically active interface defects in the In< sub> 0.53
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, \'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53. : Microelectronic Engineering. [Details]
2013 Chemical and electrical characterization of the HfO2/InAlAs interface
Brennan, B,Galatage, RV,Thomas, K,Pelucchi, E,Hurley, PK,Kim, J,Hinkle, CL,Vogel, EM,Wallace, RM (2013) Chemical and electrical characterization of the HfO2/InAlAs interface. : Journal of Applied Physics. [Details]
2013 Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures
Walsh, LA,Hughes, G,Lin, J,Hurley, PK,O'Regan, TP,Cockayne, E,Woicik, JC (2013) Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures. : Physical Review B. [Details]
2013 Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress
Saura, X,Moix, D,Sune, J,Hurley, PK,Miranda, E (2013) Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. : Microelectronics Reliability. [Details]
2013 Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : Journal of Vacuum Science & Technology B. [Details]
2013 Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : Solid-State Electronics. [Details]
2013 Electrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V,O'Regan, TP,Cherkaoui, K,Schmidt, M,Monaghan, S,O'Connor, E,Povey, IM,O'Connell, D,Pemble, ME,Hurley, PK (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : Microelectronic Engineering. [Details]
2012 Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
O'Connor, E,Cherkaoui, K,Monaghan, S,O'Connell, D,Povey, I,Casey, P,Newcomb, SB,Gomeniuk, YY,Provenzano, G,Crupi, F,Hughes, G,Hurley, PK (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : Journal of Applied Physics. [Details]
2012 Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : Journal of the Electrochemical Society. [Details]
2012 Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3
Chou, HY,O'Connor, E,Hurley, PK,Afanas'ev, VV,Houssa, M,Stesmans, A,Ye, PD,Newcomb, SB (2012) Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3. : Applied Physics Letters. [Details]
2012 On the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : Semiconductor Science and Technology. [Details]
2011 Transport and interface states in high-kappa LaSiOx dielectric
Gomeniuk, YY,Gomeniuk, YV,Tyagulskii, IP,Tyagulskii, SI,Nazarov, AN,Lysenko, VS,Cherkaoui, K,Monaghan, S,Hurley, PK (2011) Transport and interface states in high-kappa LaSiOx dielectric. : Microelectronic Engineering. [Details]
2011 On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors
Sonnet, AM,Galatage, RV,Hurley, PK,Pelucchi, E,Thomas, KK,Gocalinska, A,Huang, J,Goel, N,Bersuker, G,Kirk, WP,Hinkle, CL,Wallace, RM,Vogel, EM (2011) On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors. : Applied Physics Letters. [Details]
2011 In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition
Milojevic, M,Contreras-Guerrero, R,O'Connor, E,Brennan, B,Hurley, PK,Kim, J,Hinkle, CL,Wallace, RM (2011) In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition. : Applied Physics Letters. [Details]
2011 A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
O'Connor, E, Brennan, B, Djara, V, Cherkaoui, K, Monaghan, S, Newcomb, SB, Contreras, R, Milojevic, M, Hughes, G, Pemble, ME, Wallace, RM, Hurley, PK (2011) A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers. : Journal of Applied Physics. [Details]
2011 Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
Benedicto, M, Galiana, B, Molina-Aldareguia, JM, Monaghan, S, Hurley, PK, Cherkaoui, K, Vazquez, L, Tejedor, P (2011) Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application. : Nanoscale Research Letters. [Details]
2011 Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
Negara, MA,Veksler, D,Huang, J,Ghibaudo, G,Hurley, PK,Bersuker, G,Goel, N,Kirsch, P (2011) Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors. : Applied Physics Letters. [Details]
2011 Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : Journal of Vacuum Science & Technology B. [Details]
2011 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment
O'Connor, E,Monaghan, S,Cherkaoui, K,Povey, IM,Hurley, PK (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment. : Applied Physics Letters. [Details]
2011 Multi-technique characterisation of MOVPE-grown GaAs on Si
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : Microelectronic Engineering. [Details]
2011 Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures
O'Regan, TP,Hurley, PK (2011) Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures. : Applied Physics Letters. [Details]
2010 Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
Young, RJ,Mereni, LO,Petkov, N,Knight, GR,Dimastrodonato, V,Hurley, PK,Hughes, G,Pelucchi, E (2010) Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells. : Journal of Crystal Growth. [Details]
2008 Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
Cherkaoui, K,Monaghan, S,Negara, MA,Modreanu, M,Hurley, PK,O'Connell, D,McDonnell, S,Hughes, G,Wright, S,Barklie, RC,Bailey, P,Noakes, TCQ (2008) Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation. : Journal of Applied Physics. [Details]
2009 Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)
Shin, B,Cagnon, J,Long, RD,Hurley, PK,Stemmer, S,McIntyre, PC (2009) Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001). : Electrochemical and Solid State Letters. [Details]
2009 Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB (2009) Energy Barriers At Interfaces Between (100) Inxga1-Xas (0 ≪= X ≪= 0.53) and Atomic-Layer Deposited Al2o3 and Hfo2. : Applied Physics Letters. [Details]
2009 Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : Journal of Applied Physics. [Details]
2009 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : Solid-State Electronics. [Details]
2009 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : Solid-State Electronics. [Details]
2008 Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : Journal of Applied Physics. [Details]
2008 High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : Solid-State Electronics. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
2007 Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks
Hurley, PK,Cherkaoui, K,McDonnell, S,Hughes, G,Groenland, AW (2007) Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks. : Microelectronics Reliability. [Details]
2005 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
Dubourdieu, C,Roussel, H,Jimenez, C,Audier, M,Senateur, JP,Lhostis, S,Auvray, L,Ducroquet, F,O'Sullivan, BJ,Hurley, PK,Rushworth, S,Hubert-Pfalzgraf, L (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : Materials Science and Engineering B-Solid State Materials For Advanced Technology. [Details]
2004 Electrical evaluation of defects at the Si(100)/HfO2 interface
O'Sullivan, BJ,Hurley, PK,O'Connor, E,Modreanu, M,Roussel, H,Jimenez, C,Dubourdieu, C,Audier, M,Senateur, JP (2004) Electrical evaluation of defects at the Si(100)/HfO2 interface. : Journal of the Electrochemical Society. [Details]
2002 Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing
Hurley, PK,O'Sullivan, BJ,Cubaynes, FN,Stolk, PA,Widdershoven, FP,Das, JH (2002) Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing. : Journal of the Electrochemical Society. [Details]
2001 Si(100)-SiO2 interface properties following rapid thermal processing
O'Sullivan, BJ,Hurley, PK,Leveugle, C,Das, JH (2001) Si(100)-SiO2 interface properties following rapid thermal processing. : Journal of Applied Physics. [Details]
2001 Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD
O'Sullivan, BJ,O'Connor, E,Howley, R,Hurley, PK,Zhang, JY,Kaliwoh, N,Fang, Q,Boyd, IW,Dubourdieu, C,Audier, MA,Senateur, JP,Davies, HO,Leedham, TJ,Jones, AC,Semmache, B (2001) Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD. : Journal De Physique Iv. [Details]
1999 Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source
Mooney, MB,Hurley, PK,O'Sullivan, BJ,Beechinor, JT,Zhang, JY,Boyd, IW,Kelly, PV,Senateur, JP,Crean, GM,Jimenez, C,Paillous, M (1999) Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source. : Microelectronic Engineering. [Details]
1995 CAPACITANCE-VOLTAGE CHARACTERISTICS OF HEAVILY-DOPED SILICON INSULATOR SILICON CAPACITORS
HURLEY, PK,WALL, L,MORAN, S,MATHEWSON, A (1995) CAPACITANCE-VOLTAGE CHARACTERISTICS OF HEAVILY-DOPED SILICON INSULATOR SILICON CAPACITORS. : Semiconductor Science and Technology. [Details]
2009 Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2
Afanas'ev, VV,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB (2009) Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2. : Applied Physics Letters. [Details]
2009 Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : Microelectronics Reliability. [Details]
2009 Band Offsets At Interfaces of (100)Inxga1-Xas (0 ?= X ?= 0.53) With Al2o3 and Hfo2
Afanas'ev, VV, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, IM, Pemble, ME, O'Connor, E, Hurley, PK, Newcomb, SB (2009) Band Offsets At Interfaces of (100)Inxga1-Xas (0 ?= X ?= 0.53) With Al2o3 and Hfo2. : Microelectronic Engineering. [Details]
2008 Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : Journal of the Electrochemical Society. [Details]
2003 Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing
Hurley, PK,Stesmans, A,Afanas'ev, VV,O'Sullivan, BJ,O'Callaghan, E (2003) Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing. : Journal of Applied Physics. [Details]
2010 Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Shin, B,Weber, JR,Long, RD,Hurley, PK,Van de Walle, CG,McIntyre, PC (2010) Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates. : Applied Physics Letters. [Details]
2009 Degradation Dynamics and Breakdown of MgO Gate Oxides
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : Microelectronic Engineering. [Details]
2009 Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : Journal of Applied Physics. [Details]
2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : Applied Physics Letters. [Details]
2009 Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : Journal of Vacuum Science & Technology B. [Details]
2009 Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001)
Shin, B, Cagnon, J, Long, RD, Hurley, PK, Stemmer, S, McIntyre, PC (2009) Unpinned Interface Between Al2o3 Gate Dielectric Layer Grown By Atomic Layer Deposition and Chemically Treated N-In0.53ga0.47as(001). : Electrochemical and Solid State Letters. [Details]
2008 Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy
Dobaczewski, L,Bernardini, S,Kruszewski, P,Hurley, PK,Markevich, VP,Hawkins, ID,Peaker, AR (2008) Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy. : Applied Physics Letters. [Details]
2008 Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : Journal of the Electrochemical Society. [Details]
2008 Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : Chemphyschem. [Details]
2008 In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : Applied Physics Letters. [Details]
2008 Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2
Afanas'ev, VV,Badylevich, M,Stesmans, A,Brammertz, G,Delabie, A,Sionke, S,O'Mahony, A,Povey, IM,Pemble, ME,O'Connor, E,Hurley, PK,Newcomb, SB (2008) Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2. : Applied Physics Letters. [Details]
2007 Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : Microelectronics Reliability. [Details]
2005 Interface states and Pb defects at the Si(100)/HfO2 interface
Hurley, PK,O'Sullivan, BJ,Afanas'ev, VV,Stesmans, A (2005) Interface states and Pb defects at the Si(100)/HfO2 interface. : Electrochemical and Solid State Letters. [Details]
2004 Avalanche photodiode-based active pixel imager
Marshall, GF,Jackson, JC,Denton, J,Hurley, PK,Braddell, O,Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : IEEE Transactions On Electron Devices. [Details]
2004 Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q,Zhang, JY,Wang, Z,Modreanu, M,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Hywel, D,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : Thin Solid Films. [Details]
2003 Interface of tantalum oxide films on silicon by UV annealing at low temperature
Fang, Q,Zhang, JY,Wang, ZM,Wu, JX,O'Sullivan, BJ,Hurley, PK,Leedham, TL,Davies, H,Audier, MA,Jimenez, C,Senateur, JP,Boyd, IW (2003) Interface of tantalum oxide films on silicon by UV annealing at low temperature. : Thin Solid Films. [Details]
2002 Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Jackson, JC,Hurley, PK,Lane, B,Mathewson, A,Morrison, AP (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : Applied Physics Letters. [Details]
1997 Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation
Kalnitsky, A,Hurley, PK,Lepert, A (1997) Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation. : Journal of the Electrochemical Society. [Details]

Other Journals

YearPublication
2004 Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Fang, Q. and Zhang, J.-Y. and Wang, Z. and Modreanu, M. and O'Sullivan, B.J. and Hurley, P.K. and Leedham, T.L. and Hywel, D. and Audier, M.A. and Jimenez, C. and Senateur, J.-P. and Boyd, I.W (2004) Interface of ultrathin HfO2 films deposited by UV-photo-CVD. : Thin Solid Films. [Details]
1996 Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions
Duane, R and Martin, A and O'Donovan, P and Hurley, P and O'Sullivan, P and Mathewson, A (1996) Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions. : Microelectronics Reliability. [Details]
1998 Hot carrier degradation mechanisms in sub-micron< i> p
Sheehan, E and Hurley, PK and Mathewson, A (1998) Hot carrier degradation mechanisms in sub-micron< i> p. : Microelectronics Reliability. [Details]
1998 Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A (1998) Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures. : Microelectronics Reliability. [Details]
2000 Interface properties of the Si (100)--SiO< sub> 2
O’Sullivan, BJ and Hurley, PK and Mathewson, A and Das, JH and Daniel, AD (2000) Interface properties of the Si (100)--SiO< sub> 2. : Microelectronics Reliability. [Details]
2003 Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices
Modreanu, M. and Gartner, M. and Aperathitis, E. and Tomozeiu, N. and Androulidaki, M. and Cristea, D. and Hurley, P (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices. : Physica E: Low-Dimensional Systems and Nanostructures. [Details]
2002 Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Jackson, JC and Hurley, PK and Lane, B and Mathewson, A and Morrison, AP (2002) Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes. : Applied physics letters. [Details]
2004 Avalanche photodiode-based active pixel imager
Marshall, GF and Jackson, JC and Denton, J and Hurley, PK and Braddell, O and Mathewson, A (2004) Avalanche photodiode-based active pixel imager. : Electron Devices, IEEE Transactions on. [Details]
2005 Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Decams, J.M. and Guillon, H. and Jiménez, C. and Audier, M. and Sénateur, J.P. and Dubourdieu, C. and Cadix, O. and O'Sullivan, B.J. and Modreanu, M. and Hurley, P.K. and Rusworth, S. and Leedham, T.J. and Davies, H. and Fang, Q. and Boyd, I (2005) Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. : Microelectronics Reliability. [Details]
2002 Nanocrystalline TiO< sub> 2
Zhang, Jun-Ying and Boyd, Ian W and O'Sullivan, BJ and Hurley, PK and Kelly, PV and Senateur, J-P (2002) Nanocrystalline TiO< sub> 2. : Journal of non-crystalline solids. [Details]
2007 Navigation aids in the search for future high-< i> k
Engstr\"om, Olof and Raeissi, Bahman and Hall, Steve and Buiu, Octavian and Lemme, Max C and Gottlob, HDB and Hurley, PK and Cherkaoui, Karim (2007) Navigation aids in the search for future high-< i> k. : Solid-State Electronics. [Details]
2001 Si (100)--SiO 2 interface properties following rapid thermal processing
OSullivan, BJ and Hurley, PK and Leveugle, C and Das, JH (2001) Si (100)--SiO 2 interface properties following rapid thermal processing. : Journal of Applied Physics. [Details]
2003 Investigation of TiO< sub> 2
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Investigation of TiO< sub> 2. : Thin Solid Films. [Details]
2004 Interface of ultrathin HfO< sub> 2
Fang, Q and Zhang, J-Y and Wang, Z and Modreanu, M and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Hywel, D and Audier, MA and Jimenez, C and others (2004) Interface of ultrathin HfO< sub> 2. : Thin Solid Films. [Details]
2003 Characterisation of HfO< sub> 2
Fang, Q and Zhang, J-Y and Wang, ZM and Wu, JX and O'Sullivan, BJ and Hurley, PK and Leedham, TL and Davies, H and Audier, MA and Jimenez, C and others (2003) Characterisation of HfO< sub> 2. : Thin Solid Films. [Details]
2003 Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2
Modreanu, M and Gartner, M and Aperathitis, E and Tomozeiu, N and Androulidaki, M and Cristea, D and Hurley, Paul (2003) Investigation on preparation and physical properties of nanocrystalline Si/SiO< sub> 2. : Physica E: Low-dimensional Systems and Nanostructures. [Details]
2005 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
Dubourdieu, C and Roussel, H and Jimenez, C and Audier, M and S\'enateur, JP and Lhostis, S and Auvray, L and Ducroquet, F and O'sullivan, BJ and Hurley, PK and others (2005) Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. : Materials Science and Engineering: B. [Details]
1998 The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface
Hurley, PK and Leveugle, C and Mathewson, A and Doyle, D and Whiston, S and Prendergast, J and Lundgren, P (1998) The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface. : MRS Proceedings. [Details]
1997 Impact of the polysilicon doping level on the properties of the< i> silicon/oxide
Leveugle, C and Hurley, PK and Mathewson, A and Moran, S and Sheehan, E and Kalnitsky, A and Lepert, A and Beinglass, I and Venkatesan, M (1997) Impact of the polysilicon doping level on the properties of the< i> silicon/oxide. : Microelectronic engineering. [Details]
2005 Post deposition UV-induced O2 annealing of HfO2 thin films
Fang, Q. and Liaw, I. and Modreanu, M. and Hurley, P.K. and Boyd, I.W (2005) Post deposition UV-induced O2 annealing of HfO2 thin films. : Microelectronics Reliability. [Details]

Conference Publications

YearPublication
Year2003 PublicationInternational Reliability Physics Symposium (IRPS03)
J. C. Jackson, G. Healy, A-M. Kelleher, J. Alderman, J. Donnelly, P. K. Hurley, A. P. Morrison, and A. Mathewson (2003) Defect passivation and dark count in Geiger-mode avalanche photodiodes . In: * eds. : . [Details]
Year2012 PublicationUltimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Study of interface and oxide defects in high-k/In 0.53 Ga 0.47 As n-MOSFETs. : . [Details]
Year2012 Publication13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K (2012) Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs. : . [Details]
Year2002 PublicationInternational Conference on Microelectronic Test Structures (ICMTS 2002)
MacSweeney,D.; McCarthy,K.G.; Floyd,L.; Mathewson,A.; Hurley,P.; Power,S.; Kelly,S (2002) Influence of Probing Configuration and Data Set Size for Bipolar Capacitance Determination . In: Walton,A.J.; Mathewson,A eds. : . [Details]
Year2013 PublicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Cabrera, W., Dong, H., Brennan, B., O'Connor, E., Carolan, P., Galatage, R., Monaghan, S., Povey, I., Hurley, P.K., Hinkle, C.L., Chabal, Y., Wallace, R.M (2013) Atomic layer deposition of HfO2 on III-V semiconductors - An interfacial chemistry perspective. : . [Details]
Year2012 Publication5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K (2012) Can metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al 2O 3/In 0.53Ga 0.47As/InP MOSFET characteristics? . In: Dielectric Science and Technology Division of ECS,Electronics and Photonics,Sensor,New Technology Subcommittee,IEEE Electron Device Society (EDS) eds. : . [Details]
Year2008 Publication9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A (2008) Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling. : . [Details]
Year2009 PublicationIEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K (2009) Soft breakdown in MgO dielectric layers. : . [Details]
Year2012 Publication28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K (2012) Spatial statistics for micro/nanoelectronics and materials science. : . [Details]
Year2002 PublicationMicroelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
MacSweeney, D and McCarthy, KG and Floyd, L and Mathewson, A and Hurley, P and Power, JA and Kelly, SC (2002) Influence of probing configuration and data set size for bipolar junction capacitance determination. : . [Details]
Year1996 PublicationMicroelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Moran, S and Hurley, PK and Mathewson, A (1996) Test structure for investigating activated doping concentrations in polycrystalline silicon. : . [Details]
Year2001 PublicationMicroelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Jackson, JC and Morrison, AP and Hurley, P and Harrell, WR and Damjanovic, D and Lane, B and Mathewson, A (2001) Process monitoring and defect characterization of single photon avalanche diodes. : . [Details]
Year1995 PublicationSolid State Device Research Conference, 1995. ESSDERC'95. Proceedings of the 25th European
Kalnitsky, Alex and Hurley, P and Lepert, Arnaud and Mallardeau, C and Sheehan, Eoin and Mathewson, A (1995) Phosphorus in the Polysilicon TiSi 2 System: Dopant Redistribution. : . [Details]
Year1994 PublicationSolid State Device Research Conference, 1994. ESSDERC'94. 24th European
Hurley, PK and Moran, S and Wall, L and Mathewson, A and Mason, B (1994) Mechanisms of Low Frequency Noise in P Channel MOSFETs. : . [Details]
Year2006 Publication25th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee (2006) Electrical properties of HfO(2) films formed by ion assisted deposition. 2006. : . [Details]
Year1993 PublicationSolid State Device Research Conference, 1993. ESSDERC'93. 23rd European
Hurley, PK and Wall, L and Mathewson, A (1993) Double Polysilicon Capacitors in 1 $\mu$m Analogue CMOS Technology. : . [Details]
Year1999 PublicationSolid-State Device Research Conference, 1999. Proceeding of the 29th European
OSullivan, BJ and Hurley, PK and Mathewson, A and Beanland, R and Rodrigues, R and Kay, P (1999) The Effect of Oxide Patterned Layers on the Rapid Thermal Oxidation of Polycrystalline Silicon. : . [Details]
Year2013 PublicationDevice Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching. : . [Details]
Year2003 PublicationReliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
Jackson, JC and Healy, G and Kelleher, AM and Alderman, J and Donnelly, J and Hurley, PK and Morrison, AP and Mathewson, A (2003) Defect passivation and dark count in Geiger-mode avalanche photodiodes. : . [Details]
Year1999 PublicationPlasma Process-Induced Damage, 1999 4th International Symposium on
Hurley, PK and Rodrigues, R and Kay, P and Thakur, RPS and Clarke, D and Sheehan, E and Mathewson, A (1999) Plasma process induced degradation of thin inter-polysilicon dielectric layers. : . [Details]
Year2009 PublicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K (2009) Post-breakdown conduction in metal gate/MgO/InP structures. : . [Details]
Year2011 PublicationAVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA
Eric Vogel , A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace (2011) A Comprehensive Electrophysical Model for the Mobility of In0.53Ga0.47As Surface Channel MOSFETs. [Invited Oral Presentation]. : AVS 58th International Symposium and Exhibition, October 30 - November 4, 2011, Nashville Convention Center, Nashville, USA. [Details]
Year2003 PublicationProceeding. ESSDERC 95, The Hague
Sheehan, E.; Mathewson, A.; Kalnitsky, A.; Hurley, P. K.; Lepert, A.; Mallardeau, C (2003) *. [N/A]. : Proceeding. ESSDERC 95, The Hague. [Details]
Year2003 PublicationProceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September)
Hurley, P. K.; Moran, S.; Wall, L.; Mathewson, A.; Mason, B (2003) *. [N/A]. : Proceedings of 24th European Solid State Research Conference (ESSDERC '94), Edinburgh (September). [Details]
Year2003 PublicationProceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA
Hurley, P. K.; Kalnitsky, A.; Lepert, A.; Moran, S.; Mathewson, A (2003) *. [N/A]. : Proceedings Semiconductor Interface Specialists Conference. SISC, Charleston, SC, USA. [Details]
Year2003 PublicationProceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble
Hurley, P. K.; Wall, L.; Mathewson, A (2003) *. [N/A]. : Proceedings of the European Solid State Device Research Conference (ESSDERC-93), Grenoble. [Details]

Honours and Awards

  • Cork Convention Bureau: Cork Conference Ambassador Award (2014)
  • INTEL: Intel Outstanding Researcher Award (2012)
  • Liverpool University: IEE Departmental Prize (1985). (1985)
  • Liverpool University: William Henry McMenemey Engineering Faculty Prize (1985). (1985)
  • ECS: Best Presentation Award 216th ECS Meeting (2009)

Professional Associations

  • Member, IEEE (03-OCT-13 /)

Patents

  • P10945EP

Committees

  • Member of the INFOS Scientific Committee, Insulating Films on Semiconductors (INFOS) (2004 / 2014)
  • Scientific Committee, European Mamterials Research Society (2014 / 2015)
  • Scientific Committee, Workshop on Dielectrics in Microelectronics (WODIM) (2002 / 2014)
  • Scientific Committee and Discussion Group Leader, IEEE International Integrated Reliability Workshop (IIRW) (2013 / 2014)

Employment

  • Research Associate, Liverpool University (01-SEP-89 / 01-MAY-92)
  • Research Scientist, University College Cork (04-AUG-92 / 04-AUG-94)
  • Senior Research Scientist, University College Cork (04-AUG-94 / 22-NOV-12)
  • Senior Research Scientist and Head of Group, University College Cork (22-NOV-12 /)

Education

  • University of Liverpool , PhD, Semiconductor Materials and Devices (1990)
  • Unversity of Liverpool , B.Eng., Electronic Engineering (1985)

Journal Activities

  • Referee, J Vac Sci Technol (-)
  • Referee, J. Electrochem. Soc. (-)
  • Referee, Applied Physics Letters (-)
  • Referee, Microelectronic Engineering (-)
  • Referee, Semiconductor Science And Technology (-)
  • Referee, Ieee Electron Device Letters (-)
  • Guest Editor, Microelectronics Reliability (-)
  • Referee, Ieee Transactions On Electron Devices (-)
  • Referee, J Appl Phys (-)

Teaching Interests

  • Semiconductor materials and devices for information and communication technologies
  • Specialist guest lectures covering recent technology challenges and developments for state of the art transistors

Recent Postgraduates

  • Vladimir Djara (UCC PHD) "Development of Inversion-Mode and Junctiolness InGaAs MOSFETs" (2013)
  • Rathnait Long (UCC PHD) "A Study of the Electronic and Structural Properties of the High-?/In0.53Ga0.47As System" (2010)
  • Adi Negara (UCC PHD) "A STUDY OF ELECTRON MOBILITY IN HFO2/TIN GATE MOSFETS" (2009)
  • Eamon O'Connor (UCC PHD) "Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors" (2014)

Internal Collaborators

  • Prof Jim Greer , Tyndall (IRELAND )
  • Prof Martyn Pemble , Tyndall (IRELAND )
  • Dr Ian Povey , Tyndall (IRELAND )

External Collaborators

  • Prof Paul C McIntyre , Stanford University (U.S.A. )
  • Prof Robert Wallace , University of Texas at Dallas (U.S.A. )
  • Dr Kelin Kuhn Intel Fellow , INTEL Corporation (U.S.A. )
  • Dr Jean Fompeyrine , IBM Zurich (SWITZERLAND )
  • Prof Enrique Miranda , Universitat Autonoma de Barcelona (SPAIN )
  • Prof John Boland , Trinity College Dublin (IRELAND )
  • Prof Max Lemme , University of Siegen (GERMANY )
  • Dr. Richard Haight , IBM Yorktown (U.S.A. )
  • Prof Georg Duesberg , Trinity College Dublin (IRELAND )
  • Prof Gerard Ghibaudo , IMEP Grenoble (FRANCE )
  • Prof Valery Afanasev , Catholic University of Leuven (BELGIUM )
  • Prof Iain Thayne , Glasgow University (SCOTLAND )
  • Prof Steve Hall , Liverpool Univeristy (UNITED KINGDOM )
  • Prof Olof Engstrom , Chalmers University (SWEDEN )
  • Prof Masimmo Fischetti , University of Texas at Dallas (U.S.A. )
  • Dr Robert Barklie , Trinity College Dublin (IRELAND )
  • Prog Greg Hughes , Dublin City University (IRELAND )
  • Dr David McNeill , Queens University Belfast (UNITED KINGDOM )
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