Our research group aims to understand and predict how devices work, by research based on modelling materials at the atomic scale. We supply fundamental insights into how materials perform in various technologies, ranging from electronics to solar power, and so work closely with experimental groups in academia and industry. There is particular focus on modelling atomic layer deposition (ALD) and heterogeneous catalysis at surfaces.
|Atomic layer deposition (ALD) of alumina, hafnia/zirconia||Thin film dielectrics for transistors, capacitors and memory||ELECTRONICS|
|Oxide-oxide heterojunctions on titania||Photocatalysis for renewable energy||ENERGY|
|Chemistries for depositing copper metal and surfaces during growth||3D nanoelectronic interconnects||ELECTRONICS|
|Surfaces of ceria||Heterogeneous catalysis||ENERGY|
|Native oxides of III-V semiconductors||Interfaces in CMOS transistors||ELECTRONICS|
|Multi-scale modelling of oxide growth||Thin film dielectrics for transistors, capacitors and memory||MATERIALS|
|ALD of silicon nitride, silicon carbide and silicon oxide||Etch-resistant layers for fabricating electronic devices||ELECTRONICS|
|Solar cells and smart windows||ENERGY|
We have bilateral projects including industry funding with:
In addition, we are involved in multi-lateral projects and have published joint papers with other companies.
We have joint papers or bilateral projects with:
as well as multi-lateral projects with other research groups world-wide.
Contact enquiry (at) tyndall (dot) ie for all Business Development enquiries