The Epitaxy and Physics of Nanostructures laboratory investigates the epitaxial growth mechanism and the physics of a variety of semiconductor structures. In particular, we undertake fundamental studies of the growth mechanism and the optical properties of site controlled quantum dots (QDs) obtained by growing in pre-patterned GaAs substrates. Our field of interest spans as far as optoelectronic and electronic devices, with special attention to light emitting sources at telecom wavelengths.
The group is well equipped to tackle its mission.
Carrier gas: Nitrogen.
Group III precursors: TMGa, TEGa, TMAl, TMIn;
Group V precursors AsH3, PH3, TMSb, U-DMHy
Dopant sources: Si2H6, CBr4, DEZn
Characteristic features: an ARS low vibration,
low temperature (~7K) closed cycle cryostat
Two Jobin Yvon 1 metre spectrometers,
one nitrogen cooled CCD and one InGaAs array .
Photon correlation set-up (4 channels, 4 APDs)
Timeresolved measurements capability in the visible and near infrared.
Supercontinuum laser for pulsed excitation
Advanced Research Systems, Inc.
Veeco Multimode V
Panalytical X-pert MRD
|Plasma system type "FEMTO"