Post doctoral Researcher in the electro-optical characterisation and modelling of InGaP microLED structures. Supported by META.

Post doctoral Researcher in the electro-optical characterisation and modelling of InGaP microLED structures. Supported by META.

Contract: Full Time/Fixed Term

The Tyndall National Institute at University College Cork invite applications for a postdoctoral position focussed on the electro-optical characterisation InGaP metal-oxide-semiconductor (MOS) structures. The research position is supported by Meta- and is related to an increased understanding of non-radiative recombination centres in InGaP based microLED structures.

Background

The ability to form displays comprised of microscale light emitting diodes (LEDs), where the LED lateral dimensions are around 2um, is central to the realisation of Augmented Reality Head-Mounted Displays. Such head-mounted displays, which augment our surroundings, will open the door to a vast range of new applications in areas such as: surgery, manufacturing, training, entertainment and education.

The current research challenge in terms of the practical realisation of such displays, is the properties of the semiconductor/oxide interface at, or near, the periphery of the light emitting diodes. The semiconductor materials which are used for light emission are called compound semiconductors and are typically comprised of two or three elements from groups III and V of the periodic table (e.g., GaAs, InGaP, GaN, InGaN). As the lateral dimensions of the LEDs drop below around 10um, which is required for a high-resolution display, crystalline defects at the periphery of the device, or within the surrounding passivation oxide, can play an increasing role, and act as non-radiative recombination centres, reducing the internal quantum efficiency. The problem is particularly challenging in the case of the red microLED, typically formed using the compound semiconductor InGaP. The ability to characterise these non-radiative defects is the basis for the position.

The approximate 2-year postdoctoral research position will be focussed on the electrical characterisation and modelling of MOS structures formed on InGaP, AlInGaP and AlInP. The experimental measurements will be based primarily on impedance spectroscopy of the InGaP MOS system from 100Hz up to 1 GHz. A large element of the research will be the use of a physics-based modelling platform (Ginestra), to analyse the experimental data to determine the spatial and energetic distribution of non-radiative recombination centres near the III-V/oxide interface. The experimental results and analysis will be used to guide process development aimed at increasing the internal quantum efficiency of red InGaP based microLEDs.

The successful candidate will have completed PhD in an electrical engineering or physics related discipline.

Responsibilities
 

• Interacting with Tyndall and Meta to form and characterise the relevant MOS structures.
• The candidate will need to take a management role in the electrical characterisation and modelling of the III-V MOS structures using impedance spectroscopy.
• Participate in Education and Public Engagement activities, as required.
• Ensure all activities are compliant with the Tyndall Quality Management system.
• Ensure all activities are compliant with the required Health and Safety standards.
• Carry out any additional duties as may reasonably be required within the general scope and level of the post.

Essential Criteria
 

• The candidate should have a PhD in Engineering or Physics.
• Experience in the device modelling (e.g., Silvaco, Synopsis, Ginestra Comsol..etc)

Desirable Criteria
 

• Experience in the fabrication of semiconductor devices (e.g., lithography, sputtering, etching, oxide deposition…)
• Experience of on-wafter electrical characterisation of semiconductor devices in a probe station.
• Excellent verbal and written communication skills
• Strong leadership skills
• Experience in the growth of III-V devices is also an asset.

Appointment may be made on the IUA Researcher Scale €45,847- €52,339 per annum. Salary placement on appointment will be in accordance with public sector pay policy.

For further information on this position, please contact Prof Paul Hurley
Closing date of applications is 20th June 2025
 

Application Instructions
Please make sure to attach an up-to-date CV/Resume AND a brief motivation letter outlining how you meet the ‘Essential Criteria’ for this role.

Please note that Garda vetting and/or an international police clearance check may form part of the selection process.

The University, at its discretion, may undertake to make an additional appointment(s) from this competition following the conclusion of the process.

Please note that an appointment to posts advertised will be dependent on University approval, together with the terms of the employment control framework for the higher education sector.

At this time, Tyndall National Institute does not require the assistance of recruitment agencies.
Tyndall National Institute at University College, Cork is an Equal Opportunities Employer.