2D materials have been proposed as the basis of future nano-electronic devices, applications, and products, ranging from transistors to sensors, as well as in broader fields such as energy, healthcare, and quantum.
Working closely with researchers from the University of Padova led by Enrico Napolitani and Enrico di Russo, as part of the ASCENT+ EU Infrastructures project, a multi-disciplinary team of Tyndall researchers has demonstrated a significant breakthrough in the field of 2D materials research, as a result of shared expertise and enthusiastic collaboration.
The paper, ‘Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing’ has been published in the prestigious Applied Electronic Materials Journal.
Tyndall’s Ray Duffy led part of the multi-disciplinary research team, who worked collaboratively to share infrastructure and thus were able to reduce barriers to complete the important work.
The drive to fabricate large-area semiconductor thin-film Transition Metal Dichalcogenides (TMDs) at low temperatures stems from opportunities in novel application areas for thin-film TMDs, and also from the need to solve bottle-neck thermal budget and integration issues of integrated circuit technology.
This work explores an unconventional growth method based on a two-step process consisting in sputter deposition of stochiometric MoS2 on Si/SiO2 substrates followed by nanosecond UV (248 nm) pulsed laser annealing. This method can speed up the integration of large-area 2D materials with Si-based devices, paving the way for many important applications.
Read the full publication here.