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Leader in Integrated ICT Hardware & Systems

Aleksandar Jaksic - Staff Researcher

Aleksandar Jaksic

Contact

+353 (0)21 2346262
aleksandar.jaksic (at) tyndall (dot) ie

  • MNS (Circuits and Systems)

Research Grants

  • Radiochemistry on Chip (European Union) €436,830.00 (19-JAN-08 / 16-SEP-11)
  • [IST-2001-35243] {A Jaksic} V (European Union) €429,604.00 (01-JUN-02 / 30-APR-05)
  • EU "Joint Research on Various Types of Radiation Dosimeters" (European Union) €84,530.00 (01-MAY-08 / 30-APR-12)
  • Development of radiation sensors based on stacked RADFET technology. (European Union) €133,361.00 (01-SEP-12 / 31-AUG-13)
  • HANDHOLD - HANDHeld OLfactory Detector (European Commission) €420,000.00 (01-APR-12 / 30-SEP-15)
  • Development of novel radiation detectors based on RADFET Technology. (Irish Research Council) €72,000.00 (01-OCT-13 / 30-SEP-16)
  • EI 'Development of Stacked RADFETs for Application in Personal Dosimetry' (Enterprise Irl) €99,000.00 (03-SEP-07 / 02-SEP-08)
  • European Space Agency ESTEC 4200023059 EuCDAD (Foreign Industry) €175,000.00 (01-AUG-10 / 31-DEC-16)

Books

YearPublication

Peer Reviewed Journals

YearPublication
2009 Investigation of the Energy Response of RADFET for High Energy Photons, Electrons, Protons, and Neutrons
Wind, M,Beck, P,Jaksic, A (2009) Investigation of the Energy Response of RADFET for High Energy Photons, Electrons, Protons, and Neutrons. : IEEE Transactions On Nuclear Science. [Details]
2006 RADFET response to proton irradiation under different biasing configurations
Jaksic, A,Kimoto, Y,Mohammadzadeh, A,Hajdas, W (2006) RADFET response to proton irradiation under different biasing configurations. : IEEE Transactions On Nuclear Science. [Details]
2002 Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs
Jaksic, A,Ristic, G,Pejovic, M,Mohammadzadeh, A,Sudre, C,Lane, W (2002) Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs. : IEEE Transactions On Nuclear Science. [Details]
2004 Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs
Haran, A,Jaksic, A,Refaeli, N,Eliyahu, A,David, D,Barak, J (2004) Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs. : IEEE Transactions On Nuclear Science. [Details]
2013 Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals
Arima, V,Pascali, G,Lade, O,Kretschmer, HR,Bernsdorf, I,Hammond, V,Watts, P,De Leonardis, F,Tarn, MD,Pamme, N,Cvetkovic, BZ,Dittrich, PS,Vasovic, N,Duane, R,Jaksic, A,Zacheo, A,Zizzari, A,Marra, L,Perrone, E,Salvadori, PA,Rinaldi, R (2013) Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals. : Lab On A Chip. [Details]
2011 The Technology Demonstration Module On-Board PROBA-II
Harboe-Sorensen, R,Poivey, C,Fleurinck, N,Puimege, K,Zadeh, A,Guerre, FX,Lochon, F,Kaddour, M,Li, L,Walter, D,Keating, A,Jaksic, A,Poizat, M (2011) The Technology Demonstration Module On-Board PROBA-II. : IEEE Transactions On Nuclear Science. [Details]
2009 Heavy-ion induced charge yield in MOSFETs
[10] A. Javanainen, J.R. Schwank, M.R. Shaneyfelt, R. Harboe-Sørensen, A. Virtanen, H. Kettunen, S.M. Dalton, P.E. Dodd, A.B. Jaksic (2009) Heavy-ion induced charge yield in MOSFETs. : IEEE Transactions On Nuclear Science. [Details]
2005 The role of fixed and switching traps in long-term fading of implanted and unimplanted gate oxide RADFETs
Haran, A,Jaksic, A (2005) The role of fixed and switching traps in long-term fading of implanted and unimplanted gate oxide RADFETs. : IEEE Transactions On Nuclear Science. [Details]
2004 Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters
Benson, C,Price, RA,Silvie, J,Jaksic, A,Joyce, MJ (2004) Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters. : Physics In Medicine and Biology. [Details]
2012 Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature
Pejovic, M.M., Pejovic, M.M., Jaksic, A.B (2012) Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature. : Sensors And Actuators A: Physicalsensors And Actuators A: Physical. [Details]
2004 Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters
Benson C, Price RA, Silvie J, Jaksic A, Joyce MJ (2004) Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters. : Physics in medicine and biology. [Details]
2012 The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs
Risti?, G.S., Vasovi?, N.D., Jakši?, A.B (2012) The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs. : Journal of Physics D: Applied Physics. [Details]
2013 Response of PMOS dosemeters on gamma-ray irradiation during its re-use
Pejovic, M.M., Pejovic, M.M., Jaksic, A.B (2013) Response of PMOS dosemeters on gamma-ray irradiation during its re-use. : Radiation Protection Dosimetry. [Details]
2010 Response calculations for silicon-based direct-reading dosimeters for use at the international space station (ISS)
Luszik-Bhadra, M,Beck, P,Berger, T,Jaksic, A,Latocha, M,Rollet, S,Vuotila, M,Zechner, A,Reitz, G (2010) Response calculations for silicon-based direct-reading dosimeters for use at the international space station (ISS). : Radiation Measurements. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication

Honours and Awards

  • IEEE Electron Devices Society: IEEE Third Millennium Medal (2000)
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