Funder | Start Date | End Date | Title | Role |
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National University of Ireland (NUI) | 01-MAR-18 | 29-FEB-20 | National University of Ireland Post-Doctoral Fellowship in the Sciences | |
Royal Irish Academy | 01-JUN-19 | 30-NOV-19 | Charlemont Grant | |
European Commission | 01-OCT-21 | 30-SEP-24 | Marie Skłodowska-Curie Global Fellowship | |
Irish Research Council | 01-OCT-10 | 30-SEP-13 | EMBARK Postgraduate Scholarship |
Year | Publication |
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2020 | Chapter 2: Mid-Infrared Light-Emitting Diodes A. Krier, E. Repiso, F. Al-Saymari, P. J. Carrington, A. R. J. Marshall, L. Qi, S. E. Krier, K. J. Lulla, M. Steer, C. MacGregor, C. A. Broderick, R. Arkani, E. P. O’Reilly, M. Sorel, S. I. Molina, and M. De La Mata (2020) Chapter 2: Mid-Infrared Light-Emitting Diodes. : Woodhead Publishing. |
2017 | Chapter 9: Dilute Nitride Alloys C. A. Broderick, M. Seifikar, J. M. Rorison, and E. P. O'Reilly (2017) Chapter 9: Dilute Nitride Alloys. : CRC Press. |
2017 | Chapter 10: Dilute Bismide Alloys C. A. Broderick, I. P. Marko, E. P. O'Reilly, and S. J. Sweeney (2017) Chapter 10: Dilute Bismide Alloys. : CRC Press. |
2013 | Chapter 3: Theory of the Electronic Structure of Dilute Bismide Alloys - Tight-Binding and k.p Models C. A. Broderick, M. Usman, and E. P. O'Reilly (2013) Chapter 3: Theory of the Electronic Structure of Dilute Bismide Alloys - Tight-Binding and k.p Models. : Springer. |
Year | Journal | Publication |
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2022 | Physical Review Applied | Impact of band anticrossing on band-to-band tunneling in highly mismatched semiconductor alloys S. Das, C. A. Broderick, and E. P. O’Reilly (2022) Impact of band anticrossing on band-to-band tunneling in highly mismatched semiconductor alloys. : . [Details] |
2022 | Physical Review Materials | Electronic and optical properties of SiGeSn alloys lattice-matched to Ge P. M. Pearce, C. A. Broderick, M. P. Nielsen, A. D. Johnson, and N. J. Ekins-Daukes (2022) Electronic and optical properties of SiGeSn alloys lattice-matched to Ge. : . [Details] |
2021 | Journal of Physics D: Applied Physics | Impact of stoichiometry and strain on GeSn alloys from first principles calculations C. O'Donnell, A. Sanchez-Soares, C. A. Broderick, and J. C. Greer (2021) Impact of stoichiometry and strain on GeSn alloys from first principles calculations. : . [Details] |
2021 | Applied Physics Letters | Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors O. Moutanabbir, S. Assali, X. Gong, E. P. O'Reilly, C. A. Broderick, B. Marzban, J. Witzens, W. Du, S.-Q. Yu, A. Chelnokov, D. Buca, and D. Nam (2021) Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. : . [Details] |
2020 | Chemistry of Materials | Progress on germanium-tin nanoscale alloys J. Doherty, S. Biswas, E. Galluccio, C. A. Broderick, A. Garcia-Gil, R. Duffy, E. P. O'Reilly, and J. D. Holmes (2020) Progress on germanium-tin nanoscale alloys. : . [Details] |
2020 | Physical Review Applied | Continuous-wave magneto-optical determination of the carrier lifetime in coherent GeSn/Ge heterostructures E. Vitiello, S. Rossi, C. A. Broderick, G. Gravina, A. Balocchi, X. Marie, E. P. O’Reilly, M. Myronov, and F. Pezzoli (2020) Continuous-wave magneto-optical determination of the carrier lifetime in coherent GeSn/Ge heterostructures. : . [Details] |
2020 | Optical and Quantum Electronics | Electronic properties of type-II GaAsSb/GaAs quantum rings for applications in intermediate band solar cells R. Arkani, C. A. Broderick, and E. P. O'Reilly (2020) Electronic properties of type-II GaAsSb/GaAs quantum rings for applications in intermediate band solar cells. : . [Details] |
2019 | Journal of Applied Physics | Electronic structure evolution in dilute carbide GeC alloys and implications for device applications C. A. Broderick, M. D. Dunne, D. S. P. Tanner, and E. P. O'Reilly (2019) Electronic structure evolution in dilute carbide GeC alloys and implications for device applications. : . [Details] |
2019 | Optical and Quantum Electronics | Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys E. J. O'Halloran, C. A. Broderick, D. S. P. Tanner, S. Schulz, and E. P. O'Reilly (2019) Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys. : . [Details] |
2019 | Journal of Physics D: Applied Physics | Optical properties of metamorphic type-I InAsSb/Al In As quantum wells grown on GaAs for the mid-infrared spectral range E. Repiso, C. A. Broderick, M. de la Mata, R. Arkani, Q. Lu, A. R. J. Marshall, S. I. Molina, E. P. O'Reilly, P. J. Carrington, and A. Krier (2019) Optical properties of metamorphic type-I InAsSb/Al In As quantum wells grown on GaAs for the mid-infrared spectral range. : . [Details] |
2019 | Scientific Reports | Giant bowing of the band gap and spin-orbit splitting energy in GaPBi dilute bismide alloys Z. L. Bushell, C. A. Broderick, L. Nattermann, R. Joseph, J. L. Keddie, J. M. Rorison, K. Volz, and S. J. Sweeney (2019) Giant bowing of the band gap and spin-orbit splitting energy in GaPBi dilute bismide alloys. : . [Details] |
2018 | Physical Review Applied | Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures M. Usman, C. A. Broderick, and E. P. O'Reilly (2018) Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures. : . [Details] |
2018 | Semiconductor Science and Technology | Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates C. A. Broderick,W. Xiong, S. J. Sweeney, E. P. O'Reilly, and J. M. Rorison (2018) Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates. : . [Details] |
2017 | Scientific Reports | GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics C. A. Broderick, S. R. Jin, I. P. Marko, K. Hild, P. Ludewig, Z. L. Bushell, W. Stolz, J. M. Rorison, E. P. O’Reilly, K. Volz, Stephen J Sweeney (2017) GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics. : . [Details] |
2017 | IET Optoelectronics | Highly-mismatched III-V semiconductor alloys applied in multiple quantum well photovoltaics W. Xiong, C. A. Broderick, and J. M. Rorison (2017) Highly-mismatched III-V semiconductor alloys applied in multiple quantum well photovoltaics. : . |
2016 | IEEE Journal of Quantum Electronics | Theory and optimization of 1.3-μm metamorphic quantum well lasers S. Bogusevschi, C. A. Broderick, and E. P. O'Reilly (2016) Theory and optimization of 1.3-μm metamorphic quantum well lasers. : . [Details] |
2016 | Scientific Reports | Optical gain in GaAsBi/GaAs quantum well diode lasers I. P. Marko, C. A. Broderick, S. R. Jin, P. Ludewig, W. Stolz, K. Volz, J. M. Rorison, E. P. O’Reilly, and S. J. Sweeney (2016) Optical gain in GaAsBi/GaAs quantum well diode lasers. : . [Details] |
2015 | IEEE Journal of Selected Topics In Quantum Electronics | Theory of the electronic and optical properties of dilute bismide quantum well lasers C. A. Broderick, P. E. Harnedy, and E. P. O'Reilly (2015) Theory of the electronic and optical properties of dilute bismide quantum well lasers. : . [Details] |
2015 | Semiconductor Science and Technology | Determination of type-I band offsets in GaBixAs1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations C. A. Broderick, P. Harnedy, P. Ludewig, Z. L. Bushell, K. Volz, R. J. Manning, and E. P. O'Reilly (2015) Determination of type-I band offsets in GaBixAs1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations. : . [Details] |
2015 | Semiconductor Science and Technology | Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso > Eg G. M. T. Chai, C. A. Broderick, E. P. O'Reilly, Z. Othaman, S. R. Jin, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, J. M. O. Zide, S. J. Sweeney, and T. J. C. Hosea (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso > Eg. : . [Details] |
2014 | Physical Review B | Anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers C. A. Broderick, S. Mazzucato, H. Carrère, T. Amand, H. Makhloufi, A. Arnoult, C. Fontaine, O. Donmez, A. Erol, M. Usman, E. P. O'Reilly, and X. Marie (2014) Anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers. : . [Details] |
2014 | Journal of Luminescence | Luminescence properties of dilute bismide systems B. Breddermann, A. Bäumner, S. W. Koch, P. Ludewig, W. Stolz, K. Volz, J. Hader, J. V. Moloney, C. A. Broderick, and E. P. O'Reilly (2014) Luminescence properties of dilute bismide systems. : . [Details] |
2013 | Physica Status Solidi B-Basic Solid State Physics | 12‐band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations C. A. Broderick, M. Usman, and E. P. O'Reilly (2013) 12‐band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations. : . [Details] |
2013 | Physical Review B | Impact of alloy disorder on the band structure of compressively strained GaBiAs M. Usman, C. A. Broderick, Z. Batool, K. Hild, T. J. C. Hosea, S. J. Sweeney, and E. P. O’Reilly (2013) Impact of alloy disorder on the band structure of compressively strained GaBiAs. : . [Details] |
2013 | Semiconductor Science and Technology | Derivation of 12- and 14-band k·p Hamiltonians for dilute bismide and bismide-nitride semiconductors C. A. Broderick, M. Usman, and E. P. O'Reilly (2013) Derivation of 12- and 14-band k·p Hamiltonians for dilute bismide and bismide-nitride semiconductors. : . [Details] |
2012 | Semiconductor Science and Technology | Band engineering in dilute nitride and bismide semiconductor lasers M. Usman, C. A. Broderick, A. Lindsay, and E. P. O'Reilly (2012) Band engineering in dilute nitride and bismide semiconductor lasers. : . [Details] |
2011 | Physical Review B | Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs M. Usman, C. A. Broderick, A. Lindsay, and E. P. O'Reilly (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. : . [Details] |
Year | Publication |
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2021 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. Murphy, E. P. O'Reilly, and C. A. Broderick (2021) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2021 | IEEE International Semiconductor Laser Conference (IEEE-ISLC) Z. C. M. Davidson, T. Hepp, J. M. Rorison, S. J. Sweeney, K. Volz, and C. A. Broderick (2021) IEEE International Semiconductor Laser Conference (IEEE-ISLC). : . [Details] |
2021 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Z. C. M. Davidson, J. M. Rorison, S. J. Sweeney, and C. A. Broderick (2021) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2020 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick (2020) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2020 | IEEE Photonics Society Summer Topicals Meeting Series (IEEE-SUM) C. A. Broderick, E. J. O'Halloran, M. D. Dunne, A. C. Kirwan, A. D. Andreev, S. Schulz, and E. P. O'Reilly (2020) IEEE Photonics Society Summer Topicals Meeting Series (IEEE-SUM). : . [Details] |
2020 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) M. D. Dunne, C. A. Broderick, M. Luisier, and E. P. O'Reilly (2020) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2019 | International Conference on Numerical Simulation of Optoelectronic Devices C. A. Broderick, S. Das, and E. P. O'Reilly (2019) International Conference on Numerical Simulation of Optoelectronic Devices. : . [Details] |
2019 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) R. Arkani, C. A. Broderick, and E. P. O'Reilly (2019) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2019 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick, E. J. O'Halloran, and E. P. O'Reilly (2019) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2019 | IEEE International Conference on Group-IV Photonics (IEEE-GFP) C. A. Broderick, E. J. O'Halloran, A. C. Kirwan, M. D. Dunne, D. S. P. Tanner, S. Schulz, and E. P. O'Reilly (2019) IEEE International Conference on Group-IV Photonics (IEEE-GFP). : . [Details] |
2018 | IEEE International Conference on Nanotechnology (IEEE-NANO) A. C. Kirwan, E. J. O'Halloran, C. A. Broderick, S. Schulz, and E. P. O'Reilly (2018) IEEE International Conference on Nanotechnology (IEEE-NANO). : . [Details] |
2018 | International Conference on Numerical Simulations of Optoelectronic Devices (NUSOD) S. Schulz, C. A. Broderick, E. J. O'Halloran, and E. P. O'Reilly (2018) International Conference on Numerical Simulations of Optoelectronic Devices (NUSOD). : . [Details] |
2018 | IEEE International Conference on Nanotechnology (IEEE-NANO) C. A. Broderick, M. D. Dunne, D. S. P. Tanner, A. C. Kirwanv, E. J. O'Halloranl, S. Schulz, and E. P. O'Reilly (2018) IEEE International Conference on Nanotechnology (IEEE-NANO). : . [Details] |
2018 | IEEE International Conference on Nanotechnology (IEEE-NANO) R. Arkani, C. A. Broderick, and E. P. O'Reilly (2018) IEEE International Conference on Nanotechnology (IEEE-NANO). : . [Details] |
2018 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) R. Arkani, C. A. Broderick, and E. P. O'Reilly (2018) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2017 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick, W. Xiong, S. R. Jin, I. P. Marko, Z. L. Bushell, K. Hild, P. Ludewig, W. Stolz, K. Volz, J. M. Rorison, S. J. Sweeney, and E. P. O’Reilly (2017) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2016 | International Conference on Transparent Optical Networks (ICTON) J. M. Rorison, C. A. Broderick, W. Xiong, Q. Wang (2016) International Conference on Transparent Optical Networks (ICTON). : . [Details] |
2016 | International Conference on Transparent Optical Networks (ICTON) C. A. Broderick, W. Xiong, S. J. Sweeney, E. P. O'Reilly, and J. M. Rorison (2016) International Conference on Transparent Optical Networks (ICTON). : . [Details] |
2016 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick, S. Bogusevschi, and E. P. O'Reilly (2016) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2016 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick, J. M. Rorison, I. P. Marko, S. J. Sweeney, and E. P. O’Reilly (2016) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2016 | International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) C. A. Broderick, W. Xiong, and J. M. Rorison (2016) International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details] |
2014 | IEEE International Semiconductor Laser Conference (IEEE-ISLC) S. J. Sweeney, I. P. Marko, S. R. Jin, K. Hild, Z. Batool, P. Ludewig, L. Natterman, Z. L. Bushell, W. Stolz, K. Volz, C. A. Broderick, M. Usman, P. E. Harnedy, E. P. O'Reilly, R. Butkute, V. Pacebutas, A. Geiutis, and A. Krotkus (2014) IEEE International Semiconductor Laser Conference (IEEE-ISLC). : . [Details] |
2011 | International Conference on Transparent Optical Networks (ICTON) C. A. Broderick, M. Usman, A. Lindsay, and E. P. O'Reilly (2011) International Conference on Transparent Optical Networks (ICTON). : . [Details] |