Khusabu is as a postdoctoral researcher in the Nanoelectronic Materials and Devices Group at Tyndall. She’s involved in a collaborative Ireland–US project aimed at deepening the understanding of gallium oxide (Ga₂O₃) and its potential in power electronics and telecommunications. Her work centres around processing and characterising Ga₂O₃-based devices, particularly through investigating defect properties using impedance spectroscopy. A significant part of her role includes building 1D and 2D models using the Applied Materials Ginestra simulation platform to replicate device behaviours—such as I-V, C-V, and G-V characteristics—and align them with experimental results. She’s also exploring tunnelling mechanisms and modelling the spatial distribution of intrinsic defects like oxygen vacancies and polaron states. Additionally, she studies how annealing and ambient conditions influence defect evolution.
Click here to view Khusabu’s Google Scholar profile.
Contact Us
"*" indicates required fields