Ray Duffy
MicroNano Systems
Dr Ray Duffy is a Principal Researcher in Tyndall, and a Fellow in the School of Engineering and Architecture, University College Cork. Dr. Duffy’s research explores Emerging Materials and Devices for future nanoelectronic, Quantum, and ICT applications. He actively supervises and mentors post-doctoral researchers, research assistants, PhD candidates, and Masters students.
Previously he was a Senior Scientist at NXP Semiconductors Research, Leuven, Belgium. In this role Dr. Duffy investigated ideas, delivered results, and support for technology transfer to NXP Semiconductors and TSMC Taiwan. The technical missions were to integrate CMOS process modules, with expertise in doping and device architectures for Si FinFETs. Prior to that he was a Senior Scientist at Philips Research, Leuven, Belgium. Dr. Duffy’s role was to explore and support research ideas suitable for technology transfer to Philips Semiconductors Nijmegen, The Netherlands, and the Crolles2Alliance France. The technical missions were to integrate and design novel planar Si CMOS process modules.
Education: 1997 – 2000 : Ph. D., U.C.C., Cork, Ireland. Thesis title : “Scaling embedded non-volatile memories to deep submicron geometries.”. 1995 – 1996 : M. Eng. Sc., U.C.C., Cork, Ireland. Thesis title : “Numerical simulation of non-volatile memory technology.” 1991 – 1994 : B. E. (Electrical), U.C.C., Cork, Ireland.
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Biography
Dr. Ray Duffy is a Principal Researcher at Tyndall National Institute, and a Fellow in the School of Engineering, University College Cork. He has a h-index=24 (Scopus), ~160 research papers, ~20 invited presentations in international conferences across the EU, USA, and Asia.
In the past 5 years he has been Principal Investigator (PI), co-PI, or named Collaborator on Science Foundation Ireland, Enterprise Ireland, and EU H2020 projects, such as “Conformal and non-Destructive doping for gate-all-around nanowire devices” (E.I.-IP-2017-0605), “Investigating Emerging 2D Semiconductor Technologies” (SFI 15/IA/3131), “Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices” (SFI 14/IA/2513).
Dr. Duffy has been a major contributor to the EU Horizon2020 ASCENT project (grant agreement 654384) which offers access to research infrastructure and expertise in advanced Nanoelectronics. Based on the successful evaluation of the next phase, ASCENT+, he will be Tyndall’s leader and contact-point for contributions to the Joint Research Activities of the project in 2020-2023.
Specialties: International experience.
Customer oriented research.
Links to academia.
Dissemination of results in journals and conferences.
Mentoring of students.
Researchgate profile : https://www.researchgate.net/profile/Ray_Duffy2
ORCID profile : http://orcid.org/0000-0002-6362-3489
LinkedIn profile : https://ie.linkedin.com/in/rayduffy
Dr. Duffy’s activities involve Emerging Materials and Devices for future nanoelectronic, ICT, sensing, and quantum applications, including fabrication, characterisation and modelling of nanowire and thin-film devices.
He has been a Symposium Organiser or Technical Program Committee for several international conference spanning areas of modelling, process technology, and novel electron devices.
Dr. Duffy has been Symposium Organiser for European Material Research Society (E-MRS) Spring 2019 Symposium “Advances in silicon-nanoelectronics,-nanostructures and high-efficiency Si-photovoltaics”, E-MRS Fall 2017 Symposium “Integration, metrology and Technology CAD co-development for sub-10nm technology nodes”, E-MRS Spring 2015 Symposium “Nanomaterials and Processes for Advanced Semiconductor CMOS Devices”, and E-MRS Spring 2005 Symposium “Material science and devices issues for future generation Si-based technologies”.
He was on the Technical Program Committee for the Ion Implantation Technology conference 2012, 2014, 2016, 2018, 2020 (process technology); SISPAD 2018 (modelling), and IEEENANO 2018 (novel electron devices).
Dr. Duffy has been a regular peer reviewer of international journals for nearly 20 years in the fields of engineering, chemistry, and physics. Journal titles include IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Chemistry of Materials, Journal of Applied Physics, Applied Physics Letters, ACS Omega, Journal of Physical Chemistry, Vacuum, Journal of Materials Chemistry C, Beilstein Journal of Nanotechnology, Applied Surface Science, Semiconductor Science And Technology, Physica Status Solidi A, Materials Science In Semiconductor Processing, Nanoscale, Langmuir, ACS Applied Materials & Interfaces, and Advanced Quantum Technologies.
In this role he has had collaborative research projects or technical engagements with international industrial multi
Research Interests
Research Grants
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| Enterprise Irl | 01-JUN-11 | 01-MAY-18 | Travel Support | Principal Investigator |
| Science Foundation of Ireland | 01-OCT-09 | 31-DEC-15 | Starting Investigator Research Grant | Principal Investigator |
| Enterprise Irl | 18-JAN-13 | 17-SEP-13 | Proposal Preparation | Principal Investigator |
| Enterprise Irl | 18-NOV-14 | 17-AUG-15 | EI – CS-2014-1142- Process and Physical Modelling for CMOS Innovation Ray Duffy [X] | Principal Investigator |
| Enterprise Irl | 01-NOV-15 | 30-OCT-17 | Conformal and non-destructive doping of high mobility materials | Principal Investigator |
| Industry | 01-NOV-15 | 30-OCT-17 | Conformal and non-destructive doping of high mobility materials – Industry Portion -App. Materials | Principal Investigator |
| Irish Research Council | 02-JAN-16 | 31-JAN-20 | Two Dimensional Semiconductor Materials For Future Materials | Principal Investigator |
| Enterprise Irl | 01-NOV-17 | 29-FEB-20 | Conformal and non destructive doping towards gate all around nanowire devices | Principal Investigator |
| Industry/EI Projects | 01-NOV-17 | 28-FEB-20 | Conformal and non destructive doping towards gate all around nanowire devices | Principal Investigator |
| Enterprise Irl | 01-APR-19 | 31-AUG-21 | Passivation and characterisation of germanium nanostructures and devices | Principal Investigator |
| Industry/EI Projects | 01-APR-19 | 31-AUG-22 | Passivation and characterisation of germanium nanostructures and devices | Principal Investigator |
| Miscellaneous | 01-NOV-20 | 30-SEP-22 | Tyndall Internal Catalyst Award_ICA_2021_R Duffy_N Petkov | Principal Investigator |
| HEACOVID19 | 01-APR-21 | 31-JUL-21 | Extensions_2-Tyndall allocation-IP-2018-0757B-Ray Duffy | Principal Investigator |
Publications
Peer Reviewed Journals
| Year | Journal | Publication |
|---|---|---|
| 2021 | Acs Applied Materials & Interfaces | Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O'Connor, GM (2021) Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer. : AMER CHEMICAL SOC. |
| 2021 | Solid-State Electronics | Investigating interface states and oxide traps in the MoS2/oxide/Si system Coleman, E;Mirabelli, G;Bolshakov, P;Zhao, P;Caruso, E;Gity, F;Monaghan, S;Cherkaoui, K;Balestra, V;Wallace, RM;Young, CD;Duffy, R;Hurley, PK (2021) Investigating interface states and oxide traps in the MoS2/oxide/Si system. : PERGAMON-ELSEVIER SCIENCE LTD. |
| 2021 | Acs Applied Nano Materials | Stretching the Equilibrium Limit of Sn in Ge Biswas, S.; Doherty, J.; Galluccio, E.; Manning, H.; Conroy, M.; Duffy, R.; Bangert, U.; Boland, J.; Holmes, J. D. (2021) Stretching the Equilibrium Limit of Sn in Ge |
| 2021 | Solid-State Electronics | Performance and reliability in back-gated CVD-grown MoS2 devices Marquez, C;Salazar, N;Gity, F;Galdon, JC;Navarro, C;Duffy, R;Hurley, P;Gamiz, F (2021) Performance and reliability in back-gated CVD-grown MoS2 devices. : PERGAMON-ELSEVIER SCIENCE LTD. |
| 2020 | Materials Science In Semiconductor Processing | Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09 Galluccio, Emmanuele; Mirabelli; Gioele; Harvey, Alan; Conroy, Michele; Napolitani, Enrico; Duffy, Ray (2020) Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09. : . |
| 2020 | Langmuir : the ACS journal of surfaces and colloids | Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation Kennedy N.;Garvey S.;Maccioni B.;Eaton L.;Nolan M.;Duffy R.;Meaney F.;Kennedy M.;Holmes J.D.;Long B. (2020) Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. : . |
| 2020 | Chemistry of Materials | Progress on germanium-tin nanoscale alloys Doherty, J.; Biswas, S.; Gallucio, E.; Broderick, C. A.; Garcia-Gil, A.; Duffy, R.; O’Reilly, E. P.; Holmes, J. D. (2020) Progress on germanium-tin nanoscale alloys. : . |
| 2020 | Acs Applied Electronic Materials | Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices Galluccio, E.; Doherty, J.; Biswas, S.; Holmes, J. D.; Duffy, R. (2020) Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices. : . |
| 2020 | Langmuir : the ACS journal of surfaces and colloids | Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation Kennedy, N.; Garvey, S.; Maccioni, B.; Eaton, L.; Nolan, M.; Duffy, R.; Meaney, F.; Kennedy, M.; Holmes, J. D.; Long, B. (2020) Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. : . |
| 2019 | Journal of Applied Physics | Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation Kennedy N.;Duffy R.;Mirabelli G.;Eaton L.;Petkov N.;Holmes J.;Hatem C.;Walsh L.;Long B. (2019) Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation. : . |
| 2019 | Journal of Applied Physics | Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm. : . |
| 2019 | Thin Solid Films | Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08 Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-Y.; Lu, F.-L.; Liu, C. W.; Holmes, J. D.; Duffy, R. (2019) Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08. : . |
| 2019 | ACS Omega | Effects of Annealing Temperature and Ambient on Metal/PtSe Mirabelli G.;Walsh L.;Gity F.;Bhattacharjee S.;Cullen C.;Ó Coileáin C.;Monaghan S.;McEvoy N.;Nagle R.;Hurley P.;Duffy R. (2019) Effects of Annealing Temperature and Ambient on Metal/PtSe |
| 2019 | Npj 2d Materials And Applications | Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C Ansari, L;Monaghan, S;McEvoy, N;Coileain, CO;Cullen, CP;Lin, J;Siris, R;Stimpel-Lindner, T;Burke, KF;Mirabelli, G;Duffy, R;Caruso, E;Nagle, RE;Duesberg, GS;Hurley, PK;Gity, F (2019) Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C. : SPRINGERNATURE. |
| 2019 | Npj 2d Materials And Applications | Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe |
| 2019 | ACS Omega | Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation Mirabelli, G;Walsh, LA;Gity, F;Bhattacharjee, S;Cullen, CP;Coileain, CO;Monaghan, S;McEyoy, N;Nagle, R;Hurley, PK;Duffy, R (2019) Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation. : AMER CHEMICAL SOC. |
| 2018 | Journal of Applied Physics | Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O’Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . |
| 2018 | Journal of Applied Physics | Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O’Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . |
| 2018 | Journal of Applied Physics | AsH3 gas-phase ex situ doping 3D silicon structures Duffy, R.; Thomas, K.; Galluccio, E.; Mirabelli, G. Sultan, M.; Kennedy, N. Petkov, N. Maxwell, G.; Hydes, A.; O’Connell, D.; Lyons, C.; Sheehan, B.; Schmidt, M. Holmes, J. D.; Hurley, P. K.; Pelucchi, E. Connolly, J.; Hatem, C.; Long, B. (2018) AsH3 gas-phase ex situ doping 3D silicon structures. : . |
| 2018 | Journal of Applied Physics | AsH3 gas-phase ex situ doping 3D silicon structures Duffy, R.;Thomas, K.;Galluccio, E.;Mirabelli, G.;Sultan, M.;Kennedy, N.;Petkov, N.;Maxwell, G.;Hydes, A.;O’Connell, D.;Lyons, C.;Sheehan, B.;Schmidt, M.;Holmes, J. D.;Hurley, P. K.;Pelucchi, E.;Connolly, J.;Hatem, C.;Long, B.; (2018) AsH3 gas-phase ex situ doping 3D silicon structures. : . |
| 2018 | Beilstein Journal of Nanotechnology | Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B. (2018) Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates. : . |
| 2018 | Apl Materials | Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium Boninelli, S;Milazzo, R;Carles, R;Houdellier, F;Duffy, R;Huet, K;La Magna, A;Napolitani, E;Cristiano, F (2018) Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium. : AMER INST PHYSICS. |
| 2018 | Journal of Applied Physics | Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation Duffy, R. and Ricchio, A. and Murphy, R. and Maxwell, G. and Murphy, R. and Piaszenski, G. and Petkov, N. and Hydes, A. and O’Connell, D. and Lyons, C. and Kennedy, N. and Sheehan, B. and Schmidt, M. and Crupi, F. and Holmes, J.D. and Hurley, P.K. and Connolly, J. and Hatem, C. and Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . |
| 2018 | Journal of Applied Physics | AsH Duffy, R. and Thomas, K. and Galluccio, E. and Mirabelli, G. and Sultan, M. and Kennedy, N. and Petkov, N. and Maxwell, G. and Hydes, A. and O’Connell, D. and Lyons, C. and Sheehan, B. and Schmidt, M. and Holmes, J.D. and Hurley, P.K. and Pelucchi, E. and Connolly, J. and Hatem, C. and Long, B. (2018) AsH |
| 2017 | Materials Science In Semiconductor Processing | Doping top-down e-beam fabricated germanium nanowires using molecular monolayers Long, B.; Alessio Verni, G.; O’Connell, J.; Shayesteh, M.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; O’Connell, D.; Kuhn, K. J.; Clendenning, S. B.; Nagle, R.; Duffy, R.; Holmes, J. D. (2017) Doping top-down e-beam fabricated germanium nanowires using molecular monolayers. : . |
| 2017 | Materials Science In Semiconductor Processing | Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors Settino, F.; Crupi, F.; Biswas, S.; Holmes, J. D.; Duffy, R. (2017) Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors. : . |
| 2017 | ACS Omega | Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers O’Connell, J.; Napolitani, E.; Impellizzeri, G.; Glynn, C.; McGlacken, G. P.; O’Dwyer, C.; Duffy, R.; Holmes, J. D. (2017) Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers. : . |
| 2017 | ACS Omega | Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers. O’Connell, J., Napolitani, E., Impellizzeri, G., Glynn, C., McGlacken, G., O’Dwyer, C., Duffy, R. & Holmes, J. D. (2017) Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers.. : . |
| 2017 | Journal Of Vacuum Science & Technology B, Nanotechnology And Microelectronics: Materials, Processing, Measurement, And Phenomena | Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment Alexei N. Nazarov,Volodymyr O. Yukhymchuk,Yurii V. Gomeniuk,Sergiy B. Kryvyi,Pavel N. Okholin,Petro M. Lytvyn,Vasyl P. Kladko,Volodymyr S. Lysenko,Volodymyr I. Glotov,Illya E. Golentus,Enrico Napolitani,Ray Duffy (2017) Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment. : . |
| 2016 | Materials Science In Semiconductor Processing | Defect evolution and dopant activation in laser annealed Si and Ge Cristiano, F;Shayesteh, M;Duffy, R;Huet, K;Mazzamuto, F;Qiu, Y;Quillec, M;Henrichsen, HH;Nielsen, PF;Petersen, DH;La Magna, A;Caruso, G;Boninelli, S (2016) Defect evolution and dopant activation in laser annealed Si and Ge. : ELSEVIER SCI LTD. |
| 2016 | Acs Applied Materials & Interfaces | Monolayer Doping of Si with Improved Oxidation Resistance O’Connell, J;Collins, G;McGlacken, GP;Duffy, R;Holmes, JD (2016) Monolayer Doping of Si with Improved Oxidation Resistance. : AMER CHEMICAL SOC. |
| 2016 | Journal of Applied Physics | Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 Mirabelli, G;McGeough, C;Schmidt, M;McCarthy, EK;Monaghan, S;Povey, IM;McCarthy, M;Gity, F;Nagle, R;Hughes, G;Cafolla, A;Hurley, PK;Duffy, R (2016) Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2. : AMER INST PHYSICS. |
| 2016 | Nanotechnology | Chemical Approaches for Doping Nanodevice Architectures O’Connell, J.; Biswas, S.; Duffy, R.; Holmes, J. D. (2016) Chemical Approaches for Doping Nanodevice Architectures. : . |
| 2016 | ACS applied materials & interfaces | Monolayer doping of Si with improved oxidation resistance O’Connell, J.; Collins, G.; McGlacken, G. P.; Duffy, R.; Holmes, J. D. (2016) Monolayer doping of Si with improved oxidation resistance. : . |
| 2016 | ECS Journal of Solid State Science and Technology | Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium Filippone, B;Donaldson, C;Shayesteh, M;O’Connell, D;Huet, K;Toque-Tresonne, I;Crupi, F;Duffy, R (2016) Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium. : ELECTROCHEMICAL SOC INC. |
| 2016 | ECS Journal of Solid State Science and Technology | Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal Duffy, Ray; Foley, Patrick; Filippone, Bruno; Mirabelli, Gioele; O’Connell, Dan; Sheehan, Brendan; Carolan, Pat; Schmidt, Michael; Cherkaoui, Karim; Gatensby, Riley; Hallam, Toby; Duesberg, Georg; Crupi, Felice; Nagle, Roger; Hurley, Paul K. (2016) Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal. : . |
| 2016 | AIP Advances | Back-gated Nb-doped MoS2 junctionless field-effect-transistors Mirabelli, G,Schmidt, M,Sheehan, B,Cherkaoui, K,Monaghan, S,Povey, I,McCarthy, M,Bell, AP,Nagle, R,Crupi, F,Hurley, PK,Duffy, R (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : . |
| 2016 | AIP Advances | Back-gated Nb-doped MoS Mirabelli, G. and Schmidt, M. and Sheehan, B. and Cherkaoui, K. and Monaghan, S. and Povey, I. and McCarthy, M. and Bell, A.P. and Nagle, R. and Crupi, F. and Hurley, P.K. and Duffy, R. (2016) Back-gated Nb-doped MoS |
| 2016 | Materials Science In Semiconductor Processing | RF plasma treatment of shallow ion-implanted layers of germanium Okholin, R;Glotov, VI;Nazarov, AN;Yuchymchuk, VO;Kladko, VP;Kryvyi, SB;Lytvyn, PM;Tiagulskyi, SI;Lysenko, VS;Shayesteh, M;Duffy, R (2016) RF plasma treatment of shallow ion-implanted layers of germanium. : ELSEVIER SCI LTD. |
| 2015 | IEEE Transactions on Semiconductor Manufacturing | How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis Shayesteh, M;Duffy, R (2015) How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2015 | Acs Applied Materials & Interfaces | Organo-arsenic molecular layers on silicon for high density doping O’Connell, J.; Alessio Verni, G.; Gangnaik, A.; Shayesteh, M.; Long, B.; Georgiev, Y. M.; Petkov, N.; McGlacken, G. P.; Morris, M. A.; Duffy, R.; Holmes, J. D. (2015) Organo-arsenic molecular layers on silicon for high density doping. : . |
| 2014 | Physica Status Solidi C – Current Topics In Solid State Physics | Characterisation of electrically active defects Duffy R.;Heringa A. (2014) Characterisation of electrically active defects. : . |
| 2014 | IEEE Transactions On Electron Devices | Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Shayesteh, M,O’ Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : . |
| 2014 | Journal of Materials Chemistry C | Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion Duffy, R.; Shayesteh, M.; Thomas, K.; Pelucchi, E.; Yu, R.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; Petkov, N.; Long, B. Holmes, J. D. (2014) Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion. : . |
| 2014 | Journal of Materials Chemistry C | Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion Duffy, R.;Shayesteh, M.;Thomas, K.;Pelucchi, E.;Yu, R.;Gangnaik, A.;Georgiev, Y. M.;Carolan, P.;Petkov, N.;Long, B.;Holmes, J. D.; (2014) Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion. : . |
| 2014 | Physica Status Solidi-Rapid Research Letters | Junctionless nanowire Transistor fabricated with high mobility Ge channel Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R. (2014) Junctionless nanowire Transistor fabricated with high mobility Ge channel. : . |
| 2014 | Physica Status Solidi-Rapid Research Letters | Junctionless nanowire transistor fabricated with high mobility Ge channel Yu, R,Georgiev, YM,Das, S,Hobbs, RG,Povey, IM,Petkov, N,Shayesteh, M,O’Connell, D,Holmes, JD,Duffy, R (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : . |
| 2014 | Physica Status Solidi (C) Current Topics in Solid State Physics | Characterisation of electrically active defects Duffy, R., Heringa, A. (2014) Characterisation of electrically active defects. : . |
| 2014 | Semiconductor-On-Insulator Materials For Nanoelectronics Applications | Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications Georgiev, YM,Yu, R,Petkov, N,Lotty, O,Nightingale, AM,deMello, JC,Duffy, R,Holmes, JD,Nazarov, A,Balestra, F,Kilchytska V,Flandre, D (2014) Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications. : . |
| 2014 | Physica Status Solidi – Rapid Research Letters | Junctionless nanowire transistor fabricated with high mobility Ge channel Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O’Connell, D., Holmes, J.D., Duffy, R. (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : . |
| 2014 | Physica Status Solidi (C) Current Topics in Solid State Physics | Laser thermal anneal formation of atomically-flat low-resistive germanide contacts Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O’Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R. (2014) Laser thermal anneal formation of atomically-flat low-resistive germanide contacts. : . |
| 2014 | Physica Status Solidi C – Current Topics In Solid State Physics | Laser thermal anneal formation of atomically-flat low-resistive germanide contacts Huet K.;Shayesteh M.;Toqué-Tresonne I.;Negru R.;Daunt C.;Kelly N.;O’Connell D.;Yu R.;Djara V.;Carolan P.;Petkov N.;Duffy R. (2014) Laser thermal anneal formation of atomically-flat low-resistive germanide contacts. : . |
| 2013 | IEEE Transactions On Electron Devices | Atomically flat low-resistive germanide contacts formed by laser thermal anneal Shayesteh, Maryam; Huet, Karim; Toqué-Tresonne, Inès; Negru, Razvan; Daunt, Chris L. M.; Kelly, Niall; O’Connell, Dan; Yu, Ran; Djara, Vladimir; Carolan, Patrick B.; Petkov, Nikolay; Duffy, Ray (2013) Atomically flat low-resistive germanide contacts formed by laser thermal anneal. : . |
| 2013 | Solid-State Electronics | Impact ionization induced dynamic floating body effect in junctionless transistors Yu, R,Nazarov, AN,Lysenko, VS,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2013) Impact ionization induced dynamic floating body effect in junctionless transistors. : . |
| 2013 | Solid-State Electronics | Impact ionization induced dynamic floating body effect in junctionless transistors Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2013) Impact ionization induced dynamic floating body effect in junctionless transistors. : . |
| 2012 | Journal of Applied Physics | Molecular dynamics simulation of the regrowth of nanometric multigate Si devices Marques, LA,Pelaz, L,Santos, I,Lopez, P,Duffy, R (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : . |
| 2012 | Journal of Applied Physics | Molecular dynamics simulation of the regrowth of nanometric multigate Si devices Marques, LA;Pelaz, L;Santos, I;Lopez, P;Duffy, R (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : AMER INST PHYSICS. |
| 2012 | IEEE Transactions On Electron Devices | Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates Yu, R,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2012) Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates. : . |
| 2012 | IEEE Transactions On Electron Devices | Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates Yu, R;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2012) Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2012 | IEEE Transactions on Electron Devices | Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates Yu, R., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2012) Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates. : . |
| 2012 | Journal of Applied Physics | Molecular dynamics simulation of the regrowth of nanometric multigate Si devices Marqués, L.A., Pelaz, L., Santos, I., López, P., Duffy, R. (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : . |
| 2011 | IEEE Transactions On Electron Devices | NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices Shayesteh, M,Daunt, CLM,O’Connell, D,Djara, V,White, M,Long, B,Duffy, R (2011) NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices. : . |
| 2011 | Applied Physics Letters | Characterization of a junctionless diode Yu, R., Ferain, I., Akhavan, N.D., Razavi, P., Duffy, R., Colinge, J.-P. (2011) Characterization of a junctionless diode. : . |
| 2011 | Applied Physics Letters | The curious case of thin-body Ge crystallization Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L., Marqués, L.A. (2011) The curious case of thin-body Ge crystallization. : . |
| 2011 | IEEE Transactions on Electron Devices | NiGe contacts and junction architectures for P and As doped germanium devices Shayesteh, M., Daunt, C.L.L.M., O’Connell, D., Djara, V., White, M., Long, B., Duffy, R. (2011) NiGe contacts and junction architectures for P and As doped germanium devices. : . |
| 2011 | Applied Physics Letters | Characterization of a junctionless diode Yu, R;Ferain, I;Akhavan, ND;Razavi, P;Duffy, R;Colinge, JP (2011) Characterization of a junctionless diode. : AMER INST PHYSICS. |
| 2011 | Applied Physics Letters | The curious case of thin-body Ge crystallization Duffy, R,Shayesteh, M,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Kelleher, AM,Schmidt, M,Petkov, N,Pelaz, L,Marques, LA (2011) The curious case of thin-body Ge crystallization. : . |
| 2011 | Applied Physics Letters | Characterization of a junctionless diode Yu, R,Ferain, I,Akhavan, ND,Razavi, P,Duffy, R,Colinge, JP; (2011) Characterization of a junctionless diode. : . |
| 2011 | Applied Physics Letters | The curious case of thin-body Ge crystallization Duffy, R;Shayesteh, M;McCarthy, B;Blake, A;White, M;Scully, J;Yu, R;Kelleher, AM;Schmidt, M;Petkov, N;Pelaz, L;Marques, LA (2011) The curious case of thin-body Ge crystallization. : AMER INST PHYSICS. |
| 2011 | IEEE Transactions On Electron Devices | NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices Shayesteh, M;Daunt, CLM;O'Connell, D;Djara, V;White, M;Long, B;Duffy, R (2011) NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2010 | Solid-State Electronics | Quantitative prediction of junction leakage in bulk-technology CMOS devices Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R. (2010) Quantitative prediction of junction leakage in bulk-technology CMOS devices. : . |
| 2010 | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5)) Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Vandervorst, W. (2010) Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5)). : . |
| 2010 | Applied Physics Letters | The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization Duffy, R., Shayesteh, M., White, M., Kearney, J., Kelleher, A.-M. (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : . |
| 2010 | Applied Physics Letters | The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : AMER INST PHYSICS. |
| 2010 | Applied Physics Letters | The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization Duffy, R,Shayesteh, M,White, M,Kearney, J,Kelleher, AM; (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : . |
| 2009 | Solid-State Electronics | Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K. (2009) Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering. : . |
| 2008 | Solid State Phenomena | Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation Mitromara, N., Evans-Freeman, J.H., Duffy, R. (2008) Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation. : . |
| 2008 | Materials Science Forum | Doping strategies for FinFETs Pawlak, B.J., Duffy, R., De Keersgieter, A. (2008) Doping strategies for FinFETs. : . |
| 2008 | Materials Science Forum | Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals Cristiano, F., Bazizi, E.M., Fazzini, P.F., Boninelli, S., Duffy, R., Pakfar, A., Paul, S., Lerch, W. (2008) Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals. : . |
| 2008 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Duffy, R., Curatola, G., Pawlak, B.J., Doornbos, G., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Roozeboom, F. (2008) Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance. : . |
| 2008 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Evolution of fluorine and boron profiles during annealing in crystalline Si López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) Evolution of fluorine and boron profiles during annealing in crystalline Si. : . |
| 2008 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Probing doping conformality in fin shaped field effect transistor structures using resistors Vandervorst, W., Jurczak, M., Everaert, J.-L., Pawlak, B.J., Duffy, R., Del-Agua-Bomiquel, J.-I., Poon, T. (2008) Probing doping conformality in fin shaped field effect transistor structures using resistors. : . |
| 2008 | Journal of Applied Physics | Si interstitial contribution of F+ implants in crystalline Si López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) Si interstitial contribution of F+ implants in crystalline Si. : . |
| 2007 | Applied Physics Letters | Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors Duffy, R., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Degroote, B., Kunnen, E., Altamirano, E. (2007) Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors. : . |
| 2006 | Applied Physics Letters | Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals Duffy, R., Dao, T., Tamminga, Y., Van Der Tak, K., Roozeboom, F., Augendre, E. (2006) Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals. : . |
| 2006 | Applied Physics Letters | Suppression of phosphorus diffusion by carbon co-implantation Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B. (2006) Suppression of phosphorus diffusion by carbon co-implantation. : . |
| 2006 | Applied Physics Letters | Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth Aboy, M., Pelaz, L., López, P., Marqús, L.A., Duffy, R., Venezia, V.C. (2006) Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth. : . |
| 2006 | Applied Physics Letters | Diffusion, activation, and regrowth behavior of high dose P implants in Ge Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. (2006) Diffusion, activation, and regrowth behavior of high dose P implants in Ge. : . |
| 2006 | IEEE Transactions on Electron Devices | Boron pocket and channel deactivation in nMOS transistors with SPER junctions Duffy, R., Aboy, M., Venezia, V.C., Pelaz, L., Severi, S., Pawlak, B.J., Eyben, P., Janssens, T., Vandervorst, W., Loo, J., Roozeboom, F. (2006) Boron pocket and channel deactivation in nMOS transistors with SPER junctions. : . |
| 2005 | Applied Physics Letters | Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface Duffy, R., Venezia, V.C., Loo, J., Hopstaken, M.J.P., Verheijen, M.A., Van Berkum, J.G.M., Maas, G.C.J., Tamminga, Y., Dao, T., Demeurisse, C. (2005) Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface. : . |
| 2005 | Applied Physics Letters | Role of silicon interstitials in boron cluster dissolution Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R., Venezia, V.C., Griffin, P.B. (2005) Role of silicon interstitials in boron cluster dissolution. : . |
| 2005 | Journal of Applied Physics | Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R. (2005) Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon. : . |
| 2005 | Applied Physics Letters | Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Maex, K., Smith, A.J., Cowern, N.E.B., Dao, T., Tamminga, Y. (2005) Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth. : . |
| 2005 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Impurity redistribution due to recrystallization of preamorphized silicon Duffy, R., Venezia, V.C., Van Der Tak, K., Hopstaken, M.J.P., Maas, G.C.J., Roozeboom, F., Tamminga, Y., Dao, T. (2005) Impurity redistribution due to recrystallization of preamorphized silicon. : . |
| 2005 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies Pelaz, L., Duffy, R., Cristiano, F., Colombeau, B., Uppal, S. (2005) E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies. : . |
| 2005 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth Aboy, M., Pelaz, L., Barbolla, J., Duffy, R., Venezia, V.C. (2005) Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth. : . |
| 2005 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Boron diffusion in strained and strain-relaxed SiGe Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B., Griffin, P.B. (2005) Boron diffusion in strained and strain-relaxed SiGe. : . |
| 2005 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Boron diffusion in amorphous silicon Venezia, V.C., Duffy, R., Pelaz, L., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Graat, P. (2005) Boron diffusion in amorphous silicon. : . |
| 2004 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth Lindsay, R., Henson, K., Vandervorst, W., Maex, K., Pawlak, B.J., Duffy, R., Surdeanu, R., Stolk, P., Kittl, J.A., Giangrandi, S., Pages, X., Van der Jeugd, K. (2004) Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth. : . |
| 2004 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth Pawlak, B.J., Lindsay, R., Susdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C.J.J. (2004) Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth. : . |
| 2004 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Roozeboom, F., Wang, C.C., Diaz, C.H., Griffin, P.B. (2004) Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon. : . |
| 2004 | Applied Surface Science | Effects of crystalline regrowth on dopant profiles in preamorphized silicon Hopstaken, M.J.P., Tamminga, Y., Verheijen, M.A., Duffy, R., Venezia, V.C., Heringa, A. (2004) Effects of crystalline regrowth on dopant profiles in preamorphized silicon. : . |
| 2004 | Applied Physics Letters | Boron diffusion in amorphous silicon and the role of fluorine Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L. (2004) Boron diffusion in amorphous silicon and the role of fluorine. : . |
| 2004 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles Aboy, M., Pelaz, L., Marqués, L.A., Löpez, P., Barbolla, J., Venezia, V.C., Duffy, R., Griffin, P.B. (2004) The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles. : . |
| 2003 | Applied Physics Letters | Boron uphill diffusion during ultrashallow junction formation Duffy, R., Venezia, V.C., Heringa, A., Hüsken, T.W.T., Hopstaken, M.J.P., Cowern, N.E.B., Griffin, P.B., Wang, C.C. (2003) Boron uphill diffusion during ultrashallow junction formation. : . |
| 2003 | IEEE Transactions On Electron Devices | A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications Mc Carthy, D;Duane, R;O’Shea, M;Duffy, R;Mc Carthy, K;Kelliher, AM;Concannon, A;Mathewson, A (2003) A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. |
| 2003 | IEEE Transactions On Electron Devices | A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications Mc Carthy, D., Duane, R., O’Shea, M., Duffy, R., Mc Carthy, K., Kelliher, A.-M., Concannon, A., Mathewson, A. (2003) A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications. : . |
| 2003 | IEEE Transactions On Electron Devices | ¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿. 7. McCarthy, D., Duane, R., O¿Shea, M., Duffy, R., McCarthy, K.G., Kelleher, A.M., Concannon, A., Mathewson, A; (2003) ¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿.. : . |
| 2001 | Microelectronics Journal | Scaling embedded EEPROMs for the integration in deep submicron technologies Duffy, R., Concannon, A., Mathewson, A., Lane, B. (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : . |
| 2001 | Rna-A Publication of The Rna Society | Scaling embedded EEPROMs for the integration in deep submicron technologies Duffy, R,Concannon, A,Mathewson, A,Lane, B; (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : . |
| 2001 | Microelectronics Journal | Scaling embedded EEPROMs for the integration in deep submicron technologies Duffy, R;Concannon, A;Mathewson, A;Lane, B (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : ELSEVIER ADVANCED TECHNOLOGY. |
| 2001 | Microelectronics journal | Scaling embedded EEPROMs for the integration in deepsubmicron technologies Duffy, R and Concannon, A and Mathewson, A and Lane, B (2001) Scaling embedded EEPROMs for the integration in deepsubmicron technologies. : . |
| 1999 | Microelectronics Reliability | SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation. : . |
| 1999 | Microelectronics Reliability | Analysis of external latch-up protection test structure design using numerical simulation Palser, K;Concannon, A;Duffy, R;Mathewson, A (1999) Analysis of external latch-up protection test structure design using numerical simulation. : PERGAMON-ELSEVIER SCIENCE LTD. |
| 1999 | Microelectronics Reliability | Analysis of external latch-up protection test structure design using numerical simulation Palser, K., Concannon, A., Duffy, R., Mathewson, A. (1999) Analysis of external latch-up protection test structure design using numerical simulation. : . |
| 0 | Iee Colloquium (Digest) | Advanced Process Development Using Numerical Simulation [B2746] Duffy, R.; Concannon, A.; Mathewson, A.; (0) Advanced Process Development Using Numerical Simulation [B2746]. : . |
Book Chapters
| Year | Publication |
|---|---|
| 2021 | Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors Duffy, R., Napolitani, E., Cristiano F. (2021) Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors. : Elsevier. |
| 2018 | Surface functionalization strategies for monolayer doping Holmes J.;O’Connell J.;Duffy R.;Long B. (2018) Surface functionalization strategies for monolayer doping. : . |
| 2014 | Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications Georgiev, Y. M.; Yu, R.; Petkov, N.; Lotty, O.; Nightingale, A.; de Mello, J. C.; Duffy, R.; Holmes, J. D. (2014) Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications. : Springer International Publishing. |
Conference Publications
| Year | Publication |
|---|---|
| 2020 | ECS Transactions Duffy R.;Meaney F.;Galluccio E. (2020) ECS Transactions. : . |
| 2019 | 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) Galluccio, E;Petkov, N;Mirabelli, G;Doherty, J;Lin, SY;Lu, FL;Liu, CW;Holmes, JD;Duffy, R (2019) 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). : IEEE. |
| 2018 | IEEE 18th International Workshop on Junction Technology (IWJT) Duffy, R.; Kennedy, N.; Mirabelli, G.; Galluccio, E.; Hurley, P. K.; Holmes, J. D.; Long, B. (2018) IEEE 18th International Workshop on Junction Technology (IWJT). : . |
| 2018 | 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017. : . |
| 2018 | 2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) Duffy, R;Kennedy, N;Mirabelli, G;Galluccio, E;Hurley, PK;Holmes, JD;Long, B (2018) 2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT). : IEEE. |
| 2018 | 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) MacHale, J;Meaney, F;Sheehan, B;Duffy, R;Kennedy, N;Long, B (2018) 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018). : IEEE. |
| 2018 | Proceedings of the International Conference on Ion Implantation Technology Machale J.;Meaney F.;Sheehan B.;Duffy R.;Kennedy N.;Long B. (2018) Proceedings of the International Conference on Ion Implantation Technology. : . |
| 2017 | 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) Mirabelli, G;Gity, F;Monaghan, S;Hurley, PK;Duffy, R (2017) 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). : IEEE. |
| 2017 | European Solid-State Device Research Conference Mirabelli G.;Gity F.;Monaghan S.;Hurley P.;Duffy R. (2017) European Solid-State Device Research Conference. : . |
| 2017 | 2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) Ponath, P;Posadas, AB;Ren, Y;Wu, XY;Lai, KJ;Demkov, A;Schmidt, M;Duffy, R;Hurley, P;Wang, J;Young, C;Vasudevan, RK;Okatan, MB;Jesse, S;Kalinin, SV (2017) 2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). : IEEE. |
| 2017 | 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017) Monaghan, S;Gity, F;Duffy, R;Mirabelli, G;McCarthy, M;Cherkaoui, K;Povey, IM;Nagle, RE;Hurley, PK;Lindemuth, JR;Napolitani, E (2017) 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017). : IEEE. |
| 2017 | Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 – Proceedings Monaghan S.;Gity F.;Duffy R.;Mirabelli G.;McCarthy M.;Cherkaoui K.;Povey I.;Nagle R.;Hurley P.;Lindemuth J.;Napolitani E. (2017) Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 – Proceedings. : . |
| 2017 | 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) Gity, F;Ansari, L;Monaghan, S;Mirabelli, G;Torchia, P;Hydes, A;Schmidt, M;Sheehan, B;McEvoy, N;Hallam, T;Cherkaoui, K;Nagle, R;Duffy, R;Duesberg, GS;Hurley, PK (2017) 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC). : IEEE. |
| 2016 | Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016 Nazarov A.;Yukhymchuk V.;Okholin P.;Lytvyn P.;Lysenko V.;Glotov V.;Nazarova T.;Napolitani E.;Duffy R. (2016) Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016. : . |
| 2016 | 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray (2016) 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). : . |
| 2016 | SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 Duffy, R (2016) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6. : ELECTROCHEMICAL SOC INC. |
| 2016 | INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP) Nazarov, AN;Yukhymchuk, VO;Okholin, PN;Lytvyn, PM;Lysenko, VS;Glotov, VI;Nazarova, TM;Napolitani, E;Duffy, R (2016) INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP). : IEEE. |
| 2016 | 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). : IEEE. |
| 2014 | Proceedings of the International Conference on Ion Implantation Technology Shayesteh M.;O’Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Proceedings of the International Conference on Ion Implantation Technology. : . |
| 2014 | Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R, (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios. : . |
| 2014 | 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014) Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014). : IEEE. |
| 2014 | Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium Long, B,Verni, GA,O’Connell, J,Holmes, J,Shayesteh, M,O’Connell, D,Duffy, R, (2014) Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium. : . |
| 2014 | Ion Implantation Technology (IIT), 2014 20th International Conference Long, B.; Verni, G. A.; O’Connell, J.; Shayesteh, M.; O’Connell, D.; Duffy, R.; Holmes, J. D. (2014) Ion Implantation Technology (IIT), 2014 20th International Conference. : . |
| 2014 | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1 Duffy, R;Heringa, A (2014) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1. : WILEY-V C H VERLAG GMBH. |
| 2014 | PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1 Huet, K;Shayesteh, M;Toque-Tresonne, I;Negru, R;Daunt, CLM;Kelly, N;O'Connell, D;Yu, R;Djara, V;Carolan, P;Petkov, N;Duffy, R (2014) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1. : WILEY-V C H VERLAG GMBH. |
| 2014 | 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) Duffy, R;Shayesteh, M (2014) 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT). : IEEE. |
| 2014 | 2014 International Workshop on Junction Technology, IWJT 2014 Duffy R.;Shayesteh M. (2014) 2014 International Workshop on Junction Technology, IWJT 2014. : . |
| 2013 | Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013 Duffy R.;Shayesteh M.;Kazadojev I.;Yu R. (2013) Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. : . |
| 2013 | SOLID-STATE ELECTRONICS Yu, R;Nazarov, AN;Lysenko, VS;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2013) SOLID-STATE ELECTRONICS. : PERGAMON-ELSEVIER SCIENCE LTD. |
| 2012 | ION IMPLANTATION TECHNOLOGY 2012 Shayesteh, M;Djara, V;Schmidt, M;White, M;Kelleher, AM;Duffy, R (2012) ION IMPLANTATION TECHNOLOGY 2012. : AMER INST PHYSICS. |
| 2011 | European Solid-State Device Research Conference Shayesteh M.;Daunt C.;O’Connell D.;Djara V.;White M.;Long B.;Duffy R. (2011) European Solid-State Device Research Conference. : . |
| 2011 | Germanium Fin Structure Optimization for Future MugFET and FinFET Applications Shayesteh, M,Duffy, R,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Djara, V,Schmidt, M,Petkov, N,Kelleher, AM,Roozeboom, F,Kwong, DL,Timans, PJ,Gusev, EP,Iwai, H,Ozturk, MC,Narayanan V (2011) Germanium Fin Structure Optimization for Future MugFET and FinFET Applications. : . |
| 2011 | SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2011) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS. : ELECTROCHEMICAL SOCIETY INC. |
| 2011 | DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3 Gajula, DR;McNeill, DW;Baine, P;Fleming, P;Duffy, R;Armstrong, BM (2011) DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3. : ELECTROCHEMICAL SOC INC. |
| 2010 | AIP Conference Proceedings Duffy R.;Shayesteh M. (2010) AIP Conference Proceedings. : . |
| 2010 | ION IMPLANTATION TECHNOLOGY 2010 Duffy, R;Shayesteh, M (2010) ION IMPLANTATION TECHNOLOGY 2010. : AMER INST PHYSICS. |
| 2009 | 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R (2009) 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING. : IEEE. |
| 2009 | SOLID-STATE ELECTRONICS Ferain, I;Duffy, R;Collaert, N;van Dal, MJH;Pawlak, BJ;O’Sullivan, B;Witters, L;Rooyackers, R;Conard, T;Popovici, M;van Elshocht, S;Kaiser, M;Weemaes, RGR;Swerts, J;Jurczak, M;Lander, RJP;De Meyer, K (2009) SOLID-STATE ELECTRONICS. : PERGAMON-ELSEVIER SCIENCE LTD. |
| 1999 | Solid-State Device Research Conference, 1999. Proceeding of the 29th European Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : . |
| 1999 | Solid-State Device Research Conference, 1999. Proceeding of the 29th European Duffy, R and Concannon, A and Mathewson, A and Slotboom, M and Dormans, D and Wils, N and Verhaar, R (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : . |
| 1995 | IEE Colloquium (Digest) Duffy R.;Concannon A.;Mathewson A. (1995) IEE Colloquium (Digest). : . |
Editorship
| Year | Publication |
|---|---|
| 2020 | Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics Hiller, D;Duffy, R;Strehle, S;Stradins, P (2020) Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics. : WILEY-V C H VERLAG GMBH. |
| 2017 | Preface Napolitani, E;Williams, J;Duffy, R (2017) Preface. : ELSEVIER SCI LTD. |
| 2016 | E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface Napolitani, E,Duffy, R,Zographos, N,van Dal, M (2016) E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface. : . |
| 2012 | Preface: 19th International Conference on Ion Implantation Technology Pelaz L.;Santos I.;Duffy R.;Torregrosa F.;Bourdelle K. (2012) Preface: 19th International Conference on Ion Implantation Technology. : . |
Reviews
| Year | Publication |
|---|---|
| 2020 | Progress on Germanium-Tin Nanoscale Alloys Doherty, J;Biswas, S;Galluccio, E;Broderick, CA;Garcia-Gil, A;Duffy, R;O'Reilly, EP;Holmes, JD (2020) Progress on Germanium-Tin Nanoscale Alloys. : AMER CHEMICAL SOC. |
| 2016 | Chemical approaches for doping nanodevice architectures O'Connell, J;Biswas, S;Duffy, R;Holmes, JD (2016) Chemical approaches for doping nanodevice architectures. : IOP PUBLISHING LTD. |
| 2014 | Processing of germanium for integrated circuits Duffy R.;Shayesteh M.;Yu R. (2014) Processing of germanium for integrated circuits. : . |
Conference Contributions
| Year | Publication |
|---|---|
| 1998 | Simulation based development of EEPROM devices within a 0.35 $mu$m process Duffy, R and Concannon, A and Mathewson, A and de Graaf, C and Slotboom, M and Verhaar, R (1998) Simulation based development of EEPROM devices within a 0.35 $mu$m process. : . |
Professional Activities
Journal Activities
- IEEE Transactions on Electron Devices – Referee
- IEEE Electron Device Letters – Referee
- J Appl Phys – Referee
- Applied Physics Letters – Referee
- Vacuum – Referee
- Journal of Materials Chemistry C – Referee
- Langmuir – Referee
- Appl Surf Sci – Referee
- Semiconductor Science and Technology – Referee
- Physica Status Solidi A – Referee
- Mat Sci Semicon Proc – Referee
- Nanoscale – Referee
- Beilstein Journal of Nanotechnology – Referee
- ACS Omega – Referee
- J. Phys. Chem. – Referee
- Chemistry of Materials – Referee
Committees
- European Material Research Society (E-MRS) , Symposium on “Advances in silicon-nanoelectronics, -nanostructures and high-efficiency Si-photovoltaics”
- European Material Research Society (E-MRS) , Symposium “Integration, metrology and Technology CAD co-development for sub-10nm technology nodes”
- European Material Research Society (E-MRS), Symposium on ““Nanomaterials and Processes for Advanced Semiconductor CMOS Devices”.
- Ion Implantation Technology Conference 2012,
- Ion Implantation Technology Conference 2014,
- Ion Implantation Technology Conference 2016,
- Ion Implantation Technology Conference 2018,
- Ion Implantation Technology Conference 2020,
- IEEENANO 2018,
- SISPAD 2018,
- European Material Research Society (E-MRS) , “Material science and devices issues for future generation Si-based technologies”
- European Material Research Society (E-MRS),
Professional Associations
- Team member for More Moore
Teaching Activities
Recent Postgraduates
| Student | Degree | Graduation Year | Institution | Thesis |
|---|---|---|---|---|
| Maryam Shayesteh | PHD | 2014 | University College Cork | PhD – Novel processes, test structures, and characterisation for future Germanium technologies |
| Ran Yu | PHD | 2013 | University College Cork | PhD – A study of Silicon and Germanium junctionless transistors |
| Fiachra Harrington | 2020 | University College Cork | ME in Electrical and Electronic Engineering: Disruptive Devices for Quantum Technologies | |
| Vinay Kumar Verma | 2020 | University College Cork | MEngSc in Electrical and Electronic Engineering: Assessing Self Assembled Monolayer Quality on Germanium Devices | |
| Fintan Meaney | 2020 | University College Cork | Masters – Conformal and non-destructive doping towards gate=all-around nanowire devices | |
| Noel Kennedy | PHD | 2020 | University College Cork | PhD – Monolayer doping of bulk and thin body Group IV semiconductors |
| Emmanuele Galluccio | PHD | 2020 | University College Cork | PhD – GeSn semiconductor for micro nanoelectronic applications |
| Gioele Mirabelli | PHD | 2020 | University College Cork | PhD – Two-dimensional semiconductors for future electronics |
| Ilaria Urbani | 2021 | Master Degree in Physics (primary institution Universita di Padova) – “2D materials and devices” |