Leader in Integrated ICT Hardware & Systems
+353 (0)21 2346664
scott.monaghan (at) tyndall (dot) ie
Alternative semiconductors to silicon, such as III-V and 2D materials, and alternative high dielectric constant gate oxides such as transition-metal oxides. Engineering and electrical characterisation of material and electrical properties of thin film high-k oxides and alternative thin film III-V and 2D semiconductors for the benefit of nanoelectronics, multifunctional material and device integration, and energy harvesting. Expertise encompasses Hall-effect electromagnetic analysis and on-wafer MOSFET device electrical characterisation.
| Year | Publication |
|---|---|
| 2013 | Gate stacks Engstr"om, Olof and Mitrovic, IZ and Hall, S and Hurley, PK and Cherkaoui, K and Monaghan, S and Gottlob, HDB and Lemme, MC (2013) Gate stacks. : . |
| Year | Journal | Publication |
|---|---|---|
| 2021 | Solid-State Electronics | On the interpretation of MOS impedance data in both series and parallel circuit topologies Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2021) On the interpretation of MOS impedance data in both series and parallel circuit topologies. : . |
| 2021 | Solid-State Electronics | Investigating interface states and oxide traps in the MoS2/oxide/Si system Coleman, E and Mirabelli, G and Bolshakov, P and Zhao, P and Caruso, E and Gity, F and Monaghan, S and Cherkaoui, K and Balestra, V and Wallace, RM and others (2021) Investigating interface states and oxide traps in the MoS2/oxide/Si system. : . |
| 2021 | Applied Materials Today | Structural and electrical characterisation of PtS from H2S-converted Pt Monaghan, Scott and Coleman, Emma M and Ansari, Lida and Lin, Jun and Buttimer, Alexandra and Coleman, Patrick A and Connolly, James and Povey, Ian M and Kelleher, Bryan and Coile'ain, Cormac 'O and others (2021) Structural and electrical characterisation of PtS from H2S-converted Pt. : . |
| 2021 | Microelectronics Reliability | Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures Munoz-Gorriz, J;Monaghan, S;Cherkaoui, K;Sune, J;Hurley, PK;Miranda, E (2021) Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures. : PERGAMON-ELSEVIER SCIENCE LTD. [Details] |
| 2021 | Acs Applied Materials & Interfaces | Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O'Connor, GM (2021) Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer. : AMER CHEMICAL SOC. [Details] |
| 2020 | 2D Materials | Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality Lin, Jun and Monaghan, Scott and Sakhuja, Neha and Gity, Farzan and Jha, Ravindra Kumar and Coleman, Emma M and Connolly, James and Cullen, Conor P and Walsh, Lee A and Mannarino, Teresa and others (2020) Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality. : . |
| 2020 | IEEE Transcations On Electron Devices | The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley (2020) The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems. : . [Details] |
| 2019 | IEEE Transactions on Device and Materials Reliability | Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors Muñoz-Gorriz, J.; Blachier, D.; Reimbold, G.; Campabadal, F.; Sune, J.; Monaghan, Scott; Cherkaoui, Karim; Hurley, Paul K.; Miranda, E. (2019) Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors. : . [Details] |
| 2019 | Microelectronic Engineering | Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2019) Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices. : . |
| 2019 | Npj 2d Materials And Applications | Quantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C L. Ansari, S. Monaghan, N. McEvoy, C. Ó Coileáin, C. P. Cullen, J. Lin, R. Siris, T. Stimpel-Lindner, K. F. Burke, G. Mirabelli, R. Duffy, E. Caruso, R. E. Nagle, G. S. Duesberg, P. K. Hurley, and F. Gity (2019) Quantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C. : . [Details] |
| 2019 | ACS omega | Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation Mirabelli, Gioele and Walsh, Lee A and Gity, Farzan and Bhattacharjee, Shubhadeep and Cullen, Conor P and Ó Coileáin, Cormac and Monaghan, Scott and McEvoy, Niall and Nagle, Roger and Hurley, Paul K and others (2019) Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation. : . |
| 2018 | Nano letters | Wide spectral photoresponse of layered platinum diselenide-based photodiodes Yim, Chanyoung and McEvoy, Niall and Riazimehr, Sarah and Schneider, Daniel S and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Lemme, Max C and Duesberg, Georg S (2018) Wide spectral photoresponse of layered platinum diselenide-based photodiodes. : . |
| 2018 | Beilstein journal of nanotechnology | Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates Kennedy, Noel and Duffy, Ray and Eaton, Luke and O’Connell, Dan and Monaghan, Scott and Garvey, Shane and Connolly, James and Hatem, Chris and Holmes, Justin D and Long, Brenda (2018) Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates. : . |
| 2018 | Journal of Electronic Materials | Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis Mu~noz-Gorriz, J and Monaghan, S and Cherkaoui, K and Su~n'e (2018) Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis. : . |
| 2017 | Applied Physics Letters | Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration O'Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and Sheehan, Brendan and Povey, Ian M and Hurley, Paul K (2017) Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration. : . |
| 2017 | Materials Science in Semiconductor Processing | Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system Byrne, Conor and Brennan, B and Lundy, R and Bogan, J and Brady, A and Gomeniuk, YY and Monaghan, S and Hurley, PK and Hughes, G (2017) Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system. : . |
| 2017 | Microelectronic Engineering | Spatial analysis of failure sites in large area MIM capacitors using wavelets Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2017) Spatial analysis of failure sites in large area MIM capacitors using wavelets. : . |
| 2017 | Microelectronic Engineering | Examining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, B. Sheehan, and P. K. Hurley (2017) Examining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing. : . [Details] |
| 2017 | Applied Physics Letters | Rhenium-doped MoS2 films Hallam, Toby and Monaghan, Scott and Gity, Farzan and Ansari, Lida and Schmidt, Michael and Downing, Clive and Cullen, Conor P and Nicolosi, Valeria and Hurley, Paul K and Duesberg, Georg S (2017) Rhenium-doped MoS2 films. : . |
| 2017 | Journal of Applied Physics | Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2017) Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures. : . |
| 2016 | Journal of Applied Physics | Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 Mirabelli, Gioele and McGeough, Conor and Schmidt, Michael and McCarthy, Eoin K and Monaghan, Scott and Povey, Ian M and McCarthy, Melissa and Gity, Farzan and Nagle, Roger and Hughes, Greg and others (2016) Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2. : . |
| 2016 | AIP Advances | Back-gated Nb-doped MoS2 junctionless field-effect-transistors Mirabelli, Gioele and Schmidt, Michael and Sheehan, Brendan and Cherkaoui, Karim and Monaghan, Scott and Povey, Ian and McCarthy, Melissa and Bell, Alan P and Nagle, Roger and Crupi, Felice and others (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : . |
| 2015 | Microelectronic Engineering | Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors O’Connor, 'E and Cherkaoui, K and Monaghan, S and Sheehan, B and Povey, IM and Hurley, PK (2015) Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors. : . |
| 2015 | Microelectronic Engineering | A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian and O’Connor, 'Eamon and Sheehan, Brendan and Hurley, Paul (2015) A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system. : . |
| 2015 | Microelectronic Engineering | A Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2015) A Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System. : . [Details] |
| 2015 | Microelectronic Engineering | Electrical characterisation of InGaAs on insulator structures Cherkaoui, K and Gomeniuk, YY and Daix, N and O’Brien, J and Blake, A and Thomas, KK and Pelucchi, E and O’Connell, D and Sheehan, B and Monaghan, S and others (2015) Electrical characterisation of InGaAs on insulator structures. : . |
| 2014 | ECS Transactions | Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures Igor Petrovitch Tyagulskyy, Stanislav Igorovitch Tiagulskyi, Aleksey Nickolaevitch Nazarov, Vladimir Sergeevitch Lysenko, P. K. Hurley, K. Cherkaoui and S. Monaghan (2014) Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures. : . [Details] |
| 2014 | Applied Physics Letters | Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing Cabrera, W and Brennan, B and Dong, H and O'Regan, Terrance P and Povey, Ian M and Monaghan, Scott and O'Connor, 'Eamon and Hurley, Paul K and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : . |
| 2014 | Thin solid films | Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs Bennett, NS and Cherkaoui, K and Wong, CS and O'Connor, 'E and Monaghan, S and Hurley, P and Chauhan, L and McNally, PJ (2014) Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs. : . |
| 2014 | IEEE Transactions on Device and Materials Reliability | Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions Mas, Xavier Saura and Monaghan, Scott and Hurley, Paul K and Su~n'e (2014) Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions. : . |
| 2014 | Journal Of Vacuum Science & Technology A: Vacuum, Surfaces, And Films | High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J. (2014) High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition. : . [Details] |
| 2014 | IEEE Transactions on Electron Devices | Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions Monaghan, Scott and O’Connor, 'Eamon and Rios, Rafael and Ferdousi, Fahmida and Floyd, Liam and Ryan, Eimear and Cherkaoui, Karim and Povey, Ian M and Kuhn, Kelin J and Hurley, Paul K (2014) Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions. : . |
| 2013 | ECS Transactions | Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, 'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : . |
| 2013 | Journal of Vacuum Science & Technology B | Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and Sheehan, Brendan J and Cherkaoui, Karim and Hutchinson, Barry JA and Hurley, Paul K and Ferdousi, Fahmida and Rios, Rafael and Kuhn, Kelin J and others (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors. : . |
| 2013 | Journal of Vacuum Science & Technology B | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors Miranda, Enrique and Jim'enez, David and Su~n'e (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . |
| 2013 | Journal of Applied Physics | An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors Lin, Jun and Gomeniuk, Yuri Y and Monaghan, Scott and Povey, Ian M and Cherkaoui, Karim and O'Connor, 'Eamon and Power, Maire and Hurley, Paul K (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors. : . |
| 2013 | IEEE Transactions on Device and Materials Reliability | The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System P. K. Hurley, É. O’Connor, V. Djara, S. Monaghan, I. M. Povey, R. D. Long, B. Sheehan, J. Lin, P. C. McIntyre, B. Brennan, R. M. Wallace, M. E. Pemble, and K. Cherkaoui (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details] |
| 2013 | Journal of Applied Physics | Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics Saura, X and Su~n'e (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : . |
| 2013 | Journal of Applied Physics | An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors J. Lin, Y. Y. Gomeniuk, S. Monaghan, I. M. Povey, K. Cherkaoui, É. O'Connor, M. Power, and P. K. Hurley (2013) An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors. : . |
| 2013 | Microelectronic engineering | Electrically active interface defects in the In0. 53Ga0. 47As MOS system Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, 'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In0. 53Ga0. 47As MOS system. : . |
| 2012 | Electronics Letters | ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity Monaghan, S and Povey, IM (2012) ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity. : . |
| 2012 | IEEE transactions on electron devices | Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric. : . |
| 2012 | Microelectronic engineering | The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications Toomey, B and Cherkaoui, K and Monaghan, S and Djara, V and O’Connor, 'E and O’Connell, D and Oberbeck, L and Tois, E and Blomberg, T and Newcomb, SB and others (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : . |
| 2012 | Journal of Applied Physics | Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates O’Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and O’Connell, D and Povey, I and Casey, P and Newcomb, Simon B and Gomeniuk, Yuri Y and Provenzano, G and Crupi, Felice and others (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : . |
| 2012 | ECS Transactions | Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics? K. Cherkaoui, V. Djara, É. O’Connor, J. Lin, M. A. Negara, I. M. Povey, S. Monaghan, and P. K. Hurley (2012) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics?. : . [Details] |
| 2012 | Journal of the Electrochemical Society | Erratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)] Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)]. : . |
| 2011 | Microelectronic Engineering | Transport and interface states in high-$kappa$ LaSiOx dielectric Gomeniuk, YY and Gomeniuk, YV and Tyagulskii, IP and Tyagulskii, SI and Nazarov, AN and Lysenko, VS and Cherkaoui, K and Monaghan, S and Hurley, PK (2011) Transport and interface states in high-$kappa$ LaSiOx dielectric. : . |
| 2011 | Journal of Applied Physics | A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers O’Connor, 'Eamon and Brennan, B and Djara, Vladimir and Cherkaoui, Karim and Monaghan, Scott and Newcomb, Simon B and Contreras, R and Milojevic, M and Hughes, Gregory and Pemble, Martyn E and others (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers. : . |
| 2011 | Applied Physics Letters | Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment O’Connor, 'Eamon and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and Hurley, Paul K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment. : . |
| 2011 | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer Monaghan, S and O’Mahony, A and Cherkaoui, K and O’Connor, 'E and Povey, IM and Nolan, MG and O’Connell, D and Pemble, ME and Hurley, PK and Provenzano, G and others (2011) Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer. : . |
| 2011 | Journal of The Electrochemical Society | Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2011) Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors. : . |
| 2011 | Microelectronic Engineering | Investigation of bulk defects in amorphous and crystalline HfO2 thin films Modreanu, M. and Monaghan, S. and Povey, I.M. and Cherkaoui, K. and Hurley, P.K. and Androulidaki, M. (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details] |
| 2011 | ECS Transactions | Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : . |
| 2011 | Microelectronic Engineering | Multi-technique characterisation of MOVPE-grown GaAs on Si Wong, Chiu Soon; Bennett, Nick S.; McNally, Patrick J.; Galiana, B.; Tejedor, P.; Benedicto, M.; Molina-Aldareguia, J. M.; Monaghan, Scott; Hurley, Paul K.; Cherkaoui, Karim (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . [Details] |
| 2011 | Nanoscale research letters | Fabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application Benedicto, Marcos and Galiana, Beatriz and Molina-Aldareguia, Jon M and Monaghan, Scott and Hurley, Paul K and Cherkaoui, Karim and Vazquez, Luis and Tejedor, Paloma (2011) Fabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application. : . |
| 2010 | ECS Transactions | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and O'Connell, Dan and others (2010) Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks. : . |
| 2010 | ECS Transactions | Electrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition Gomeniuk, Yuri Y and Gomeniuk, Yuri V and Nazarov, Alexei N and Hurley, Paul K and Cherkaoui, Karim and Monaghan, Scott and Gottlob, Heiner and Schmidt, Mathias and Schubert, J"urgen and Lopes, J Marcelo J and others (2010) Electrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition. : . |
| 2010 | Applied Physics Letters | Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer O’Mahony, Aileen and Monaghan, Scott and Provenzano, G and Povey, Ian M and Nolan, MG and O’Connor, 'Eamon and Cherkaoui, Karim and Newcomb, Simon B and Crupi, Felice and Hurley, Paul K and others (2010) Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer. : . |
| 2010 | ECS Transactions | Investigation of High-$kappa$/InxGa1-xAs Interfaces Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait D and Djara, Vladimir and O'Mahony, A and Nagle, R and Pemble, Martyn E and Hurley, Paul K (2010) Investigation of High-$kappa$/InxGa1-xAs Interfaces. : . |
| 2010 | ECS Transactions | Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system Hurley, Paul K and Long, Rathnait and O'Regan, Terrance and O'Connor, Eamon and Monaghan, Scott and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system. : . |
| 2009 | Microelectronics Reliability | Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks Miranda, Enrique and Mart'in-Mart'inez, Javier and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, Karim and Monaghan, S and Long, R and O’Connell, D and Hurley, Paul K (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : . |
| 2009 | Applied physics letters | Electrical characterization of the soft breakdown failure mode in MgO layers Miranda, Enrique and O’Connor, E and Cherkaoui, Karim and Monaghan, Scott and Long, R and O’Connell, Deborah and Hurley, Paul K and Hughes, Greg and Casey, Patrick (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : . |
| 2009 | ECS Transactions | Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers Miranda, Enrique and O'Connor, Eamon and Hughs, Greg and Casey, Patrick and Cherkaoui, Karim and Monaghan, Scott and Long, Rathnait and O'Connell, Dan and Hurley, Paul (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : . |
| 2009 | Microelectronic engineering | Degradation dynamics and breakdown of MgO gate oxides Miranda, E and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O’Connell, D and Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. : . |
| 2009 | IEEE electron device letters | $$backslash$hbox $$TiN/ZrO$$ _ $$2$$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$backslash$hbox $$ZrO$$ _ $$2$$ $ for DRAM Applications Monaghan, S and Cherkaoui, K and O'connor, E and Djara, V and Hurley, PK and Oberbeck, L and Tois, E and Wilde, L and Teichert, S (2009) $$backslash$hbox $$TiN/ZrO$$ _ $$2$$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$backslash$hbox $$ZrO$$ _ $$2$$ $ for DRAM Applications. : . |
| 2009 | Solid-State Electronics | Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . |
| 2009 | Applied Physics Letters | Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods O’Connor, 'Eamon and Monaghan, Scott and Long, Rathnait D and O’Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn E and Brammertz, Guy and Heyns, Marc and Newcomb, Simon B and others (2009) Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods. : . |
| 2009 | ECS Transactions | Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) Paul K. Hurley, Eamon O'Connor, Scott Monaghan, Rathnait Long, Aileen O'Mahony, Ian M. Povey, Karim Cherkaoui, John MacHale, Aidan Quinn, Guy Brammertz, Marc M. Heyns, Simon Newcomb, Valeri V. Afanas'ev, Arif Sonnet, Rohit Galatage, Naqi Jivani, Eric Vogel, Robert M. Wallace and Martyn Pemble (2009) Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53). : . [Details] |
| 2009 | Journal of Applied Physics | Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition Long, Rathnait D and O’Connor, 'Eamon and Newcomb, Simon B and Monaghan, Scott and Cherkaoui, Karim and Casey, P and Hughes, Gregory and Thomas, Kevin K and Chalvet, F and Povey, Ian M and others (2009) Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition. : . |
| 2009 | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena | Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors Lu, Y and Hall, S and Tan, LZ and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and others (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. : . |
| 2008 | Journal of Applied Physics | Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation Cherkaoui, Karim and Monaghan, Scott and Negara, Muhammad A and Modreanu, Mircea and Hurley, Paul K and O’Connell, Dan and McDonnell, Stephen and Hughes, Gregory and Wright, S and Barklie, RC and others (2008) Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation. : . |
| 2007 | Applied physics letters | Stress in silicon interlayers at the Si O x/ Ge interface O’Callaghan, Sean and Monaghan, Scott and Elliott, Simon D and Greer, James C (2007) Stress in silicon interlayers at the Si O x/ Ge interface. : . |
| 2007 | Physical Review B | Atomic scale model interfaces between high-k hafnium silicates and silicon Monaghan, S and Greer, JC and Elliott, SD (2007) Atomic scale model interfaces between high-k hafnium silicates and silicon. : . |
| 2006 | Journal of computer-aided materials design | Quantum mechanics at the core of multi-scale simulations Bartlett, Rodney J and McClellan, Josh and Greer, JC and Monaghan, Scott (2006) Quantum mechanics at the core of multi-scale simulations. : . |
| 2005 | Journal of applied physics | Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale Monaghan, Scott and Greer, James C and Elliott, Simon D (2005) Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale. : . |
| Year | Publication |
|---|---|
| 2021 | 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021) E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. K. Hurley (2021) 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021). : . |
| 2021 | ECS Meeting Abstracts - IOP Science Publishing Jun Lin, Scott Monaghan, Neha Sakhuja, Farzan Gity, Ravindra Kumar Jha, Emma Coleman, James Connolly, Conor Cullen, Lee Walsh, Teresa Mannarino, Michael Schmidt, Brendan Sheehan, Georg Duesberg, Niall Mc Evoy, Navakanta Bhat, Paul Hurley, Ian Povey, Shubhadeep Bhattacharjee (2021) ECS Meeting Abstracts - IOP Science Publishing. : . [Details] |
| 2020 | ECS Meeting Abstracts Walsh, Lee and Ansari, Lida and Monaghan, Scott and Zhussupbekov, Kuanysh and Zhussupbekova, Ainur and Coile'ain, Cormac 'O and McEvoy, Niall and Shvets, Igor V and Barton, Adam T and Hinkle, Christopher and others (2020) ECS Meeting Abstracts. : . |
| 2019 | 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2019) 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). : . |
| 2018 | ECS Meeting Abstracts Ryan, Louise P and Walsh, Adrian and McCarthy, Melissa M and Monaghan, Scott and Modreanu, M and Romanitan, Cosmin and Chaix-Pluchery, Odette and O'Brien, S and Pemble, Martyn E and Povey, Ian M (2018) ECS Meeting Abstracts. : . |
| 2018 | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestri, P. Hurley, and L. Selmi (2018) Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). : . [Details] |
| 2018 | ECS Meeting Abstracts Coleman, Emma and Monaghan, Scott and Gity, Farzan and Schmidt, Michael and Connolly, James and Lin, Jun and Walsh, Lee and Cherkaoui, Karim and O'Neill, Katie and McEvoy, Niall and others (2018) ECS Meeting Abstracts. : . |
| 2017 | 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Monaghan, Scott and Gity, Farzan and Duffy, Ray and Mirabelli, Gioele and McCarthy, Melissa and Cherkaoui, Karim and Povey, Ian M and Nagle, Roger E and Hurley, Paul K and Lindemuth, Jeffrey R and others (2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). : . |
| 2017 | ECS Meeting Abstracts P. K. Hurley, Scott Monaghan, Eamon O'Connor, Enrico Caruso, Karim Cherkaoui, Liam Floyd, Ian M Povey, David Alan John Millar, Uthayasankaran Peralagu and Iain G Thayne (2017) ECS Meeting Abstracts. : . [Details] |
| 2017 | 2017 47th European Solid-State Device Research Conference (ESSDERC) Mirabelli, Gioele and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Duffy, Ray (2017) 2017 47th European Solid-State Device Research Conference (ESSDERC). : . |
| 2017 | 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) Gity, Farzan and Ansari, Lida and Monaghan, Scott and Mirabelli, Gioele and Torchia, Pasqualino and Hydes, Alan and Schmidt, Michael and Sheehan, Brendan and McEvoy, Niall and Hallam, Toby and others (2017) 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC). : . |
| 2017 | 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) Torchia, Pasqualino and Pampili, Pietro and O'Connell, John and O'Brien, Joe and White, Mary and Schmidt, Michael and Sheehan, Brendan and Waldron, Finbarr and Holmes, Justin D and Monaghan, Scott and others (2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS). : . |
| 2016 | ECS Meeting Abstracts Mirabelli, Gioele and Duffy, Ray and Hurley, PK and Monaghan, Scott and Cherkaoui, Karim and Schmidt, Michael and Sheehan, Brendan and Povey, Ian M and McCarthy, Melissa and Nagle, Roger and others (2016) ECS Meeting Abstracts. : . |
| 2015 | ECS Meeting Abstracts Hurley, PK and Gomeniuk, Yuri and Lin, Jun and Monaghan, Scott and Povey, Ian M and Pemble, Martyn E and Hutchinson, BJ and Sheehan, Brendan and Djara, Vladimir and O'Connor, Eamon and others (2015) ECS Meeting Abstracts. : . |
| 2015 | 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Y.-C. Fu, U. Peralagu, O. Ignatova, X. Li, R. Droopad, I. Thayne, J. Lin, I. Povey, S. Monaghan, and P. Hurley (2015) 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). : . [Details] |
| 2014 | 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2014) 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW. : . [Details] |
| 2012 | ECS Meeting Abstracts Cherkaoui, Karim and Djara, Vladimir and O'Connor, Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) ECS Meeting Abstracts. : . |
| 2012 | 2012 28th International Conference on Microelectronics Proceedings Miranda, E and Jim'enez, D and Su~n'e (2012) 2012 28th International Conference on Microelectronics Proceedings. : . |
| 2012 | 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, 'E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) 2012 13th International Conference on Ultimate Integration on Silicon (ULIS). : . |
| 2011 | Advanced Materials Research Gomeniuk, YY and Gomeniuk, YV and Nazarov, A and Hurley, PK and Cherkaoui, Karim and Monaghan, Scott and Hellstr"om, Per Erik and Gottlob, HDB and Schubert, J and Lopes, JMJ (2011) Advanced Materials Research. : . |
| 2011 | ECS Meeting Abstracts O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) ECS Meeting Abstracts. : . |
| 2010 | ECS Meeting Abstracts O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Blake, Alan and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and others (2010) ECS Meeting Abstracts. : . |
| 2010 | ECS Meeting Abstracts Hurley, Paul K and O'Connor, Eamon and O'Regan, Terrance and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) ECS Meeting Abstracts. : . |
| 2010 | ECS Meeting Abstracts Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Hurley, Paul K (2010) ECS Meeting Abstracts. : . |
| 2009 | ECS Meeting Abstracts Hurley, Paul K and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and O'Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn and MacHale, John and Quinn, Aidan and others (2009) ECS Meeting Abstracts. : . |
| 2009 | 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. : . |
| 2009 | 2009 IEEE International Reliability Physics Symposium Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) 2009 IEEE International Reliability Physics Symposium. : . |
| 2008 | WODIM, Berlin, June 2008 Lu, Y and Hall, S and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and Gottlob, HDB and others (2008) WODIM, Berlin, June 2008. : . |
| 2008 | Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA O'Connor, E and Long, RD and Monaghan, S and Brammertz, Guy and Cherkaoui, K and O'Mahony, A and Povey, IM and Pemble, ME and Heyns, Marc and Afanas' ev, Valeri and others (2008) Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA. : . |
| 2008 | 2008 9th International Conference on Ultimate Integration of Silicon Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2008) 2008 9th International Conference on Ultimate Integration of Silicon. : . |
| 2002 | 7th Irish Atomistic Simulators Meeting Trinity College Dublin Monaghan, Scott and Elliott, Simon and Greer, Jim (2002) 7th Irish Atomistic Simulators Meeting Trinity College Dublin. : . |
| 2002 | 7th Irish Atomistic Simulators Meeting Trinity College Dublin Greer, Jim and Larsson, Andreas and Delaney, Paul and Elliott, Simon and Nolan, Mick and Monaghan, Scott and Pinto, Henry and Cheng, Mr and O’Reilly, Eoin and Pereira, Mauro and others (2002) 7th Irish Atomistic Simulators Meeting Trinity College Dublin. : . |
| Year | Publication |
|---|---|
| 2016 | Single crystal high dielectric constant material and method for making same Monaghan, Scott and Povey, Ian (2016) Single crystal high dielectric constant material and method for making same. : . |
| 2007 | First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110) Monaghan, Scott (2007) First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110). : . |
| 2002 | High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides Monaghan, Scott (2002) High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides. : . |
My teaching interests are in Physics, Chemistry, Mathematics and Nano-electronics.