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Leader in Integrated ICT Hardware & Systems

Scott Monaghan -

Contact

+353 (0)21 2346664
scott.monaghan (at) tyndall (dot) ie

  • MicroNano Systems
Dr Scott Monaghan (Ailbe Ó Manacháin) is a senior member of IEEE and a senior staff scientist, fellow, lecturer and lead PI at UCC. He received a first-class honours BSc degree in mathematics and physics part-time from the Open University in Ireland in 1999 while working full-time within the industrial sector. He also received the Masters of Engineering Science degree in 2002 part-time while working full-time within the research and development industrial sector, and the Ph.D. degree in 2007 (full-time) in the area of materials science, both from the University of Ireland, Cork, Ireland. He specialises in the engineering and application of semiconducting materials such as III-V and transition-metal dichalcogenides (2D materials), as well as transparent conductive oxides, for the benefit of nanoelectronics, multifunctional materials systems, 3D integration and renewable energy harvesting. Expertise encompasses Hall-effect analysis and device/cell/system electrical, photoelectrical and photoelectrochemical characterisation.

Engineering and application of semiconducting materials such as III-V and transition-metal dichalcogenides (2D materials), as well as transparent conductive oxides, for the benefit of nanoelectronics, multifunctional materials systems, 3D integration and renewable energy harvesting. Expertise encompasses Hall-effect analysis and device/cell/system electrical, photoelectrical and photoelectrochemical characterisation.

Book Chapters

YearPublication
2013Gate stacks
Engstr"om, Olof and Mitrovic, IZ and Hall, S and Hurley, PK and Cherkaoui, K and Monaghan, S and Gottlob, HDB and Lemme, MC (2013) Gate stacks. : .

Peer Reviewed Journals

YearJournalPublication
2023Applied Physics LettersScrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films
Emma Coleman, Scott Monaghan, Farzan Gity, Gioele Mirabelli, Ray Duffy, Brendan Sheehan, Shashank Balasubramanyam, Ageeth A. Bol, Paul Hurley (2023) Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films. : . [Details]
2023ACS Applied Energy MaterialsAtomic-Layer-Deposited TiO2-IrOX Nanoscale Thin-Film Electrocatalysts for Water and Chloride Oxidation: Influence of Local Phase Separation
Babadi A.;Monaghan S.;O’Rourke C.;Braun M.;Brock L.;Cheng H.;Tessner T.;Hurley P.K.;Mills A.;McIntyre P.C. (2023) Atomic-Layer-Deposited TiO2-IrOX Nanoscale Thin-Film Electrocatalysts for Water and Chloride Oxidation: Influence of Local Phase Separation. : . [Details]
2021Solid-State ElectronicsInvestigating interface states and oxide traps in the MoS2/oxide/Si system
Coleman, E and Mirabelli, G and Bolshakov, P and Zhao, P and Caruso, E and Gity, F and Monaghan, S and Cherkaoui, K and Balestra, V and Wallace, RM and others (2021) Investigating interface states and oxide traps in the MoS2/oxide/Si system. : .
2021Solid-State ElectronicsOn the interpretation of MOS impedance data in both series and parallel circuit topologies
Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2021) On the interpretation of MOS impedance data in both series and parallel circuit topologies. : .
2021Applied Materials TodayStructural and electrical characterisation of PtS from H2S-converted Pt
Monaghan, Scott and Coleman, Emma M and Ansari, Lida and Lin, Jun and Buttimer, Alexandra and Coleman, Patrick A and Connolly, James and Povey, Ian M and Kelleher, Bryan and Coile'ain, Cormac 'O and others (2021) Structural and electrical characterisation of PtS from H2S-converted Pt. : .
2021Acs Applied Materials & InterfacesFemtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer
Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O'Connor, GM (2021) Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer. : AMER CHEMICAL SOC. [Details]
2021Microelectronics ReliabilityApplication of artificial neural networks to the identification of weak electrical regions in large area MIM structures
Munoz-Gorriz, J;Monaghan, S;Cherkaoui, K;Sune, J;Hurley, PK;Miranda, E (2021) Application of artificial neural networks to the identification of weak electrical regions in large area MIM structures. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
20202D MaterialsLarge-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality
Lin, Jun and Monaghan, Scott and Sakhuja, Neha and Gity, Farzan and Jha, Ravindra Kumar and Coleman, Emma M and Connolly, James and Cullen, Conor P and Walsh, Lee A and Mannarino, Teresa and others (2020) Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality. : .
2020IEEE Transcations On Electron DevicesThe Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley (2020) The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems. : . [Details]
2019IEEE Transactions on Device and Materials ReliabilityAssessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors
Muñoz-Gorriz, J.; Blachier, D.; Reimbold, G.; Campabadal, F.; Sune, J.; Monaghan, Scott; Cherkaoui, Karim; Hurley, Paul K.; Miranda, E. (2019) Assessing the correlation between location and size of catastrophic breakdown events in high-k mim capacitors. : . [Details]
2019Microelectronic EngineeringDetection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices
Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2019) Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices. : .
2019Npj 2d Materials And ApplicationsQuantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C
L. Ansari, S. Monaghan, N. McEvoy, C. Ó Coileáin, C. P. Cullen, J. Lin, R. Siris, T. Stimpel-Lindner, K. F. Burke, G. Mirabelli, R. Duffy, E. Caruso, R. E. Nagle, G. S. Duesberg, P. K. Hurley, and F. Gity (2019) Quantum Confinement-Induced Semimetal-to-Semiconductor Evolution in Large-Area Ultra-Thin PtSe2 Films Grown at 400 °C. : . [Details]
2019ACS omegaEffects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation
Mirabelli, Gioele and Walsh, Lee A and Gity, Farzan and Bhattacharjee, Shubhadeep and Cullen, Conor P and Ó Coileáin, Cormac and Monaghan, Scott and McEvoy, Niall and Nagle, Roger and Hurley, Paul K and others (2019) Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation. : .
2018Beilstein journal of nanotechnologyPhosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates
Kennedy, Noel and Duffy, Ray and Eaton, Luke and O’Connell, Dan and Monaghan, Scott and Garvey, Shane and Connolly, James and Hatem, Chris and Holmes, Justin D and Long, Brenda (2018) Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates. : .
2018Nano lettersWide spectral photoresponse of layered platinum diselenide-based photodiodes
Yim, Chanyoung and McEvoy, Niall and Riazimehr, Sarah and Schneider, Daniel S and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Lemme, Max C and Duesberg, Georg S (2018) Wide spectral photoresponse of layered platinum diselenide-based photodiodes. : .
2018Journal of Electronic MaterialsCharacterization of the failure site distribution in MIM devices using zoomed wavelet analysis
Mu~noz-Gorriz, J and Monaghan, S and Cherkaoui, K and Su~n'e (2018) Characterization of the failure site distribution in MIM devices using zoomed wavelet analysis. : .
2017Journal of Applied PhysicsExploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures
Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2017) Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures. : .
2017Applied Physics LettersRhenium-doped MoS2 films
Hallam, Toby and Monaghan, Scott and Gity, Farzan and Ansari, Lida and Schmidt, Michael and Downing, Clive and Cullen, Conor P and Nicolosi, Valeria and Hurley, Paul K and Duesberg, Georg S (2017) Rhenium-doped MoS2 films. : .
2017Microelectronic EngineeringSpatial analysis of failure sites in large area MIM capacitors using wavelets
Mu~noz-Gorriz, J and Monaghan, Scott and Cherkaoui, Karim and Su~n'e (2017) Spatial analysis of failure sites in large area MIM capacitors using wavelets. : .
2017Materials Science in Semiconductor ProcessingPhysical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system
Byrne, Conor and Brennan, B and Lundy, R and Bogan, J and Brady, A and Gomeniuk, YY and Monaghan, S and Hurley, PK and Hughes, G (2017) Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system. : .
2017Applied Physics LettersInversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration
O'Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and Sheehan, Brendan and Povey, Ian M and Hurley, Paul K (2017) Inversion in the In0. 53Ga0. 47As metal-oxide-semiconductor system: Impact of the In0. 53Ga0. 47As doping concentration. : .
2017Microelectronic EngineeringExamining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, B. Sheehan, and P. K. Hurley (2017) Examining the Relationship Between Capacitance-Voltage Hysteresis and Accumulation Frequency Dispersion in InGaAs Metal-Oxide-Semiconductor Structures Based on the Response to Post-Metal Annealing. : . [Details]
2017Applied Physics LettersThe Impact of Forming Gas Annealing on the Electrical Characteristics of Sulfur Passivated Al2O3/In0.53Ga0.47As (110) Metal-Oxide-Semiconductor Capacitors
Y.-C. Fu, U. Peralagu, D. A. J. Millar, J. Lin, I. Povey, X. Li, S. Monaghan, R. Droopad, P. K. Hurley, and I. G. Thayne (2017) The Impact of Forming Gas Annealing on the Electrical Characteristics of Sulfur Passivated Al2O3/In0.53Ga0.47As (110) Metal-Oxide-Semiconductor Capacitors. : . [Details]
2016AIP AdvancesBack-gated Nb-doped MoS2 junctionless field-effect-transistors
Mirabelli, Gioele and Schmidt, Michael and Sheehan, Brendan and Cherkaoui, Karim and Monaghan, Scott and Povey, Ian and McCarthy, Melissa and Bell, Alan P and Nagle, Roger and Crupi, Felice and others (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : .
2016Journal of Applied PhysicsAir sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Mirabelli, Gioele and McGeough, Conor and Schmidt, Michael and McCarthy, Eoin K and Monaghan, Scott and Povey, Ian M and McCarthy, Melissa and Gity, Farzan and Nagle, Roger and Hughes, Greg and others (2016) Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2. : .
2015Microelectronic EngineeringA study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system
Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian and O’Connor, 'Eamon and Sheehan, Brendan and Hurley, Paul (2015) A study of capacitance--voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system. : .
2015Microelectronic EngineeringElectrical characterisation of InGaAs on insulator structures
Cherkaoui, K and Gomeniuk, YY and Daix, N and O’Brien, J and Blake, A and Thomas, KK and Pelucchi, E and O’Connell, D and Sheehan, B and Monaghan, S and others (2015) Electrical characterisation of InGaAs on insulator structures. : .
2015Microelectronic EngineeringEffect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors
O’Connor, 'E and Cherkaoui, K and Monaghan, S and Sheehan, B and Povey, IM and Hurley, PK (2015) Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0. 53Ga0. 47As MOS capacitors. : .
2015Microelectronic EngineeringA Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2015) A Study of Capacitance–Voltage Hysteresis in the HfO2/InGaAs Metal-Oxide-Semiconductor System. : . [Details]
2014Journal Of Vacuum Science & Technology A: Vacuum, Surfaces, And FilmsHigh aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition
Burke, Micheal; Blake, Alan; Djara, Vladimir; O'Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J. (2014) High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition. : . [Details]
2014IEEE Transactions on Device and Materials ReliabilityFailure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions
Mas, Xavier Saura and Monaghan, Scott and Hurley, Paul K and Su~n'e (2014) Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions. : .
2014IEEE Transactions on Electron DevicesCapacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions
Monaghan, Scott and O’Connor, 'Eamon and Rios, Rafael and Ferdousi, Fahmida and Floyd, Liam and Ryan, Eimear and Cherkaoui, Karim and Povey, Ian M and Kuhn, Kelin J and Hurley, Paul K (2014) Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions. : .
2014Thin solid filmsStructural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs
Bennett, NS and Cherkaoui, K and Wong, CS and O'Connor, 'E and Monaghan, S and Hurley, P and Chauhan, L and McNally, PJ (2014) Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs. : .
2014ECS TransactionsCharge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures
Igor Petrovitch Tyagulskyy, Stanislav Igorovitch Tiagulskyi, Aleksey Nickolaevitch Nazarov, Vladimir Sergeevitch Lysenko, P. K. Hurley, K. Cherkaoui and S. Monaghan (2014) Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures. : . [Details]
2014Applied Physics LettersDiffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
Cabrera, W and Brennan, B and Dong, H and O'Regan, Terrance P and Povey, Ian M and Monaghan, Scott and O'Connor, 'Eamon and Hurley, Paul K and Wallace, RM and Chabal, YJ (2014) Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing. : .
2013ECS TransactionsElectrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, 'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : .
2013Journal of Applied PhysicsAn Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors
J. Lin, Y. Y. Gomeniuk, S. Monaghan, I. M. Povey, K. Cherkaoui, É. O'Connor, M. Power, and P. K. Hurley (2013) An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors. : .
2013IEEE Transactions on Device and Materials ReliabilityThe Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
P. K. Hurley, É. O’Connor, V. Djara, S. Monaghan, I. M. Povey, R. D. Long, B. Sheehan, J. Lin, P. C. McIntyre, B. Brennan, R. M. Wallace, M. E. Pemble, and K. Cherkaoui (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
Lin, Jun and Gomeniuk, Yuri Y and Monaghan, Scott and Povey, Ian M and Cherkaoui, Karim and O'Connor, 'Eamon and Power, Maire and Hurley, Paul K (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors. : .
2013Microelectronic engineeringElectrically active interface defects in the In0. 53Ga0. 47As MOS system
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, 'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In0. 53Ga0. 47As MOS system. : .
2013Journal of Vacuum Science & Technology BNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, Enrique and Jim'enez, David and Su~n'e (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : .
2013Journal of Applied PhysicsAnalysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
Saura, X and Su~n'e (2013) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. : .
2013Journal of Vacuum Science & Technology BEffects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors
Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and Sheehan, Brendan J and Cherkaoui, Karim and Hutchinson, Barry JA and Hurley, Paul K and Ferdousi, Fahmida and Rios, Rafael and Kuhn, Kelin J and others (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0. 53Ga0. 47As capacitors. : .
2012Electronics LettersORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity
Monaghan, S and Povey, IM (2012) ORGANIC AND INORGANIC CIRCUITS AND DEVICES-Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity. : .
2012IEEE transactions on electron devicesImpact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
Djara, Vladimir and Cherkaoui, Karim and Schmidt, Michael and Monaghan, Scott and O'Connor, 'Eamon and Povey, Ian M and O'Connell, Dan and Pemble, Martyn E and Hurley, Paul K (2012) Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric. : .
2012Microelectronic engineeringThe structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
Toomey, B and Cherkaoui, K and Monaghan, S and Djara, V and O’Connor, 'E and O’Connell, D and Oberbeck, L and Tois, E and Blomberg, T and Newcomb, SB and others (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : .
2012Journal of Applied PhysicsObservation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
O’Connor, 'Eamon and Cherkaoui, Karim and Monaghan, Scott and O’Connell, D and Povey, I and Casey, P and Newcomb, Simon B and Gomeniuk, Yuri Y and Provenzano, G and Crupi, Felice and others (2012) Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. : .
2012Journal of the Electrochemical SocietyErratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)]
Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)]. : .
2012ECS TransactionsCan Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics?
K. Cherkaoui, V. Djara, É. O’Connor, J. Lin, M. A. Negara, I. M. Povey, S. Monaghan, and P. K. Hurley (2012) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics?. : . [Details]
2011Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and PhenomenaElectrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer
Monaghan, S and O’Mahony, A and Cherkaoui, K and O’Connor, 'E and Povey, IM and Nolan, MG and O’Connell, D and Pemble, ME and Hurley, PK and Provenzano, G and others (2011) Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer. : .
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment
O’Connor, 'Eamon and Monaghan, Scott and Cherkaoui, Karim and Povey, Ian M and Hurley, Paul K (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment. : .
2011ECS TransactionsCapacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : .
2011Journal of Applied PhysicsA systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers
O’Connor, 'Eamon and Brennan, B and Djara, Vladimir and Cherkaoui, Karim and Monaghan, Scott and Newcomb, Simon B and Contreras, R and Milojevic, M and Hughes, Gregory and Pemble, Martyn E and others (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers. : .
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M. and Monaghan, S. and Povey, I.M. and Cherkaoui, K. and Hurley, P.K. and Androulidaki, M. (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details]
2011Journal of The Electrochemical SocietyCharged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors
Long, RD and Shin, B and Monaghan, S and Cherkaoui, K and Cagnon, J and Stemmer, S and McIntyre, PC and Hurley, PK (2011) Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors. : .
2011Microelectronic EngineeringTransport and interface states in high-$kappa$ LaSiOx dielectric
Gomeniuk, YY and Gomeniuk, YV and Tyagulskii, IP and Tyagulskii, SI and Nazarov, AN and Lysenko, VS and Cherkaoui, K and Monaghan, S and Hurley, PK (2011) Transport and interface states in high-$kappa$ LaSiOx dielectric. : .
2011Nanoscale research lettersFabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
Benedicto, Marcos and Galiana, Beatriz and Molina-Aldareguia, Jon M and Monaghan, Scott and Hurley, Paul K and Cherkaoui, Karim and Vazquez, Luis and Tejedor, Paloma (2011) Fabrication of HfO 2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application. : .
2011Microelectronic EngineeringMulti-technique characterisation of MOVPE-grown GaAs on Si
Wong, Chiu Soon; Bennett, Nick S.; McNally, Patrick J.; Galiana, B.; Tejedor, P.; Benedicto, M.; Molina-Aldareguia, J. M.; Monaghan, Scott; Hurley, Paul K.; Cherkaoui, Karim (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . [Details]
2010ECS Transactions(NH4) 2S Passivation of High-k/In0. 53Ga0. 47As Interfaces: A Systematic Study of (NH4) 2S Concentration
Eamon O'Connor, Barry Brennan, Rocio Contreras, Marko Milojevic, Karim Cherkaoui, Scott Monaghan, S. B. Newcomb, Martyn E. Pemble, Greg Hughes, Robert M. Wallace and Paul K. Hurley (2010) (NH4) 2S Passivation of High-k/In0. 53Ga0. 47As Interfaces: A Systematic Study of (NH4) 2S Concentration. : . [Details]
2010ECS TransactionsEquivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system
Hurley, Paul K and Long, Rathnait and O'Regan, Terrance and O'Connor, Eamon and Monaghan, Scott and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system. : .
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer
O’Mahony, Aileen and Monaghan, Scott and Provenzano, G and Povey, Ian M and Nolan, MG and O’Connor, 'Eamon and Cherkaoui, Karim and Newcomb, Simon B and Crupi, Felice and Hurley, Paul K and others (2010) Structural and electrical analysis of the atomic layer deposition of HfO 2/n-In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer. : .
2010ECS TransactionsInvestigation of High-$kappa$/InxGa1-xAs Interfaces
Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait D and Djara, Vladimir and O'Mahony, A and Nagle, R and Pemble, Martyn E and Hurley, Paul K (2010) Investigation of High-$kappa$/InxGa1-xAs Interfaces. : .
2010ECS TransactionsStructural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and O'Connell, Dan and others (2010) Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO2/InxGa1-xAs (M=Hf| Zr, x=0| 0.53) Gate Stacks. : .
2010ECS TransactionsElectrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition
Gomeniuk, Yuri Y and Gomeniuk, Yuri V and Nazarov, Alexei N and Hurley, Paul K and Cherkaoui, Karim and Monaghan, Scott and Gottlob, Heiner and Schmidt, Mathias and Schubert, J"urgen and Lopes, J Marcelo J and others (2010) Electrical Properties of LaLuO3/Si (100) Structures Prepared by Molecular Beam Deposition. : .
2009Applied physics lettersElectrical characterization of the soft breakdown failure mode in MgO layers
Miranda, Enrique and O’Connor, E and Cherkaoui, Karim and Monaghan, Scott and Long, R and O’Connell, Deborah and Hurley, Paul K and Hughes, Greg and Casey, Patrick (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : .
2009Microelectronic engineeringDegradation dynamics and breakdown of MgO gate oxides
Miranda, E and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O’Connell, D and Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. : .
2009Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and PhenomenaLeakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
Lu, Y and Hall, S and Tan, LZ and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and others (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. : .
2009Microelectronics ReliabilityEffects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Miranda, Enrique and Mart'in-Mart'inez, Javier and O’Connor, E and Hughes, G and Casey, P and Cherkaoui, Karim and Monaghan, S and Long, R and O’Connell, D and Hurley, Paul K (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : .
2009IEEE electron device letters$$backslash$hbox $$TiN/ZrO$$ _ $$2$$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$backslash$hbox $$ZrO$$ _ $$2$$ $ for DRAM Applications
Monaghan, S and Cherkaoui, K and O'connor, E and Djara, V and Hurley, PK and Oberbeck, L and Tois, E and Wilde, L and Teichert, S (2009) $$backslash$hbox $$TiN/ZrO$$ _ $$2$$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$backslash$hbox $$ZrO$$ _ $$2$$ $ for DRAM Applications. : .
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition
Long, Rathnait D and O’Connor, 'Eamon and Newcomb, Simon B and Monaghan, Scott and Cherkaoui, Karim and Casey, P and Hughes, Gregory and Thomas, Kevin K and Chalvet, F and Povey, Ian M and others (2009) Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition. : .
2009Solid-State ElectronicsDetermination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : .
2009Applied Physics LettersTemperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods
O’Connor, 'Eamon and Monaghan, Scott and Long, Rathnait D and O’Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn E and Brammertz, Guy and Heyns, Marc and Newcomb, Simon B and others (2009) Temperature and frequency dependent electrical characterization of HfO 2/In x Ga 1- x As interfaces using capacitance-voltage and conductance methods. : .
2009ECS TransactionsEffects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Miranda, Enrique and O'Connor, Eamon and Hughs, Greg and Casey, Patrick and Cherkaoui, Karim and Monaghan, Scott and Long, Rathnait and O'Connell, Dan and Hurley, Paul (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : .
2009ECS TransactionsStructural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
Paul K. Hurley, Eamon O'Connor, Scott Monaghan, Rathnait Long, Aileen O'Mahony, Ian M. Povey, Karim Cherkaoui, John MacHale, Aidan Quinn, Guy Brammertz, Marc M. Heyns, Simon Newcomb, Valeri V. Afanas'ev, Arif Sonnet, Rohit Galatage, Naqi Jivani, Eric Vogel, Robert M. Wallace and Martyn Pemble (2009) Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53). : . [Details]
2008Journal of Applied PhysicsElectrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation
Cherkaoui, Karim and Monaghan, Scott and Negara, Muhammad A and Modreanu, Mircea and Hurley, Paul K and O’Connell, Dan and McDonnell, Stephen and Hughes, Gregory and Wright, S and Barklie, RC and others (2008) Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation. : .
2007Applied physics lettersStress in silicon interlayers at the Si O x/ Ge interface
O’Callaghan, Sean and Monaghan, Scott and Elliott, Simon D and Greer, James C (2007) Stress in silicon interlayers at the Si O x/ Ge interface. : .
2007Physical Review BAtomic scale model interfaces between high-k hafnium silicates and silicon
Monaghan, S and Greer, JC and Elliott, SD (2007) Atomic scale model interfaces between high-k hafnium silicates and silicon. : .
2006Journal of computer-aided materials designQuantum mechanics at the core of multi-scale simulations
Bartlett, Rodney J and McClellan, Josh and Greer, JC and Monaghan, Scott (2006) Quantum mechanics at the core of multi-scale simulations. : .
2005Journal of applied physicsThermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale
Monaghan, Scott and Greer, James C and Elliott, Simon D (2005) Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale. : .

Conference Publications

YearPublication
2022Electrochemical Society Meeting Abstracts 241
Karim Cherkaoui, Enrico Caruso, Jun Lin, Scott Monaghan, Andrea Padovani, Luca Larcher, Paul Hurley (2022) Electrochemical Society Meeting Abstracts 241. : . [Details]
20212021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P. K. Hurley and E. Miranda (2021) 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). : . [Details]
20217th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021)
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. K. Hurley (2021) 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021). : .
2021ECS Meeting Abstracts - IOP Science Publishing
Jun Lin, Scott Monaghan, Neha Sakhuja, Farzan Gity, Ravindra Kumar Jha, Emma Coleman, James Connolly, Conor Cullen, Lee Walsh, Teresa Mannarino, Michael Schmidt, Brendan Sheehan, Georg Duesberg, Niall Mc Evoy, Navakanta Bhat, Paul Hurley, Ian Povey, Shubhadeep Bhattacharjee (2021) ECS Meeting Abstracts - IOP Science Publishing. : . [Details]
2020ECS Meeting Abstracts
Walsh, Lee and Ansari, Lida and Monaghan, Scott and Zhussupbekov, Kuanysh and Zhussupbekova, Ainur and Coile'ain, Cormac 'O and McEvoy, Niall and Shvets, Igor V and Barton, Adam T and Hinkle, Christopher and others (2020) ECS Meeting Abstracts. : .
20192019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Caruso, Enrico and Lin, Jun and Monaghan, Scott and Cherkaoui, Karim and Floyd, Liam and Gity, Farzan and Palestri, Pierpaolo and Esseni, David and Selmi, Luca and Hurley, Paul K (2019) 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). : .
2018Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestri, P. Hurley, and L. Selmi (2018) Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). : . [Details]
2018ECS Meeting Abstracts
Ryan, Louise P and Walsh, Adrian and McCarthy, Melissa M and Monaghan, Scott and Modreanu, M and Romanitan, Cosmin and Chaix-Pluchery, Odette and O'Brien, S and Pemble, Martyn E and Povey, Ian M (2018) ECS Meeting Abstracts. : .
2018ECS Meeting Abstracts
Coleman, Emma and Monaghan, Scott and Gity, Farzan and Schmidt, Michael and Connolly, James and Lin, Jun and Walsh, Lee and Cherkaoui, Karim and O'Neill, Katie and McEvoy, Niall and others (2018) ECS Meeting Abstracts. : .
20172017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
Torchia, Pasqualino and Pampili, Pietro and O'Connell, John and O'Brien, Joe and White, Mary and Schmidt, Michael and Sheehan, Brendan and Waldron, Finbarr and Holmes, Justin D and Monaghan, Scott and others (2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS). : .
20172017 47th European Solid-State Device Research Conference (ESSDERC)
Mirabelli, Gioele and Gity, Farzan and Monaghan, Scott and Hurley, Paul K and Duffy, Ray (2017) 2017 47th European Solid-State Device Research Conference (ESSDERC). : .
2017ECS Meeting Abstracts
P. K. Hurley, Scott Monaghan, Eamon O'Connor, Enrico Caruso, Karim Cherkaoui, Liam Floyd, Ian M Povey, David Alan John Millar, Uthayasankaran Peralagu and Iain G Thayne (2017) ECS Meeting Abstracts. : . [Details]
20172017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Monaghan, Scott and Gity, Farzan and Duffy, Ray and Mirabelli, Gioele and McCarthy, Melissa and Cherkaoui, Karim and Povey, Ian M and Nagle, Roger E and Hurley, Paul K and Lindemuth, Jeffrey R and others (2017) 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). : .
20172017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)
Gity, Farzan and Ansari, Lida and Monaghan, Scott and Mirabelli, Gioele and Torchia, Pasqualino and Hydes, Alan and Schmidt, Michael and Sheehan, Brendan and McEvoy, Niall and Hallam, Toby and others (2017) 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC). : .
2016ECS Meeting Abstracts
Mirabelli, Gioele and Duffy, Ray and Hurley, PK and Monaghan, Scott and Cherkaoui, Karim and Schmidt, Michael and Sheehan, Brendan and Povey, Ian M and McCarthy, Melissa and Nagle, Roger and others (2016) ECS Meeting Abstracts. : .
2015ECS Meeting Abstracts
Hurley, PK and Gomeniuk, Yuri and Lin, Jun and Monaghan, Scott and Povey, Ian M and Pemble, Martyn E and Hutchinson, BJ and Sheehan, Brendan and Djara, Vladimir and O'Connor, Eamon and others (2015) ECS Meeting Abstracts. : .
201511th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Y.-C. Fu, U. Peralagu, O. Ignatova, X. Li, R. Droopad, I. Thayne, J. Lin, I. Povey, S. Monaghan, and P. Hurley (2015) 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME). : . [Details]
20142014 IEEE International Integrated Reliability Workshop Final Report (IIRW
J. Lin, S. Monaghan, K. Cherkaoui, I. M. Povey, É. O’Connor, B. Sheehan, and P. K. Hurley (2014) 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW. : . [Details]
20122012 13th International Conference on Ultimate Integration on Silicon (ULIS)
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, 'E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) 2012 13th International Conference on Ultimate Integration on Silicon (ULIS). : .
2012ECS Meeting Abstracts
Cherkaoui, Karim and Djara, Vladimir and O'Connor, Eamon and Lin, Jun and Negara, Muhammad A and Povey, Ian M and Monaghan, Scott and Hurley, Paul K (2012) ECS Meeting Abstracts. : .
20122012 28th International Conference on Microelectronics Proceedings
Miranda, E and Jim'enez, D and Su~n'e (2012) 2012 28th International Conference on Microelectronics Proceedings. : .
2011Advanced Materials Research
Gomeniuk, YY and Gomeniuk, YV and Nazarov, A and Hurley, PK and Cherkaoui, Karim and Monaghan, Scott and Hellstr"om, Per Erik and Gottlob, HDB and Schubert, J and Lopes, JMJ (2011) Advanced Materials Research. : .
2011ECS Meeting Abstracts
O'Connor, Eamon and Djara, Vladimir and Monaghan, Scott and Hurley, Paul and Cherkaoui, Karim (2011) ECS Meeting Abstracts. : .
2010ECS Meeting Abstracts
Hurley, Paul K and O'Connor, Eamon and O'Regan, Terrance and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Negara, M Adi and O'Mahony, Aileen and Povey, Ian and Blake, Alan and others (2010) ECS Meeting Abstracts. : .
2010ECS Meeting Abstracts
O'Mahony, Aileen and Monaghan, Scott and Chiodo, Rosario and Povey, Ian and Blake, Alan and Cherkaoui, Karim and Nagle, Roger and O'Connor, Eamon and Long, Rathnait and Djara, Vladimir and others (2010) ECS Meeting Abstracts. : .
2010ECS Meeting Abstracts
Cherkaoui, Karim and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and Djara, Vladimir and Hurley, Paul K (2010) ECS Meeting Abstracts. : .
20092009 IEEE International Reliability Physics Symposium
Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) 2009 IEEE International Reliability Physics Symposium. : .
2009ECS Meeting Abstracts
Hurley, Paul K and O'Connor, Eamon and Monaghan, Scott and Long, Rathnait and O'Mahony, Aileen and Povey, Ian M and Cherkaoui, Karim and Pemble, Martyn and MacHale, John and Quinn, Aidan and others (2009) ECS Meeting Abstracts. : .
20092009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Miranda, E and O'Connor, E and Hughes, G and Casey, P and Cherkaoui, K and Monaghan, S and Long, R and O'Connell, D and Hurley, PK (2009) 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. : .
20082008 9th International Conference on Ultimate Integration of Silicon
Monaghan, S and Hurley, PK and Cherkaoui, K and Negara, MA and Schenk, A (2008) 2008 9th International Conference on Ultimate Integration of Silicon. : .
2008WODIM, Berlin, June 2008
Lu, Y and Hall, S and Mitrovic, IZ and Davey, WM and Raeissi, Bahman and Engstr"om, Olof and Cherkaoui, K and Monaghan, S and Hurley, PK and Gottlob, HDB and others (2008) WODIM, Berlin, June 2008. : .
2008Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA
O'Connor, E and Long, RD and Monaghan, S and Brammertz, Guy and Cherkaoui, K and O'Mahony, A and Povey, IM and Pemble, ME and Heyns, Marc and Afanas' ev, Valeri and others (2008) Semiconductor Interface Specialists Conference, Date: 2008/12/11-2008/12/11, Location: San Diego, CA USA. : .
20027th Irish Atomistic Simulators Meeting Trinity College Dublin
Monaghan, Scott and Elliott, Simon and Greer, Jim (2002) 7th Irish Atomistic Simulators Meeting Trinity College Dublin. : .
20027th Irish Atomistic Simulators Meeting Trinity College Dublin
Greer, Jim and Larsson, Andreas and Delaney, Paul and Elliott, Simon and Nolan, Mick and Monaghan, Scott and Pinto, Henry and Cheng, Mr and O’Reilly, Eoin and Pereira, Mauro and others (2002) 7th Irish Atomistic Simulators Meeting Trinity College Dublin. : .

Published Reports

YearPublication
2016Single crystal high dielectric constant material and method for making same
Monaghan, Scott and Povey, Ian (2016) Single crystal high dielectric constant material and method for making same. : .
2007First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110)
Monaghan, Scott (2007) First Principles Modelling of Interfacial Systems of High-k Hafnium Silicates on Si (100) and on Si (110). : .
2002High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides
Monaghan, Scott (2002) High-K Gate Dielectris Simulations: Structure and Stability of the Zirconium and Hafnium Pseudo-binary Oxides. : .

Professional Associations

  • IEEE Senior Member

Teaching Interests

My teaching interests are in Physics, Chemistry, Mathematics and Nano-electronics.

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