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Leader in Integrated ICT Hardware & Systems

Vitaly Zubialevich -

  • Photonics

Education, qualification

06.2010           Candidate of physico-mathematical sciences (PhD) thesis: Optically pumped lasers based on GaN epitaxial layers and InGaN/GaN quantum well heterostructures on Si(111)‑substrates (Stepanov Institute of Physics, NAS of Belarus)
2000-2003       Post-graduate courses at Researchers Training Institute of National Academy of Sciences of Belarus
Relevant modulus include: Laser physics (specialization)*, Computer science*, Philosophy*, English*, Belarusian. * – candidate’s exam passed.
1995-2000       Belarusian State University, physics department      
Distinction diploma. Specialty: physicist, specialization: physicist, teacher of physics and computer sciences.        
Relevant modulus include: Higher mathematics (mathematical analysis, analytical geometry, differential equation, bases of vector and tensor analysis, probability theory and mathematical statistics), General physics (mechanics, molecular physics, electricity and magnetism, atomic and nuclear physics, optics), Mathematical physics, Thermodynamics and statistical physics, Electrodynamics, Theoretical mechanics, Quantum mechanics, Bases of relativity theory, Astronomy, Computer sciences (Bases of assembler, Pascal (Delphi), Gupta SQLWindows), Methods of teaching of physics, Methods of teaching of computer sciences, General courses (Philosophy, History, Pedagogy, Economics, English etc. )

Work experience

11.2011-to date   Researcher at Tyndall National Institute, UCC
08.2003-11.2011   Junior scientist at Stepanov Institute of Physics of NAS of Belarus
08-11.2000            Probationer-researcher at Stepanov Institute of Physics of NAS of Belarus
1998-2000            Term paper and diploma thesis practices (student member) at Stepanov Institute of Physics of NAS of Belarus

I am specialised in MOCVD growth (10+ years of experience), optical (20+ years) and structural (10+ years) characterisation and device fabrication of III-Nitride materials (InAlGaN). My PhD study was on radiative recombination and optical gain mechanisms in GaN epitaxial layers and InGaN/GaN QWs grown on silicon for which lasing at optical excitation was demonstrated for the first time. My post PhD experience included InAlN-based near UV LEDs, 250 nm AlGaN-based DUV LEDs, GaN nanocolumn-based Shottky diodes, AlN templates by nanopatterning and regrowth. In recent years, my main focus is on a novel fabrication approach for arrays of GaN nanocolumn- and GaN µ-pyramid-based µ-LEDs to be used as pixels in µ-displays for mixed and virtual reality applications.

Research Grants

Funder Start Date End Date Title Role
Science Foundation of Ireland 01-JAN-18 30-APR-19 transparent AlN templates on foreign substrates by means of coalescence of nanoscale structures Principal Investigator
Enterprise Irl 31-JAN-20 31-OCT-20 GaN–InGaN core–shell nanopillars with advanced band-bending engineering for Principal Investigator
Miscellaneous 01-NOV-20 31-DEC-22 Tyndall Internal Catalyst Award_ICA_2021_Zhi Le Principal Investigator
Enterprise Irl 17-JUL-21 30-APR-24 GaN‒InGaN core‒shell nanoumbrella-based µ-LEDs for microdisplay applications Principal Investigator

Research Collaborators

Company Country Name
Peter Parbrook
Tyndall National Institute IRELAND Pietro Pampili

Book Chapters

YearPublication
2004Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures
Yablonskii, GP and Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Anufryk, AS and Dikme, Y and Kalisch, H and Jansen, RH and Schineller, B and others (2004) Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures. : Springer Netherlands. [Details]
2004Stimulated Emission and Gain in GaN Epilayers Grown on Si
Gurskii, AL and Lutsenko, EV and Zubialevich, VZ and Pavlovskii, VN and Yablonskii, GP and Kazlauskas, K and Tamulaitis, G and Jursenas, S and Zukauskas, A and Dikme, Y and others (2004) Stimulated Emission and Gain in GaN Epilayers Grown on Si. : Springer Netherlands. [Details]

Peer Reviewed Journals

YearJournalPublication
2022CarbonStrain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering
Kierdaszuk, J;Dabrowski, P;Rogala, M;Krukowski, P;Przewloka, A;Krajewska, A;Kaszub, W;Sobanska, M;Zytkiewicz, ZR;Zubialevich, VZ;Kowalczyk, PJ;Wysmolek, A;Binder, J;Drabinska, A (2022) Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
2021Journal of Physics D: Applied PhysicsA systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Spasevski, L;Kusch, G;Pampili, P;Zubialevich, VZ;Dinh, DV;Bruckbauer, J;Edwards, PR;Parbrook, PJ;Martin, RW (2021) A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content. : IOP PUBLISHING LTD. [Details]
2021Langmuir JournalTailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition
Mena, J;Carvajal, JJ;Zubialevich, V;Parbrook, PJ;Diaz, F;Aguilo, M (2021) Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition. : AMER CHEMICAL SOC. [Details]
2020Applied Physics LettersCarrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells
Finot, Sylvain; Grenier, Vincent; Zubialevich, Vitaly; Bougerol, Catherine; Pampili, Pietro; Eymery, Joël; Parbrook, Peter J.; Durand, Christophe; Jacopin, Gwénolé (2020) Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells. : . [Details]
2020ECS TransactionsPhotoconductive Solution Processed ZnO Quasi-superlattice Films
Buckley, D., Inguva, S., McNulty, D., Zubialevich, V. Z., Parbrook, P. J., Gity, F., Hurley, P. & O'Dwyer, C. (2020) Photoconductive Solution Processed ZnO Quasi-superlattice Films. : .
2020Scientific ReportsBandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges
Alam, SN;Zubialevich, VZ;Ghafary, B;Parbrook, PJ (2020) Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges. : NATURE RESEARCH. [Details]
2020Journal of Applied PhysicsReduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD
Zubialevich, Vitaly Z.; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J. (2020) Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD. : . [Details]
2020Physica Status Solidi (A)Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy
Rzheutski, Mikalai V.; Lutsenko, Evgenii V.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Nahorny, Aliaksei V.; Yablonskii, Gennadii P.; Zubialevich, Vitaly Z.; Petrov, Stanislav I.; Alexeev, Alexey N.; Nechaev, Dmitrii V.; Jmerik, Valentin N. (2020) Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy. : . [Details]
2020Crystal Growth & DesignThermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy
Zubialevich V.Z.;Pampili P.;Parbrook P.J. (2020) Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy. : . [Details]
2019Japanese Journal of Applied PhysicsInAlN-based LEDs emitting in the near-UV region
Pampili P.;Zubialevich V.;Maaskant P.;Akhter M.;Corbett B.;Parbrook P. (2019) InAlN-based LEDs emitting in the near-UV region. : . [Details]
2019Japanese Journal of Applied PhysicsAlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy
Alyamani, Ahmed; Lutsenko, Evgenii V.; Rzheutski, Mikalai V.; Zubialevich, Vitaly Z.; Vainilovich, Aliaksei G.; Svitsiankou, Illia E.; Shulenkova, Varvara A.; Yablonskii, Gennadii P.; Petrov, Stanislav I.; Alexeev, Alexey N. (2019) AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy. : . [Details]
2018Journal of Physics D: Applied PhysicsSignificant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN
Pampili, Pietro; Dinh, Duc V.; Zubialevich, Vitaly Z.; Parbrook, Peter J. (2018) Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN. : . [Details]
2018Journal of LuminescenceInxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter
Zubialevich, VZ; Rzheutski, MV; Li, HN; Sadler, TC; Alam, SN; Bhardwaj, V; Lutsenko, EV; Yablonskii, GP; Parbrook, PJ (2018) InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter. : . [Details]
2018Physica Status Solidi (B)Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor
Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (2018) Fast Growth of Smooth AlN in a 3 x 2 Showerhead-Type Vertical Flow MOVPE Reactor. : . [Details]
2018Acs Applied Materials & InterfacesEffect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays
Kegel, Jan; Zubialevich, Vitaly Z.; Schmidt, Michael; Povey, Ian M.; Pemble, Martyn E. (2018) Effect of Surface and Defect Chemistry on the Photo-catalytic Properties of Intentionally Defect-rich ZnO Nanorod Arrays. : . [Details]
2017Physica Status Solidi A-Applications and Materials ScienceNanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation
Smith, MD;Thomson, D;Zubialevich, VZ;Li, H;Naresh-Kumar, G;Trager-Cowan, C;Parbrook, PJ (2017) Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation. : WILEY-V C H VERLAG GMBH. [Details]
2017IEEE Transactions On Electron DevicesGaN nanowire Schottky barrier diodes
Sabui, Gourab; Zubialevich, Vitaly Z.; White, Mary; Pampili, Pietro; Parbrook, Peter J.; McLaren, Mathew; Arredondo-Arechavala, Miryam; Shen, Z. John (2017) GaN nanowire Schottky barrier diodes. : . [Details]
2017ECS TransactionsOptical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films
Buckley, D., McCormack, R., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) Optical Reflectivity of Spin-Coated Multilayered ZnO and Al:ZnO Thin Films. : . [Details]
2017ECS TransactionsHighly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors
Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors. : . [Details]
2017NanotechnologyOptical and structural characterisation of epitaxial nanoporous GaN grown by CVD
Mena, J.; Carvajal, J. J.; Martínez, O.; Jiménez, J.; Zubialevich, Vitaly, Z.; Parbrook, Peter, J.; Diaz, F.; Aguiló, M. (2017) Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD. : .
2017NanotechnologyAg colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well
Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise (2017) Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well. : . [Details]
2017Journal of Vacuum Science & Technology ASolution processed ZnO homogeneous quasisuperlattice materials
Buckley, D., McNulty, D., Zubialevich, V. Z., Parbrook, P. J. & O'Dwyer, C. (2017) Solution processed ZnO homogeneous quasisuperlattice materials. : . [Details]
2016Semiconductor Science and TechnologyStrongly nonparabolic variation of the band gap in InxAl1-xN with low indium content
Zubialevich, VZ,Dinh, DV,Alam, SN,Schulz, S,O'Reilly, EP,Parbrook, PJ (2016) Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content. : . [Details]
2016Journal of Physics D: Applied PhysicsComposition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells
Zubialevich, VZ;Alam, SN;Li, HN;Parbrook, PJ (2016) Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells. : IOP PUBLISHING LTD. [Details]
2016ACS NanoUltra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach
Conroy, Michele,Zubialevich, Vitaly Z.,Li, Haoning,Petkov, Nikolay,O’Donoghue, Sally,Holmes, Justin D.,Parbrook, Peter J. (2016) Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach. : . [Details]
2015ECS TransactionsFully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs
Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V., Parbrook, P., Geaney, H., O'Dwyer, C., Díaz, F. & Aguiló, M. (2015) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs. : . [Details]
2015Electronics LettersOver 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs
Akhter, M,Pampili, P,Zubialevich, VZ,Eason, C,Quan, ZH,Maaskant, PP,Parbrook, PJ,Corbett, B (2015) Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs. : . [Details]
2015Electronic LettersOver 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs
Akhter, M. Pampili, P. ; Zubialevich, V.Z. ; Eason, C. ; Quan, Z.H. ; Maaskant, P.P. ; Parbrook, P.J. ; Corbett, B. (2015) Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs. : . [Details]
2015Journal of Crystal GrowthSingle phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy
Dinh, D. V.; Conroy, M.; Zubialevich, V. Z.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy. : . [Details]
2015Journal of Materials Chemistry CEpitaxial lateral overgrowth of AlN on self-assembled patterned nanorods
Conroy, M.; Zubialevich, V. Z.; Li, H.; Petkov, N.; Holmes, J. D.; Parbrook, P. J. (2015) Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. : . [Details]
2015Journal of Materials Chemistry CEpitaxial lateral overgrowth of AlN on self-assembled patterned nanorods
Conroy, M;Zubialevich, VZ;Li, HN;Petkov, N;Holmes, JD;Parbrook, PJ (2015) Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. : ROYAL SOC CHEMISTRY. [Details]
2014LuminescenceEnhanced UV luminescence from InAlN quantum well structures using two temperature growth
Zubialevich, VZ;Sadler, TC;Dinh, DV;Alam, SN;Li, HN;Pampili, P;Parbrook, PJ (2014) Enhanced UV luminescence from InAlN quantum well structures using two temperature growth. : ELSEVIER SCIENCE BV. [Details]
2014Journal of Applied PhysicsComparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy
Dinh, DV;Oehler, F;Zubialevich, VZ;Kappers, MJ;Alam, SN;Caliebe, M;Scholtz, F;Humphreys, CJ;Parbrook, PJ (2014) Comparative study of polar and semipolar (11(2)over-bar2) InGaN layers grown by metalorganic vapour phase epitaxy. : AMER INST PHYSICS. [Details]
2014Journal of Materials Chemistry CDetermination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD
Smith, MD;Taylor, E;Sadler, TC;Zubialevich, VZ;Lorenz, K;Li, HN;O'Connell, J;Alves, E;Holmes, JD;Martin, RW;Parbrook, PJ (2014) Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. : ROYAL SOC CHEMISTRY. [Details]
2014Journal of Applied PhysicsComparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy
Dinh, Duc V and Oehler, F and Zubialevich, VZ and Kappers, MJ and Alam, SN and Caliebe, M and Scholtz, F and Humphreys, CJ and Parbrook, PJ (2014) Comparative study of polar and semipolar (11-22) InGaN layers grown by metalorganic vapour phase epitaxy. : .
2014Journal of LuminescenceEnhanced UV luminescence from InAlN quantum well structures using two temperature growth
Zubialevich, Vitaly Z and Sadler, Thomas C and Dinh, Duc V and Alam, Shahab N and Li, Haoning and Pampili, Pietro and Parbrook, Peter J (2014) Enhanced UV luminescence from InAlN quantum well structures using two temperature growth. : .
2014Acs Applied Materials & InterfacesFully porous GaN p-n junctions fabricated by chemical vapor deposition.
Bilousov, O. V., Carvajal, J. J., Geaney, H., Zubialevich, V. Z., Parbrook, P. J., Martínez, O., Jiménez, J., Díaz, F., Aguiló, M. & O’Dwyer, C. (2014) Fully porous GaN p-n junctions fabricated by chemical vapor deposition.. : .
2013Applied Physics LettersFabrication of p-type porous GaN on silicon and epitaxial GaN
Bilousov, OV,Geaney, H,Carvajal, JJ,Zubialevich, VZ,Parbrook, PJ,Giguere, A,Drouin, D,Diaz, F,Aguilo, M,O'Dwyer, C (2013) Fabrication of p-type porous GaN on silicon and epitaxial GaN. : . [Details]
2013Physica Status Solidi (C) Current Topics in Solid State Physics Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping
Kachkanov, Vyacheslav and Dolbnya, Igor and O'Donnell, Kevin and Lorenz, Katharina and Pereira, Sergio and Watson, Ian and Sadler, Thomas and Li, Haoning and Zubialevich, Vitaly and Parbrook, Peter (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. : .
2013Physica Status Solidi C - Current Topics In Solid State PhysicsCharacterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping
Kachkanov V.;Dolbnya I.;O'Donnell K.;Lorenz K.;Pereira S.;Watson I.;Sadler T.;Li H.;Zubialevich V.;Parbrook P. (2013) Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping. : . [Details]
2013Applied Physics LettersThe effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures
Smith, MD;Sadler, TC;Li, HN;Zubialevich, VZ;Parbrook, PJ (2013) The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures. : AMER INST PHYSICS. [Details]

Other Journals

YearJournalPublication
2013Journal of Applied SpectroscopyCathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements
Pavlovskii, VN and Zubialevich, VZ and Lutsenko, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Abushov, SA and Tagiev, OB (2013) Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements. : .
2011Doklady BGIUR (in Russian)SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING
NIKANENKA, SV and LUTSENKO, EV and ZUBIALEVICH, VZ and RZHEUTSKII, MV and ZHDANOVSKII, VA and DANILCHYK, AV and YABLONSKII, GP and DLUGUNOVICH, VA (2011) SET-UP FOR THE MEASUREMENT OF SPATIAL DISTRIBUTION OF THE LASER DIODES RADIATION AND THE LUMINOUS INTENSITY OF LEDS AND LED-LIGHTING. : .
2011Journal of Applied SpectroscopyEffect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions
Zubialevich, VZ and Lutsenko, EV and Danilchyk, AV and Muravitskaya, EV and Yablonskii, GP and Pashaev, AM and Tagiev, BG and Tagiev, OB and Abushov, SA (2011) Effect of excitation level on the photoluminescence of barium thiogallate activated with europium and cerium ions. : .
2009Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference, Nanomeeting--2009: Reviews and Short Notes: Minsk, Belarus, 26-29 May 2009OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES
DANILCHYK, AV and LUTSENKO, EV and ZUBIALEVICH, VZ and PAVLOVSKII, VN and YABLONSKII, GP and SCHINELLER, B and HEUKEN, M and DIKME, Y and KHOSHROO, L and KALISCH, H (2009) OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES. : .
2008Journal of Applied SpectroscopyMechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates
Zubialevich, VZ and Lutsenko, EV and Pavlovskii, VN and Gurskii, AL and Danilchyk, AV and Yablonskii, GP and Danailov, MB and Ressel, B and Demidovich, AA and Woitok, JF and others (2008) Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates. : .

Conference Publications

YearPublication
2018 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, M.; Sabui, G.; Shen, Z. J.; Parbrook, Peter J. (2018) 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO). : . [Details]
2017International Symposium on Power Semiconductor Devices and ICs
Sabui G.;Zubialevich V.;White M.;Pampili P.;Parbrook P.;McLaren M.;Arredondo-Arechavala M.;Shen Z. (2017) International Symposium on Power Semiconductor Devices and ICs. : . [Details]
20152015 IEEE Summer Topicals Meeting Series, SUM 2015
Parbrook P.;Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B. (2015) 2015 IEEE Summer Topicals Meeting Series, SUM 2015. : . [Details]
20152015 IEEE Summer Topicals Meeting Series, SUM 2015
Pampili P.;Akhter M.;Eason C.;Zubialevich V.;Maaskant P.;Quan Z.;O'Brien P.;Corbett B.;Parbrook P. (2015) 2015 IEEE Summer Topicals Meeting Series, SUM 2015. : . [Details]
2010Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Pavlovskii, VN and Lutsenko, EV and Danilchyk, AV and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP and Kalisch, H and Jansen, RH and Schineller, B and Heuken, M (2010) Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on. : .
2010The 6th International Conference on Rare Earth Development and Application
ZUBIALEVICH, Vitaly Z and LUTSENKO, Evgenii V and MURAVITSKAYA, Alena V and YABLONSKII, Gennadii P and PASHAYEV, Arif M and TAGIEV, Bahadur G and TAGIEV, Oktay B and ABUSHOV, Seid A (2010) The 6th International Conference on Rare Earth Development and Application. : .
2010Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Lutsenko, EV and Pavlovskii, VN and Danilchyk, AV and Rzheutski, MV and Vainilovich, AG and Zubialevich, VZ and Muravitskaya, AV and Yablonskii, GP (2010) Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on. : .
20097th Belarusian-Russian Workshop "SEMICONDUCTOR LASERS AND SYSTEMS"; Minsk, Belarus; 1-5 June 2009
Pavlovskii, VN and Rzheutski, MV and Lutsenko, EV and Vainilovich, AG and Danilchyk, AV and Zubialevich, VZ and Yablonskii, GP and Behmenburg, H and Mauder, C and Kalisch, H and others (2009) 7th Belarusian-Russian Workshop "SEMICONDUCTOR LASERS AND SYSTEMS"; Minsk, Belarus; 1-5 June 2009. : .
2005Nanomeeting-2005
GURSKII, AL and LUTSENKO, EV and PAVLOVSKII, VN and ZUBIALEVICH, VZ and DANIL'CHIK, AV and OSIPOV, KA and YABLONSKII, GP and SHULENKOV, AS and HRYSHANAU, VA and STOGNIJ, AI and others (2005) Nanomeeting-2005. : .
2003Nanomeeting-2003
YABLONSKII, GP and LUTSENKO, EV and GURSKII, AL and PAVLOVSKI, VN and ZUBIALEVICH, VZ and KALISCH, H and SZYMAKOWSKI, A and DIKME, Y and JANSEN, RH and WOITOK, JF and others (2003) Nanomeeting-2003. : .
2003Compound Semiconductors, 2003. International Symposium on
Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Gurskii, AL and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakowski, A and Kalisch, H and others (2003) Compound Semiconductors, 2003. International Symposium on. : .
2003International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Pavlovskii, Vyacheslav N and Zubialevich, Vitaly Z and Gurskii, Alexander L and Kalisch, Holger and Jansen, Rolf H and Heime, Klaus and Schineller, Bernd and Heuken, Michael (2003) International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems. : .
2003International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems
Schineller, Bernd and Protzmann, Harry and Luenenbuerger, Markus and Gerstenbrandt, Georg and Heuken, Michael and Lutsenko, Evgenii V and Zubialevich, Vitaly Z and Pavlovskii, Vyacheslav N and Gurskii, Alexander L and Yablonskii, Gennadii P (2003) International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems. : .
20032003 International Symposium on Compound Semiconductors
Gurskii, AL and Lutsenko, EV and Pavlovskii, VN and Zubialevich, VZ and Ryabtsev, AG and Ryabtsev, GI and Yablonskii, GP and Dikme, Y and Szymakovski, A and Kalisch, H and others (2003) 2003 International Symposium on Compound Semiconductors. : .
2002XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Yablonskii, Gennadii P and Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Alam, Assadullah and Protzmann, Harry and Luenenbuerger, Markus and Schineller, Bernd and others (2002) XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001). : .
2002XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001)
Lutsenko, Evgenii V and Zubialevich, Vitalii Z and Pavlovskii, Vyacheslav N and Marko, Igor P and Gurskii, Alexander L and Yablonskii, Gennadii P and Kalisch, Holger and Walther, Thomas and Schoen, Oliver and Protzmann, Harry and others (2002) XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001). : .

Honours and Awards

  • [2022] - SPRINT One to Watch Award
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