Postdoctoral Researcher in the electro-optical characterisation of InGaP

PH-14 Post doctoral Researcher in the electro-optical characterisation of InGaP microLED structures. Supported by META.

Contract: Full Time/Fixed Term

The Tyndall National Institute at University College Cork invite applications for a postdoctoral position focussed on the electro-optical characterisation InGaP metal-oxide-semiconductor (MOS) structures. The research position is supported by Meta- and is related to an increased understanding of non-radiative recombination centres in InGaP based microLED structures.

Background

The ability to form displays comprised of microscale light emitting diodes (LEDs), where the LED lateral dimensions are around 2um, is central to the realisation of Augmented Reality Head-Mounted Displays. Such head-mounted displays, which augment our surroundings, will open the door to a vast range of new applications in areas such as:  surgery, manufacturing, training, entertainment and education.

The current research challenge in terms of the practical realisation of such displays, is the properties of the semiconductor/oxide interface at, or near, the periphery of the light emitting diodes. The semiconductor materials which are used for light emission are called compound semiconductors and are typically comprised of two or three elements from groups III and V of the periodic table (e.g., GaAs, InGaP, GaN, InGaN). As the lateral dimensions of the LEDs drop below around 10um, which is required for a high-resolution display, crystalline defects at the periphery of the device, or within the surrounding passivation oxide, can play an increasing role, and act as non-radiative recombination centres, reducing the internal quantum efficiency. The problem is particularly challenging in the case of the red microLED, typically formed using the compound semiconductor InGaP. The ability to characterise these non-radiative defects is the basis for the placement.

The 2-year postdoctoral research position will be focussed on the electrical characterisation of MOS structures formed on InGaP. The experimental measurements will be based primarily on impedance spectroscopy of the InGaP MOS system from 100Hz up to 1 GHz.  The work will also involve the development of MOS impedance spectroscopy during illumination over the wavelength range from the Infrared to Ultraviolet.  The experimental data will be analysed to determine the spatial and energetic distribution of non-radiative recombination centres near the InGaP/oxide interface. The experimental results and analysis will be use to guide process development aimed at increasing the internal quantum efficiency of red InGaP based microLEDs.

Responsibilities

• The development of mask sets to form structures for electrical characterisation of the InGaP MOS structures
• Interacting with Tyndall and Meta to form the relevant MOS structures.
• The candidate will need to take a leadership role in the electrical characterisation of InGaP MOS structures using impedance spectroscopy and the development of the novel electro-optic MOS characterisation
• Participate in Education and Public Engagement activities, as required.
• Ensure all activities are compliant with the Tyndall Quality Management system.
• Ensure all activities are compliant with the required Health and Safety standards.
• Carry out any additional duties as may reasonably be required within the general scope and level of the post.

Essential Criteria

• The candidate should have a PhD in Engineering or Physics. They should have a proven track record in the design fabrication and characterisation of electronic and/or electro-optic devices.
• Experience in the fabrication of semiconductor devices (e.g., lithography, sputtering, etching, oxide deposition…)

Desirable Criteria

• Experience of on-wafter electrical characterisation of semiconductor  devices in a probe station.
• Experience in the device modelling (e.g., Silvaco, Synopsis, Comsol..etc)
• Excellent verbal and written communication skills
• Experience in the growth of III-V devices is also an asset.
• Strong leadership skills

For further information on this position, please contact Prof Paul Hurley, Nanoelectronic Materials and Devices Photonics Group, Tyndall National Institute (Email: paul.hurley@tyndall.ie)

Appointment may be made on the IUA Researcher Scale € 42,031- € 48,427 per annum. Salary placement on appointment will be in accordance with public sector pay policy.

Application Instructions

Step 1 - Please click here to download the Application form and indicate the Job Reference PH-14

Step 2 - Return the completed application form, together with your CV and motivation letter to careers@tyndall.ie.

Please ensure that your motivation letter, CV and application letter are submitted in pdf format.

Please note that Garda vetting and/or an international police clearance check may form part of the selection process.

The University, at its discretion, may undertake to make an additional appointment(s) from this competition following the conclusion of the process.

At this time, Tyndall National Institute does not require the assistance of recruitment agencies.

Tyndall National Institute at University College, Cork is an Equal Opportunities Employer.