Materials Modelling for Devices

Our research group aims to understand and predict how devices work, by research based on modelling materials at the atomic scale. We supply fundamental insights into how materials perform in various technologies, ranging from electronics to solar power, and so work closely with experimental groups in academia and industry. There is particular focus on modelling atomic layer deposition (ALD) and heterogeneous catalysis at surfaces.

Atomic layer deposition (ALD) of alumina, hafnia/zirconia	Thin film dielectrics for transistors, capacitors and memory	ELECTRONICS
Oxide-oxide heterojunctions on titania	Photocatalysis for renewable energy	ENERGY
Chemistries for depositing copper metal and surfaces during growth	3D nanoelectronic interconnects	ELECTRONICS
Surfaces of ceria	Heterogeneous catalysis	ENERGY
Native oxides of III-V semiconductors	Interfaces in CMOS transistors	ELECTRONICS
Multi-scale modelling of oxide growth	Thin film dielectrics for transistors, capacitors and memory	MATERIALS
ALD of silicon nitride, silicon carbide and silicon oxide	Etch-resistant layers for fabricating electronic devices	ELECTRONICS
Functional Metals Oxides: Surfaces and Interfaces	Solar cells and smart windows	ENERGY

Industry and Technology Partners:

We have bilateral projects including industry funding with:

In addition, we are involved in multi-lateral projects and have published joint papers with other companies.

University Collaboration:

We have joint papers or bilateral projects with:

TU Eindhoven, Netherlands
MDM National Laboratory, Italy
University of Liverpool, UK
University of Reading, UK
Strathclyde University, UK
University of Barcelona, Spain
Kinki University, Japan
Freidrich-Alexander University Erlangen-Nuremberg, Germany
University of Osnabruck, Germany
CSIC Madrid, Spain
Carleton University, Canada
CIC Nanogune, Spain

as well as multi-lateral projects with other research groups world-wide.

Contact enquiry (at) tyndall (dot) ie for all Business Development enquiries