Dr Farzan Gity, Senior Staff Researcher at Tyndall National Institute has been recognised by Intel as one of just ten recipients worldwide of the prestigious 2025 Intel Outstanding Researcher Awards (ORA), highlighting the impact of collaborative research in advancing next-generation semiconductor technologies.
The annual Intel Outstanding Researcher Awards celebrate exceptional academic leaders whose groundbreaking research is helping shape the future of technology. Led by Intel’s Corporate Research Council, the programme recognises outstanding achievements from Intel-sponsored university research collaborations that contribute to Intel’s mission of creating world-changing technology that enriches the lives of people around the globe.
Dr Gity received the award for his project, “Role of Grain Boundaries (GBs) in TMDs on Carrier Transport: Identifying GB Structure-Electrical Property Correlation.”
This project established detailed connections between grain boundary configuration and electrical behavior in 2D transition metal dichalcogenide devices. By integrating modeling techniques with experimental characterisation, it determined which grain boundary structures severely compromise carrier conduction in MoS₂ and WSe₂. The outcomes provide vital guidance for material engineering and device architecture, directly enabling the creation of enhanced 2D channel materials.
Commenting on the award, Dr Gity said:
I am honoured to receive this award from Intel. It reflects the value of strong collaboration between industry and academia in advancing next-generation semiconductor technologies.
