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Leader in Integrated ICT Hardware & Systems

Eoin O'Reilly -

Eoin O'Reilly

Contact

+353 (0)21 2346413
eoin.oreilly (at) tyndall (dot) ie

  • Chief Scientist Office
  • Focused mainly on the physics and applications of semiconductor devices and materials, my research interests target:
  • • Prediction and elucidation of the benefits of band structure engineering for optoelectronic material and device applications
  • • The introduction and development of widely useful techniques to analyse semiconductor electronic structure and its consequences
  • • Leading understanding of the electronic structure of crystalline and amorphous semiconductors
  • • Close collaboration with experimental physicists and device specialists, to determine the dominant gain and loss processes in optoelectronic materials and hence design and engineer a new generation of photonic devices with improved functionality.
  • Overall, I have developed and lead one of the few groups worldwide which have the aim and capability to start from first principles investigations of fundamental processes and carry through to investigations that guide and lead the development of photonic devices with enhanced capability and functionality.

Research Grants

  • BIsmide And Nitride Components for High temperature Operation. (European Union) €531,425.00 (01-JUL-10 / 31-AUG-14)
  • Nanoscale Physics and Engineering of Optoelectronic materials and devices. (Science Foundation of Ireland) €1,350,624.00 (01-NOV-10 / 31-DEC-15)
  • High-resolution fingerprint sensing with vertical piezoelectric nanawire matrices PiezoMAT. (European Union) €414,477.00 (01-NOV-13 / 31-OCT-16)
  • From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanastructures. (European Union) €813,990.00 (01-JAN-14 / 31-DEC-16)

Books

YearPublication
2002 Quantum Theory of Solids
Eoin O'Reilly (2002) [Details]
2015 An overview of dilute nitrides theory and properties
Eoin P. O'Reilly (2015) An overview of dilute nitrides theory and properties. : Pan Stanford. [Details]
2014 Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
Eoin P O’Reilly, Stefan Schulz, Oliver Marquardt and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. [Details]
2014 Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules
Stefan Schulz and Eoin P. O’Reilly (2014) Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules. : Springer. [Details]
2013 Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models
C. A. Broderick, M. Usman and E. P. O'Reilly (2013) Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models. : Springer Series in Materials Science 186. [Details]
2012 Theory of Electronic Transport in Nanostructures
E.P. O’Reilly and M. Seifikar (2012) Theory of Electronic Transport in Nanostructures. : Springer Series in Materials Science. [Details]

Peer Reviewed Journals

YearPublication
2014 Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : Journal of Physics-Condensed Matter. [Details]
2014 Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells
Usman, M,O'Reilly, EP (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells. : Applied Physics Letters. [Details]
2014 Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
Schulz S.; M. A. Caro; O'Reilly E. P (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2014 Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys
Schulz, S,Caro, MA,O'Reilly, EP (2014) Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys. : Applied Physics Letters. [Details]
2014 Luminescence properties of dilute bismide systems
Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O'Reilly, EP (2014) Luminescence properties of dilute bismide systems. : Journal of Luminescence. [Details]
2014 Self-consistent Green's function method for dilute nitride conduction band structure
Seifikar, M,O'Reilly, EP,Fahy, S (2014) Self-consistent Green's function method for dilute nitride conduction band structure. : Journal of Physics-Condensed Matter. [Details]
2014 Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects
Uskov, AV,Protsenko, IE,Ikhsanov, RS,Babicheva, VE,Zhukovsky, SV,Lavrinenko, AV,O'Reilly, EP,Xu, HX (2014) Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects. : Nanoscale. [Details]
2014 Bistability of threshold in quantum dash-in-a-well lasers
Harnedy, PE,Osborne, S,Joshi, S,Lelarge, F,O'Reilly, EP (2014) Bistability of threshold in quantum dash-in-a-well lasers. : Iet Optoelectronics. [Details]
2014 Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration
Uskov, AV,Protsenko, IE,Mortensen, NA,O'Reilly, EP (2014) Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration. : Plasmonics. [Details]
2013 Comparison of stress and total energy methods for calculation of elastic properties of semiconductors
Caro, MA,Schulz, S,O'Reilly, EP (2013) Comparison of stress and total energy methods for calculation of elastic properties of semiconductors. : Journal of Physics-Condensed Matter. [Details]
2013 Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : Semiconductor Science and Technology. [Details]
2013 Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x
Usman, M,Broderick, CA,Batool, Z,Hild, K,Hosea, TJC,Sweeney, SJ,O'Reilly, EP (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x. : Physical Review B. [Details]
2013 Refractive index dynamics of InAs/GaAs quantum dots
Crowley, MT,Houlihan, J,Piwonski, T,O'Driscoll, I,Williams, DP,O'Reilly, EP,Uskov, AV,Huyet, G (2013) Refractive index dynamics of InAs/GaAs quantum dots. : Applied Physics Letters. [Details]
2013 Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : Applied Physics Express. [Details]
2013 Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors
Broderick, CA,Usman, M,O'Reilly, EP (2013) Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors. : Semiconductor Science and Technology. [Details]
2013 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations
Broderick, CA,Usman, M,O'Reilly, EP (2013) 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2013 Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : Physical Review B. [Details]
2012 Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2012) Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides. : Physical Review B. [Details]
2012 Band engineering in dilute nitride and bismide semiconductor lasers
Broderick, CA,Usman, M,Sweeney, SJ,O'Reilly, EP (2012) Band engineering in dilute nitride and bismide semiconductor lasers. : Semiconductor Science and Technology. [Details]
2012 Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots
Schulz, S,Caro, MA,O'Reilly, EP (2012) Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots. : Applied Physics Letters. [Details]
2012 Effect of alloy fluctuations on the local polarization in nitride nanostructures
Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 Piezoelectric properties of zinc blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2012) Piezoelectric properties of zinc blende quantum dots. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 Ground state switching in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2012 The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties
Usman, M,Tasco, V,Todaro, MT,De Giorgi, M,O'Reilly, EP,Klimeck, G,Passaseo, A (2012) The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. : Nanotechnology. [Details]
2012 Noise-Assisted Crystallization of Opal Films
Khunsin, W,Amann, A,Kocher-Oberlehner, G,Romanov, SG,Pullteap, S,Seat, HC,O'Reilly, EP,Zentel, R,Torres, CMS (2012) Noise-Assisted Crystallization of Opal Films. : Advanced Functional Materials. [Details]
2012 Fine-structure splitting in large-pitch pyramidal quantum dots
Mereni, LO,Marquardt, O,Juska, G,Dimastrodonato, V,O'Reilly, EP,Pelucchi, E (2012) Fine-structure splitting in large-pitch pyramidal quantum dots. : Physical Review B. [Details]
2012 Built-in field control in nitride nanostructures operating in the UV
Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P (2012) Built-in field control in nitride nanostructures operating in the UV. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details]
2012 A flexible, plane-wave based multiband k center dot p model
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : Optical and Quantum Electronics. [Details]
2011 Built-in field reduction in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2011) Built-in field reduction in InGaN/GaN quantum dot molecules. : Applied Physics Letters. [Details]
2011 Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure
Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure. : Physical Review B. [Details]
2011 Built-in field control in alloyed c-plane III-N quantum dots and wells
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : Journal of Applied Physics. [Details]
2011 Modelling and direct measurement of the density of states in GaAsN
Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M (2011) Modelling and direct measurement of the density of states in GaAsN. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2011 Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : Physical Review B: Condensed Matter. [Details]
2011 Built-in fields in stacked InGaN/GaN quantum dots
Schulz, S,O'Reilly, EP (2011) Built-in fields in stacked InGaN/GaN quantum dots. : Physica Status Solidi A-Applications and Materials Science. [Details]
2011 Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
Usman, M,Broderick, CA,Lindsay, A,O'Reilly, EP (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. : Physical Review B. [Details]
2011 Theory of intermediate- and high-field mobility in dilute nitride alloys
Seifikar, M,O'Reilly, EP,Fahy, S (2011) Theory of intermediate- and high-field mobility in dilute nitride alloys. : Physical Review B. [Details]
2011 Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As
Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. : Physical Review B. [Details]
2011 Analysis of band-anticrossing model in GaNAs near localised states
Seifikar, M,O'Reilly, EP,Fahy, S (2011) Analysis of band-anticrossing model in GaNAs near localised states. : Physica Status Solidi B-Basic Solid State Physics. [Details]
2010 Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates
Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O'Reilly, E. P (2010) Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. : Physica E-Low-Dimensional Systems & Nanostructures. [Details]
2010 Theory of reduced built-in polarization field in nitride-based quantum dots
Schulz, S,O'Reilly, EP (2010) Theory of reduced built-in polarization field in nitride-based quantum dots. : Physical Review B: Condensed Matter. [Details]
2010 Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots
Andrzejewski, J,Sek, G,O'Reilly, E,Fiore, A,Misiewicz, J (2010) Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots. : Journal of Applied Physics. [Details]
2010 Active Region Design for High-Speed 850-nm VCSELs
Healy, SB,O'Reilly, EP,Gustavsson, JS,Westbergh, P,Haglund, A,Larsson, A,Joel, A (2010) Active Region Design for High-Speed 850-nm VCSELs. : IEEE Journal of Quantum Electronics. [Details]
2010 Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys
Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O'Reilly, EP (2010) Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys. : Physical Review B. [Details]
2010 Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : Physical Review B: Condensed Matter. [Details]
2010 Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
Ridha, P,Li, LHH,Mexis, M,Smowton, PM,Andrzejewski, J,Sek, G,Misiewicz, J,O'Reilly, EP,Patriarche, G,Fiore, A (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. : IEEE Journal of Quantum Electronics. [Details]
2009 Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots
Gradkowski, K, Pavarelli, N, Ochalski, TJ, Williams, DP, Tatebayashi, J, Huyet, G, O'Reilly, EP, Huffaker, DL (2009) Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots. : Applied Physics Letters. [Details]
2009 Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
Heck, SC,Osborne, S,Healy, SB,O'Reilly, EP,Lelarge, F,Poingt, F,Le Gouezigou, O,Accard, A (2009) Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers. : IEEE Journal of Quantum Electronics. [Details]
2009 Theory of GaN Quantum Dots for Optical Applications
Williams, DP,Schulz, S,Andreev, AD,O'Reilly, EP (2009) Theory of GaN Quantum Dots for Optical Applications. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2009 Control of reflectivity and stop bands in a Bragg stack with a four-layer period
Saghir, SK,Amann, A,O'Reilly, EP (2009) Control of reflectivity and stop bands in a Bragg stack with a four-layer period. : Optics Communications. [Details]
2009 The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers
Crowley, MT,Marko, IP,Masse, NF,Andreev, AD,Tomic, S,Sweeney, SJ,O'Reilly, EP,Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2009 Mechanism of Synchronization in Frequency Dividers
Amann, A,Mortell, MP,O'Reilly, EP,Quinlan, M,Rachinskii, D (2009) Mechanism of Synchronization in Frequency Dividers. : IEEE Transactions On Circuits and Systems I-Regular Papers. [Details]
2009 Optical transition pathways in type-II Ga(As)Sb quantum dots
Gradkowski, K,Ochalski, TJ,Williams, DP,Tatebayashi, J,Khoshakhlagh, A,Balakrishnan, G,O'Reilly, EP,Huyet, G,Dawson, LR,Huffaker, DL (2009) Optical transition pathways in type-II Ga(As)Sb quantum dots. : Journal of Luminescence. [Details]
2008 Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys
Lindsay, A,O'Reilly, EP,Andreev, AD,Ashley, T (2008) Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys. : Physical Review B. [Details]
2008 Gap Solitons In Spatiotemporal Photonic Crystals
Biancalana, F, Amann, A, O'Reilly, EP (2008) Gap Solitons In Spatiotemporal Photonic Crystals. : Physical Review A. [Details]
2008 Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser
Osborne, S,O'Brien, S,O'Reilly, EP,Huggard, PG,Ellison, BN (2008) Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser. : Electronic Letters. [Details]
2007 Dynamics of Light Propagation In Spatiotemporal Dielectric Structures
Biancalana, F, Amann, A, Uskov, AV, O'Reilly, EP (2007) Dynamics of Light Propagation In Spatiotemporal Dielectric Structures. : Physical Review E. [Details]
2007 Two-colour Fabry-Perot laser with terahertz primary mode spacing
Osborne, S,O'Brien, S,Buckley, K,Fehse, R,Patchell, J,Kelly, B,O'Gorman, J,O'Reilly, EP (2007) Two-colour Fabry-Perot laser with terahertz primary mode spacing. : Electronic Letters. [Details]
2006 Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design
O'Brien, S, Osborne, S, Buckley, K, Fehse, R, Amann, A, O'Reilly, EP, Barry, LP, Anandarajah, P, Patchell, J, O'Gorman, J (2006) Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design. : Physical Review A. [Details]
2006 Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach
O'Brien, S., Amann, A., Rondinelli, J.M., Fehse, R., Osborne, S. O'Reilly, E.P (2006) Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach. : Journal of the Optical Society of America B. [Details]
2006 Alloy scattering of n-type carriers in GaNxAs1-x
Fahy, S,Lindsay, A,Ouerdane, H,O'Reilly, EP (2006) Alloy scattering of n-type carriers in GaNxAs1-x. : Physical Review B. [Details]
2005 Breakup of the conduction band structure of dilute GaAs1-yNy alloys
Patane, A,Endicott, J,Ibanez, J,Brunkov, PN,Eaves, L,Healy, SB,Lindsay, A,O'Reilly, EP,Hopkinson, M (2005) Breakup of the conduction band structure of dilute GaAs1-yNy alloys. : Physical Review B. [Details]
2005 On gain saturation in quantum dot semiconductor optical amplifiers
Uskov, AV,O'Reilly, EP,Laemmlin, M,Ledentsov, NN,Bimberg, D (2005) On gain saturation in quantum dot semiconductor optical amplifiers. : Optics Communications. [Details]
2005 Biexciton and exciton dynamics in single InGaN quantum dots
Rice, JH,Robinson, JW,Na, JH,Lee, KH,Taylor, RA,Williams, DP,O'Reilly, EP,Andreev, AD,Arakawa, Y,Yasin, S (2005) Biexciton and exciton dynamics in single InGaN quantum dots. : Nanotechnology. [Details]
2005 Theory of improved spectral purity in index patterned Fabry-Perot lasers
O'Brien, S,O'Reilly, EP (2005) Theory of improved spectral purity in index patterned Fabry-Perot lasers. : Applied Physics Letters. [Details]
2004 Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model
O'Reilly, EP,Lindsay, A,Fahy, S (2004) Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model. : Journal of Physics-Condensed Matter. [Details]
2004 THz photocurrent through an independently contacted three-level heterostructure
Vasko, FT,O'Reilly, EP (2004) THz photocurrent through an independently contacted three-level heterostructure. : Semiconductor Science and Technology. [Details]
2004 Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells
Tomic, S,O'Reilly, EP,Klar, PJ,Gruning, H,Heimbrodt, W,Chen, WMM,Buyanova, IA (2004) Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells. : Physical Review B. [Details]
2004 On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers
Uskov, AV,O'Reilly, EP,Manning, RJ,Webb, RP,Cotter, D,Laemmlin, M,Ledentsov, NN,Bimberg, D (2004) On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers. : IEEE Photonics Technology Letters. [Details]
2004 Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states
Uskov, AV,O'Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G (2004) Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states. : Applied Physics Letters. [Details]
2004 Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure
Andreev, AD,O'Reilly, EP (2004) Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure. : Applied Physics Letters. [Details]
2003 Resonant photon-assisted tunneling between independently contacted quantum wells
Vasko, FT,O'Reilly, EP (2003) Resonant photon-assisted tunneling between independently contacted quantum wells. : Physical Review B. [Details]
2003 Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers
Tomic, S,O'Reilly, EP,Fehse, R,Sweeney, SJ,Adams, AR,Andreev, AD,Choulis, SA,Hosea, TJC,Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2003 Intrinsic limits on electron mobility in dilute nitride semiconductors
Fahy, S,O'Reilly, EP (2003) Intrinsic limits on electron mobility in dilute nitride semiconductors. : Applied Physics Letters. [Details]
2003 Negative intersubband absorption in biased tunnel-coupled wells
Vasko, FT,Korovin, AV,O'Reilly, EP (2003) Negative intersubband absorption in biased tunnel-coupled wells. : Physical Review B. [Details]
2003 Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation
McPeake, D,Vasko, FT,O'Reilly, EP (2003) Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation. : Physical Review B. [Details]
2003 On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers
Uskov, AV,Mork, J,Tromborg, B,Berg, TW,Magnusdottir, I,O'Reilly, EP (2003) On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers. : Optics Communications. [Details]
2003 Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers
Tomic, S,O'Reilly, EP (2003) Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers. : IEEE Photonics Technology Letters. [Details]
2003 Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies
Choulis, SA,Tomic, S,O'Reilly, EP,Hosea, TJC (2003) Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies. : Solid State Communications. [Details]
2002 A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers
Fehse, R,Tomic, S,Adams, AR,Sweeney, SJ,O'Reilly, EP,Andreev, A,Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details]
2002 Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys
O'Reilly, EP,Lindsay, A,Tomic, S,Kamal-Saadi, M (2002) Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys. : Semiconductor Science and Technology. [Details]
2002 Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As)
Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O'Reilly, EP,Hofmann, M,Hader, J,Moloney, JV (2002) Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As). : Semiconductor Science and Technology. [Details]
1997 A simple method for calculating strain distributions in quantum dot structures
Downes, JR and Faux, DA and O’Reilly, EP (1997) A simple method for calculating strain distributions in quantum dot structures. : Journal of Applied Physics. [Details]
1994 Band-structure engineering in strained semiconductor lasers
O'Reilly, Eoin P and Adams, Alfred R (1994) Band-structure engineering in strained semiconductor lasers. : Quantum Electronics, IEEE Journal of. [Details]
1994 Evaluation of various approximations used in the envelope-function method
Meney, AT and Gonul, Besire and O’Reilly, EP (1994) Evaluation of various approximations used in the envelope-function method. : Physical Review B. [Details]
1989 Valence band engineering in strained-layer structures
O'Reilly, EP (1989) Valence band engineering in strained-layer structures. : Semiconductor Science and Technology. [Details]
1987 Electronic and atomic structure of amorphous carbon
Robertson, J and O’Reilly, EP (1987) Electronic and atomic structure of amorphous carbon. : Physical Review B. [Details]
1983 Theory of defects in vitreous silicon dioxide
O'Reilly, Eoin P and Robertson, John (1983) Theory of defects in vitreous silicon dioxide. : Physical Review B. [Details]

Other Journals

YearPublication

Conference Publications

YearPublication

Honours and Awards

  • Rank Prize Fund: Rank Prize for Optoelectronics (2014)
  • Royal Irish Academy: Member Royal Irish Academy (2010)
  • IET: Fellow of Institution of Engineering Technology (2005)
  • IoP: Fellow of Institute of Physics (1997)
  • Humboldt Foundation: Humboldt Fellowship, Fraunhofer Inst. Solid State Physics, Freiburg (1994)
  • Trinity College Dublin: Fitzgerald Medal and Gold Medal for Physics (1978)

Patents

  • ?

Committees

  • Member, RIA Physical, Chemical & Mathematical Sciences Committee (2014 /)
  • Chair, Board of European Physics Society Condensed Matter Division (2004 / 2014)
  • Member, Steering Committee of the National Centre for III-V Technologies, University of Sheffield, UK (2006 / 2010)
  • Member, IEEE LEOS Semiconductor Laser Technical Committee (2002 / 2004)
  • Member, IoP Condensed Matter and Materials Physics Division Committee (2000 / 2006)
  • Member, IoP Semiconductor Physics and Quantum Electronics (1998) committees (1995 / 1998)
  • Co-chair, Photonics Ireland 2015, Cork (2015 /)
  • Workshop Chair, 5th International Workshop on Bismuth-containing Semiconductors, Cork (/ 2014)
  • Symposium Main Organiser, Symposium on “Multi-scale Multi-Physics Modelling for Nanomaterials and Systems by Design”, Materials Science and Engineering, Darmstadt (/ 2014)
  • Co-chair, 24th General Conference of EPS Condensed Matter Division, Edinburgh (/ 2012)
  • Workshop Main Organiser, ACAM Workshop, Dublin on “Empirical Methods in Semiconductor Nanostructure Design and Modelling” (/ 2010)
  • Co-organizer, CECAM Workshop, Manchester on “Empirical Methods in Semiconductor Nanostructure Design and Modelling” (/ 2010)
  • Programme Chair, Photonics Ireland 2009, Cork (/ 2009)
  • Co-chair, 22nd General Conference of EPS CMD, Rome (/ 2008)
  • Programme Committee, Photonics Ireland 2007 (/ 2007)
  • Co-chair, 21st General Conference of EPS CMD, Dresden (/ 2006)
  • Organizing Committee, SFI-sponsored conference: "Emerging Technologies in Optical Sciences", University College Cork (/ 2004)
  • Symposium Chair, EMRS Spring meeting symposium on "Physics and applications of dilute nitride alloys", Strasbourg (/ 2004)
  • Forum Organiser, NMRC ICT Technology Forum on "Photonics: Enabling Future Technologies", Cork (/ 2004)
  • Programme Chair, 10th Int. Conf. On High Pressure Semiconductor Physics, Guildford (/ 2002)
  • Conference Chair, 19th General Conference of the EPS Condensed Matter Division and CMMP2002, Brighton (/ 2002)
  • College member, EPSRC (2006 /)
  • College member, EPSRC (1999 / 2002)
  • External Assessor, Forbairt Basic research grants, Ireland (1997 / 1998)
  • Physics undergraduate External Examiner, Trinity College Dublin (2006 / 2009)
  • Physics undergraduate External Examiner, University of Portsmouth (1998 / 2002)

Employment

  • Head, Department of Physics, University of Surrey (01-AUG-97 / 31-AUG-01)
  • Professor Senior Lecturer Lecturer, Dept. of Physics University of Surrey (01-SEP-84 / 31-JUL-97)
  • Assistant Lecturer, National Institute for Higher Education, Dublin (now DCU) (01-SEP-82 / 31-AUG-84)
  • Research Associate, University of Illinois, Urbana-Champaign (01-OCT-81 / 31-AUG-82)

Education

  • Trinity College Dublin , BA, Theoretical Physics (1978)
  • University of Cambridge , PHD, Physics (1981)

Journal Activities

  • Guest Editor, Semiconductor Science And Technology (01-JUN-14 - 31-MAY-15)
  • Member of Editorial Board, Semiconductor Science And Technology (01-JAN-11 -)
  • Guest Editor, Ieee J Sel Top Quant (01-JAN-11 - 30-NOV-11)
  • Guest Editor, Iee Proceedings Optoelectronics (01-MAY-04 - 30-NOV-04)

Teaching Interests

Recent Postgraduates

  • Miguel Caro (NUI (UCC) PHD) "Theory of elasticity and electric polarization effects in the group-III nitrides" (2013)
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