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Leader in Integrated ICT Hardware & Systems
Eoin O’Reilly was born in Dublin, Ireland, received the BA (MOD) degree in Theoretical Physics from Trinity College, Dublin, and obtained a PhD in Theoretical Condensed Matter Physics at the University of Cambridge. He was appointed as a lecturer at the University of Surrey in 1984, where he was head of the Department of Physics from 1997 to 2001. He joined Tyndall National Institute in 2001, following the award of one of the first Principal Investigator grants by Science Foundation Ireland (SFI). O’Reilly was appointed Chief Scientist at Tyndall in 2014, and has held a joint appointment with the Department of Physics in University College Cork since 2007. His research seeks to improve the fundamental understanding of photonic materials and devices, to enable the design of structures for new capabilities and applications. His list of over 300 publications includes 10 book chapters, 9 invited reviews, an undergraduate text book and general science articles. He is currently Principal Investigator on a Science Foundation Ireland project on “Nanoscale Physics and Engineering of Optoelectronic Materials and Devices”. He coordinated two EU FP7 STREP projects: BIANCHO, on dilute bismide semiconductor lasers (2010-2014), and DEEPEN on multiscale simulation of electronic and photonic devices (2014-2016). He is a regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year). He is a Fellow of the Institute of Physics (FInstP) and of the Institution of Engineering and Technology (FIET). O'Reilly was Chairman of the Board of the European Physical Society (EPS) Condensed Matter Division from 2006 to 2014. He is an Associate Editor of Semiconductor Science and Technology. He was a co-recipient in 2014 of the Rank Prize for Optoelectronics for his pioneering work on strained-layer semiconductor lasers.
Focused mainly on the physics and applications of semiconductor devices and materials, my research interests target:
• Prediction and elucidation of the benefits of band structure engineering for optoelectronic material and device applications
• The introduction and development of widely useful techniques to analyse semiconductor electronic structure and its consequences
• Leading understanding of the electronic structure of crystalline and amorphous semiconductors
• Close collaboration with experimental physicists and device specialists, to determine the dominant gain and loss processes in optoelectronic materials and hence design and engineer a new generation of photonic devices with improved functionality.
Overall, I have developed and lead one of the few groups worldwide which have the aim and capability to start from first principles investigations of fundamental processes and carry through to investigations that guide and lead the development of photonic devices with enhanced capability and functionality.
| Funder | Start Date | End Date | Title | Role |
|---|---|---|---|---|
| European Union | 01-JUL-10 | 31-AUG-14 | BIsmide And Nitride Components for High temperature Operation. | Principal Investigator |
| Science Foundation of Ireland | 01-NOV-10 | 31-DEC-15 | Nanoscale Physics and Engineering of Optoelectronic materials and devices. | Principal Investigator |
| European Union | 01-NOV-13 | 30-JUN-17 | High-resolution fingerprint sensing with vertical piezoelectric nanawire matrices PiezoMAT. | Principal Investigator |
| European Union | 01-JAN-14 | 30-JUN-18 | From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanastructures. | Principal Investigator |
| Year | Publication |
|---|---|
| 2002 | Quantum Theory of Solids Eoin O'Reilly; (2002) Quantum Theory of Solids. : Taylor and Francis. |
| Year | Publication |
|---|---|
| 2015 | An overview of dilute nitrides theory and properties Eoin P. O'Reilly (2015) An overview of dilute nitrides theory and properties. : Pan Stanford. |
| 2014 | Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures Eoin P O’Reilly, Stefan Schulz, Oliver Marquardt and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. [Details] |
| 2014 | Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules Stefan Schulz and Eoin P. O’Reilly (2014) Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules. : Springer. [Details] |
| 2013 | Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models C. A. Broderick, M. Usman and E. P. O'Reilly (2013) Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models. : Springer Series in Materials Science 186. |
| 2012 | Theory of Electronic Transport in Nanostructures E.P. O’Reilly and M. Seifikar (2012) Theory of Electronic Transport in Nanostructures. : Springer Series in Materials Science. [Details] |
| Year | Journal | Publication |
|---|---|---|
| 2014 | Journal of Luminescence | Luminescence properties of dilute bismide systems Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O'Reilly, EP (2014) Luminescence properties of dilute bismide systems. : . [Details] |
| 2014 | Journal of Physics-Condensed Matter | Self-consistent Green's function method for dilute nitride conduction band structure Seifikar, M,O'Reilly, EP,Fahy, S (2014) Self-consistent Green's function method for dilute nitride conduction band structure. : . [Details] |
| 2014 | Plasmonics | Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration Uskov, AV,Protsenko, IE,Mortensen, NA,O'Reilly, EP (2014) Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration. : . [Details] |
| 2014 | Journal of Physics-Condensed Matter | Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : . [Details] |
| 2014 | Applied Physics Letters | Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells Usman, M,O'Reilly, EP (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells. : . [Details] |
| 2014 | Physica Status Solidi (C) Current Topics in Solid State Physics | Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap Schulz S.; M. A. Caro; O'Reilly E. P. (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : . [Details] |
| 2013 | Physical Review B | Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : . [Details] |
| 2013 | Physica Status Solidi B-Basic Solid State Physics | 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations Broderick, CA,Usman, M,O'Reilly, EP (2013) 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations. : . [Details] |
| 2013 | Applied Physics Letters | Refractive index dynamics of InAs/GaAs quantum dots Crowley, MT,Houlihan, J,Piwonski, T,O'Driscoll, I,Williams, DP,O'Reilly, EP,Uskov, AV,Huyet, G (2013) Refractive index dynamics of InAs/GaAs quantum dots. : . [Details] |
| 2013 | Semiconductor Science and Technology | Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : . [Details] |
| 2013 | Applied Physics Express | Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . [Details] |
| 2012 | Semiconductor Science and Technology | Band engineering in dilute nitride and bismide semiconductor lasers Broderick, CA,Usman, M,Sweeney, SJ,O'Reilly, EP (2012) Band engineering in dilute nitride and bismide semiconductor lasers. : . [Details] |
| 2012 | Physica Status Solidi B-Basic Solid State Physics | Effect of alloy fluctuations on the local polarization in nitride nanostructures Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : . [Details] |
| 2012 | Physica Status Solidi B-Basic Solid State Physics | Ground state switching in InGaN/GaN quantum dot molecules Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : . [Details] |
| 2012 | Nanotechnology | The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties Usman, M,Tasco, V,Todaro, MT,De Giorgi, M,O'Reilly, EP,Klimeck, G,Passaseo, A (2012) The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. : . [Details] |
| 2012 | Advanced Functional Materials | Noise-Assisted Crystallization of Opal Films Khunsin, W,Amann, A,Kocher-Oberlehner, G,Romanov, SG,Pullteap, S,Seat, HC,O'Reilly, EP,Zentel, R,Torres, CMS (2012) Noise-Assisted Crystallization of Opal Films. : . [Details] |
| 2012 | Physica Status Solidi (C) Current Topics in Solid State Physics | Built-in field control in nitride nanostructures operating in the UV Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P. (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details] |
| 2012 | Optical and Quantum Electronics | A flexible, plane-wave based multiband k center dot p model Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : . [Details] |
| 2011 | Journal of Applied Physics | Built-in field control in alloyed c-plane III-N quantum dots and wells Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP; (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : . [Details] |
| 2011 | Physica Status Solidi B-Basic Solid State Physics | Modelling and direct measurement of the density of states in GaAsN Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M; (2011) Modelling and direct measurement of the density of states in GaAsN. : . [Details] |
| 2011 | Physica Status Solidi B-Basic Solid State Physics | Analysis of band-anticrossing model in GaNAs near localised states Seifikar, M,O'Reilly, EP,Fahy, S; (2011) Analysis of band-anticrossing model in GaNAs near localised states. : . [Details] |
| 2011 | Physica Status Solidi A-Applications and Materials Science | Built-in fields in stacked InGaN/GaN quantum dots Schulz, S,O'Reilly, EP; (2011) Built-in fields in stacked InGaN/GaN quantum dots. : . [Details] |
| 2011 | Physical Review B: Condensed Matter | Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O; (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : . [Details] |
| 2011 | Physical Review B | Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Usman, M,Broderick, CA,Lindsay, A,O'Reilly, EP (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. : . [Details] |
| 2011 | Physical Review B | Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. : . [Details] |
| 2010 | IEEE Journal of Quantum Electronics | Active Region Design for High-Speed 850-nm VCSELs Healy, SB,O'Reilly, EP,Gustavsson, JS,Westbergh, P,Haglund, A,Larsson, A,Joel, A; (2010) Active Region Design for High-Speed 850-nm VCSELs. : . [Details] |
| 2010 | Physical Review B | Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O'Reilly, EP; (2010) Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys. : . [Details] |
| 2010 | IEEE Journal of Quantum Electronics | Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast Ridha, P,Li, LHH,Mexis, M,Smowton, PM,Andrzejewski, J,Sek, G,Misiewicz, J,O'Reilly, EP,Patriarche, G,Fiore, A; (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. : . [Details] |
| 2010 | Physical Review B: Condensed Matter | Electronic and optical properties of nonpolar a-plane GaN quantum wells Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP; (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : . [Details] |
| 2010 | Journal of Applied Physics | Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots Andrzejewski, J,Sek, G,O'Reilly, E,Fiore, A,Misiewicz, J; (2010) Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots. : . [Details] |
| 2010 | Physica E-Low-Dimensional Systems & Nanostructures | Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O'Reilly, E. P. (2010) Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. : . |
| 2009 | Optics Communications | Control of reflectivity and stop bands in a Bragg stack with a four-layer period Saghir, SK,Amann, A,O'Reilly, EP; (2009) Control of reflectivity and stop bands in a Bragg stack with a four-layer period. : . [Details] |
| 2009 | IEEE Transactions On Circuits and Systems I-Regular Papers | Mechanism of Synchronization in Frequency Dividers Amann, A,Mortell, MP,O'Reilly, EP,Quinlan, M,Rachinskii, D; (2009) Mechanism of Synchronization in Frequency Dividers. : . [Details] |
| 2009 | IEEE Journal of Selected Topics In Quantum Electronics | The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers Crowley, MT,Marko, IP,Masse, NF,Andreev, AD,Tomic, S,Sweeney, SJ,O'Reilly, EP,Adams, AR; (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers. : . [Details] |
| 2009 | Applied Physics Letters | Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots Gradkowski, K, Pavarelli, N, Ochalski, TJ, Williams, DP, Tatebayashi, J, Huyet, G, O'Reilly, EP, Huffaker, DL; (2009) Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots. : . [Details] |
| 2009 | IEEE Journal of Quantum Electronics | Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers Heck, SC,Osborne, S,Healy, SB,O'Reilly, EP,Lelarge, F,Poingt, F,Le Gouezigou, O,Accard, A; (2009) Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers. : . [Details] |
| 2008 | Electronic Letters | Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser Osborne, S,O'Brien, S,O'Reilly, EP,Huggard, PG,Ellison, BN; (2008) Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser. : . [Details] |
| 2008 | Physical Review A | Gap Solitons In Spatiotemporal Photonic Crystals Biancalana, F, Amann, A, O'Reilly, EP; (2008) Gap Solitons In Spatiotemporal Photonic Crystals. : . [Details] |
| 2007 | Physical Review E | Dynamics of Light Propagation In Spatiotemporal Dielectric Structures Biancalana, F, Amann, A, Uskov, AV, O'Reilly, EP; (2007) Dynamics of Light Propagation In Spatiotemporal Dielectric Structures. : . [Details] |
| 2007 | Electronic Letters | Two-colour Fabry-Perot laser with terahertz primary mode spacing Osborne, S,O'Brien, S,Buckley, K,Fehse, R,Patchell, J,Kelly, B,O'Gorman, J,O'Reilly, EP; (2007) Two-colour Fabry-Perot laser with terahertz primary mode spacing. : . [Details] |
| 2006 | Journal of The Optical Society of America B | Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach O'Brien, S., Amann, A., Rondinelli, J.M., Fehse, R., Osborne, S. O'Reilly, E.P.; (2006) Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach. : . [Details] |
| 2006 | Physical Review A | Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design O'Brien, S, Osborne, S, Buckley, K, Fehse, R, Amann, A, O'Reilly, EP, Barry, LP, Anandarajah, P, Patchell, J, O'Gorman, J; (2006) Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design. : . [Details] |
| 2006 | Physical Review B | Alloy scattering of n-type carriers in GaNxAs1-x Fahy, S,Lindsay, A,Ouerdane, H,O'Reilly, EP; (2006) Alloy scattering of n-type carriers in GaNxAs1-x. : . [Details] |
| 2005 | Nanotechnology | Biexciton and exciton dynamics in single InGaN quantum dots Rice, JH,Robinson, JW,Na, JH,Lee, KH,Taylor, RA,Williams, DP,O'Reilly, EP,Andreev, AD,Arakawa, Y,Yasin, S; (2005) Biexciton and exciton dynamics in single InGaN quantum dots. : . [Details] |
| 2005 | Applied Physics Letters | Theory of improved spectral purity in index patterned Fabry-Perot lasers O'Brien, S,O'Reilly, EP; (2005) Theory of improved spectral purity in index patterned Fabry-Perot lasers. : . [Details] |
| 2004 | IEEE Photonics Technology Letters | On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers Uskov, AV,O'Reilly, EP,Manning, RJ,Webb, RP,Cotter, D,Laemmlin, M,Ledentsov, NN,Bimberg, D; (2004) On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers. : . [Details] |
| 2004 | Physical Review B | Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells Tomic, S,O'Reilly, EP,Klar, PJ,Gruning, H,Heimbrodt, W,Chen, WMM,Buyanova, IA; (2004) Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells. : . [Details] |
| 2004 | Applied Physics Letters | Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure Andreev, AD,O'Reilly, EP (2004) Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure. : . [Details] |
| 2004 | Applied Physics Letters | Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states Uskov, AV,O'Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G; (2004) Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states. : . [Details] |
| 2003 | Applied Physics Letters | Intrinsic limits on electron mobility in dilute nitride semiconductors Fahy, S,O'Reilly, EP; (2003) Intrinsic limits on electron mobility in dilute nitride semiconductors. : . [Details] |
| 2003 | IEEE Photonics Technology Letters | Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers Tomic, S,O'Reilly, EP; (2003) Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers. : . [Details] |
| 2003 | Optics Communications | On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers Uskov, AV,Mork, J,Tromborg, B,Berg, TW,Magnusdottir, I,O'Reilly, EP; (2003) On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers. : . [Details] |
| 2003 | IEEE Journal of Selected Topics In Quantum Electronics | Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers Tomic, S,O'Reilly, EP,Fehse, R,Sweeney, SJ,Adams, AR,Andreev, AD,Choulis, SA,Hosea, TJC,Riechert, H; (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers. : . [Details] |
| 2003 | Physical Review B | Resonant photon-assisted tunneling between independently contacted quantum wells Vasko, FT,O'Reilly, EP; (2003) Resonant photon-assisted tunneling between independently contacted quantum wells. : . [Details] |
| 2002 | Semiconductor Science and Technology | Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As) Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O'Reilly, EP,Hofmann, M,Hader, J,Moloney, JV; (2002) Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As). : . [Details] |
| 1997 | Journal of Applied Physics | A simple method for calculating strain distributions in quantum dot structures Downes, JR and Faux, DA and O’Reilly, EP (1997) A simple method for calculating strain distributions in quantum dot structures. : . |
| 1994 | Quantum Electronics, IEEE Journal of | Band-structure engineering in strained semiconductor lasers O'Reilly, Eoin P and Adams, Alfred R (1994) Band-structure engineering in strained semiconductor lasers. : . |
| 1994 | Physical Review B | Evaluation of various approximations used in the envelope-function method Meney, AT and Gonul, Besire and O’Reilly, EP (1994) Evaluation of various approximations used in the envelope-function method. : . |
| 1989 | Semiconductor Science and Technology | Valence band engineering in strained-layer structures O'Reilly, EP (1989) Valence band engineering in strained-layer structures. : . |
| 1987 | Physical Review B | Electronic and atomic structure of amorphous carbon Robertson, J and O’Reilly, EP (1987) Electronic and atomic structure of amorphous carbon. : . |
| 1983 | Physical Review B | Theory of defects in vitreous silicon dioxide O'Reilly, Eoin P and Robertson, John (1983) Theory of defects in vitreous silicon dioxide. : . |
| Year | Publication |
|---|---|
| 2009 | Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers Crowley, MT, Andreev, AD, Piwonski, T, Houlihan, J, O'Reilly, EP, Huyet, G; (2009) Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers. : . [Details] |
| 2008 | Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn Polimeni, A, Pettinari, G, Trotta, R, Masia, F, Felici, M, Capizzi, M, Lindsay, A, O'Reilly, EP, Niebling, T, Stolz, W, Klar, PJ, Martelli, F, Rubini, S; (2008) Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn. : . [Details] |
| 2008 | Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys Harris, C, Lindsay, A, O'Reilly, EP; (2008) Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys. : . [Details] |
| 2007 | Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As) Teubert, J, Klar, PJ, Heimbrodt, W, Gottschalch, V, Lindsay, A, O'Reilly, EP; (2007) Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As). : . [Details] |
Regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year), including IET, IEEE, APS, AIP, IoP, EPSRC, ERC, NSF, ESF, DFG, Academy of Finland, FWO and FCT.
| Student | Degree | Graduation Year | Institution | Thesis |
|---|---|---|---|---|
| Miguel Caro | PHD | NUI (UCC) | Theory of elasticity and electric polarization effects in the group-III nitrides |