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Leader in Integrated ICT Hardware & Systems

Eoin O'Reilly -

researcher

Contact

+353 (0)21 2346413
eoin.oreilly (at) tyndall (dot) ie

  • Chief Scientist Office

Eoin O’Reilly was born in Dublin, Ireland, received the BA (MOD) degree in Theoretical Physics from Trinity College, Dublin, and obtained a PhD in Theoretical Condensed Matter Physics at the University of Cambridge. He was appointed as a lecturer at the University of Surrey in 1984, where he was head of the Department of Physics from 1997 to 2001. He joined Tyndall National Institute in 2001, following the award of one of the first Principal Investigator grants by Science Foundation Ireland (SFI). O’Reilly was appointed Chief Scientist at Tyndall in 2014, and has held a joint appointment with the Department of Physics in University College Cork since 2007. His research seeks to improve the fundamental understanding of photonic materials and devices, to enable the design of structures for new capabilities and applications. His list of over 300 publications includes 10 book chapters, 9 invited reviews, an undergraduate text book and general science articles. He is currently Principal Investigator on a Science Foundation Ireland project on “Nanoscale Physics and Engineering of Optoelectronic Materials and Devices”. He coordinated two EU FP7 STREP projects: BIANCHO, on dilute bismide semiconductor lasers (2010-2014), and DEEPEN on multiscale simulation of electronic and photonic devices (2014-2016).  He is a regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year). He is a Fellow of the Institute of Physics (FInstP) and of the Institution of Engineering and Technology (FIET). O'Reilly was Chairman of the Board of the European Physical Society (EPS) Condensed Matter Division from 2006 to 2014. He is an Associate Editor of Semiconductor Science and Technology. He was a co-recipient in 2014 of the Rank Prize for Optoelectronics for his pioneering work on strained-layer semiconductor lasers.

Focused mainly on the physics and applications of semiconductor devices and materials, my research interests target:
• Prediction and elucidation of the benefits of band structure engineering for optoelectronic material and device applications
• The introduction and development of widely useful techniques to analyse semiconductor electronic structure and its consequences
• Leading understanding of the electronic structure of crystalline and amorphous semiconductors
• Close collaboration with experimental physicists and device specialists, to determine the dominant gain and loss processes in optoelectronic materials and hence design and engineer a new generation of photonic devices with improved functionality.
Overall, I have developed and lead one of the few groups worldwide which have the aim and capability to start from first principles investigations of fundamental processes and carry through to investigations that guide and lead the development of photonic devices with enhanced capability and functionality.


Research Grants

Funder Start Date End Date Title Role
European Union 01-JUL-10 31-AUG-14 BIsmide And Nitride Components for High temperature Operation. Principal Investigator
Science Foundation of Ireland 01-NOV-10 31-DEC-15 Nanoscale Physics and Engineering of Optoelectronic materials and devices. Principal Investigator
European Union 01-NOV-13 30-JUN-17 High-resolution fingerprint sensing with vertical piezoelectric nanawire matrices PiezoMAT. Principal Investigator
European Union 01-JAN-14 30-JUN-18 From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanastructures. Principal Investigator

Books

YearPublication
2002Quantum Theory of Solids
Eoin O'Reilly; (2002) Quantum Theory of Solids. : Taylor and Francis.

Book Chapters

YearPublication
2015An overview of dilute nitrides theory and properties
Eoin P. O'Reilly (2015) An overview of dilute nitrides theory and properties. : Pan Stanford.
2014Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
Eoin P O’Reilly, Stefan Schulz, Oliver Marquardt and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. [Details]
2014Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules
Stefan Schulz and Eoin P. O’Reilly (2014) Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules. : Springer. [Details]
2013Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models
C. A. Broderick, M. Usman and E. P. O'Reilly (2013) Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models. : Springer Series in Materials Science 186.
2012Theory of Electronic Transport in Nanostructures
E.P. O’Reilly and M. Seifikar (2012) Theory of Electronic Transport in Nanostructures. : Springer Series in Materials Science. [Details]

Peer Reviewed Journals

YearJournalPublication
2014Journal of LuminescenceLuminescence properties of dilute bismide systems
Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O'Reilly, EP (2014) Luminescence properties of dilute bismide systems. : . [Details]
2014Journal of Physics-Condensed MatterSelf-consistent Green's function method for dilute nitride conduction band structure
Seifikar, M,O'Reilly, EP,Fahy, S (2014) Self-consistent Green's function method for dilute nitride conduction band structure. : . [Details]
2014PlasmonicsBroadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration
Uskov, AV,Protsenko, IE,Mortensen, NA,O'Reilly, EP (2014) Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration. : . [Details]
2014Journal of Physics-Condensed MatterElectronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : . [Details]
2014Applied Physics LettersAtomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells
Usman, M,O'Reilly, EP (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells. : . [Details]
2014Physica Status Solidi (C) Current Topics in Solid State Physics Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
Schulz S.; M. A. Caro; O'Reilly E. P. (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : . [Details]
2013Physical Review BTheory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : . [Details]
2013Physica Status Solidi B-Basic Solid State Physics12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations
Broderick, CA,Usman, M,O'Reilly, EP (2013) 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations. : . [Details]
2013Applied Physics LettersRefractive index dynamics of InAs/GaAs quantum dots
Crowley, MT,Houlihan, J,Piwonski, T,O'Driscoll, I,Williams, DP,O'Reilly, EP,Uskov, AV,Huyet, G (2013) Refractive index dynamics of InAs/GaAs quantum dots. : . [Details]
2013Semiconductor Science and TechnologyLong wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : . [Details]
2013Applied Physics ExpressComposition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . [Details]
2012Semiconductor Science and TechnologyBand engineering in dilute nitride and bismide semiconductor lasers
Broderick, CA,Usman, M,Sweeney, SJ,O'Reilly, EP (2012) Band engineering in dilute nitride and bismide semiconductor lasers. : . [Details]
2012Physica Status Solidi B-Basic Solid State PhysicsEffect of alloy fluctuations on the local polarization in nitride nanostructures
Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : . [Details]
2012Physica Status Solidi B-Basic Solid State PhysicsGround state switching in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : . [Details]
2012NanotechnologyThe polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties
Usman, M,Tasco, V,Todaro, MT,De Giorgi, M,O'Reilly, EP,Klimeck, G,Passaseo, A (2012) The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. : . [Details]
2012Advanced Functional MaterialsNoise-Assisted Crystallization of Opal Films
Khunsin, W,Amann, A,Kocher-Oberlehner, G,Romanov, SG,Pullteap, S,Seat, HC,O'Reilly, EP,Zentel, R,Torres, CMS (2012) Noise-Assisted Crystallization of Opal Films. : . [Details]
2012Physica Status Solidi (C) Current Topics in Solid State Physics Built-in field control in nitride nanostructures operating in the UV
Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P. (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details]
2012Optical and Quantum ElectronicsA flexible, plane-wave based multiband k center dot p model
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : . [Details]
2011Journal of Applied PhysicsBuilt-in field control in alloyed c-plane III-N quantum dots and wells
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP; (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : . [Details]
2011Physica Status Solidi B-Basic Solid State PhysicsModelling and direct measurement of the density of states in GaAsN
Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M; (2011) Modelling and direct measurement of the density of states in GaAsN. : . [Details]
2011Physica Status Solidi B-Basic Solid State PhysicsAnalysis of band-anticrossing model in GaNAs near localised states
Seifikar, M,O'Reilly, EP,Fahy, S; (2011) Analysis of band-anticrossing model in GaNAs near localised states. : . [Details]
2011Physica Status Solidi A-Applications and Materials ScienceBuilt-in fields in stacked InGaN/GaN quantum dots
Schulz, S,O'Reilly, EP; (2011) Built-in fields in stacked InGaN/GaN quantum dots. : . [Details]
2011Physical Review B: Condensed MatterSymmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O; (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : . [Details]
2011Physical Review BTight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
Usman, M,Broderick, CA,Lindsay, A,O'Reilly, EP (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. : . [Details]
2011Physical Review BEffect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As
Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. : . [Details]
2010IEEE Journal of Quantum ElectronicsActive Region Design for High-Speed 850-nm VCSELs
Healy, SB,O'Reilly, EP,Gustavsson, JS,Westbergh, P,Haglund, A,Larsson, A,Joel, A; (2010) Active Region Design for High-Speed 850-nm VCSELs. : . [Details]
2010Physical Review BDirect measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys
Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O'Reilly, EP; (2010) Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys. : . [Details]
2010IEEE Journal of Quantum ElectronicsPolarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
Ridha, P,Li, LHH,Mexis, M,Smowton, PM,Andrzejewski, J,Sek, G,Misiewicz, J,O'Reilly, EP,Patriarche, G,Fiore, A; (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. : . [Details]
2010Physical Review B: Condensed MatterElectronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP; (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : . [Details]
2010Journal of Applied PhysicsEight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots
Andrzejewski, J,Sek, G,O'Reilly, E,Fiore, A,Misiewicz, J; (2010) Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots. : . [Details]
2010Physica E-Low-Dimensional Systems & NanostructuresPhysics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates
Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O'Reilly, E. P. (2010) Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. : .
2009Optics CommunicationsControl of reflectivity and stop bands in a Bragg stack with a four-layer period
Saghir, SK,Amann, A,O'Reilly, EP; (2009) Control of reflectivity and stop bands in a Bragg stack with a four-layer period. : . [Details]
2009IEEE Transactions On Circuits and Systems I-Regular PapersMechanism of Synchronization in Frequency Dividers
Amann, A,Mortell, MP,O'Reilly, EP,Quinlan, M,Rachinskii, D; (2009) Mechanism of Synchronization in Frequency Dividers. : . [Details]
2009IEEE Journal of Selected Topics In Quantum ElectronicsThe Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers
Crowley, MT,Marko, IP,Masse, NF,Andreev, AD,Tomic, S,Sweeney, SJ,O'Reilly, EP,Adams, AR; (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers. : . [Details]
2009Applied Physics LettersComplex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots
Gradkowski, K, Pavarelli, N, Ochalski, TJ, Williams, DP, Tatebayashi, J, Huyet, G, O'Reilly, EP, Huffaker, DL; (2009) Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots. : . [Details]
2009IEEE Journal of Quantum ElectronicsExperimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
Heck, SC,Osborne, S,Healy, SB,O'Reilly, EP,Lelarge, F,Poingt, F,Le Gouezigou, O,Accard, A; (2009) Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers. : . [Details]
2008Electronic LettersGeneration of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser
Osborne, S,O'Brien, S,O'Reilly, EP,Huggard, PG,Ellison, BN; (2008) Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser. : . [Details]
2008Physical Review AGap Solitons In Spatiotemporal Photonic Crystals
Biancalana, F, Amann, A, O'Reilly, EP; (2008) Gap Solitons In Spatiotemporal Photonic Crystals. : . [Details]
2007Physical Review EDynamics of Light Propagation In Spatiotemporal Dielectric Structures
Biancalana, F, Amann, A, Uskov, AV, O'Reilly, EP; (2007) Dynamics of Light Propagation In Spatiotemporal Dielectric Structures. : . [Details]
2007Electronic LettersTwo-colour Fabry-Perot laser with terahertz primary mode spacing
Osborne, S,O'Brien, S,Buckley, K,Fehse, R,Patchell, J,Kelly, B,O'Gorman, J,O'Reilly, EP; (2007) Two-colour Fabry-Perot laser with terahertz primary mode spacing. : . [Details]
2006Journal of The Optical Society of America BSpectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach
O'Brien, S., Amann, A., Rondinelli, J.M., Fehse, R., Osborne, S. O'Reilly, E.P.; (2006) Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach. : . [Details]
2006Physical Review AInverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design
O'Brien, S, Osborne, S, Buckley, K, Fehse, R, Amann, A, O'Reilly, EP, Barry, LP, Anandarajah, P, Patchell, J, O'Gorman, J; (2006) Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design. : . [Details]
2006Physical Review BAlloy scattering of n-type carriers in GaNxAs1-x
Fahy, S,Lindsay, A,Ouerdane, H,O'Reilly, EP; (2006) Alloy scattering of n-type carriers in GaNxAs1-x. : . [Details]
2005NanotechnologyBiexciton and exciton dynamics in single InGaN quantum dots
Rice, JH,Robinson, JW,Na, JH,Lee, KH,Taylor, RA,Williams, DP,O'Reilly, EP,Andreev, AD,Arakawa, Y,Yasin, S; (2005) Biexciton and exciton dynamics in single InGaN quantum dots. : . [Details]
2005Applied Physics LettersTheory of improved spectral purity in index patterned Fabry-Perot lasers
O'Brien, S,O'Reilly, EP; (2005) Theory of improved spectral purity in index patterned Fabry-Perot lasers. : . [Details]
2004IEEE Photonics Technology LettersOn ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers
Uskov, AV,O'Reilly, EP,Manning, RJ,Webb, RP,Cotter, D,Laemmlin, M,Ledentsov, NN,Bimberg, D; (2004) On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers. : . [Details]
2004Physical Review BInfluence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells
Tomic, S,O'Reilly, EP,Klar, PJ,Gruning, H,Heimbrodt, W,Chen, WMM,Buyanova, IA; (2004) Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells. : . [Details]
2004Applied Physics LettersTheoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure
Andreev, AD,O'Reilly, EP (2004) Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure. : . [Details]
2004Applied Physics LettersCarrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states
Uskov, AV,O'Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G; (2004) Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states. : . [Details]
2003Applied Physics LettersIntrinsic limits on electron mobility in dilute nitride semiconductors
Fahy, S,O'Reilly, EP; (2003) Intrinsic limits on electron mobility in dilute nitride semiconductors. : . [Details]
2003IEEE Photonics Technology LettersOptimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers
Tomic, S,O'Reilly, EP; (2003) Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers. : . [Details]
2003Optics CommunicationsOn high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers
Uskov, AV,Mork, J,Tromborg, B,Berg, TW,Magnusdottir, I,O'Reilly, EP; (2003) On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers. : . [Details]
2003IEEE Journal of Selected Topics In Quantum ElectronicsTheoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers
Tomic, S,O'Reilly, EP,Fehse, R,Sweeney, SJ,Adams, AR,Andreev, AD,Choulis, SA,Hosea, TJC,Riechert, H; (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers. : . [Details]
2003Physical Review BResonant photon-assisted tunneling between independently contacted quantum wells
Vasko, FT,O'Reilly, EP; (2003) Resonant photon-assisted tunneling between independently contacted quantum wells. : . [Details]
2002Semiconductor Science and TechnologyInterband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As)
Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O'Reilly, EP,Hofmann, M,Hader, J,Moloney, JV; (2002) Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As). : . [Details]
1997Journal of Applied PhysicsA simple method for calculating strain distributions in quantum dot structures
Downes, JR and Faux, DA and O’Reilly, EP (1997) A simple method for calculating strain distributions in quantum dot structures. : .
1994Quantum Electronics, IEEE Journal ofBand-structure engineering in strained semiconductor lasers
O'Reilly, Eoin P and Adams, Alfred R (1994) Band-structure engineering in strained semiconductor lasers. : .
1994Physical Review BEvaluation of various approximations used in the envelope-function method
Meney, AT and Gonul, Besire and O’Reilly, EP (1994) Evaluation of various approximations used in the envelope-function method. : .
1989Semiconductor Science and TechnologyValence band engineering in strained-layer structures
O'Reilly, EP (1989) Valence band engineering in strained-layer structures. : .
1987Physical Review BElectronic and atomic structure of amorphous carbon
Robertson, J and O’Reilly, EP (1987) Electronic and atomic structure of amorphous carbon. : .
1983Physical Review BTheory of defects in vitreous silicon dioxide
O'Reilly, Eoin P and Robertson, John (1983) Theory of defects in vitreous silicon dioxide. : .

More Publications

YearPublication
2009Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers
Crowley, MT, Andreev, AD, Piwonski, T, Houlihan, J, O'Reilly, EP, Huyet, G; (2009) Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers. : . [Details]
2008Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn
Polimeni, A, Pettinari, G, Trotta, R, Masia, F, Felici, M, Capizzi, M, Lindsay, A, O'Reilly, EP, Niebling, T, Stolz, W, Klar, PJ, Martelli, F, Rubini, S; (2008) Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn. : . [Details]
2008Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys
Harris, C, Lindsay, A, O'Reilly, EP; (2008) Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys. : . [Details]
2007Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As)
Teubert, J, Klar, PJ, Heimbrodt, W, Gottschalch, V, Lindsay, A, O'Reilly, EP; (2007) Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As). : . [Details]

Honours and Awards

  • [2005] - Fellow of Institution of Engineering Technology
  • [1997] - Fellow of Institute of Physics
  • [1994] - Humboldt Fellowship, Fraunhofer Inst. Solid State Physics, Freiburg
  • [1978] - Fitzgerald Medal and Gold Medal for Physics
  • [2014] - Rank Prize for Optoelectronics
  • [2010] - Member Royal Irish Academy

Patents

  • [2010] ? - Index patterned semiconductor Fabry-Perot laser

Committees

  • [2004] Board of European Physics Society Condensed Matter Division , Chair and member of the board since 2002.
  • [2002] IEEE LEOS Semiconductor Laser Technical Committee,
  • [2000] IoP Condensed Matter and Materials Physics Division Committee,
  • [1995] IoP Semiconductor Physics and Quantum Electronics (1998) committees, Member 1995-98
  • Photonics Ireland 2009, Cork, 2009
  • 22nd General Conference of EPS CMD, Rome,
  • Photonics Ireland 2007, Galway 2007-2009
  • 21st General Conference of EPS CMD, Dresden,
  • SFI-sponsored conference: "Emerging Technologies in Optical Sciences", University College Cork, Ponference Committee
  • EMRS Spring meeting symposium on "Physics and applications of dilute nitride alloys", Strasbourg,
  • NMRC ICT Technology Forum on "Photonics: Enabling Future Technologies", Cork,
  • 10th Int. Conf. On High Pressure Semiconductor Physics, Guildford,
  • 19th General Conference of the EPS Condensed Matter Division and CMMP2002, Brighton,
  • [2006] Steering Committee of the National Centre for III-V Technologies, University of Sheffield, UK ,
  • [1999] EPSRC ,
  • [1997] Forbairt Basic research grants, Ireland ,
  • [2006] Trinity College Dublin ,
  • [1998] University of Portsmouth ,
  • [2006] EPSRC ,
  • 5th International Workshop on Bismuth-containing Semiconductors, Cork,
  • Symposium on “Multi-scale Multi-Physics Modelling for Nanomaterials and Systems by Design”, Materials Science and Engineering, Darmstadt,
  • 24th General Conference of EPS Condensed Matter Division, Edinburgh,
  • ACAM Workshop, Dublin on “Empirical Methods in Semiconductor Nanostructure Design and Modelling”,
  • CECAM Workshop, Manchester on “Empirical Methods in Semiconductor Nanostructure Design and Modelling”,
  • [2014] RIA Physical, Chemical & Mathematical Sciences Committee,
  • [2015] Photonics Ireland 2015, Cork,

Outreach Activities

  • Considerable effort has been devoted to raising wider awareness of work at Tyndall. This includes development of the Tyndall Outreach programme; introduction and organisation of the Tyndall undergraduate summer bursary programme since 2003 (~10 students per year), now funded as an SFI UREKA site (2006-08); technical organisation of Tyndall ICT Technology Forum on "Photonics: Enabling Future Technologies" (2004); public lectures (including British Association, Dublin 2005) and several press articles.

Employment

  • [1997] University of Surrey - Head, Department of Physics
  • [1984] Dept. of Physics University of Surrey - Professor Senior Lecturer Lecturer
  • [1982] National Institute for Higher Education, Dublin (now DCU) - Assistant Lecturer
  • [1981] University of Illinois, Urbana-Champaign - Research Associate

Education

  • [1978] Trinity College Dublin - BA
  • [1981] University of Cambridge - PHD

Journal Activities

  • [2011] Semiconductor Science and Technology - Member of Editorial Board
  • [2011] IEEE J Sel Top Quant - Guest Editor
  • [2004] IEE Proceedings Optoelectronics - Guest Editor
  • [2014] Semiconductor Science and Technology - Guest Editor

Other Professional Activities

Regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year), including IET, IEEE, APS, AIP, IoP, EPSRC, ERC, NSF, ESF, DFG, Academy of Finland, FWO and FCT.

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Miguel Caro PHD NUI (UCC) Theory of elasticity and electric polarization effects in the group-III nitrides
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