Leader in Integrated ICT Hardware & Systems
| Year | Publication |
|---|---|
| 2002 |
Quantum Theory of Solids Eoin O'Reilly (2002) [Details] |
| 2015 | An overview of dilute nitrides theory and properties Eoin P. O'Reilly (2015) An overview of dilute nitrides theory and properties. : Pan Stanford. [Details] |
| 2014 | Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures Eoin P OReilly, Stefan Schulz, Oliver Marquardt and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing. [Details] |
| 2014 | Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules Stefan Schulz and Eoin P. OReilly (2014) Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules. : Springer. [Details] |
| 2013 | Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models C. A. Broderick, M. Usman and E. P. O'Reilly (2013) Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models. : Springer Series in Materials Science 186. [Details] |
| 2012 | Theory of Electronic Transport in Nanostructures E.P. OReilly and M. Seifikar (2012) Theory of Electronic Transport in Nanostructures. : Springer Series in Materials Science. [Details] |
| Year | Publication |
|---|---|
| 2014 | Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : Journal of Physics-Condensed Matter. [Details] |
| 2014 | Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells Usman, M,O'Reilly, EP (2014) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells. : Applied Physics Letters. [Details] |
| 2014 | Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap Schulz S.; M. A. Caro; O'Reilly E. P (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details] |
| 2014 | Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys Schulz, S,Caro, MA,O'Reilly, EP (2014) Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys. : Applied Physics Letters. [Details] |
| 2014 | Luminescence properties of dilute bismide systems Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O'Reilly, EP (2014) Luminescence properties of dilute bismide systems. : Journal of Luminescence. [Details] |
| 2014 | Self-consistent Green's function method for dilute nitride conduction band structure Seifikar, M,O'Reilly, EP,Fahy, S (2014) Self-consistent Green's function method for dilute nitride conduction band structure. : Journal of Physics-Condensed Matter. [Details] |
| 2014 | Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects Uskov, AV,Protsenko, IE,Ikhsanov, RS,Babicheva, VE,Zhukovsky, SV,Lavrinenko, AV,O'Reilly, EP,Xu, HX (2014) Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects. : Nanoscale. [Details] |
| 2014 | Bistability of threshold in quantum dash-in-a-well lasers Harnedy, PE,Osborne, S,Joshi, S,Lelarge, F,O'Reilly, EP (2014) Bistability of threshold in quantum dash-in-a-well lasers. : Iet Optoelectronics. [Details] |
| 2014 | Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration Uskov, AV,Protsenko, IE,Mortensen, NA,O'Reilly, EP (2014) Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration. : Plasmonics. [Details] |
| 2013 | Comparison of stress and total energy methods for calculation of elastic properties of semiconductors Caro, MA,Schulz, S,O'Reilly, EP (2013) Comparison of stress and total energy methods for calculation of elastic properties of semiconductors. : Journal of Physics-Condensed Matter. [Details] |
| 2013 | Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : Semiconductor Science and Technology. [Details] |
| 2013 | Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x Usman, M,Broderick, CA,Batool, Z,Hild, K,Hosea, TJC,Sweeney, SJ,O'Reilly, EP (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x. : Physical Review B. [Details] |
| 2013 | Refractive index dynamics of InAs/GaAs quantum dots Crowley, MT,Houlihan, J,Piwonski, T,O'Driscoll, I,Williams, DP,O'Reilly, EP,Uskov, AV,Huyet, G (2013) Refractive index dynamics of InAs/GaAs quantum dots. : Applied Physics Letters. [Details] |
| 2013 | Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : Applied Physics Express. [Details] |
| 2013 | Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors Broderick, CA,Usman, M,O'Reilly, EP (2013) Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors. : Semiconductor Science and Technology. [Details] |
| 2013 | 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations Broderick, CA,Usman, M,O'Reilly, EP (2013) 12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2013 | Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : Physical Review B. [Details] |
| 2012 | Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides Caro, MA,Schulz, S,O'Reilly, EP (2012) Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides. : Physical Review B. [Details] |
| 2012 | Band engineering in dilute nitride and bismide semiconductor lasers Broderick, CA,Usman, M,Sweeney, SJ,O'Reilly, EP (2012) Band engineering in dilute nitride and bismide semiconductor lasers. : Semiconductor Science and Technology. [Details] |
| 2012 | Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots Schulz, S,Caro, MA,O'Reilly, EP (2012) Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots. : Applied Physics Letters. [Details] |
| 2012 | Effect of alloy fluctuations on the local polarization in nitride nanostructures Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2012 | Piezoelectric properties of zinc blende quantum dots Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2012) Piezoelectric properties of zinc blende quantum dots. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2012 | Ground state switching in InGaN/GaN quantum dot molecules Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2012 | The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties Usman, M,Tasco, V,Todaro, MT,De Giorgi, M,O'Reilly, EP,Klimeck, G,Passaseo, A (2012) The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. : Nanotechnology. [Details] |
| 2012 | Noise-Assisted Crystallization of Opal Films Khunsin, W,Amann, A,Kocher-Oberlehner, G,Romanov, SG,Pullteap, S,Seat, HC,O'Reilly, EP,Zentel, R,Torres, CMS (2012) Noise-Assisted Crystallization of Opal Films. : Advanced Functional Materials. [Details] |
| 2012 | Fine-structure splitting in large-pitch pyramidal quantum dots Mereni, LO,Marquardt, O,Juska, G,Dimastrodonato, V,O'Reilly, EP,Pelucchi, E (2012) Fine-structure splitting in large-pitch pyramidal quantum dots. : Physical Review B. [Details] |
| 2012 | Built-in field control in nitride nanostructures operating in the UV Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P (2012) Built-in field control in nitride nanostructures operating in the UV. : Physica Status Solidi (C) Current Topics in Solid State Physics. [Details] |
| 2012 | A flexible, plane-wave based multiband k center dot p model Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : Optical and Quantum Electronics. [Details] |
| 2011 | Built-in field reduction in InGaN/GaN quantum dot molecules Schulz, S,O'Reilly, EP (2011) Built-in field reduction in InGaN/GaN quantum dot molecules. : Applied Physics Letters. [Details] |
| 2011 | Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure. : Physical Review B. [Details] |
| 2011 | Built-in field control in alloyed c-plane III-N quantum dots and wells Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : Journal of Applied Physics. [Details] |
| 2011 | Modelling and direct measurement of the density of states in GaAsN Vaughan, MP,Fahy, S,O'Reilly, EP,Ivanova, L,Eisele, H,Dahne, M (2011) Modelling and direct measurement of the density of states in GaAsN. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2011 | Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : Physical Review B: Condensed Matter. [Details] |
| 2011 | Built-in fields in stacked InGaN/GaN quantum dots Schulz, S,O'Reilly, EP (2011) Built-in fields in stacked InGaN/GaN quantum dots. : Physica Status Solidi A-Applications and Materials Science. [Details] |
| 2011 | Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Usman, M,Broderick, CA,Lindsay, A,O'Reilly, EP (2011) Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs. : Physical Review B. [Details] |
| 2011 | Theory of intermediate- and high-field mobility in dilute nitride alloys Seifikar, M,O'Reilly, EP,Fahy, S (2011) Theory of intermediate- and high-field mobility in dilute nitride alloys. : Physical Review B. [Details] |
| 2011 | Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O'Reilly, EP (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. : Physical Review B. [Details] |
| 2011 | Analysis of band-anticrossing model in GaNAs near localised states Seifikar, M,O'Reilly, EP,Fahy, S (2011) Analysis of band-anticrossing model in GaNAs near localised states. : Physica Status Solidi B-Basic Solid State Physics. [Details] |
| 2010 | Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O'Reilly, E. P (2010) Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. : Physica E-Low-Dimensional Systems & Nanostructures. [Details] |
| 2010 | Theory of reduced built-in polarization field in nitride-based quantum dots Schulz, S,O'Reilly, EP (2010) Theory of reduced built-in polarization field in nitride-based quantum dots. : Physical Review B: Condensed Matter. [Details] |
| 2010 | Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots Andrzejewski, J,Sek, G,O'Reilly, E,Fiore, A,Misiewicz, J (2010) Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots. : Journal of Applied Physics. [Details] |
| 2010 | Active Region Design for High-Speed 850-nm VCSELs Healy, SB,O'Reilly, EP,Gustavsson, JS,Westbergh, P,Haglund, A,Larsson, A,Joel, A (2010) Active Region Design for High-Speed 850-nm VCSELs. : IEEE Journal of Quantum Electronics. [Details] |
| 2010 | Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O'Reilly, EP (2010) Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys. : Physical Review B. [Details] |
| 2010 | Electronic and optical properties of nonpolar a-plane GaN quantum wells Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : Physical Review B: Condensed Matter. [Details] |
| 2010 | Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast Ridha, P,Li, LHH,Mexis, M,Smowton, PM,Andrzejewski, J,Sek, G,Misiewicz, J,O'Reilly, EP,Patriarche, G,Fiore, A (2010) Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. : IEEE Journal of Quantum Electronics. [Details] |
| 2009 | Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots Gradkowski, K, Pavarelli, N, Ochalski, TJ, Williams, DP, Tatebayashi, J, Huyet, G, O'Reilly, EP, Huffaker, DL (2009) Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots. : Applied Physics Letters. [Details] |
| 2009 | Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers Heck, SC,Osborne, S,Healy, SB,O'Reilly, EP,Lelarge, F,Poingt, F,Le Gouezigou, O,Accard, A (2009) Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers. : IEEE Journal of Quantum Electronics. [Details] |
| 2009 | Theory of GaN Quantum Dots for Optical Applications Williams, DP,Schulz, S,Andreev, AD,O'Reilly, EP (2009) Theory of GaN Quantum Dots for Optical Applications. : IEEE Journal of Selected Topics In Quantum Electronics. [Details] |
| 2009 | Control of reflectivity and stop bands in a Bragg stack with a four-layer period Saghir, SK,Amann, A,O'Reilly, EP (2009) Control of reflectivity and stop bands in a Bragg stack with a four-layer period. : Optics Communications. [Details] |
| 2009 | The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers Crowley, MT,Marko, IP,Masse, NF,Andreev, AD,Tomic, S,Sweeney, SJ,O'Reilly, EP,Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details] |
| 2009 | Mechanism of Synchronization in Frequency Dividers Amann, A,Mortell, MP,O'Reilly, EP,Quinlan, M,Rachinskii, D (2009) Mechanism of Synchronization in Frequency Dividers. : IEEE Transactions On Circuits and Systems I-Regular Papers. [Details] |
| 2009 | Optical transition pathways in type-II Ga(As)Sb quantum dots Gradkowski, K,Ochalski, TJ,Williams, DP,Tatebayashi, J,Khoshakhlagh, A,Balakrishnan, G,O'Reilly, EP,Huyet, G,Dawson, LR,Huffaker, DL (2009) Optical transition pathways in type-II Ga(As)Sb quantum dots. : Journal of Luminescence. [Details] |
| 2008 | Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys Lindsay, A,O'Reilly, EP,Andreev, AD,Ashley, T (2008) Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys. : Physical Review B. [Details] |
| 2008 | Gap Solitons In Spatiotemporal Photonic Crystals Biancalana, F, Amann, A, O'Reilly, EP (2008) Gap Solitons In Spatiotemporal Photonic Crystals. : Physical Review A. [Details] |
| 2008 | Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser Osborne, S,O'Brien, S,O'Reilly, EP,Huggard, PG,Ellison, BN (2008) Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser. : Electronic Letters. [Details] |
| 2007 | Dynamics of Light Propagation In Spatiotemporal Dielectric Structures Biancalana, F, Amann, A, Uskov, AV, O'Reilly, EP (2007) Dynamics of Light Propagation In Spatiotemporal Dielectric Structures. : Physical Review E. [Details] |
| 2007 | Two-colour Fabry-Perot laser with terahertz primary mode spacing Osborne, S,O'Brien, S,Buckley, K,Fehse, R,Patchell, J,Kelly, B,O'Gorman, J,O'Reilly, EP (2007) Two-colour Fabry-Perot laser with terahertz primary mode spacing. : Electronic Letters. [Details] |
| 2006 | Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design O'Brien, S, Osborne, S, Buckley, K, Fehse, R, Amann, A, O'Reilly, EP, Barry, LP, Anandarajah, P, Patchell, J, O'Gorman, J (2006) Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design. : Physical Review A. [Details] |
| 2006 | Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach O'Brien, S., Amann, A., Rondinelli, J.M., Fehse, R., Osborne, S. O'Reilly, E.P (2006) Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach. : Journal of the Optical Society of America B. [Details] |
| 2006 | Alloy scattering of n-type carriers in GaNxAs1-x Fahy, S,Lindsay, A,Ouerdane, H,O'Reilly, EP (2006) Alloy scattering of n-type carriers in GaNxAs1-x. : Physical Review B. [Details] |
| 2005 | Breakup of the conduction band structure of dilute GaAs1-yNy alloys Patane, A,Endicott, J,Ibanez, J,Brunkov, PN,Eaves, L,Healy, SB,Lindsay, A,O'Reilly, EP,Hopkinson, M (2005) Breakup of the conduction band structure of dilute GaAs1-yNy alloys. : Physical Review B. [Details] |
| 2005 | On gain saturation in quantum dot semiconductor optical amplifiers Uskov, AV,O'Reilly, EP,Laemmlin, M,Ledentsov, NN,Bimberg, D (2005) On gain saturation in quantum dot semiconductor optical amplifiers. : Optics Communications. [Details] |
| 2005 | Biexciton and exciton dynamics in single InGaN quantum dots Rice, JH,Robinson, JW,Na, JH,Lee, KH,Taylor, RA,Williams, DP,O'Reilly, EP,Andreev, AD,Arakawa, Y,Yasin, S (2005) Biexciton and exciton dynamics in single InGaN quantum dots. : Nanotechnology. [Details] |
| 2005 | Theory of improved spectral purity in index patterned Fabry-Perot lasers O'Brien, S,O'Reilly, EP (2005) Theory of improved spectral purity in index patterned Fabry-Perot lasers. : Applied Physics Letters. [Details] |
| 2004 | Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model O'Reilly, EP,Lindsay, A,Fahy, S (2004) Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model. : Journal of Physics-Condensed Matter. [Details] |
| 2004 | THz photocurrent through an independently contacted three-level heterostructure Vasko, FT,O'Reilly, EP (2004) THz photocurrent through an independently contacted three-level heterostructure. : Semiconductor Science and Technology. [Details] |
| 2004 | Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells Tomic, S,O'Reilly, EP,Klar, PJ,Gruning, H,Heimbrodt, W,Chen, WMM,Buyanova, IA (2004) Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells. : Physical Review B. [Details] |
| 2004 | On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers Uskov, AV,O'Reilly, EP,Manning, RJ,Webb, RP,Cotter, D,Laemmlin, M,Ledentsov, NN,Bimberg, D (2004) On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers. : IEEE Photonics Technology Letters. [Details] |
| 2004 | Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states Uskov, AV,O'Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G (2004) Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states. : Applied Physics Letters. [Details] |
| 2004 | Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure Andreev, AD,O'Reilly, EP (2004) Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure. : Applied Physics Letters. [Details] |
| 2003 | Resonant photon-assisted tunneling between independently contacted quantum wells Vasko, FT,O'Reilly, EP (2003) Resonant photon-assisted tunneling between independently contacted quantum wells. : Physical Review B. [Details] |
| 2003 | Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers Tomic, S,O'Reilly, EP,Fehse, R,Sweeney, SJ,Adams, AR,Andreev, AD,Choulis, SA,Hosea, TJC,Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details] |
| 2003 | Intrinsic limits on electron mobility in dilute nitride semiconductors Fahy, S,O'Reilly, EP (2003) Intrinsic limits on electron mobility in dilute nitride semiconductors. : Applied Physics Letters. [Details] |
| 2003 | Negative intersubband absorption in biased tunnel-coupled wells Vasko, FT,Korovin, AV,O'Reilly, EP (2003) Negative intersubband absorption in biased tunnel-coupled wells. : Physical Review B. [Details] |
| 2003 | Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation McPeake, D,Vasko, FT,O'Reilly, EP (2003) Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation. : Physical Review B. [Details] |
| 2003 | On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers Uskov, AV,Mork, J,Tromborg, B,Berg, TW,Magnusdottir, I,O'Reilly, EP (2003) On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers. : Optics Communications. [Details] |
| 2003 | Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers Tomic, S,O'Reilly, EP (2003) Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers. : IEEE Photonics Technology Letters. [Details] |
| 2003 | Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies Choulis, SA,Tomic, S,O'Reilly, EP,Hosea, TJC (2003) Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies. : Solid State Communications. [Details] |
| 2002 | A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers Fehse, R,Tomic, S,Adams, AR,Sweeney, SJ,O'Reilly, EP,Andreev, A,Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers. : IEEE Journal of Selected Topics In Quantum Electronics. [Details] |
| 2002 | Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys O'Reilly, EP,Lindsay, A,Tomic, S,Kamal-Saadi, M (2002) Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys. : Semiconductor Science and Technology. [Details] |
| 2002 | Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As) Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O'Reilly, EP,Hofmann, M,Hader, J,Moloney, JV (2002) Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As). : Semiconductor Science and Technology. [Details] |
| 1997 | A simple method for calculating strain distributions in quantum dot structures Downes, JR and Faux, DA and OReilly, EP (1997) A simple method for calculating strain distributions in quantum dot structures. : Journal of Applied Physics. [Details] |
| 1994 | Band-structure engineering in strained semiconductor lasers O'Reilly, Eoin P and Adams, Alfred R (1994) Band-structure engineering in strained semiconductor lasers. : Quantum Electronics, IEEE Journal of. [Details] |
| 1994 | Evaluation of various approximations used in the envelope-function method Meney, AT and Gonul, Besire and OReilly, EP (1994) Evaluation of various approximations used in the envelope-function method. : Physical Review B. [Details] |
| 1989 | Valence band engineering in strained-layer structures O'Reilly, EP (1989) Valence band engineering in strained-layer structures. : Semiconductor Science and Technology. [Details] |
| 1987 | Electronic and atomic structure of amorphous carbon Robertson, J and OReilly, EP (1987) Electronic and atomic structure of amorphous carbon. : Physical Review B. [Details] |
| 1983 | Theory of defects in vitreous silicon dioxide O'Reilly, Eoin P and Robertson, John (1983) Theory of defects in vitreous silicon dioxide. : Physical Review B. [Details] |
| Year | Publication |
|---|
| Year | Publication |
|---|