Highly Strained SiGe
We have used our methods developed for calculating the electron-phonon scattering in strained SiGe alloys to predict the n-type mobility of highly strained Ge. We predict very significant increases in room temperature mobility for uni- and bi-axial strains larger than 1.5%, and increases of one to two orders of magnitude for strain greater than 2%. We also consider the effect on the mobility of reducing the channel size, and find that the mobility enhancement diminishes for channel sizes below 20 nm, due to the stronger quantum confinement of the G band compared to the L band. Extremely high mobilities such as these would dramatically increase the operational speed while significantly reducing the power dissipation of CMOS devices, two critical factors for the further advancement of this technology.